AMD AM29LV033C

Am29LV033C
Data Sheet
July 2003
The following document specifies Spansion memory products that are now offered by both Advanced
Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and
Fujitsu.
Continuity of Specifications
There is no change to this datasheet as a result of offering the device as a Spansion product. Any
changes that have been made are the result of normal datasheet improvement and are noted in the
document revision summary, where supported. Future routine revisions will occur when appropriate,
and changes will be noted in a revision summary.
Continuity of Ordering Part Numbers
AMD and Fujitsu continue to support existing part numbers beginning with “Am” and “MBM”. To order
these products, please use only the Ordering Part Numbers listed in this document.
For More Information
Please contact your local AMD or Fujitsu sales office for additional information about Spansion
memory solutions.
Publication Number 22268 Revision B
Amendment +2 Issue Date November 7, 2000
Am29LV033C
32 Megabit (4 M x 8-Bit)
CMOS 3.0 Volt-only Uniform Sector Flash Memory
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
SOFTWARE FEATURES
■ Zero Power Operation
■ Supports Common Flash Memory Interface (CFI)
■ Erase Suspend/Erase Resume
— Sophisticated power management circuits reduce
power consumed during inactive periods to nearly zero
■ Package options
— 63-ball FBGA
— 40-pin TSOP
■ Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash standard
■ Single power supply operation
— Full voltage range: 2.7 to 3.6 volt read and write
operations for battery-powered applications
— Regulated voltage range: 3.0 to 3.6 volt read and
write operations and for compatibility with high
performance 3.3 volt microprocessors
■ Flexible sector architecture
— Sixty-four 64 Kbyte sectors
■ Manufactured on 0.32 µm process technology
PERFORMANCE CHARACTERISTICS
■ High performance
— Access times as fast as 70 ns
— Program time: 7 µs/byte typical utilizing Accelerate
function
■ Ultra low power consumption (typical values)
— 2 mA active read current at 1 MHz
— 10 mA active read current at 5 MHz
— 200 nA in standby or automatic sleep mode
— Suspends erase operations to allow programming
in same bank
■ Data# Polling and Toggle Bits
— Provides a software method of detecting the status
of program or erase cycles
■ Unlock Bypass Program command
— Reduces overall programming time when issuing
multiple program command sequences
HARDWARE FEATURES
■ Any combination of sectors can be erased
■ Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or erase
cycle completion
■ Hardware reset pin (RESET#)
— Hardware method of resetting the internal state
machine to the read mode
■ ACC input pin
— Acceleration (ACC) function provides accelerated
program times
■ Sector protection
— Hardware method of locking a sector, either
in-system or using programming equipment, to
prevent any program or erase operation within that
sector
— Temporary Sector Unprotect allows changing data
in protected sectors in-system
■ Minimum 1 million write cycles guaranteed
■ Command sequence optimized for mass storage
per sector
■ 20-year data retention at 125°C
— Reliable operation for the life of the system
— Specific addresses not required for unlock cycles
This Data Sheet states AMD’s current technical specifications regarding the Product described herein. This Data
Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
Publication# 22268 Rev: B Amendment/+2
Issue Date: Novembe 7, 2000
GENERAL DESCRIPTION
The Am29LV033C is a 32 Mbit, 3.0 Volt-only Flash
memory organized as 4,194,304 bytes. The device is
offered in 63-ball FBGA and 40-pin TSOP packages.
The byte-wide (x8) data appears on DQ7–DQ0. All
read, program, and erase operations are accomplished
using only a single power supply. The device can also
be programmed in standard EPROM programmers.
The standard device offers access times of 70, 90, and
120 ns, allowing high speed microprocessors to operate without wait states. To eliminate bus contention the
device has separate chip enable (CE#), write enable
(WE#) and output enable (OE#) controls.
The device requires only a single 3.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the
program and erase operations.
The device is entirely command set compatible with
the JEDEC single-power-supply Flash standard.
Commands are written to the command register using
standard microprocessor write timings. Register contents serve as input to an internal state-machine that
controls the erase and programming circuitry. Write
cycles also internally latch addresses and data
needed for the programming and erase operations.
Reading data out of the device is similar to reading
from other Flash or EPROM devices.
Device programming occurs by executing the program
command sequence. This initiates the Embedded
Program algorithm—an internal algorithm that automatically times the program pulse widths and verifies
proper cell margin. The Unlock Bypass mode facilitates faster programming times by requiring only two
write cycles to program data instead of four.
Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase
algorithm—an internal algorithm that automatically
preprograms the array (if it is not already programmed)
before executing the erase operation. During erase,
the device automatically times the erase pulse widths
and verifies proper cell margin.
2
The host system can detect whether a program or
erase operation is complete by observing the RY/BY#
pin, or by reading the DQ7 (Data# Polling) and DQ6
(toggle) status bits. After a program or erase cycle
has been completed, the device is ready to read array
data or accept another command.
The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting
the data contents of other sectors. The device is fully
erased when shipped from the factory.
Hardware data protection measures include a low
V CC detector that automatically inhibits write operations during power transitions. The hardware sector
protection feature disables both program and erase
operations in any combination of the sectors of memory. This can be achieved in-system or via programming equipment.
The Erase Suspend feature enables the user to put
erase on hold for any period of time to read data from,
or program data to, any sector that is not selected for
erasure. True background erase can thus be achieved.
The hardware RESET# pin terminates any operation
in progress and resets the internal state machine to
reading array data. The RESET# pin may be tied to
the system reset circuitry. A system reset would thus
also reset the device, enabling the system microprocessor to read the boot-up firmware from the Flash
memory.
The device offers two power-saving features. When
addresses have been stable for a specified amount of
time, the device enters the automatic sleep mode.
The system can also place the device into the
standby mode. Power consumption is greatly reduced in both these modes.
AMD’s Flash technology combines years of Flash
memory manufacturing experience to produce the
highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a
sector simultaneously via Fowler-Nordheim tunneling.
The data is programmed using hot electron injection.
Am29LV033C
TABLE OF CONTENTS
Distinctive Characteristics . . . . . . . . . . . . . . . . . . . 1
General Description . . . . . . . . . . . . . . . . . . . . . . . . 2
Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 4
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . . 5
Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 8
Standard Products .................................................. 8
Device Bus Operations . . . . . . . . . . . . . . . . . . . . . . 9
Table 1. Am29LV033C Device Bus Operations ............9
Requirements for Reading Array Data ................... 9
Writing Commands/Command Sequences ............ 9
Accelerated Program Operation ........................... 10
Program and Erase Operation Status .................. 10
Standby Mode ...................................................... 10
Automatic Sleep Mode ......................................... 10
RESET#: Hardware Reset Pin ............................. 10
Output Disable Mode ............................................ 11
Table 2. Am29LV033C Sector Address Table ............11
Autoselect Mode ................................................... 13
Table 3. Am29LV033C Autoselect Codes
(High Voltage Method) ................................................13
Sector/Sector Block Protection and Unprotection 13
Table 4. Sector Block Addresses for
Protection/Unprotection ...............................................14
Temporary Sector/Sector Block Unprotect ........... 14
Figure 1. Temporary Sector Unprotect Operation....... 14
Figure 2. In-System Sector Protect/
Unprotect Algorithms................................................... 15
Hardware Data Protection .................................... 16
Low VCC Write Inhibit ............................................ 16
Write Pulse “Glitch” Protection ............................. 16
Logical Inhibit ....................................................... 16
Power-Up Write Inhibit ......................................... 16
Common Flash Memory Interface (CFI) . . . . . . . 16
Table 5. CFI Query Identification String ......................16
Table 6. System Interface String .................................17
Table 7. Device Geometry Definition ..........................17
Table 8. Primary Vendor-Specific Extended Query ....18
Command Definitions . . . . . . . . . . . . . . . . . . . . . . 19
Reading Array Data .............................................. 19
Reset Command .................................................. 19
Autoselect Command Sequence .......................... 19
Byte Program Command Sequence ..................... 19
Unlock Bypass Command Sequence ................... 20
Accelerated Program Operations ......................... 20
Figure 3. Program Operation ...................................... 20
Chip Erase Command Sequence ......................... 20
Sector Erase Command Sequence ...................... 21
Erase Suspend/Erase Resume Commands ......... 21
Figure 4. Erase Operation........................................... 22
Table 9. Am29LV033C Command Definitions ...........23
Write Operation Status . . . . . . . . . . . . . . . . . . . . . 24
DQ7: Data# Polling ............................................... 24
Figure 5. Data# Polling Algorithm................................ 24
RY/BY#: Ready/Busy# ......................................... 25
DQ6: Toggle Bit I .................................................. 25
DQ2: Toggle Bit II ................................................. 25
Reading Toggle Bits DQ6/DQ2 ............................ 25
DQ5: Exceeded Timing Limits .............................. 26
DQ3: Sector Erase Timer ..................................... 26
Figure 6. Toggle Bit Algorithm..................................... 26
Table 10. Write Operation Status ................................27
Absolute Maximum Ratings . . . . . . . . . . . . . . . . 28
Operating Ranges . . . . . . . . . . . . . . . . . . . . . . . . 28
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 29
CMOS Compatible ............................................... 29
Zero Power Flash ................................................. 30
Figure 9. ICC1 Current vs. Time (Showing Active
and Automatic Sleep Currents) ................................... 30
Figure 10. Typical ICC1 vs. Frequency ......................... 30
Test Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Figure 11. Test Setup.................................................. 31
Table 11. Test Specifications ......................................31
Key to Switching Waveforms . . . . . . . . . . . . . . . 31
Figure 12. Input Waveforms and
Measurement Levels ................................................... 31
AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . 32
Read Operations .................................................. 32
Figure 13. Read Operations Timings .......................... 32
Hardware Reset (RESET#) .................................. 33
Figure 14. RESET# Timings........................................ 33
Erase/Program Operations ................................... 34
Figure 15. Program Operation Timings ....................... 35
Figure 16. Accelerated Program Timing Diagram ....... 35
Figure 17. Chip/Sector Erase Operation Timings........ 36
Figure 18. Data# Polling Timings (During
Embedded Algorithms)................................................ 37
Figure 19. Toggle Bit Timings (During
Embedded Algorithms)................................................ 37
Figure 20. DQ2 vs. DQ6.............................................. 37
Figure 21. Temporary Sector/Sector
Block Unprotect Timing Diagram................................. 38
Figure 22. Sector Protect/Unprotect
Timing Diagram ........................................................... 39
Figure 23. Alternate CE# Controlled Write
Operation Timings ....................................................... 41
Erase and Programming Performance . . . . . . . 42
Latchup Characteristics . . . . . . . . . . . . . . . . . . . 42
TSOP Pin Capacitance . . . . . . . . . . . . . . . . . . . . 42
Data Retention . . . . . . . . . . . . . . . . . . . . . . . . . . . 42
Physical Dimensions . . . . . . . . . . . . . . . . . . . . . . 43
TS 040—40-Pin Standard TSOP ......................... 43
TSR040—40-Pin Reverse TSOP ........................ 44
FBD063—63-Ball Fine-Pitch Ball Grid Array
(FBGA) 8 x 14 mm ............................................... 45
Revision Summary . . . . . . . . . . . . . . . . . . . . . . . . 46
Revision B (January 3, 2000) ............................... 46
Revision B+1 (February 21, 2000) ....................... 46
Revision B+2 (November 7, 2000) ....................... 46
Am29LV033C
3
PRODUCT SELECTOR GUIDE
Family Part Number
Am29LV033C
Full Voltage Range: VCC = 2.7–3.6 V
-70
-90
-120
Max Access Time (ns)
70
90
120
CE# Access (ns)
70
90
120
OE# Access (ns)
30
40
50
Speed Option
Note: See “AC Characteristics” for full specifications.
BLOCK DIAGRAM
DQ0–DQ7
RY/BY#
VCC
Sector Switches
VSS
Erase Voltage
Generator
RESET#
WE#
State
Control
ACC
Command
Register
Input/Output
Buffers
PGM Voltage
Generator
Chip Enable
Output Enable
Logic
CE#
OE#
VCC Detector
Address Latch
STB
Timer
A0–A21
4
Am29LV033C
STB
Data
Latch
Y-Decoder
Y-Gating
X-Decoder
Cell Matrix
CONNECTION DIAGRAMS
A16
A15
A14
A13
A12
A11
A9
A8
WE#
RESET#
ACC
RY/BY#
A18
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
A17
VSS
A20
A19
A10
DQ7
DQ6
DQ5
DQ4
VCC
VCC
A21
DQ3
DQ2
DQ1
DQ0
OE#
VSS
CE#
A0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40-Pin Standard TSOP
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
A17
VSS
A20
A19
A10
DQ7
DQ6
DQ5
DQ4
VCC
VCC
A21
DQ3
DQ2
DQ1
DQ0
OE#
VSS
CE#
A0
40-Pin Reverse TSOP
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
A16
A15
A14
A13
A12
A11
A9
A8
WE#
RESET#
ACC
RY/BY#
A18
A7
A6
A5
A4
A3
A2
A1
Am29LV033C
5
CONNECTION DIAGRAMS
63-Ball FBGA (Top View, Balls Down)
A8
B8
L8
M8
NC*
NC*
NC*
NC*
A7
B7
C7
D7
E7
F7
G7
H7
J7
K7
L7
M7
NC*
NC*
A14
A13
A15
A16
A17
NC
A20
VSS
NC*
NC*
C6
D6
E6
F6
G6
H6
J6
K6
A9
A8
A11
A12
A19
A10
DQ6
DQ7
C5
D5
E5
F5
G5
H5
J5
K5
WE#
RESET#
NC
NC
DQ5
NC
VCC
DQ4
C4
D4
E4
F4
G4
H4
J4
K4
RY/BY#
ACC
NC
NC
DQ2
DQ3
VCC
A21
C3
D3
E3
F3
G3
H3
J3
K3
A7
A18
A6
A5
DQ0
NC
NC
DQ1
A2
C2
D2
E2
F2
G2
H2
J2
K2
L2
M2
NC*
A3
A4
A2
A1
A0
CE#
OE#
VSS
NC*
NC*
L1
M1
NC*
NC*
A1
B1
NC*
NC*
* Balls are shorted together via the substrate but not connected to the die.
Special Handling Instructions for FBGA
Packages
Special handling is required for Flash Memor y
products in FBGA packages.
6
Flash memory devices in FBGA packages may be
damaged if exposed to ultrasonic cleaning methods.
The package and/or data integrity may be compromised
if the package body is exposed to temperatures above
150°C for prolonged periods of time.
Am29LV033C
PIN CONFIGURATION
A0–A21
=
LOGIC SYMBOL
22 addresses
22
DQ0–DQ7 =
8 data inputs/outputs
CE#
=
Chip enable
OE#
=
Output enable
WE#
=
Write enable
CE#
RESET#
=
Hardware reset pin, active low
OE#
RY/BY#
=
Ready/Busy output
WE#
ACC
=
Hardware Acceleration Pin
RESET#
VCC
=
3.0 volt-only single power supply
(see Product Selector Guide for speed
options and voltage supply tolerances)
ACC
VSS
=
Device ground
NC
=
Pin not connected internally
A0–A21
8
DQ0–DQ7
Am29LV033C
RY/BY#
7
ORDERING INFORMATION
Standard Products
AMD standard products are available in several packages and operating ranges. The order number (Valid Combination) is formed by a combination of the elements below.
Am29LV033C
-70
E
C
TEMPERATURE RANGE
I
= Industrial (–40°C to +85°C)
E
= Extended (–55°C to +125°C)
PACKAGE TYPE
E
= 40-Pin Thin Small Outline Package (TSOP)
Standard Pinout (TS 040)
F
= 40-Pin Thin Small Outline Package (TSOP)
Reverse Pinout (TSR040)
WD = 63-ball Fine-Pitch Ball Grid Array (FBGA)
0.80 mm pitch, 8 x 14 mm package (FBD063)
SPEED OPTION
See Product Selector Guide and Valid Combinations
DEVICE NUMBER/DESCRIPTION
Am29LV033C
32 Megabit (4 M x 8-Bit) CMOS Flash Memory
3.0 Volt-only Read, Program and Erase
Valid Combinations for TSOP Packages
AM29LV033C-70
EI, FI
AM29LV033C-90
EI, EE,
FI, FE
AM29LV033C-120
Valid Combinations for FBGA Packages
Order Number
AM29LV033C-70
WDI
L033C70V
AM29LV033C-90
WDI,
WDE
L033C90V
AM29LV033C-120
Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device. Consult the local AMD sales
office to confirm availability of specific valid combinations and
to check on newly released combinations.
8
Package Marking
Am29LV033C
I
I, E
L033C12V
DEVICE BUS OPERATIONS
This section describes the requirements and use of
the device bus operations, which are initiated through
the internal command register. The command register
itself does not occupy any addressable memory location. The register is composed of latches that store the
commands, along with the address and data information needed to execute the command. The contents of
Table 1.
Operation
the register serve as inputs to the internal state machine. The state machine outputs dictate the function
of the device. Table 1 lists the device bus operations,
the inputs and control levels they require, and the resulting output. The following subsections describe
each of these operations in further detail.
Am29LV033C Device Bus Operations
CE#
OE#
WE#
RESET#
Addresses
DQ0–DQ7
Read
L
L
H
H
AIN
DOUT
Write (Note 1)
L
H
L
H
AIN
DIN
VCC ±
0.3 V
X
X
VCC ±
0.3 V
X
High-Z
Output Disable
L
H
H
H
X
High-Z
Reset
X
X
X
L
X
High-Z
Sector/Sector Block Protect
(Note 2)
L
H
L
VID
Sector Addresses,
A6 = L, A1 = H, A0 = L
DIN, DOUT
Sector/Sector Block Unprotect
(Note 2)
L
H
L
VID
Sector Addresses
A6 = H, A1 = H, A0 = L
DIN, DOUT
Temporary Sector/Sector Block
Unprotect
X
X
X
VID
AIN
DIN
Standby
Legend:
L = Logic Low = VIL, H = Logic High = VIH, VID = 12.0 ± 0.5 V, X = Don’t Care, AIN = Address In, DIN = Data In, DOUT = Data Out
Notes:
1. When the ACC pin is at VHH, the device enters the accelerated program mode. See “Accelerated Program Operations” for
more information.
2.
The sector protect and sector unprotect functions may also be implemented via programming equipment. See the “Sector/Sector
Block Protection and Unprotection” section.
Requirements for Reading Array Data
To read array data from the outputs, the system must
drive the CE# and OE# pins to VIL. CE# is the power
control and selects the device. OE# is the output control and gates array data to the output pins. WE#
should remain at VIH.
tions and to Figure 13 for the timing diagram. ICC1 in
the DC Characteristics table represents the active current specification for reading array data.
Writing Commands/Command Sequences
To write a command or command sequence (which includes programming data to the device and erasing
sectors of memory), the system must drive WE# and
CE# to VIL, and OE# to VIH.
The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory
content occurs during the power transition. No command is necessary in this mode to obtain array data.
Standard microprocessor read cycles that assert valid
addresses on the device address inputs produce valid
data on the device data outputs. The device remains
enabled for read access until the command register
contents are altered.
The device features an Unlock Bypass mode to facilitate faster programming. Once the device enters the
Unlock Bypass mode, only two write cycles are required to program a byte, instead of four. The “Byte
Program Command Sequence” section has details on
programming data to the device using both standard
and Unlock Bypass command sequences.
See “Reading Array Data” for more information. Refer
to the AC Read Operations table for timing specifica-
An erase operation can erase one sector, multiple sectors, or the entire device. Table 2 indicates the address
Am29LV033C
9
space that each sector occupies. A “sector address”
consists of the address bits required to uniquely select
a sector. The “Command Definitions” section has details on erasing a sector or the entire chip, or suspending/resuming the erase operation.
After the system writes the autoselect command sequence, the device enters the autoselect mode. The
system can then read autoselect codes from the internal register (which is separate from the memory array)
on DQ7–DQ0. Standard read cycle timings apply in
this mode. Refer to the Autoselect Mode and Autoselect Command Sequence sections for more information.
ICC2 in the DC Characteristics table represents the active current specification for the write mode. The “AC
Characteristics” section contains timing specification
tables and timing diagrams for write operations.
Accelerated Program Operation
The device offers accelerated program operations
through the ACC function. This is one of two functions
provided by the ACC pin. This function is primarily intended to allow faster manufacturing throughput at the
factory.
If the system asserts VHH on this pin, the device automatically enters the aforementioned Unlock Bypass
mode, temporarily unprotects any protected sectors,
and uses the higher voltage on the pin to reduce the
time required for program operations. The system
would use a two-cycle program command sequence
as required by the Unlock Bypass mode. Removing
VHH from the ACC pin returns the device to normal operation. Note that the ACC pin must not be at VHH for
operations other than accelerated programming, or
device damage may result.
Program and Erase Operation Status
During an erase or program operation, the system
may check the status of the operation by reading the
status bits on DQ7–DQ0. Standard read cycle timings
and ICC read specifications apply. Refer to “Write Operation Status” for more information, and to “AC Characteristics” for timing diagrams.
Standby Mode
When the system is not reading or writing to the device, it can place the device in the standby mode. In
this mode, current consumption is greatly reduced,
and the outputs are placed in the high impedance
state, independent of the OE# input.
The device enters the CMOS standby mode when the
CE# and RESET# pins are both held at VCC ± 0.3 V.
(Note that this is a more restricted voltage range than
VIH.) If CE# and RESET# are held at VIH, but not within
VCC ± 0.3 V, the device will be in the standby mode, but
10
the standby current will be greater. The device requires standard access time (t CE ) for read access
when the device is in either of these standby modes,
before it is ready to read data.
The device also enters the standby mode when the
RESET# pin is driven low. Refer to the next section,
“RESET#: Hardware Reset Pin”.
If the device is deselected during erasure or programming, the device draws active current until the
operation is completed.
I CC3 in the DC Characteristics table represents the
standby current specification.
Automatic Sleep Mode
The automatic sleep mode minimizes Flash device
energy consumption. The device automatically
enables this mode when addresses remain stable for
tACC + 30 ns. The autom atic sle ep mode is
independent of the CE#, WE#, and OE# control
signals. Standard address access timings provide new
data when addresses are changed. While in sleep
mode, output data is latched and always available to
the system. I CC4 in the DC Characteristics table
r e pr es en ts the a u tom a ti c s le ep m od e c u rr en t
specification.
RESET#: Hardware Reset Pin
The RESET# pin provides a hardware method of resetting the device to reading array data. When the RESET# pin is driven low for at least a period of tRP, the
device immediately terminates any operation in
progress, tristates all output pins, and ignores all
read/write commands for the duration of the RESET#
pulse. The device also resets the internal state machine to reading array data. The operation that was interrupted should be reinitiated once the device is
ready to accept another command sequence, to ensure data integrity.
Current is reduced for the duration of the RESET#
pulse. When RESET# is held at VSS±0.3 V, the device
draws CMOS standby current (ICC4). If RESET# is held
at VIL but not within VSS±0.3 V, the standby current will
be greater.
The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the Flash
memory, enabling the system to read the boot-up firmware from the Flash memory.
If RESET# is asserted during a program or erase operation, the RY/BY# pin remains a “0” (busy) until the
internal reset operation is complete, which requires a
time of tREADY (during Embedded Algorithms). The system can thus monitor RY/BY# to determine whether
the reset operation is complete. If RESET# is asserted
when a program or erase operation is not executing
(RY/BY# pin is “1”), the reset operation is completed
Am29LV033C
within a time of tREADY (not during Embedded Algorithms). The system can read data tRH after the RESET# pin returns to VIH.
Refer to the AC Characteristics tables for RESET# parameters and to Figure 14 for the timing diagram.
Table 2.
Output Disable Mode
When the OE# input is at VIH, output from the device is
disabled. The output pins are placed in the high impedance state.
Am29LV033C Sector Address Table
Sector
A21
A20
A19
A18
A17
A16
Address Range
(in hexadecimal)
SA0
0
0
0
0
0
0
000000–00FFFF
SA1
0
0
0
0
0
1
010000–01FFFF
SA2
0
0
0
0
1
0
020000–02FFFF
SA3
0
0
0
0
1
1
030000–03FFFF
SA4
0
0
0
1
0
0
040000–04FFFF
SA5
0
0
0
1
0
1
050000–05FFFF
SA6
0
0
0
1
1
0
060000–06FFFF
SA7
0
0
0
1
1
1
070000–07FFFF
SA8
0
0
1
0
0
0
080000–08FFFF
SA9
0
0
1
0
0
1
090000–09FFFF
SA10
0
0
1
0
1
0
0A0000–0AFFFF
SA11
0
0
1
0
1
1
0B0000–0BFFFF
SA12
0
0
1
1
0
0
0C0000–0CFFFF
SA13
0
0
1
1
0
1
0D0000–0DFFFF
SA14
0
0
1
1
1
0
0E0000–0EFFFF
SA15
0
0
1
1
1
1
0F0000–0FFFFF
SA16
0
1
0
0
0
0
100000–10FFFF
SA17
0
1
0
0
0
1
110000–11FFFF
SA18
0
1
0
0
1
0
120000–12FFFF
SA19
0
1
0
0
1
1
130000–13FFFF
SA20
0
1
0
1
0
0
140000–14FFFF
SA21
0
1
0
1
0
1
150000–15FFFF
SA22
0
1
0
1
1
0
160000–16FFFF
SA23
0
1
0
1
1
1
170000–17FFFF
SA24
0
1
1
0
0
0
180000–18FFFF
SA25
0
1
1
0
0
1
190000–19FFFF
SA26
0
1
1
0
1
0
1A0000–1AFFFF
SA27
0
1
1
0
1
1
1B0000–1BFFFF
SA28
0
1
1
1
0
0
1C0000–1CFFFF
SA29
0
1
1
1
0
1
1D0000–1DFFFF
SA30
0
1
1
1
1
0
1E0000–1EFFFF
SA31
0
1
1
1
1
1
1F0000–1FFFFF
Am29LV033C
11
Table 2.
Am29LV033C Sector Address Table (Continued)
Sector
A21
A20
A19
A18
A17
A16
Address Range
(in hexadecimal)
SA32
1
0
0
0
0
0
200000–20FFFF
SA33
1
0
0
0
0
1
210000–21FFFF
SA34
1
0
0
0
1
0
220000–22FFFF
SA35
1
0
0
0
1
1
230000–23FFFF
SA36
1
0
0
1
0
0
240000–24FFFF
SA37
1
0
0
1
0
1
250000–25FFFF
SA38
1
0
0
1
1
0
260000–26FFFF
SA39
1
0
0
1
1
1
270000–27FFFF
SA40
1
0
1
0
0
0
280000–28FFFF
SA41
1
0
1
0
0
1
290000–29FFFF
SA42
1
0
1
0
1
0
2A0000–2AFFFF
SA43
1
0
1
0
1
1
2B0000–2BFFFF
SA44
1
0
1
1
0
0
2C0000–2CFFFF
SA45
1
0
1
1
0
1
2D0000–2DFFFF
SA46
1
0
1
1
1
0
2E0000–2EFFFF
SA47
1
0
1
1
1
1
2F0000–2FFFFF
SA48
1
1
0
0
0
0
300000–30FFFF
SA49
1
1
0
0
0
1
310000–31FFFF
SA50
1
1
0
0
1
0
320000–32FFFF
SA51
1
1
0
0
1
1
330000–33FFFF
SA52
1
1
0
1
0
0
340000–34FFFF
SA53
1
1
0
1
0
1
350000–35FFFF
SA54
1
1
0
1
1
0
360000–36FFFF
SA55
1
1
0
1
1
1
370000–37FFFF
SA56
1
1
1
0
0
0
380000–38FFFF
SA57
1
1
1
0
0
1
390000–39FFFF
SA58
1
1
1
0
1
0
3A0000–3AFFFF
SA59
1
1
1
0
1
1
3B0000–3BFFFF
SA60
1
1
1
1
0
0
3C0000–3CFFFF
SA61
1
1
1
1
0
1
3D0000–3DFFFF
SA62
1
1
1
1
1
0
3E0000–3EFFFF
SA63
1
1
1
1
1
1
3F0000–3FFFFF
Note: All sectors are 64 Kbytes in size.
12
Am29LV033C
Autoselect Mode
the remaining address bits that are don’t care. When
all necessary bits have been set as required, the programming equipment may then read the corresponding identifier code on DQ7-DQ0.
The autoselect mode provides manufacturer and device identification, and sector protection verification,
through identifier codes output on DQ7–DQ0. This
mode is primarily intended for programming equipment to automatically match a device to be programmed with its c orresponding programm ing
algorithm. However, the autoselect codes can also be
accessed in-system through the command register.
To access the autoselect codes in-system, the host
system can issue the autoselect command via the
command register, as shown in Table 9. This method
does not require VID. See “Writing specific address
and data commands or sequences into the command
register initiates device operations. Table 9 defines the
valid register command sequences. Writing incorrect
address and data values or writing them in the improper sequence resets the device to reading array
data.” for details on using the autoselect mode.
When using programming equipment, the autoselect
mode requires VID (11.5 V to 12.5 V) on address pin
A9. Address pins A6, A1, and A0 must be as shown in
Table 3. In addition, when verifying sector protection,
the sector address must appear on the appropriate
highest order address bits (see Table ). Table 3 shows
Table 3.
Am29LV033C Autoselect Codes (High Voltage Method)
CE#
OE#
WE#
A21
to
A16
Manufacturer ID: AMD
L
L
H
X
X
VID
X
L
X
L
L
01h
Device ID: Am29LV033C
L
L
H
X
X
VID
X
L
X
L
H
A3h
Description
A15
to
A10
A9
A8
to
A7
A6
A5
to
A2
A1
A0
DQ7
to
DQ0
01h
(protected)
Sector Protection Verification
L
L
H
SA
X
VID
X
L
X
H
L
00h
(unprotected)
L = Logic Low = VIL, H = Logic High = VIH, SA = Sector Address, X = Don’t care.
Sector/Sector Block Protection and
Unprotection
(Note: For the following discussion, the term “sector”
applies to both sectors and sector blocks. A sector
block consists of two or more adjacent sectors that are
protected or unprotected at the same time (see Table 4).
The hardware sector protection feature disables both
program and erase operations in any sector. The hardware sector unprotection feature re-enables both program and erase operations in previously protected
sectors. Sector protection/unprotection can be implemented via two methods.
The primary method requires VID on the RESET# pin
only, and can be implemented either in-system or via
programming equipment. Figure 2 shows the algorithms and Figure 22 shows the timing diagram. This
method uses standard microprocessor bus cycle tim-
ing. For sector unprotect, all unprotected sectors must
first be protected prior to the first sector unprotect
write cycle.
The alternate method intended only for programming
equipment requires VID on address pin A9 and OE#.
This method is compatible with programmer routines
written for earlier 3.0 volt-only AMD flash devices.
Publication number 22269 contains further details;
contact an AMD representative to request a copy.
The device is shipped with all sectors unprotected.
AMD offers the option of programming and protecting
sectors at its factory prior to shipping the device
through AMD’s ExpressFlash™ Service. Contact an
AMD representative for details.
It is possible to determine whether a sector is protected or unprotected. See “Autoselect Mode” for details.
Am29LV033C
13
Temporary Sector/Sector Block Unprotect
Table 4. Sector Block Addresses for
Protection/Unprotection
Sector/
Sector Block
A21–A16
Sector/
Sector Block Size
SA0
000000
64 Kbytes
SA1-SA3
000001,000010,
000011
192 (3x64) Kbytes
SA4-SA7
000100, 000101,
000110, 000111
256 (4x64) Kbytes
SA8-SA11
001000, 001001,
001010, 001011
256 (4x64) Kbytes
SA12-SA15
001100, 001101,
001110, 001111
256 (4x64) Kbytes
SA16-SA19
010000, 010001,
010010, 010011
256 (4x64) Kbytes
SA20-SA23
010100, 010101,
010110, 010111
256 (4x64) Kbytes
SA24-SA27
011000, 011001,
011010, 011011
256 (4x64) Kbytes
SA28-SA31
011100, 011101,
011110, 011111
256 (4x64) Kbytes
SA32-SA35
100000, 100001,
100010, 100011
256 (4x64) Kbytes
SA36-SA39
100100, 100101,
100110, 100111
256 (4x64) Kbytes
SA40-SA43
101000, 101001,
101010, 101011
256 (4x64) Kbytes
SA44-SA47
101100, 101101,
101110, 101111
256 (4x64) Kbytes
SA48-SA51
110000, 110001,
110010, 110011
256 (4x64) Kbytes
SA52-SA55
110100, 110101,
110110, 110111
256 (4x64) Kbytes
SA56-SA59
111000, 111001,
111010, 111011
256 (4x64) Kbytes
SA60-SA62
111100, 111101,
111110
192 (4x64) Kbytes
SA63
111111
64 Kbytes
(Note: For the following discussion, the term “sector”
applies to both sectors and sector blocks. A sector
block consists of two or more adjacent sectors that are
protected or unprotected at the same time (see Table
4).
This feature allows temporary unprotection of previously protected sectors to change data in-system. The
Sector Unprotect mode is activated by setting the RESET# pin to VID. During this mode, formerly protected
sectors can be programmed or erased by selecting the
sector addresses. Once VID is removed from the RESET# pin, all the previously protected sectors are
protected again. Figure 1 shows the algorithm, and
Figure 21 shows the timing diagrams, for this feature.
START
RESET# = VID
(Note 1)
Perform Erase or
Program Operations
RESET# = VIH
Temporary Sector
Unprotect Completed
(Note 2)
Notes:
1. All protected sectors unprotected.
2. All previously protected sectors are protected once
again.
Figure 1.
14
Am29LV033C
Temporary Sector Unprotect Operation
START
START
Protect all sectors:
The indicated portion
of the sector protect
algorithm must be
performed for all
unprotected sectors
prior to issuing the
first sector
unprotect address
PLSCNT = 1
RESET# = VID
Wait 1 µs
Temporary Sector
Unprotect Mode
No
PLSCNT = 1
RESET# = VID
Wait 1 µs
No
First Write
Cycle = 60h?
First Write
Cycle = 60h?
Yes
Yes
Set up sector
address
No
All sectors
protected?
Sector Protect:
Write 60h to sector
address with
A6 = 0, A1 = 1,
A0 = 0
Yes
Set up first sector
address
Sector Unprotect:
Write 60h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Wait 150 µs
Increment
PLSCNT
Temporary Sector
Unprotect Mode
Verify Sector
Protect: Write 40h
to sector address
with A6 = 0,
A1 = 1, A0 = 0
Reset
PLSCNT = 1
Wait 15 ms
Read from
sector address
with A6 = 0,
A1 = 1, A0 = 0
Verify Sector
Unprotect: Write
40h to sector
address with
A6 = 1, A1 = 1,
A0 = 0
Increment
PLSCNT
No
No
PLSCNT
= 25?
Yes
Yes
No
Yes
Device failed
PLSCNT
= 1000?
Protect another
sector?
No
Yes
Remove VID
from RESET#
Device failed
Write reset
command
Sector Protect
Algorithm
Read from
sector address
with A6 = 1,
A1 = 1, A0 = 0
Data = 01h?
Sector Protect
complete
Set up
next sector
address
No
Data = 00h?
Yes
Last sector
verified?
No
Yes
Sector Unprotect
Algorithm
Remove VID
from RESET#
Write reset
command
Sector Unprotect
complete
Figure 2. In-System Sector Protect/
Unprotect Algorithms
Am29LV033C
15
Hardware Data Protection
The command sequence requirement of unlock cycles
for programming or erasing provides data protection
against inadvertent writes (refer to Table 9 for command definitions). In addition, the following hardware
data protection measures prevent accidental erasure
or programming, which might otherwise be caused by
spurious system level signals during VCC power-up
and power-down transitions, or from system noise.
Low VCC Write Inhibit
When VCC is less than VLKO, the device does not accept any write cycles. This protects data during VCC
power-up and power-down. The command register
and all internal program/erase circuits are disabled,
and the device resets. Subsequent writes are ignored
until VCC is greater than VLKO. The system must pro-
vide the proper signals to the control pins to prevent
unintentional writes when VCC is greater than VLKO.
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#, CE#
or WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by holding any one of OE# =
VIL, CE# = VIH or WE# = VIH. To initiate a write cycle,
CE# and WE# must be a logical zero while OE# is a
logical one.
Power-Up Write Inhibit
If WE# = CE# = VIL and OE# = V IH during power up,
the device does not accept commands on the rising
edge of WE#. The internal state machine is automatically reset to reading array data on power-up.
COMMON FLASH MEMORY INTERFACE (CFI)
The Common Flash Interface (CFI) specification outlines device and host system software interrogation
handshake, which allows specific vendor-specified
software algorithms to be used for entire families of
devices. Software support can then be device-independent, JEDEC ID-independent, and forward- and
backward-compatible for the specified flash device
families. Flash vendors can standardize their existing
interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to address
55h, any time the device is ready to read array data.
The system can read CFI information at the addresses
Table 5.
16
given in Tables 5–8. To terminate reading CFI data,
the system must write the reset command.
The system can also write the CFI query command
when the device is in the autoselect mode. The device
enters the CFI query mode, and the system can read
CFI data at the addresses given in Tables 5–8. The
system must write the reset command to return the
device to the autoselect mode.
For further information, please refer to the CFI Specification and CFI Publication 100, available via the World
Wide Web at http://www.amd.com/products/nvd/overview/cfi.html. Alternatively, contact an AMD representative for copies of these documents.
CFI Query Identification String
Addresses
Data
Description
10h
11h
12h
51h
52h
59h
Query Unique ASCII string “QRY”
13h
14h
02h
00h
Primary OEM Command Set
15h
16h
40h
00h
Address for Primary Extended Table
17h
18h
00h
00h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
00h
00h
Address for Alternate OEM Extended Table (00h = none exists)
Am29LV033C
Table 6.
System Interface String
Addresses
Data
Description
1Bh
27h
VCC Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
36h
VCC Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
00h
VPP Min. voltage (00h = no VPP pin present)
1Eh
00h
VPP Max. voltage (00h = no VPP pin present)
1Fh
04h
Typical timeout per single byte/word write 2N µs
20h
00h
Typical timeout for Min. size buffer write 2N µs (00h = not supported)
21h
0Ah
Typical timeout per individual block erase 2N ms
22h
00h
Typical timeout for full chip erase 2N ms (00h = not supported)
23h
05h
Max. timeout for byte/word write 2N times typical
24h
00h
Max. timeout for buffer write 2N times typical
25h
04h
Max. timeout per individual block erase 2N times typical
26h
00h
Max. timeout for full chip erase 2N times typical (00h = not supported)
Table 7.
Device Geometry Definition
Addresses
Data
Description
27h
16h
Device Size = 2N byte
28h
29h
00h
00h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
00h
00h
Max. number of byte in multi-byte write = 2N
(00h = not supported)
2Ch
01h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
3Fh
00h
00h
01h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
00h
00h
00h
00h
Erase Block Region 2 Information
35h
36h
37h
38h
00h
00h
00h
00h
Erase Block Region 3 Information
39h
3Ah
3Bh
3Ch
00h
00h
00h
00h
Erase Block Region 4 Information
Am29LV033C
17
Table 8.
18
Primary Vendor-Specific Extended Query
Addresses
Data
Description
40h
41h
42h
50h
52h
49h
Query-unique ASCII string “PRI”
43h
31h
Major version number, ASCII
44h
30h
Minor version number, ASCII
45h
01h
Address Sensitive Unlock
0 = Required, 1 = Not Required
46h
02h
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
47h
01h
Sector Protect
0 = Not Supported, X = Number of sectors in per group
48h
04h
Sector Temporary Unprotect: 04 = Supported
49h
04h
Sector Protect/Unprotect scheme
01 = 29F040 mode, 02 = 29F016 mode,
03 = 29F400 mode, 04 = 29LV800A mode
4Ah
20h
Simultaneous Operation: 20 = Not Supported
4Bh
00h
Burst Mode Type: 00 = Not Supported, 01 = Supported
4Ch
00h
Page Mode Type: 00 = Not Supported, 01 = 4 Word Page,
02 = 8 Word Page
Am29LV033C
COMMAND DEFINITIONS
Writing specific address and data commands or sequences into the command register initiates device operations. Table 9 defines the valid register command
sequences. Writing incorrect address and data values or writing them in the improper sequence resets
the device to reading array data.
All addresses are latched on the falling edge of WE#
or CE#, whichever happens later. All data is latched on
the rising edge of WE# or CE#, whichever happens
first. Refer to the appropriate timing diagrams in the
“AC Characteristics” section.
Reading Array Data
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is also ready to read array
data after completing an Embedded Program or Embedded Erase algorithm.
After the device accepts an Erase Suspend command,
the device enters the Erase Suspend mode. The system can read array data using the standard read timings, except that if it reads at an address within
erase-suspended sectors, the device outputs status
data. After completing a programming operation in the
Erase Suspend mode, the system may once again
read array data with the same exception. See “Erase
Suspend/Erase Resume Commands” for more information on this mode.
The reset command may be written between the sequence cycles in an autoselect command sequence.
Once in the autoselect mode, the reset command
must be written to return to reading array data (also
applies to autoselect during Erase Suspend).
If DQ5 goes high during a program or erase operation,
writing the reset command returns the device to reading array data (also applies during Erase Suspend).
Autoselect Command Sequence
The autoselect command sequence allows the host
system to access the manufacturer and devices
codes, and determine whether or not a sector is protected. Table 9 shows the address and data requirements. This method is an alternative to that shown in
Table 3, which is intended for PROM programmers
and requires VID on address bit A9.
The autoselect command sequence is initiated by writing two unlock cycles, followed by the autoselect command. The device then enters the autoselect mode,
and the system may read at any address any number
of times, without initiating another command sequence. A read cycle at address XX00h retrieves the
manufacturer code. A read cycle at address XX01h returns the device code. A read cycle containing a sector
address (SA) and the address 02h returns 01h if that
sector is protected, or 00h if it is unprotected. Refer to
Table for valid sector addresses.
The system must issue the reset command to re-enable the device for reading array data if DQ5 goes
high, or while in the autoselect mode. See the “Reset
Command” section, next.
The system must write the reset command to exit the
autoselect mode and return to reading array data.
See also “Requirements for Reading Array Data” in
the “Device Bus Operations” section for more information. The Read Operations table provides the read parameters, and Figure 13 shows the timing diagram.
The device programs one byte of data for each program operation. The command sequence requires four
bus cycles, and is initiated by writing two unlock write
cycles, followed by the program set-up command. The
program address and data are written next, which in
turn initiate the Embedded Program algorithm. The
system is not required to provide further controls or
timings. The device automatically generates the program pulses and verifies the programmed cell margin.
Table 9 shows the address and data requirements for
the byte program command sequence.
Reset Command
Writing the reset command to the device resets the
device to reading array data. Address bits are don’t
care for this command.
The reset command may be written between the sequence cycles in an erase command sequence before
erasing begins. This resets the device to reading array
data. Once erasure begins, however, the device ignores reset commands until the operation is complete.
The reset command may be written between the sequence cycles in a program command sequence before programming begins. This resets the device to
reading array data (also applies to programming in
Erase Suspend mode). Once programming begins,
however, the device ignores reset commands until the
operation is complete.
Byte Program Command Sequence
When the Embedded Program algorithm is complete,
the device then returns to reading array data and addresses are no longer latched. The system can determine the status of the program operation by using
DQ7, DQ6, or RY/BY#. See “Write Operation Status”
for information on these status bits.
Any commands written to the device during the Embedded Program Algorithm are ignored. Note that a
hardware reset immediately terminates the programming operation. The Byte Program command se-
Am29LV033C
19
quence should be reinitiated once the device has reset
to reading array data, to ensure data integrity.
START
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed
from a “0” back to a “1”. Attempting to do so may
halt the operation and set DQ5 to “1,” or cause the
Data# Polling algorithm to indicate the operation was
successful. However, a succeeding read will show that
the data is still “0”. Only erase operations can convert
a “0” to a “1”.
Write Program
Command Sequence
Unlock Bypass Command Sequence
The unlock bypass feature allows the system to program bytes to the device faster than using the standard program command sequence. The unlock bypass
command sequence is initiated by first writing two unlock cycles. This is followed by a third write cycle containing the unlock bypass command, 20h. The device
then enters the unlock bypass mode. A two-cycle unlock bypass program command sequence is all that is
required to program in this mode. The first cycle in this
sequence contains the unlock bypass program command, A0h; the second cycle contains the program
address and data. Additional data is programmed in
the same manner. This mode dispenses with the initial
two unlock cycles required in the standard program
command sequence, resulting in faster total programming time. Table 9 shows the requirements for the
command sequence.
During the unlock bypass mode, only the Unlock Bypass Program and Unlock Bypass Reset commands
are valid. To exit the unlock bypass mode, the system
must issue the two-cycle unlock bypass reset command sequence. The first cycle must contain the data
90h; the second cycle the data 00h. Addresses are
don’t cares for both cycles. The device then returns to
reading array data.
Accelerated Program Operations
The device offers accelerated program operations
through the ACC pin. When the system asserts VHH on
the ACC pin, the device automatically enters the Unlock Bypass mode. The system may then write the
two-cycle Unlock Bypass program command sequence, eliminating two cycles from the command sequence. In addition, the device uses the higher voltage
on the ACC pin to accelerate the operation. Note that
the ACC pin must not be at VHH during read or erase
operations, or device damage may result. If ACC is to
be permanently set, it is recommended that it be tied
to VCC to minimize current consumption.
Figure 3 illustrates the algorithm for the program operation. See the Erase/Program Operations table in “AC
Characteristics” for parameters, and to Figure 15 for
timing diagrams.
20
Data Poll
from System
Embedded
Program
algorithm
in progress
Verify Data?
No
Yes
Increment Address
No
Last Address?
Yes
Programming
Completed
Note: See Table 9 for program command sequence.
Figure 3.
Program Operation
Chip Erase Command Sequence
Chip erase is a six bus cycle operation. The chip erase
command sequence is initiated by writing two unlock
cycles, followed by a set-up command. Two additional
unlock write cycles are then followed by the chip erase
command, which in turn invokes the Embedded Erase
algorithm. The device does not require the system to
preprogram prior to erase. The Embedded Erase algorithm automatically preprograms and verifies the entire
memory for an all zero data pattern prior to electrical
erase. The system is not required to provide any controls or timings during these operations. Table 9 shows
the address and data requirements for the chip erase
command sequence.
Any commands written to the chip during the Embedded Erase algorithm are ignored. Note that a hardware reset dur ing the chip erase operation
immediately terminates the operation. The Chip Erase
command sequence should be reinitiated once the de-
Am29LV033C
vice has returned to reading array data, to ensure data
integrity.
The system can determine the status of the erase operation by using DQ7, DQ6, DQ2, or RY/BY#. See
“Write Operation Status” for information on these status bits. When the Embedded Erase algorithm is complete, the device returns to reading array data and
addresses are no longer latched.
Figure 4 illustrates the algorithm for the erase operation. See the Erase/Program Operations tables in “AC
Characteristics” for parameters, and to Figure 17 for
timing diagrams.
Sector Erase Command Sequence
Sector erase is a six bus cycle operation. The sector
erase command sequence is initiated by writing two
unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the
address of the sector to be erased, and the sector
erase command. Table 9 shows the address and data
requirements for the sector erase command sequence.
The device does not require the system to preprogram
the memory prior to erase. The Embedded Erase algorithm automatically programs and verifies the sector
for an all zero data pattern prior to electrical erase.
The system is not required to provide any controls or
timings during these operations.
After the command sequence is written, a sector erase
time-out of 50 µs begins. During the time-out period,
additional sector addresses and sector erase commands may be written. Loading the sector erase buffer
may be done in any sequence, and the number of sectors may be from one sector to all sectors. The time
between these additional cycles must be less than 50
µs, otherwise the last address and command might
not be accepted, and erasure may begin. It is recommended that processor interrupts be disabled during
this time to ensure all commands are accepted. The
interrupts can be re-enabled after the last Sector
Erase command is written. If the time between additional sector erase commands can be assumed to be
less than 50 µs, the system need not monitor DQ3.
Any command other than Sector Erase or Erase
Suspend during the time-out period resets the device to reading array data. The system must rewrite
the command sequence and any additional sector addresses and commands.
The system can monitor DQ3 to determine if the sector erase timer has timed out. (See the “DQ3: Sector
Erase Timer” section.) The time-out begins from the
rising edge of the final WE# pulse in the command sequence.
Once the sector erase operation has begun, only the
Erase Suspend command is valid. All other com-
mands are ignored. Note that a hardware reset during the sector erase operation immediately terminates
the operation. The Sector Erase command sequence
should be reinitiated once the device has returned to
reading array data, to ensure data integrity.
When the Embedded Erase algorithm is complete, the
device returns to reading array data and addresses
are no longer latched. The system can determine the
status of the erase operation by using DQ7, DQ6,
DQ2, or RY/BY#. (Refer to “Write Operation Status” for
information on these status bits.)
Figure 4 illustrates the algorithm for the erase operation. Refer to the Erase/Program Operations tables in
the “AC Characteristics” section for parameters, and to
Figure 17 for timing diagrams.
Erase Suspend/Erase Resume
Commands
The Erase Suspend command allows the system to interrupt a sector erase operation and then read data
from, or program data to, any sector not selected for
erasure. This command is valid only during the sector
erase operation, including the time-out period 50 µs
during the sector erase command sequence. The
Erase Suspend command is ignored if written during
the chip erase operation or Embedded Program algorithm. Writing the Erase Suspend command during the
Sector Erase time-out immediately terminates the
time-out period and suspends the erase operation. Addresses are “don’t-cares” when writing the Erase Suspend command.
When the Erase Suspend command is written during a
sector erase operation, the device requires a maximum of 20 µs to suspend the erase operation. However, when the Erase Suspend command is written
during the sector erase time-out, the device immediately terminates the time-out period and suspends the
erase operation.
After the erase operation has been suspended, the
system can read array data from or program data to
any sector not selected for erasure. (The device “erase
suspends” all sectors selected for erasure.) Normal
read and write timings and command definitions apply.
Reading at any address within erase-suspended sectors produces status data on DQ7–DQ0. The system
can use DQ7, or DQ6 and DQ2 together, to determine
if a sector is actively erasing or is erase-suspended.
See “Write Operation Status” for information on these
status bits.
After an erase-suspended program operation is complete, the system can once again read array data
within non-suspended sectors. The system can determine the status of the program operation using the
DQ7 or DQ6 status bits, just as in the standard pro-
Am29LV033C
21
gram operation. See “Write Operation Status” for more
information.
START
The system may also write the autoselect command
sequence when the device is in the Erase Suspend
mode. The device allows reading autoselect codes
even at addresses within erasing sectors, since the
codes are not stored in the memory array. When the
device exits the autoselect mode, the device reverts to
the Erase Suspend mode, and is ready for another
valid operation. See “Autoselect Command Sequence”
for more information.
Write Erase
Command Sequence
Data Poll
from System
The system must write the Erase Resume command
(address bits are “don’t care”) to exit the erase suspend mode and continue the sector erase operation.
Further writes of the Resume command are ignored.
Another Erase Suspend command can be written after
the device has resumed erasing.
No
Embedded
Erase
algorithm
in progress
Data = FFh?
Yes
Erasure Completed
Notes:
1. See Table 9 for erase command sequence.
2. See “DQ3: Sector Erase Timer” for more information.
Figure 4.
22
Am29LV033C
Erase Operation
Table 9.
Am29LV033C Command Definitions
Cycles
Bus Cycles (Notes 2–4)
Command Sequence
(Note 1)
First
Read (Note 5)
1
RA
RD
Reset (Note 6)
1
XXX
F0
Autoselect
(Note 7)
Second
Addr Data Addr Data
Third
Fourth
Addr
Data
Addr
Fifth
Data Addr Data
Manufacturer ID (Note 8)
4
XXX
AA
XXX
55
0XXXXX
90
0XXX00
01
Device ID (Note 8)
4
XXX
AA
XXX
55
0XXXXX
90
0XXX01
A3
Sector Protect Verify
(Note 9)
4
55
0XXXXX
or
2XXXXX
90
SA
X02
01
PA
PD
XXX
XXX
XXX
AA
XXX
Sixth
Addr
Data
00
Byte Program
4
XXX
AA
XXX
55
XXX
A0
Unlock Bypass
3
XXX
AA
XXX
55
XXX
20
Unlock Bypass Program
(Note 10)
2
XXX
A0
PA
PD
Unlock Bypass Reset
(Note 11)
2
XXX
90
XXX
00
Chip Erase
6
XXX
AA
XXX
55
XXX
80
XXX
AA
XXX
55
XXX
10
Sector Erase
6
XXX
AA
XXX
55
XXX
80
XXX
AA
XXX
55
SA
30
Erase Suspend (Note 12)
1
XXX
B0
Erase Resume (Note 13)
1
XXX
30
CFI Query (Note 14)
1
XXX
98
Legend:
PD = Data to be programmed at location PA. Data is latched on
the rising edge of WE# or CE# pulse.
X = Don’t care
RA = Address of the memory location to be read.
RD = Data read from location RA during read operation.
PA = Address of the memory location to be programmed. Addresses are latched on the falling edge of the WE# or CE#
pulse.
Notes:
1. See Table 1 for descriptions of bus operations.
2. All values are in hexadecimal.
3. Except when reading array or autoselect data, all bus cycles
are write operations.
4. Address bits are don’t care for unlock and command cycles,
except when PA or SA is required.
5. No unlock or command cycles required when device is in read
mode.
6. The Reset command is required to return to the read mode
when the device is in the autoselect mode or if DQ5 goes high.
7. The fourth cycle of the autoselect command sequence is a
read cycle.
SA = Address of the sector to be erased or verified. Address bits
A21–A16 uniquely select any sector.
8. In the third and fourth cycles of the command sequence, set
A21 to 0.
9. In the third cycle of the command sequence, address bit A21
must be set to 0 if verifying sectors 0–31, or to 1 if verifying
sectors 32–64. The data in the fourth cycle is 00h for an
unprotected sector/sector block and 01h for a protected
sector/sector block.
10. The Unlock Bypass command is required prior to the Unlock
Bypass Program command.
11. The Unlock Bypass Reset command is required to return to
reading array data when the device is in the Unlock Bypass
mode.
12. The system may read and program functions in non-erasing
sectors, or enter the autoselect mode, when in the Erase
Suspend mode. The Erase Suspend command is valid only
during a sector erase operation.
13. The Erase Resume command is valid only during the Erase
Suspend mode.
14. Command is valid when device is ready to read array data or
when device is in autoselect mode.
Am29LV033C
23
WRITE OPERATION STATUS
The device provides several bits to determine the status of a write operation: DQ2, DQ3, DQ5, DQ6, DQ7,
and RY/BY#. Table 10 and the following subsections
describe the functions of these bits. DQ7, RY/BY#,
and DQ6 each offer a method for determining whether
a program or erase operation is complete or in
progress. These three bits are discussed first.
Table 10 shows the outputs for Data# Polling on DQ7.
Figure 5 shows the Data# Polling algorithm.
START
DQ7: Data# Polling
The Data# Polling bit, DQ7, indicates to the host system whether an Embedded Algorithm is in progress or
completed, or whether the device is in Erase Suspend.
Data# Polling is valid after the rising edge of the final
WE# pulse in the program or erase command sequence.
During the Embedded Program algorithm, the device
outputs on DQ7 the complement of the datum programmed to DQ7. This DQ7 status also applies to programming during Erase Suspend. When the
Embedded Program algorithm is complete, the device
outputs the datum programmed to DQ7. The system
must provide the program address to read valid status
information on DQ7. If a program address falls within a
protected sector, Data# Polling on DQ7 is active for
approximately 1 µs, then the device returns to reading
array data.
Read DQ7–DQ0
Addr = VA
DQ7 = Data?
No
No
DQ5 = 1?
Yes
During the Embedded Erase algorithm, Data# Polling
produces a “0” on DQ7. When the Embedded Erase
algorithm is complete, or if the device enters the Erase
Suspend mode, Data# Polling produces a “1” on DQ7.
This is analogous to the complement/true datum output described for the Embedded Program algorithm:
the erase function changes all the bits in a sector to
“1”; prior to this, the device outputs the “complement,”
or “0.” The system must provide an address within any
of the sectors selected for erasure to read valid status
information on DQ7.
Read DQ7–DQ0
Addr = VA
After an erase command sequence is written, if all
sectors selected for erasing are protected, Data# Polling on DQ7 is active for approximately 100 µs, then the
device returns to reading array data. If not all selected
sectors are protected, the Embedded Erase algorithm
erases the unprotected sectors, and ignores the selected sectors that are protected.
FAIL
When the system detects DQ7 has changed from the
complement to true data, it can read valid data at
DQ7–DQ0 on the following read cycles. This is bec a u s e D Q 7 m ay ch a n g e a s yn c h ro n o u s l y w i t h
DQ0–DQ6 while Output Enable (OE#) is asserted low.
F i g u r e 1 8 , D a t a # Po l l i n g T i m i n g s ( D u r i n g
Embedded Algorithms), in the “AC Characteristics”
section illustrates this.
24
Yes
DQ7 = Data?
Yes
No
PASS
Notes:
1. VA = Valid address for programming. During a sector
erase operation, a valid address is an address within
any sector selected for erasure. During chip erase, a
valid address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 = “1” because
DQ7 may change simultaneously with DQ5.
Am29LV033C
Figure 5.
Data# Polling Algorithm
RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin that
indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid after
the rising edge of the final WE# pulse in the command
sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a
pull-up resistor to VCC.
If the output is low (Busy), the device is actively erasing or programming. (This includes programming in
the Erase Suspend mode.) If the output is high
(Ready), the device is ready to read array data (including during the Erase Suspend mode), or is in the
standby mode.
Table 10 shows the outputs for RY/BY#. Figures 14, 15
and 17 shows RY/BY# for reset, program, and erase
operations, respectively.
DQ6: Toggle Bit I
Toggle Bit I on DQ6 indicates whether an Embedded
Program or Erase algorithm is in progress or complete, or whether the device has entered the Erase
Suspend mode. Toggle Bit I may be read at any address, and is valid after the rising edge of the final
WE# pulse in the command sequence (prior to the
program or erase operation), and during the sector
erase time-out.
During an Embedded Program or Erase algorithm operation, successive read cycles to any address cause
DQ6 to toggle (The system may use either OE# or
CE# to control the read cycles). When the operation is
complete, DQ6 stops toggling.
After an erase command sequence is written, if all
sectors selected for erasing are protected, DQ6 toggles for approximately 100 µs, then returns to reading
array data. If not all selected sectors are protected, the
Embedded Erase algorithm erases the unprotected
sectors, and ignores the selected sectors that are protected.
The system can use DQ6 and DQ2 together to determine whether a sector is actively erasing or is
erase-suspended. When the device is actively erasing
(that is, the Embedded Erase algorithm is in progress),
DQ6 toggles. When the device enters the Erase Suspend mode, DQ6 stops toggling. However, the system
must also use DQ2 to determine which sectors are
erasing or erase-suspended. Alternatively, the system
can use DQ7 (see the subsection on DQ7: Data# Polling).
If a program address falls within a protected sector,
DQ6 toggles for approximately 1 µs after the program
command sequence is written, then returns to reading
array data.
DQ6 also toggles during the erase-suspend-program
mode, and stops toggling once the Embedded Program algorithm is complete.
Table 10 shows the outputs for Toggle Bit I on DQ6.
Figure 6 shows the toggle bit algorithm in flowchart
form, and the section “Reading Toggle Bits DQ6/DQ2”
explains the algorithm. Figure 19 in the “AC Characteristics” section shows the toggle bit timing diagrams.
Figure 20 shows the differences between DQ2 and
DQ6 in graphical form. See also the subsection on
DQ2: Toggle Bit II.
DQ2: Toggle Bit II
The “Toggle Bit II” on DQ2, when used with DQ6, indicates whether a particular sector is actively erasing
(that is, the Embedded Erase algorithm is in progress),
or whether that sector is erase-suspended. Toggle Bit
II is valid after the rising edge of the final WE# pulse in
the command sequence.
DQ2 toggles when the system reads at addresses
within those sectors that have been selected for erasure. (The system may use either OE# or CE# to control the read cycles.) But DQ2 cannot distinguish
whether the sector is actively erasing or is erase-suspended. DQ6, by comparison, indicates whether the
device is actively erasing, or is in Erase Suspend, but
cannot distinguish which sectors are selected for erasure. Thus, both status bits are required for sector and
mode information. Refer to Table 10 to compare outputs for DQ2 and DQ6.
Figure 6 shows the toggle bit algorithm in flowchart
form, and the section “Reading Toggle Bits DQ6/DQ2”
explains the algorithm. See also the DQ6: Toggle Bit I
subsection. Figure 19 shows the toggle bit timing diagram. Figure 20 shows the differences between DQ2
and DQ6 in graphical form.
Reading Toggle Bits DQ6/DQ2
Refer to Figure 6 for the following discussion. Whenever the system initially begins reading toggle bit status, it must read DQ7–DQ0 at least twice in a row to
determine whether a toggle bit is toggling. Typically,
the system would note and store the value of the toggle bit after the first read. After the second read, the
system would compare the new value of the toggle bit
with the first. If the toggle bit is not toggling, the device
has completed the program or erase operation. The
system can read array data on DQ7–DQ0 on the following read cycle.
However, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high
(see the section on DQ5). If it is, the system should
then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling
just as DQ5 went high. If the toggle bit is no longer
Am29LV033C
25
toggling, the device has successfully completed the
program or erase operation. If it is still toggling, the device did not completed the operation successfully, and
the system must write the reset command to return to
reading array data.
START
The remaining scenario is that the system initially determines that the toggle bit is toggling and DQ5 has
not gone high. The system may continue to monitor
the toggle bit and DQ5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform
other system tasks. In this case, the system must start
at the beginning of the algorithm when it returns to determine the status of the operation (top of Figure 6).
Read DQ7–DQ0
(Note 1)
Read DQ7–DQ0
Toggle Bit
= Toggle?
Table 10 shows the outputs for Toggle Bit I on DQ6.
Figure 6 shows the toggle bit algorithm. Figure 19 in
the “AC Characteristics” section shows the toggle bit
timing diagrams. Figure 20 shows the differences between DQ2 and DQ6 in graphical form. See also the
subsection on DQ2: Toggle Bit II.
No
Yes
No
DQ5 = 1?
DQ5: Exceeded Timing Limits
Yes
DQ5 indicates whether the program or erase time has
exceeded a specified internal pulse count limit. Under
these conditions DQ5 produces a “1.” This is a failure
condition that indicates the program or erase cycle
was not successfully completed.
Read DQ7–DQ0
Twice
The DQ5 failure condition may appear if the system
tries to program a “1” to a location that is previously
programmed to “0.” Only an erase operation can
change a “0” back to a “1.” Under this condition, the
device halts the operation, and when the operation
has exceeded the timing limits, DQ5 produces a “1.”
Toggle Bit
= Toggle?
After writing a sector erase command sequence, the
system may read DQ3 to determine whether or not an
erase operation has begun. (The sector erase timer
does not apply to the chip erase command.) If additional sectors are selected for erasure, the entire
time-out also applies after each additional sector
erase command. When the time-out is complete, DQ3
switches from “0” to “1.” If the time between additional
sector erase commands from the system can be assumed to be less than 50 µs, the system need not
monitor DQ3. See also the “Sector Erase Command
Sequence” section.
After the sector erase command sequence is written,
the system should read the status on DQ7 (Data# Polling) or DQ6 (Toggle Bit I) to ensure the device has accepted the command sequence, and then read DQ3. If
26
No
Yes
Program/Erase
Operation Not
Complete, Write
Reset Command
Under both these conditions, the system must issue
the reset command to return the device to reading
array data.
DQ3: Sector Erase Timer
(Notes
1, 2)
Program/Erase
Operation Complete
Notes:
1. Read toggle bit twice to determine whether or not it is
toggling. See text.
2. Recheck toggle bit because it may stop toggling as DQ5
changes to “1”. See text.
Figure 6.
Toggle Bit Algorithm
DQ3 is “1”, the internally controlled erase cycle has
begun; all further commands (other than Erase Suspend) are ignored until the erase operation is complete. If DQ3 is “0”, the device will accept additional
sector erase commands. To ensure the command has
been accepted, the system software should check the
status of DQ3 prior to and following each subsequent
sector erase command. If DQ3 is high on the second
status check, the last command might not have been
accepted. Table 10 shows the outputs for DQ3.
Am29LV033C
Table 10.
DQ7
(Note 2)
DQ6
DQ5
(Note 1)
DQ3
DQ2
(Note 2)
RY/BY#
DQ7#
Toggle
0
N/A
No toggle
0
Embedded Erase Algorithm
0
Toggle
0
1
Toggle
0
Reading within Erase
Suspended Sector
1
No toggle
0
N/A
Toggle
1
Reading within Non-Erase
Suspended Sector
Data
Data
Data
Data
Data
1
Erase-Suspend-Program
DQ7#
Toggle
0
N/A
N/A
0
Operation
Standard
Mode
Erase
Suspend
Mode
Write Operation Status
Embedded Program Algorithm
Notes:
1. DQ5 switches to ‘1’ when an Embedded Program or Embedded Erase operation has exceeded the maximum timing limits.
See “DQ5: Exceeded Timing Limits” for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for further
details.
Am29LV033C
27
ABSOLUTE MAXIMUM RATINGS
OPERATING RANGES
Storage Temperature
Plastic Packages . . . . . . . . . . . . . . . –65°C to +150°C
Commercial (C) Devices
Ambient Temperature
with Power Applied. . . . . . . . . . . . . . –65°C to +125°C
Voltage with Respect to Ground
Ambient Temperature (TA). . . . . . . . . . . .0°C to +70°C
Industrial (I) Devices
Ambient Temperature (TA). . . . . . . . . .–40°C to +85°C
VCC (Note 1) . . . . . . . . . . . . . . . . .–0.5 V to +4.0 V
A9, OE#, and
RESET# (Note 2) . . . . . . . . . . . .–0.5 V to +12.5 V
All other pins (Note 1) . . . . . . .–0.5 V to VCC+0.5 V
Extended (E) Devices
Ambient Temperature (TA). . . . . . . . .–55°C to +125°C
VCC Supply Voltages
Output Short Circuit Current (Note 3) . . . . . . 200 mA
VCC for full voltage range. . . . . . . . . . . +2.7 V to 3.6 V
Notes:
1. Minimum DC voltage on input or I/O pins is –0.5 V.
During voltage transitions, input or I/O pins may
overshoot VSS to –2.0 V for periods of up to 20 ns. See
Figure 7. Maximum DC voltage on input or I/O pins is
VCC +0.5 V. During voltage transitions, input or I/O pins
may overshoot to VCC +2.0 V for periods up to 20 ns. See
Figure 8.
Operating ranges define those limits between which the functionality of the device is guaranteed.
2. Minimum DC input voltage on pins A9, OE#, and RESET#
is –0.5 V. During voltage transitions, A9, OE#, and RESET#
may overshoot VSS to –2.0 V for periods of up to 20 ns. See
Figure 7. Maximum DC input voltage on pin A9 is +12.5 V
which may overshoot to 14.0 V for periods up to 20 ns.
3. No more than one output may be shorted to ground at a
time. Duration of the short circuit should not be greater than
one second.
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only; functional operation of the device at these
or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of
the device to absolute maximum rating conditions for extended periods may affect device reliability.
20 ns
20 ns
+0.8 V
20 ns
VCC+2.0 V
VSS–0.5 V
VCC+0.5 V
VSS–2.0 V
2.0 V
20 ns
20 ns
Figure 7. Maximum Negative
Overshoot Waveform
28
20 ns
Figure 8. Maximum Positive
Overshoot Waveform
Am29LV033C
DC CHARACTERISTICS
CMOS Compatible
Parameter
Description
Test Conditions
Min
ILI
Input Load Current (Note 1)
VIN = VSS to VCC,
VCC = VCC max
ILIT
A9 Input Load Current
VCC = VCC max; A9 = 12.5 V
ILO
Output Leakage Current
VOUT = VSS to VCC,
VCC = VCC max
ICC1
VCC Active Read Current
(Notes 2, 3)
CE# = VIL, OE# = VIH
ICC2
VCC Active Write Current
(Notes 2, 4, 6)
ICC3
Typ
Max
Unit
±1.0
µA
35
µA
±1.0
µA
5 MHz
10
16
1 MHz
2
4
CE# = VIL, OE# = VIH
15
30
mA
VCC Standby Current (Note 2)
CE#, RESET#, ACC = VCC±0.3 V
0.2
5
µA
ICC4
VCC Reset Current (Note 2)
RESET# = VSS ± 0.3 V,
ACC = VCC ± 0.3 V
0.2
5
µA
ICC5
Automatic Sleep Mode
(Notes 2, 5)
VIH = VCC ± 0.3 V;
VIL = VSS ± 0.3 V,
ACC = VCC ± 0.3 V
0.2
5
µA
ACC
pin
5
10
mA
IACC
ACC Accelerated Program
Current,
Word or Byte
VCC pin
15
30
mA
mA
CE# = VIL, OE# = VIH
VIL
Input Low Voltage
–0.5
0.8
V
VIH
Input High Voltage
0.7 x VCC
VCC + 0.3
V
VHH
Voltage for ACC Sector
Protect/Unprotect and Program
Acceleration
VCC = 3.0 V ± 10%
8.5
9.5
V
VID
Voltage for Autoselect and
Temporary Sector Unprotect
VCC = 3.3 V
11.5
12.5
V
VOL
Output Low Voltage
IOL = 4.0 mA, VCC = VCC min
0.45
V
VOH1
Output High Voltage
VOH2
VLKO
IOH = –2.0 mA, VCC = VCC min
0.85 VCC
IOH = –100 µA, VCC = VCC min
VCC–0.4
Low VCC Lock-Out Voltage
(Note 6)
2.3
V
2.5
V
Notes:
1. On the ACC pin only, the maximum input load current when ACC = VIL is ±5.0 µA.
2. Maximum ICC specifications are tested with VCC = VCCmax.
3. The ICC current listed is typically is less than 2 mA/MHz, with OE# at VIH. Typical specifications are for VCC = 3.0 V.
4. ICC active while Embedded Erase or Embedded Program is in progress.
5. Automatic sleep mode enables the low power mode when addresses remain stable for tACC + 30 ns. Typical sleep mode current is
200 nA.
6. Not 100% tested.
Am29LV033C
29
DC CHARACTERISTICS (Continued)
Zero Power Flash
Supply Current in mA
25
20
15
10
5
0
0
500
1000
1500
2000
2500
3000
3500
4000
Time in ns
Note: Addresses are switching at 1 MHz
Figure 9.
ICC1 Current vs. Time (Showing Active and Automatic Sleep Currents)
12
3.6 V
10
2.7 V
Supply Current in mA
8
6
4
2
0
1
Note: T = 25 °C
2
3
Frequency in MHz
Figure 10. Typical ICC1 vs. Frequency
30
Am29LV033C
4
5
TEST CONDITIONS
Table 11.
Test Specifications
3.3 V
Test Condition
Output Load
2.7 kΩ
Device
Under
Test
CL
-70
-90, -120
Unit
1 TTL gate
Output Load
Capacitance, CL
(including jig capacitance)
30
100
pF
6.2 kΩ
Input Rise and Fall Times
5
ns
0.0–3.0
V
Input timing measurement
reference levels
1.5
V
Output timing measurement
reference levels
1.5
V
Input Pulse Levels
Note: Diodes are IN3064 or equivalent
Figure 11.
Test Setup
KEY TO SWITCHING WAVEFORMS
WAVEFORM
INPUTS
OUTPUTS
Steady
Changing from H to L
Changing from L to H
3.0 V
Input
Don’t Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Center Line is High Impedance State (High Z)
1.5 V
Measurement Level
1.5 V
Output
0.0 V
Figure 12. Input Waveforms and
Measurement Levels
Am29LV033C
31
AC CHARACTERISTICS
Read Operations
Parameter
Speed Option
JEDEC
Std
Description
tAVAV
tRC
Read Cycle Time (Note 1)
tAVQV
tACC
Address to Output Delay
tELQV
tCE
Chip Enable to Output Delay
tGLQV
tOE
tEHQZ
tGHQZ
tAXQX
Test Setup
-70
-90
-120
Unit
Min
70
90
120
ns
CE# = VIL
OE# = VIL
Max
70
90
120
ns
OE# = VIL
Max
70
90
120
ns
Output Enable to Output Delay
Max
30
40
50
ns
tDF
Chip Enable to Output High Z (Note 1)
Max
25
30
30
ns
tDF
Output Enable to Output High Z (Note 1)
Max
25
30
30
ns
tOEH
Output Enable
Hold Time (Note 1)
tOH
Output Hold Time From Addresses, CE# or OE#,
Whichever Occurs First (Note 1)
Read
Min
0
ns
Toggle and
Data# Polling
Min
10
ns
Min
0
ns
Notes:
1. Not 100% tested.
2. See Figure 11 and Table 11 for test specifications.
tRC
Addresses Stable
Addresses
tACC
CE#
tDF
tOE
OE#
tOEH
WE#
tCE
tOH
HIGH Z
HIGH Z
Output Valid
Outputs
RESET#
RY/BY#
0V
Figure 13.
32
Read Operations Timings
Am29LV033C
AC CHARACTERISTICS
Hardware Reset (RESET#)
Parameter
JEDEC
Std
Description
Test Setup
All Speed Options
Unit
tREADY
RESET# Pin Low (During Embedded Algorithms)
to Read or Write (See Note)
Max
20
µs
tREADY
RESET# Pin Low (NOT During Embedded
Algorithms) to Read or Write (See Note)
Max
500
ns
tRP
RESET# Pulse Width
Min
500
ns
tRH
RESET# High Time Before Read (See Note)
Min
50
ns
tRPD
RESET# Low to Standby Mode
Min
20
µs
tRB
RY/BY# Recovery Time
Min
0
ns
Note: Not 100% tested.
RY/BY#
CE#, OE#
tRH
RESET#
tRP
tReady
Reset Timings NOT during Embedded Algorithms
Reset Timings during Embedded Algorithms
tReady
RY/BY#
tRB
CE#, OE#
RESET#
tRP
Figure 14.
RESET# Timings
Am29LV033C
33
AC CHARACTERISTICS
Erase/Program Operations
Parameter
Speed Option
JEDEC
Std
Description
tAVAV
tWC
Write Cycle Time (Note 1)
Min
tAVWL
tAS
Address Setup Time
Min
tWLAX
tAH
Address Hold Time
Min
45
45
50
ns
tDVWH
tDS
Data Setup Time
Min
35
45
50
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time (Note 1)
Min
0
ns
tGHWL
tGHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tELWL
tCS
CE# Setup Time
Min
0
ns
tWHEH
tCH
CE# Hold Time
Min
0
ns
tWLWH
tWP
Write Pulse Width
Min
tWHWL
tWPH
Write Pulse Width High
Min
30
ns
tWHWH1
tWHWH1
Programming Operation (Note 2)
Typ
9
µs
tWHWH1
tWHWH1
Accelerated Programming Operation (Note 2)
Typ
7
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.7
sec
tVCS
VCC Setup Time (Note 1)
Min
50
µs
tRB
Recovery Time from RY/BY#
Min
0
ns
Program/Erase Valid to RY/BY# Delay
Min
90
ns
tBUSY
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
34
Am29LV033C
-70
-90
-120
Unit
70
90
120
ns
0
30
45
ns
50
ns
AC CHARACTERISTICS
Program Command Sequence (last two cycles)
tAS
tWC
Addresses
XXXh
Read Status Data (last two cycles)
PA
PA
PA
tAH
CE#
tCH
OE#
tWHWH1
tWP
WE#
tWPH
tCS
tDS
tDH
PD
A0h
Data
Status
tBUSY
DOUT
tRB
RY/BY#
tVCS
VCC
Note: PA = program address, PD = program data, DOUT is the true data at the program address.
Figure 15.
Program Operation Timings
VHH
ACC
VIL or VIH
VIL or VIH
tVHH
tVHH
Figure 16.
Accelerated Program Timing Diagram
Am29LV033C
35
AC CHARACTERISTICS
Erase Command Sequence (last two cycles)
tAS
tWC
Addresses
XXXh
Read Status Data
VA
SA
VA
XXXh for chip erase
tAH
CE#
tCH
OE#
tWP
WE#
tWPH
tCS
tWHWH2
tDS
tDH
Data
55h
In
Progress
30h
Complete
10 for Chip Erase
tBUSY
tRB
RY/BY#
tVCS
VCC
Note: SA = sector address (for Sector Erase), VA = Valid Address for reading status data (see “Write Operation Status”).
Figure 17. Chip/Sector Erase Operation Timings
36
Am29LV033C
AC CHARACTERISTICS
tRC
Addresses
VA
VA
VA
tACC
tCE
CE#
tCH
tOE
OE#
tOEH
tDF
WE#
tOH
High Z
DQ7
Complement
Complement
DQ0–DQ6
Status Data
Status Data
Valid Data
True
High Z
Valid Data
True
tBUSY
RY/BY#
Note: VA = Valid address. Figure shows are first status cycle after command sequence, last status read cycle, and array data
read cycle.
Figure 18.
Data# Polling Timings (During Embedded Algorithms)
tRC
Addresses
VA
VA
VA
VA
tACC
tCE
CE#
tCH
tOE
OE#
tOEH
tDF
WE#
tOH
High Z
DQ6/DQ2
tBUSY
Valid Status
Valid Status
(first read)
(second read)
Valid Status
Valid Data
(stops toggling)
RY/BY#
Note: VA = Valid address; not required for DQ6. Figure shows first two status cycle after command sequence, last status read cycle, and
array data read cycle.
Figure 19.
Enter
Embedded
Erasing
WE#
Erase
Suspend
Erase
Toggle Bit Timings (During Embedded Algorithms)
Enter Erase
Suspend Program
Erase
Suspend
Program
Erase Suspend
Read
Erase
Resume
Erase Suspend
Read
Erase
Erase
Complete
DQ6
DQ2
Note: The system can use OE# or CE# to toggle DQ2/DQ6. DQ2 toggles only when read at an address within an erase-suspended
sector.
Figure 20.
DQ2 vs. DQ6
Am29LV033C
37
AC CHARACTERISTICS
Temporary Sector/Sector Block Unprotect
Parameter
JEDEC
Std
Description
tVIDR
VID Rise and Fall Time (See Note)
tRSP
RESET# Setup Time for Temporary
Sector/Sector Block Unprotect
All Speed Options
Unit
Min
500
ns
Min
4
µs
Note: Not 100% tested.
12 V
RESET#
0 or 3 V
tVIDR
tVIDR
Program or Erase Command Sequence
CE#
WE#
tRSP
RY/BY#
Figure 21.
38
Temporary Sector/Sector Block Unprotect Timing Diagram
Am29LV033C
VID
VIH
RESET#
SA, A6,
A1, A0
Valid*
Valid*
Sector/Sector Block Protect or Unprotect
Data
60h
60h
Valid*
Verify
40h
Status
Sector/Sector Block Protect: 150 µs,
Sector/Sector Block Unprotect: 15 ms
1 µs
CE#
WE#
OE#
Note: For sector protect, A6 = 0, A1 = 1, A0 = 0. For sector unprotect, A6 = 1, A1 = 1, A0 = 0.
Figure 22.
Sector Protect/Unprotect
Timing Diagram
Am29LV033C
39
AC CHARACTERISTICS
Alternate CE# Controlled Erase/Program Operations
Parameter
Speed Option
JEDEC
Std
Description
tAVAV
tWC
Write Cycle Time (Note 1)
Min
tAVEL
tAS
Address Setup Time
Min
tELAX
tAH
Address Hold Time
Min
45
45
50
ns
tDVEH
tDS
Data Setup Time
Min
35
45
50
ns
tEHDX
tDH
Data Hold Time
Min
0
ns
tOES
Output Enable Setup Time
Min
0
ns
tGHEL
tGHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
tWLEL
tWS
WE# Setup Time
Min
0
ns
tEHWH
tWH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE# Pulse Width
Min
tEHEL
tCPH
CE# Pulse Width High
Min
30
ns
tWHWH1
tWHWH1
Programming Operation (Note 2)
Typ
9
µs
tWHWH2
tWHWH2
Sector Erase Operation (Note 2)
Typ
0.7
sec
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
40
Am29LV033C
-70
-90
-120
Unit
70
90
120
ns
0
30
45
ns
50
ns
AC CHARACTERISTICS
XXX for program
XXX for erase
PA for program
SA for sector erase
XXX for chip erase
Data# Polling
Addresses
PA
tWC
tAS
tAH
tWH
WE#
tGHEL
OE#
tCP
CE#
tWS
tWHWH1 or 2
tCPH
tBUSY
tDS
tDH
DQ7#
Data
tRH
A0 for program
55 for erase
DOUT
PD for program
30 for sector erase
10 for chip erase
RESET#
RY/BY#
Notes:
1. PA = Program Address, PD = Program Data, DOUT = Data Out, DQ7# = complement of data written to device.
2. Figure indicates the last two bus cycles of the command sequence.
Figure 23.
Alternate CE# Controlled Write Operation Timings
Am29LV033C
41
ERASE AND PROGRAMMING PERFORMANCE
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Sector Erase Time
0.7
15
s
Chip Erase Time
45
Byte Programming Time
9
300
µs
Accelerated Byte Program Time
7
210
µs
Chip Programming Time (Note 3)
36
108
s
s
Comments
Excludes 00h programming
prior to erasure (Note 4)
Excludes system level
overhead (Note 5)
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V VCC, 1,000,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, VCC = 2.7 V, 1,000,000 cycles.
3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes
program faster than the maximum program times listed.
4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.
5. System-level overhead is the time required to execute the four- or two-bus-cycle sequence for the program command. See Table 9
for further information on command definitions.
6. The device has a guaranteed minimum erase and program cycle endurance of 1,000,000 cycles.
LATCHUP CHARACTERISTICS
Description
Min
Max
Input voltage with respect to VSS on all pins except I/O pins
(including A9, OE#, and RESET#)
–1.0 V
12.5 V
Input voltage with respect to VSS on all I/O pins
–1.0 V
VCC + 1.0 V
–100 mA
+100 mA
VCC Current
Includes all pins except VCC. Test conditions: VCC = 3.0 V, one pin at a time.
TSOP PIN CAPACITANCE
Parameter
Symbol
Parameter Description
Test Setup
Typ
Max
Unit
CIN
Input Capacitance
VIN = 0
6
7.5
pF
COUT
Output Capacitance
VOUT = 0
8.5
12
pF
CIN2
Control Pin Capacitance
VIN = 0
7.5
9
pF
Notes:
1. Sampled, not 100% tested.
2. Test conditions TA = 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter
Test Conditions
Min
Unit
150°C
10
Years
125°C
20
Years
Minimum Pattern Data Retention Time
42
Am29LV033C
PHYSICAL DIMENSIONS*
TS 040—40-Pin Standard TSOP
Dwg rev AA; 10/99
* For reference only. BSC is an ANSI standard for Basic Space Centering.
Am29LV033C
43
PHYSICAL DIMENSIONS
TSR040—40-Pin Reverse TSOP
Dwg rev AA; 10/99
* For reference only. BSC is an ANSI standard for Basic Space Centering.
Am29LV033C
44
PHYSICAL DIMENSIONS
FBD063—63-Ball Fine-Pitch Ball Grid Array (FBGA) 8 x 14 mm
Dwg rev AF; 10/99
45
Am29LV033C
REVISION SUMMARY
Revision A+1 (January 1999)
Revision A+7 (August 2, 1999)
Device Bus Operations
Block Diagram
Sector/Sector Block Addresses for Protection/Unprotection Table: Corrected the address bits and values in
the middle column of the table.
Added ACC signal to drawing.
Autoselect Codes (High Voltage Method Table:
Changed the device ID to A3h.
Clarified how to permanently set ACC.
Revision A+2 (January 1999)
Deleted WP# designation from ACC signal.
Command Definitions
Revision A+8 (August 18, 1999)
Command Definition Table: Changed the device ID to
A3h.
Ordering Information, Physical Dimensions
Accelerated Program Operations
Accelerated Program Timing Diagram
Corrected FBGA package dimensions to 8 x 14 mm.
Revision A+3 (March 17, 1999)
Revision A+9 (August 31, 1999)
Connection Diagrams
Modified FBGA drawing to show how outrigger balls
are shorted.
Ordering Information
Speed Option: Changed 70R to 70.
Revision A+4 (May 17, 1999)
Revision B (January 3, 2000)
Global
AC Characteristics—Figure 15. Program
Operations Timing and Figure 17. Chip/Sector
Erase Operations
Deleted references to WP#. The device does not offer
this function.
Deleted tGHWL and changed OE# waveform to start at
high.
Table 4. Sector Block Addresses for
Protection/Unprotection
Deleted “Top Boot Sector/” from table title.
Physical Dimensions
Revision A+5 (June 7, 1999)
Replaced figures with more detailed illustrations.
Revision B+1 (February 21, 2000)
Global
The 70 ns speed option now operates over the full
2.7–3.6 V VCC range.
Common Flash Memory Interface
Global
Changed data sheet status to “Preliminary” from “Advance Information. Added dash to speed options.
Corrected data for the following addresses: 27h, 2Dh,
37h, 48h, and 49h. Modified the description for 48h
and 49h.
Ordering Information
Revision A+6 (June 25, 1999)
Revision B+2 (November 7, 2000)
Command Definitions Table
Global
Indicated that address bit A21 must be specified in the
third cycle when entering the autoselect mode.
Added Table of Contents. Deleted burn-in option. Deleted Preliminary status from data sheet.
Added dash to OPN.
Am29LV033C
46
Trademarks
Copyright © 2000 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
47
Am29LV033C