Plastic-Encapsulate Diodes SCHOTTKY BARRIER DIODE B5817WS/B5818WS/B5819WS FEATURES or use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING B5817WS: SJ + - B5818WS:SK B5819WS: SL SOD-323 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 Paramete r Symbol VRM Peak repetitive Peak reverse voltage VRRM Working Peak Reverse Voltage DC Blocking Voltage VRWM RMS Reverse Voltage VR(RMS) B5818WS B5819WS Unit 20 30 40 V 20 30 40 V 14 21 28 V ht t mi Li ., Co / r hk to i. uc em nd os co 3 mi 87 ak Se 78- w.m KO -3 ww MA 08 :// 40 tp Non-Repetitive Peak reverse voltage B5817WS VR IO 1 A IFSM 9 A Repetitive Peak Forward Current IFR 1.5 A Power Dissipation M Pd 250 mW RθJA 500 TSTG -65~+150 Average Rectified Output Current Peak forward surge current @=8.3ms ThermalResistanc Junction to Ambient Storage temperature Parameter Reverse breakdown voltage Reverse voltage leakage current Symbol V(BR) IR unless otherwise specified) ed ELECTRICAL CHARACTERISTICS (Tamb=25 Test conditions IR= 1mA B5817WS B5818WS B5819WS VR=20V VR=30V VR=40V B5817WS B5818WS B5819WS B5817WS Forward voltage VF B5818WS B5819WS Diode capacitance C /W Min Max 20 30 40 V 1 IF=1A IF=3A 0.45 IF=1A IF=3A 0.55 IF=1A IF=3A VR=4V, f=1MHz Unit 0.75 0.875 mA V V 0.6 0.9 120 V pF D MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/ Page:P2-P1 Plastic-Encapsulate Diodes B5817WS/B5818WS/B5819WS Typical Characteristics t mi Li ., Co / r hk to i. uc em nd os co 3 mi 87 ak Se 78- w.m KO -3 ww MA 08 :// 40 tp ht ed MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/ Page:P2-P2