MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™CE 500VCoolMOS™CEPowerTransistor IPx50R380CE DataSheet Rev.2.1 Final PowerManagement&Multimarket 500VCoolMOS™CEPowerTransistor IPP50R380CE 1Description TO-220 tab CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEseriescombinesthe experienceoftheleadingSJMOSFETsupplierwithhighclassinnovation whilerepresentingacostappealingalternativecomparedtostandard MOSFETsintargetapplications.Theresultingdevicesprovideallbenefits ofafastswitchingSJMOSFETwhilenotsacrificingeaseofuse. Extremelylowswitchingandconductionlossesmakeswitching applicationsevenmoreefficient,morecompact,lighterandcooler. Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) Drain Pin 2 Gate Pin 1 Source Pin 3 Applications PFCstages,hardswitchingPWMstagesandresonantswitchingPWM stagesfore.g.PCSilverbox,LCD&PDPTVandLighting. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 550 V RDS(on),max 0.38 Ω Qg.typ 24.8 nC ID,pulse 32.4 A Eoss@400V 2.54 µJ Body diode di/dt 500 A/µs Type/OrderingCode Package Marking IPP50R380CE PG-TO 220 5R380CE Final Data Sheet 2 RelatedLinks see Appendix A Rev.2.1,2014-06-06 500VCoolMOS™CEPowerTransistor IPP50R380CE TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Final Data Sheet 3 Rev.2.1,2014-06-06 500VCoolMOS™CEPowerTransistor IPP50R380CE 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 9.9 6.3 A TC = 25°C TC = 100°C - 32.4 A TC=25°C - - 173 mJ ID =4A; VDD = 50V EAR - - 0.26 mJ ID =4A; VDD = 50V Avalanche current, repetitive IAR - - 4.0 A - MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...400V Gate source voltage VGS -20 -30 - 20 30 V static; AC (f>1 Hz) Power dissipation (non FullPAK) TO-220 Ptot - - 73 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 150 °C - - - 60 Ncm M3 and M3.5 screws IS - - 8.6 A TC=25°C Diode pulse current IS,pulse - - 32.4 A TC = 25°C Reverse diode dv/dt3) dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°C, tcond<2µs Maximum diode commutation speed3) dif/dt - - 500 A/µs VDS=0...400V,ISD<=IS,Tj=25°C, tcond<2µs Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse EAS Avalanche energy, repetitive Mounting torque (non FullPAK) TO-220 Continuous diode forward current 2) 3Thermalcharacteristics Table3Thermalcharacteristics(nonFullPAK)TO-220 Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - - 1.71 °C/W - Thermal resistance, junction - ambient RthJA - - 62 °C/W leaded Soldering temperature, wavesoldering only allowed at leads - - 260 °C Tsold 1.6mm (0.063 in.) from case for 10s 1) Limited by Tj max. Maximum duty cycle D=0.75 Pulse width tp limited by Tj,max 3) VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG 2) Final Data Sheet 4 Rev.2.1,2014-06-06 500VCoolMOS™CEPowerTransistor IPP50R380CE 4Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3 3.50 V VDS=VGS,ID=0.26mA - 10 1 - µA VDS=500V,VGS=0V,Tj=25°C VDS=500V,VGS=0V,Tj=150°C IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.35 0.90 0.38 - Ω VGS=13V,ID=3.2A,Tj=25°C VGS=13V,ID=3.2A,Tj=150°C Gate resistance RG - 3 - Ω f=1MHz,opendrain Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 500 - Gate threshold voltage V(GS)th 2.50 Zero gate voltage drain current IDSS Gate-source leakage curent Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 584 - pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 40 - pF VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related1) Co(er) - 32 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related2) Co(tr) - 133 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 7.2 - ns VDD=400V,VGS=13V,ID=3.9A, RG=3.4Ω Rise time tr - 5.6 - ns VDD=400V,VGS=13V,ID=3.9A, RG=3.4Ω Turn-off delay time td(off) - 35 - ns VDD=400V,VGS=13V,ID=3.9A, RG=3.4Ω Fall time tf - 8.6 - ns VDD=400V,VGS=13V,ID=3.9A, RG=3.4Ω Unit Note/TestCondition Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 3.1 - nC VDD=400V,ID=3.9A,VGS=0to10V Gate to drain charge Qgd - 13.1 - nC VDD=400V,ID=3.9A,VGS=0to10V Gate charge total Qg - 24.8 - nC VDD=400V,ID=3.9A,VGS=0to10V Gate plateau voltage Vplateau - 5.3 - V VDD=400V,ID=3.9A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%V(BR)DSS Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to80%V(BR)DSS 2) Final Data Sheet 5 Rev.2.1,2014-06-06 500VCoolMOS™CEPowerTransistor IPP50R380CE Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=3.9A,Tf=25°C 207 - ns VR=400V,IF=3.9A,diF/dt=100A/µs - 1.7 - µC VR=400V,IF=3.9A,diF/dt=100A/µs - 15.5 - A VR=400V,IF=3.9A,diF/dt=100A/µs Min. Typ. Max. VSD - 0.85 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 6 Rev.2.1,2014-06-06 500VCoolMOS™CEPowerTransistor IPP50R380CE 5Electricalcharacteristicsdiagrams Powerdissipation(NonFullPAK) Max.transientthermalimpedance(NonFullPAK) 101 90 80 70 100 ZthJC[K/W] Ptot[W] 60 50 40 0.2 0.1 0.05 0.02 10-1 30 0.5 0.01 single pulse 20 10 0 0 40 80 120 10-2 160 10-5 10-4 10-3 TC[°C] 10-2 10-1 tp[s] Ptot=f(TC) ZthJC=f(tP);parameter:D=tp/T Safeoperatingarea(NonFullPAK)Tj=25°C Safeoperatingarea(NonFullPAK)Tj=80°C 2 102 10 1 µs 101 1 µs 101 10 µs 10 µs ID[A] ID[A] 100 µs 1 ms 0 10 10 ms 100 µs 1 ms 100 10 ms DC 10-1 10-2 10-1 100 101 102 103 10-2 DC 100 101 102 VDS[V] VDS[V] ID=f(VDS);TC=25°C;D=0;parameter:tp ID=f(VDS);TC=80°C;D=0;parameter:tp Final Data Sheet 7 103 Rev.2.1,2014-06-06 500VCoolMOS™CEPowerTransistor IPP50R380CE Typ.outputcharacteristicsTj=25°C Typ.outputcharacteristicsTj=125°C 40 25 35 20 V 30 10 V 20 V 10 V 20 15 20 7V 10 15 10 6V 5.5 V 6V 5 5.5 V 5 0 7V ID[A] ID[A] 8V 8V 25 5V 4.5 V 5V 4.5 V 0 5 10 15 0 20 0 5 10 VDS[V] 15 20 VDS[V] ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS Typ.drain-sourceon-stateresistance Drain-sourceon-stateresistance 1.4 1.2 1.0 1.2 5.5 V 7V 0.8 6V 98% RDS(on)[Ω] RDS(on)[Ω] 5V 6.5 V 1.0 0.6 typ 0.4 10 V 0.8 0.2 0.6 0 5 10 15 20 0.0 -60 -40 -20 0 20 40 ID[A] RDS(on)=f(ID);Tj=125°C;parameter:VGS Final Data Sheet 60 80 100 120 140 160 180 Tj[°C] RDS(on)=f(Tj);ID=3.2A;VGS=13V 8 Rev.2.1,2014-06-06 500VCoolMOS™CEPowerTransistor IPP50R380CE Typ.transfercharacteristics Typ.gatecharge 35 10 25 °C 9 30 8 25 120 V 7 400 V 6 VGS[V] ID[A] 20 150 °C 15 5 4 3 10 2 5 1 0 0 2 4 6 8 0 10 0 10 VGS[V] 20 30 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=3.9Apulsed;parameter:VDD Avalancheenergy Drain-sourcebreakdownvoltage 200 580 180 560 160 540 140 VBR(DSS)[V] EAS[mJ] 120 100 80 60 520 500 480 40 460 20 0 0 25 50 75 100 125 150 175 440 -60 -20 Tj[°C] 60 100 140 180 Tj[°C] EAS=f(Tj);ID=4A;VDD=50V Final Data Sheet 20 VBR(DSS)=f(Tj);ID=1mA 9 Rev.2.1,2014-06-06 500VCoolMOS™CEPowerTransistor IPP50R380CE Typ.capacitances Typ.Cossstoredenergy 104 4.0 3.5 103 3.0 Ciss Eoss[µJ] C[pF] 2.5 102 Coss 2.0 1.5 101 1.0 Crss 0.5 100 0 100 200 300 400 500 0.0 0 VDS[V] 100 200 300 400 500 VDS[V] C=f(VDS);VGS=0V;f=1MHz Eoss=f(VDS) Forwardcharacteristicsofreversediode 102 101 IF[A] 125 °C 25 °C 100 10-1 0.4 0.6 0.8 1.0 1.2 1.4 VSD[V] IF=f(VSD);parameter:Tj Final Data Sheet 10 Rev.2.1,2014-06-06 500VCoolMOS™CEPowerTransistor IPP50R380CE 6TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform V ,I Rg1 VDS( peak) VDS VDS VDS trr IF Rg 2 tF tS dIF / dt QF IF t dIrr / dt trr =tF +tS Qrr = QF + QS Irrm Rg1 = Rg 2 IF 10 %Irrm QS Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 11 ID VDS Rev.2.1,2014-06-06 500VCoolMOS™CEPowerTransistor IPP50R380CE 7PackageOutlines Figure1OutlinePG-TO220,dimensionsinmm/inches Final Data Sheet 12 Rev.2.1,2014-06-06 500VCoolMOS™CEPowerTransistor IPP50R380CE 8AppendixA Table11RelatedLinks • IFXCoolMOSWebpage:www.infineon.com • IFXDesigntools:www.infineon.com Final Data Sheet 13 Rev.2.1,2014-06-06 500VCoolMOS™CEPowerTransistor IPP50R380CE RevisionHistory IPP50R380CE Revision:2014-06-06,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2012-08-24 Release of final version 2.1 2014-06-06 Removal of TO-220FP WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 14 Rev.2.1,2014-06-06