Diode Semiconductor Korea High conductance low leakage diode MMBD1501A/1503A/ 1504A/1505A FEATURES z Pb Two element incorporated Lead-free into one package. (Emitter-coupled transistors) z MMBD1501A MMBD1503A Reduction of the mounting area and assembly cost by one half. APPLICATIONS z MMBD1504A MMBD1505A For general application. SOT-23 ORDERING INFORMATION Type No. Marking MMBD1501A MMBD1503A MMBD1504A MMBD1505A A11 A13 A14 A15 Package Code SOT-23 SOT-23 SOT-23 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Unit Reverse Voltage VR 200 V Average rectified current VF(AV) 200 mA Forward Continuous Current IFM 600 mA IFSM 1.0 2.0 A Power Dissipation Pd 350 mW Thermal resistance,Junction to ambient RθJA 357 ℃/W Storage temperature TSTG -55-150 ℃ Peak forward current (1.0s) (1.0m) www.diode.kr Diode Semiconductor Korea High conductance low leakage diode MMBD1501A/1503A/ 1504A/1505A ELECTRICAL CHARACTERISTICS @ Ta=25℃ Parameter Symbol Min. Reverse Breakdown Voltage V(BR)R1 200 Forward voltage Reverse current Diode Capacitance VF IR CD unless otherwise specified Max. Unit Test Conditions V IR=5μA 0.62 0.72 IF=1mA 0.72 0.83 IF=10mA 0.8 0.89 0.83 0.93 0.87 1.1 IF=200mA 0.9 1.15 IF=300mA 1.0 10 4 V nA pF IF=50mA IF=100mA VR=125V VR=180V VR=0V,f=1MHz TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.diode.kr Diode Semiconductor Korea High conductance low leakage diode MMBD1501A/1503A/ 1504A/1505A www.diode.kr Diode Semiconductor Korea High conductance low leakage diode MMBD1501A/1503A/ 1504A/1505A PACKAGE OUTLINE Plastic surface mounted package SOT-23 SOT-23 Dim Min Max A 2.85 2.95 B 1.25 1.35 C 1.0Typical D 0.37 0.43 E 0.35 0.48 G 1.85 1.95 H 0.02 0.1 J K 0.1Typical 2.35 2.45 All Dimensions in mm SOLDERING FOOTPRINT Unit : mm PACKAGE INFORMATION Device Package Shipping MMBD1501A/1503A/1504A/1505A SOT-23 3000/Tape&Reel www.diode.kr