CCD Area Image Sensor MN39260FH 4.5 mm (type-1/4) 810k-pixel CCD Area Image Sensor ■ Overview ■ Pin Assignments The MN39260FH is a 4.5 mm (type-1/4) interline transfer CCD (IT-CCD) solid state image sensor device. This device uses photodiodes in the optoelectric conversion section and CCDs for signal readout. The electronic shutter function has made an exposure time of 1/10 000 seconds possible. Further, this device has the features of high sensitivity, low noise, broad dynamic range, and low smear. This device has a total of 802 579 pixels (1 007 horizontal × 797 vertical) and provides stable and clear images with a resolution of 600 horizontal TV-lines and 420 vertical TV-lines. Part Number Size MN39260FH 4.5 mm (type-1/4) φV4 1 14 PT φV3 2 13 Sub φV2 3 12 φH2 φV1 4 11 φH1 GND 5 10 φR TEST 6 9 GND VDD 7 8 VO System Color or B/W PAL Color (Top View) ■ Features • Effective pixel number 962 (horizontal) × 774 (vertical) • High sensitivity • Broad dynamic range • Low smear • Electronic shutter ■ Applications • Camcorders • FA, OA cameras Publication date: September 2001 SMD00004BEC 1 MN39260FH ■ Block Diagram (4 columns OB + 962 columns valid area + 41 columns OB) 1 φV4 2 φ V3 3 φ 8 VO 7 VDD 9 GND (2 dummies + OB11 + valid area 774 + OB12 ) Output section 13 4 Vertical shift register Sub Photo diode V2 φV1 5 GND 6 TEST *1 14 PT 12 φH2 11 φH1 φR 10 Horizontal register (one dummy at the front, no dummy at the back) *1 : TEST pin must be left open, because the pin outputs CCD internal bias voltage. ■ Pin Descriptions Pin No. Symbol 1 φV4 2 3 Description Pin No. Symbol Description Vertical shift register clock pulse 4 8 VO φV3 Vertical shift register clock pulse 3 9 GND φV2 Vertical shift register clock pulse 2 10 φR Reset pulse (RG) Vertical shift register clock pulse 1 11 φH1 Horizontal register clock pulse 1 GND 12 φH2 Horizontal register clock pulse 2 13 Sub Substrate 14 PT P-well for protection circuit 4 φV1 5 GND 6 TEST 7 VDD TEST pin (OPEN) *1 Power supply Video output GND Note) *1: TEST pin must be left open, because the pin outputs CCD internal bias voltage. ■ Device Parameter (H × V) Parameter Value Unit *1 962 × 774 pixel Image sensing block dimension 3.703 7 × 2.709 0 mm2 3.85 × 3.50 µm2 Pixel number Pixel dimension Note) *1: OB columns are not included. 2 SMD00004BEC MN39260FH ■ Absolute Maximum Ratings and Operating Conditions Absolute maximum rating Parameter Lower limit VDD VPT *3, 4 GND Upper limit High-Low VφH2 VSub Max Unit 18 14.5 15.0 15.5 V 0.2 −7.5 −7.0 −6.5 V 0 V 3.0 3.3 3.6 V 8 (Supplied internally) V High 8 3.0 3.3 3.6 V Low − 0.2 − 0.2 0 0.2 V High 8 3.0 3.3 3.6 V Low − 0.2 − 0.2 0 0.2 V *2 φVSub Typ − 0.2 Bias VφH1 Min −10.0 (Reference voltage) VφR Operating condition (Supplied internally) V − 0.2 35 21.0 22.0 23.0 V High 18 14.5 15.0 15.5 V Middle − 0.05 0 0.05 V Low −9 −7.5 −7.0 −6.5 V Middle 15 − 0.05 0 0.05 V Low −9 −7.5 −7.0 −6.5 V High 18 14.5 15.0 15.5 V Middle − 0.05 0 0.05 V Low −9 −7.5 −7.0 −6.5 V Middle 15 − 0.05 0 0.05 V Low −9 −7.5 −7.0 −6.5 V Operating temperature −10 60 25 °C Storage temperature −30 80 °C VφV1 *1 *3, 4 VφV2 *3, 4 VφV3 *3, 4 VφV4 *3, 4 SMD00004BEC 3 MN39260FH ■ Absolute Maximum Ratings and Operating Conditions (continued) Note) 1. Standard photo detecting condition Standard photo detecting condition stands for detecting image with a light source of color temperature of 2 856K, luminance of 1 050 cd/m2, and using a color temperature conversion filter LB-40 (HOYA), infrared cut filter CAW-500S with thickness 2.5 mm for a light path and with F8 lens aperture. The quantity of the incidental light to a photo-detecting surface under the above condition is defined as the standard quantity of light. 2. *1: VSub when using electronic shutter function φVSub H φVSub (V) φVSub L VSub (V) (Supplied internally) GND * φSub pulse generates once every 1 V period. *2: VSub supplied internally is the voltage suppressing the blooming generation at ×500 light quantity relative to the standard light quantity. *3: Relation between VPT and VφVL Set VPT under the following condition against VL of a vertical transfer clock waveform. VPT ≤ VL (VφV1L to VφV4L) − 0.2 < VφV − VPT < 24.5 (V) *4: Absolute maximum ratings ■ Optical Characteristics Parameter Symbol Carrier saturation output Sc Sensitivity Vertical smear Conditions Min Typ Max Unit J chart 500 mV So J chart F1.4, 1/32 ND 80 110 mV Sm 1/10 V chart, F1.4 0.01 % Note) The above-mentioned characteristics are the values on driving the device for the imaging stabilizer mode (1/60 seconds accumulation). 4 SMD00004BEC MN39260FH ■ Timing Diagram • High speed pulse timing φH1 50% 50% 50% 27.8 ns ± 3 ns CCD output φR 50% 50% 1 ns ± 3 ns Clamp pulse (DS1) 10 ns ∼ 13.9 ns 50% 50% 3 ns ± 3 ns Sampling pulse (DS2) 50% 4 ns ± 3 ns SMD00004BEC 13.9 ns ± 3 ns 50% 13.9 ns ± 3 ns 5 MN39260FH ■ Timing Diagram (continued) • Rise time and fall time of each pulse φV1 , φV3 0.9 0.9 0.1 0.1 0.9 0.9 0.1 0.1 ≤300 ns ≤300 ns φV2 , φV4 ≤300 ns 0.9 0.9 0.1 0.1 ≤300 ns φH1 , φH2 0.9 0.1 0.1 ≤8 ns 6 ≤300 ns φR 0.9 ≤300 ns 0.9 0.9 0.1 0.1 ≤8 ns ≤6 ns SMD00004BEC ≤6 ns MN39260FH ■ Color Filter Arrays on CCD 774 Cy Ye Cy Ye Cy Ye Cy Ye Cy Ye 773 Mg G Mg G Mg G Mg G Mg G 8 Cy Ye Cy Ye Cy Ye Cy Ye Cy Ye 7 G Mg G Mg G Mg G Mg G Mg 6 Cy Ye Cy Ye Cy Ye Cy Ye Cy Ye 5 Mg G Mg G Mg G Mg G Mg G 4 Cy Ye Cy Ye Cy Ye Cy Ye Cy Ye 3 G Mg G Mg G Mg G Mg G Mg 2 Cy Ye Cy Ye Cy Ye Cy Ye Cy Ye 1 Mg G Mg G Mg G Mg G Mg G 1 2 3 4 5 6 7 8 961 962 ■ Graph of Characteristics CCD color filter spectral characteristics 1.2 Ye 1.0 Relative sensitivity 0.8 0.6 Gr Cy 0.4 Mg 0.2 0 400 450 500 550 600 650 700 750 800 Wavelength (nm) SMD00004BEC 7 MN39260FH ■ Package Dimensions (unit: mm) • WDIP014-P-0400H 10.00±0.08 9.00±0.10 5.00±0.08 Reference plane 8 1.27 (1.19) 0.30±0.05 (2.50) 2-R0.40 (depth 0.30) 14 8 10.16±0.25 0.3 M 7 (2.50) 1 1.30±0.10 3.50±0.20 (0.60) 0.25±0.05 (0.7) 7 (1.30) 1 3.3±0.15 Valid pixel center 0.015 5.00±0.08 9.00±0.10 10.00±0.08 14 8 1. The center of the package is equal to the center of the effective pixel area. 2. The rotation angle of the effective pixel area: up to ±1.0 degree 3. The distance from the bottom face of the package to the surface of the effective pixel area: 1.41 mm ± 0.1 mm 4. The tilt of the effective pixel area for the bottom face of the package: up to 25 µm 5. Thickness of seal glass is 0.7 mm ± 0.1 mm, and the refractive index is 1.50. 6. Package weight: 0.55 g (typ.) SMD00004BEC Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL