Transistors SMD Type NPN Transistors BCW66 (KCW66) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 ■ Features ● Complementary to BCW68 1 0.55 and H according to DC current gain +0.1 1.3 -0.1 +0.1 2.4 -0.1 ● BCW66 is subdivided into three groups F,G 0.4 3 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 0.97 +0.1 -0.1 +0.05 0.1 -0.01 1.Base 0-0.1 +0.1 0.38 -0.1 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO 75 Collector - Emitter Voltage VCEO 45 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 800 mA Collector Power Dissipation PC 200 mW Junction Temperature TJ 150 Tstg -55 to 150 Storage Temperature Range Unit V ℃ www.kexin.com.cn 1 Transistors SMD Type NPN Transistors BCW66 (KCW66) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Typ Max Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 75 Collector- emitter breakdown voltage VCEO Ic= 10 mA， IB= 0 45 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 5 Collector-base cut-off current ICBO VCB= 45 V , IE= 0 20 Emitter cut-off current IEBO VEB= 4V , IC=0 20 IC=100 mA, IB=10mA 0.3 IC= 500 mA, IB= 50mA 0.7 IC= 500 mA, IB= 50mA 2 Collector-emitter saturation voltage (Note.1) VCE(sat) Base - emitter saturation voltage (Note.1) VBE(sat) VCE= 10V, IC= 100uA hFE(1) VCE= 1V, IC= 10mA hFE(2) DC current gain VCE= 1V, IC= 100mA hFE(3) VCE= 2V, IC= 500mA hFE(4) F 35 G 50 H 80 F 75 G 110 H 180 F 100 250 G 160 400 H 250 630 F 35 G 60 H 100 Cob VCB= 10V, IE= 0,f=1MHz 12 Collector input capacitance Cib VEB= 0.5V, IC= 0,f=1MHz 80 Noise figure NF VCE= 5V, IC= 0.2mA RS=1KΩ,BW=200Hz 10 Transition frequency fT VCE= 10V, IC= 20mA,f=100MHz Type BCW66F BCW66G BCW66H Range 100-250 160-400 250-630 Marking EF EG EH www.kexin.com.cn 100 Unit V Collector output capacitance ■ Classification of hfe(3) 2 Min nA V pF dB MHz Transistors SMD Type NPN Transistors BCW66 (KCW66) ■ Typical Characterisitics Static Characteristic 250 VCE= 1V COMMON EMITTER Ta=25℃ 720uA 640uA 800uA hFE 560uA 480uA 200 hFE —— IC 500 DC CURRENT GAIN COLLECTOR CURRENT IC (mA) 300 400uA 150 320uA 240uA 100 160uA o Ta=100 C 400 300 o Ta=25 C 200 100 50 IB=80uA 0 0 1 2 3 4 5 6 COLLECTOR-EMITTER VOLTAGE VCE 7 VBEsat —— IC 1.2 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 1.0 0.8 Ta=25℃ 0.6 0.4 1 Ta=100℃ 10 COLLECTOR CURRENT VCEsat —— 400 β=10 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) 0 0.1 8 (V) IC 100 800 (mA) IC β=10 300 200 Ta=100℃ 100 0.2 Ta=25℃ 0.0 0.1 1 10 100 COLLECTOR CURRENT fT —— 1 10 100 Cob / Cib —— 800 100 COLLECTOR CURRENT IC IC (mA) VCB / VEB 180 f=1MHz IE=0 / IC=0 160 Ta=25 C (pF) o C 140 120 100 80 60 Cib 10 Cob 40 VCE=10V 20 0 o Ta=25 C 1 10 100 COLLECTOR CURRENT Pc 0.3 COLLECTOR POWER DISSIPATION Pc (W) 800 (mA) CAPACITANCE TRANSITION FREQUENCY fT (MHz) 200 IC 0 0.1 —— IC (mA) 1 0.1 1 REVERSE VOLTAGE V (V) 10 20 Ta 0.2 0.1 0.0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃) www.kexin.com.cn 3