BC489, BC489A High Current Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO 80 Vdc Collector −Base Voltage VCBO 80 Vdc Collector −Emitter Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 0.5 Adc Total Power Dissipation @ TA = 25°C Derate above TA = 25°C PD 625 5.0 mW mW/°C Total Power Dissipation @ TA = 25°C Derate above TA = 25°C PD 1.5 12 W mW/°C TJ, Tstg −55 to +150 °C Operating and Storage Junction Temperature Range 2 BASE 3 EMITTER TO−92 CASE 29 STYLE 17 3 STRAIGHT LEAD BULK PACK THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W 1 12 2 3 BENT LEAD TAPE & REEL AMMO PACK MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. BC 489x AYWW G G 489x = 489A A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† BC489G TO−92 (Pb−Free) 5000 Units / Bulk BC489RL1G TO−92 (Pb−Free) 2000 / Tape & Reel BC489AG TO−92 (Pb−Free) 5000 Units / Bulk Device *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 March, 2007 − Rev. 3 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: BC489/D BC489, BC489A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max 80 − − 80 − − 5.0 − − − − 100 40 60 100 − − 160 − 400 250 15 − − − − 0.2 0.3 0.5 − − − 0.85 0.9 1.2 − fT − 200 − MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob − 7.0 − pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cib − 50 − pF Characteristic Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 1) (IC = 10 mAdc, IB = 0) V(BR)CEO Collector −Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 60 V, IE = 0) Vdc Vdc ICBO Vdc nAdc ON CHARACTERISTICS DC Current Gain (IC = 10 mAdc, VCE = 2.0 Vdc) (IC = 100 mAdc, VCE = 2.0 Vdc) hFE − BC489 BC489A (IC = 1.0 Adc, VCE = 5.0 Vdc) Collector −Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) VCE(sat) Collector −Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) (Note 1) VBE(sat) Vdc Vdc DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. TURN−ON TIME 100 +10 V 0 tr = 3.0 ns RB Vin 5.0 mF +VBB VCC +40 V −1.0 V 5.0 ms TURN−OFF TIME 100 VCC +40 V 100 RL OUTPUT RB Vin 5.0 mF *CS < 6.0 pF 100 5.0 ms tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities Figure 1. Switching Time Test Circuits http://onsemi.com 2 RL OUTPUT *CS < 6.0 pF 300 80 VCE = 2.0 V TJ = 25°C 200 TJ = 25°C 60 C, CAPACITANCE (pF) f, T CURRENT−GAIN BANDWIDTH PRODUCT (MHz) BC489, BC489A 100 70 50 40 Cibo 20 10 8.0 6.0 30 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 4.0 0.1 200 Cobo 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Current−Gain — Bandwidth Product 50 100 Figure 3. Capacitance 1.0 k 700 500 ts 300 t, TIME (ns) 200 100 70 50 30 20 tf VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25°C 10 5.0 7.0 10 tr td @ VBE(off) = 0.5 V 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 4. Switching Time 1.0 0.7 0.5 D = 0.5 0.2 0.1 0.3 0.2 P(pk) t1 0.02 0.1 0.07 0.05 t2 0.01 SINGLE PULSE 0.03 SINGLE PULSE ZqJC(t) = r(t) • RqJC ZqJA(t) = r(t) • RqJA 0.02 0.01 1.0 2.0 5.0 10 20 50 100 200 500 t, TIME (ms) 1.0k Figure 5. Thermal Response http://onsemi.com 3 2.0k DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN−469) TJ(pk) − TC = P(pk) ZqJC(t) TJ(pk) − TA = P(pk) ZqJA(t) 5.0k 10k 20k 50k 100k IC, COLLECTOR CURRENT (mA) BC489, BC489A 1.0 k 700 500 100 ms 1.0 ms 1.0 s 300 200 TC = 25°C TA = 25°C 100 70 50 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 30 20 10 1.0 BC489 20 30 50 2.0 3.0 5.0 7.0 10 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) 70 100 Figure 6. Active Region — Safe Operating Area 400 hFE , DC CURRENT GAIN TJ =125°C VCE = 1.0 V 200 25°C −55°C 100 80 60 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 300 500 VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 7. DC Current Gain 1.0 TJ = 25°C V, VOLTAGE (VOLTS) 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.5 1.0 2.0 5.0 10 50 100 20 IC, COLLECTOR CURRENT (mA) 200 500 1.0 TJ = 25°C 0.8 0.6 IC = 10 mA 50 mA 100 mA 250 mA 500 mA 0.4 0.2 0 0.05 Figure 8. “On” Voltages 0.1 0.2 0.5 2.0 5.0 1.0 10 IC, COLLECTOR CURRENT (mA) 20 Figure 9. Collector Saturation Region http://onsemi.com 4 50 BC489, BC489A −1.0 −1.2 −0.8 RθVB, TEMPERATURE COEFFICIENT (mV/°C) −0.8 V, VOLTAGE (VOLTS) TJ = 25°C −1.6 RqVB for VBE −2.0 VBE(sat) @ IC/IB = 10 −0.6 VBE(on) @ VCE = −1.0 V −0.4 −0.2 −2.4 VCE(sat) @ IC/IB = 10 −2.8 0.5 1.0 2.0 5.0 20 50 10 100 IC, COLLECTOR CURRENT (mA) 200 0 −0.5 500 −1.0 −2.0 −1.0 −0.8 TJ = 25°C −1.2 −0.8 −1.6 −0.6 −0.4 −500 Figure 11. “On” Voltages RθVB, TEMPERATURE COEFFICIENT (mV/°C) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 10. Base−Emitter Temperature Coefficient −5.0 −10 −20 −50 −100 −200 IC, COLLECTOR CURRENT (mA) IC = −10 mA RqVB for VBE −2.0 −50 mA −100 mA −250 mA −500 mA −2.4 −0.2 0 −0.05 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 IB, BASE CURRENT (mA) −10 −20 −2.8 −0.5 −50 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 IC, COLLECTOR CURRENT (mA) −500 Figure 13. Base−Emitter Temperature Coefficient Figure 12. Collector Saturation Region http://onsemi.com 5 BC489, BC489A PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C SECTION X−X 1 N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− N A R BENT LEAD TAPE & REEL AMMO PACK B P NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. T SEATING PLANE K D X X G J V 1 C SECTION X−X DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 −−− 2.04 2.66 1.50 4.00 2.93 −−− 3.43 −−− N STYLE 17: PIN 1. COLLECTOR 2. BASE 3. EMITTER ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BC489/D