PD- 94948
IRF3711PbF
IRF3711SPbF
IRF3711LPbF
SMPS MOSFET
Applications
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Server Processor Power Synchronous FET
l Optimized for Synchronous Buck
Converters Including Capacitive Induced
Turn-on Immunity
l Lead-Free
HEXFET® Power MOSFET
l
Benefits
l Ultra-Low Gate Impedance
l
l
Very Low RDS(on) at 4.5V VGS
VDSS
RDS(on) max
ID
20V
6.0mΩ
110A
D2Pak
IRF3711SPbF
TO-262
IRF3711LPbF
TO-220AB
IRF3711PbF
Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TA = 25°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
Units
20
± 20
110
69
440
120
3.1
0.96
-55 to + 150
V
V
A
W
W
W/°C
°C
Thermal Resistance
RθJC
RθCS
RθJA
RθJA
Parameter
Typ.
Max.
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB mount)
–––
0.50
–––
–––
1.04
–––
62
40
Units
°C/W
Notes through are on page 11
www.irf.com
1
2/27/04
IRF3711/S/LPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Min.
20
–––
–––
Static Drain-to-Source On-Resistance
–––
Gate Threshold Voltage
1.0
–––
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Typ.
–––
0.022
4.7
6.2
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
6.0
VGS = 10V, ID = 15A
mΩ
8.5
VGS = 4.5V, ID = 12A
3.0
V
VDS = VGS, ID = 250µA
20
VDS = 16V, VGS = 0V
µA
100
VDS = 16V, VGS = 0V, TJ = 125°C
200
VGS = 16V
nA
-200
VGS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
53
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
29
7.3
8.9
33
12
220
17
12
2980
1770
280
Max. Units
Conditions
–––
S
VDS = 16V, ID = 30A
44
ID = 15A
–––
nC
VDS = 10V
–––
VGS = 4.5V
–––
VGS = 0V, VDS = 10V
–––
VDD = 10V
–––
ID = 30A
ns
–––
RG = 1.8Ω
–––
VGS = 4.5V
–––
VGS = 0V
–––
pF
VDS = 10V
–––
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
Max.
Units
–––
–––
460
30
mJ
A
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
trr
Qrr
2
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse
Reverse
Reverse
Reverse
Recovery
Recovery
Recovery
Recovery
Time
Charge
Time
Charge
Min. Typ. Max. Units
–––
––– 110
–––
–––
440
––– 0.88
––– 0.82
––– 50
––– 61
––– 48
––– 65
1.3
–––
75
92
72
98
A
V
ns
nC
ns
nC
Conditions
D
MOSFET symbol
showing the
G
integral reverse
S
p-n junction diode.
TJ = 25°C, IS = 30A, VGS = 0V
TJ = 125°C, IS = 30A, VGS = 0V
TJ = 25°C, IF = 16A, VR=10V
di/dt = 100A/µs
TJ = 125°C, IF = 16A, VR=10V
di/dt = 100A/µs
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IRF3711/S/LPbF
1000
1000
VGS
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
VGS
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
100
100
2.7V
2.7V
20µs PULSE WIDTH
TJ = 25 °C
10
0.1
1
10
10
0.1
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25 ° C
TJ = 150 ° C
100
V DS = 25V
20µs PULSE WIDTH
3.0
4.0
5.0
6.0
7.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
1000
10
2.0
1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
20µs PULSE WIDTH
TJ = 150 ° C
8.0
2.0
ID = 110A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF3711/S/LPbF
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
C, Capacitance(pF)
Coss = Cds + Cgd
10000
Ciss
Coss
1000
Crss
VGS , Gate-to-Source Voltage (V)
14
100000
ID = 30A
VDS = 16V
VDS = 10V
12
10
8
6
4
2
100
1
10
100
0
VDS , Drain-to-Source Voltage (V)
10000
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
20
10
TJ = 25 ° C
1
V GS = 0 V
0.8
60
80
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1000
TJ = 150 ° C
0.1
0.2
40
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1.4
2.0
VSD,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
0
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
FOR TEST CIRCUIT
SEE FIGURE 13
2.6
100
100µsec
1msec
10
1
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF3711/S/LPbF
120
V DS
LIMITED BY PACKAGE
VGS
ID , Drain Current (A)
100
RD
D.U.T.
RG
+
-VDD
80
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
60
Fig 10a. Switching Time Test Circuit
40
VDS
20
0
90%
25
50
75
100
125
150
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
PDM
0.10
0.1
t1
0.05
0.02
0.01
0.01
0.00001
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF3711/S/LPbF
EAS , Single Pulse Avalanche Energy (mJ)
1400
15V
TOP
1200
L
VDS
BOTTOM
1000
D.U.T
RG
20V
DRIVER
ID
13A
19A
30A
+
V
- DD
IAS
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
A
800
600
400
200
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
VGS
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRF3711/S/LPbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
RG
•
•
•
•
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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7
IRF3711/S/LPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2.87 (.113)
2.62 (.103)
10.54 (.415)
10.29 (.405)
-B-
3.78 (.149)
3.54 (.139)
4.69 (.185)
4.20 (.165)
-A-
1.32 (.052)
1.22 (.048)
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
1
2
3
4- DRAIN
14.09 (.555)
13.47 (.530)
1.40 (.055)
1.15 (.045)
4- COLLECTOR
4.06 (.160)
3.55 (.140)
3X
3X
LEAD ASSIGNMENTS
IGBTs, CoPACK
1 - GATE
2 - DRAIN
1- GATE
1- GATE
3 - SOURCE 2- COLLECTOR
2- DRAIN
3- SOURCE
3- EMITTER
4 - DRAIN
HEXFET
0.93 (.037)
0.69 (.027)
0.36 (.014)
3X
M
B A M
0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
2 CONTROLLING DIMENSION : INCH
4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
E XAMPL E : T HIS IS AN IR F 1010
L OT CODE 1789
AS S E MB L E D ON WW 19, 1997
IN T H E AS S E MB L Y L INE "C"
Note: "P" in assembly line
position indicates "Lead-Free"
INT E R NAT IONAL
R E CT IF IE R
L OGO
AS S E MB L Y
L OT CODE
8
PAR T NU MB E R
DAT E CODE
YE AR 7 = 1997
WE E K 19
L INE C
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IRF3711/S/LPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information (Lead-Free)
T H IS IS AN IR F 5 3 0 S W IT H
L OT COD E 80 2 4
AS S E M B L E D ON W W 0 2, 20 00
IN T H E AS S E M B L Y L IN E "L "
IN T E R N AT IO N AL
R E C T IF IE R
L OGO
N ote: "P " in as s em bly lin e
po s itio n in dicates "L ead-F r ee"
P AR T N U M B E R
F 5 30 S
AS S E M B L Y
L O T CO D E
D AT E C O D E
Y E AR 0 = 2 0 0 0
W E E K 02
L IN E L
OR
IN T E R N AT IO N AL
R E C T IF IE R
L O GO
AS S E M B L Y
L OT COD E
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P AR T N U M B E R
F 530S
D AT E CO D E
P = D E S IG N AT E S L E AD -F R E E
P R O D U C T (O P T IO N AL )
Y E AR 0 = 2 0 0 0
W E E K 02
A = AS S E M B L Y S IT E CO D E
9
IRF3711/S/LPbF
TO-262 Package Outline
IGBT
1- GATE
2- COLLECTOR
3- EMITTER
TO-262 Part Marking Information
EXAMPLE: T HIS IS AN IRL3103L
LOT CODE 1789
AS SEMBLED ON WW 19, 1997
IN T HE ASS EMBLY LINE "C"
Note: "P" in as s embly line
pos ition indicates "Lead-Free"
INT ERNAT IONAL
RECT IFIER
LOGO
ASS EMBLY
LOT CODE
PART NUMBER
DAT E CODE
YEAR 7 = 1997
WEEK 19
LINE C
OR
INT ERNAT IONAL
RECT IFIER
LOGO
AS S EMBLY
LOT CODE
10
PART NUMBER
DAT E CODE
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPTIONAL)
YEAR 7 = 1997
WEEK 19
A = AS S EMBLY S ITE CODE
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IRF3711/S/LPbF
D2Pak Tape & Reel Infomation
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
1.65 (.065)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 1.0mH
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is only applied to TO-220AB package
RG = 25Ω, IAS = 30A.
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/04
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11
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/