ISSI IS41LV16105B-50K 1m x 16 (16-mbit) dynamic ram with fast page mode Datasheet

ISSI
®
IS41LV16105B
1M x 16 (16-MBIT) DYNAMIC RAM
WITH FAST PAGE MODE
APRIL 2005
FEATURES
DESCRIPTION
• TTL compatible inputs and outputs; tristate I/O
The ISSI IS41LV16105B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. Fast Page
Mode allows 1,024 random accesses within a single row with
access cycle time as short as 20 ns per 16-bit word. The Byte
Write control, of upper and lower byte, makes the IS41LV16105B
ideal for use in 16-, 32-bit wide data bus systems.
• Refresh Interval:
— 1,024 cycles/16 ms
• Refresh Mode:
— RAS-Only, CAS-before-RAS (CBR), and Hidden
These features make the IS41LV16105B ideally suited for highbandwidth graphics, digital signal processing, high-performance
computing systems, and peripheral applications.
• JEDEC standard pinout
• Single power supply: 3.3V ± 10%
• Byte Write and Byte Read operation via two CAS
o
o
• Extended Temperature Range: -30 C to +85 C
The IS41LV16105B is packaged in a 42-pin 400-mil SOJ and
400-mil 44- (50-) pin TSOP (Type II).
• Industrial Temperature Range: -40oC to +85oC
• Lead-free available
KEY TIMING PARAMETERS
Parameter
-50
-60
Unit
Max. RAS Access Time (tRAC)
50
60
ns
PIN CONFIGURATIONS
Max. CAS Access Time (tCAC)
13
15
ns
44(50)-Pin TSOP (Type II)
Max. Column Address Access Time (tAA)
25
30
ns
Min. Fast Page Mode Cycle Time (tPC)
20
25
ns
Min. Read/Write Cycle Time (tRC)
84
104
ns
42-Pin SOJ
VDD
1
44
GND
VDD
1
42
GND
I/O0
2
43
I/O15
I/O0
2
41
I/O15
I/O1
3
42
I/O14
I/O1
3
40
I/O14
I/O2
4
41
I/O13
I/O2
4
39
I/O13
I/O3
5
40
I/O12
VDD
6
39
GND
I/O3
5
38
I/O12
I/O4
7
38
I/O11
VDD
6
37
GND
I/O5
8
37
I/O10
I/O4
7
36
I/O11
I/O6
9
36
I/O9
I/O5
8
35
I/O10
9
34
I/O9
I/O7
10
35
I/O8
I/O6
NC
11
34
NC
I/O7
10
33
I/O8
NC
11
32
NC
NC
12
33
NC
NC
12
31
LCAS
NC
13
32
LCAS
WE
13
30
UCAS
WE
14
31
UCAS
RAS
14
29
OE
RAS
15
30
OE
NC
16
29
A9
NC
15
28
A9
NC
17
28
A8
NC
16
27
A8
A0
18
27
A7
A0
17
26
A7
A1
19
26
A6
A1
18
25
A6
A2
20
25
A5
A2
19
24
A5
A3
21
24
A4
A3
20
23
A4
VDD
22
23
GND
VDD
21
22
GND
PIN DESCRIPTIONS
A0-A9
Address Inputs
I/O0-15
Data Inputs/Outputs
WE
Write Enable
OE
Output Enable
RAS
Row Address Strobe
UCAS
Upper Column Address Strobe
LCAS
Lower Column Address Strobe
VDD
Power
GND
Ground
NC
No Connection
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
04/18/05
1
ISSI
IS41LV16105B
®
FUNCTIONAL BLOCK DIAGRAM
OE
WE
LCAS
UCAS
CAS
CLOCK
GENERATOR
WE
CONTROL
LOGICS
CAS
WE
OE
CONTROL
LOGIC
OE
DATA I/O BUS
COLUMN DECODERS
SENSE AMPLIFIERS
ADDRESS
BUFFERS
A0-A9
2
ROW DECODER
REFRESH
COUNTER
MEMORY ARRAY
1,048,576 x 16
DATA I/O BUFFERS
RAS
CLOCK
GENERATOR
RAS
RAS
I/O0-I/O15
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
04/18/05
ISSI
IS41LV16105B
®
TRUTH TABLE
Function
RAS
LCAS
UCAS
WE
OE
Address tR/tC
Standby
H
H
H
X
X
X
High-Z
Read: Word
L
L
L
H
L
ROW/COL
D OUT
Read: Lower Byte
L
L
H
H
L
ROW/COL
Lower Byte, DOUT
Upper Byte, High-Z
Read: Upper Byte
L
H
L
H
L
ROW/COL
Lower Byte, High-Z
Upper Byte, DOUT
Write: Word (Early Write)
L
L
L
L
X
ROW/COL
DIN
Write: Lower Byte (Early Write)
L
L
H
L
X
ROW/COL
Lower Byte, DIN
Upper Byte, High-Z
Write: Upper Byte (Early Write)
L
H
L
L
X
ROW/COL
Lower Byte, High-Z
Upper Byte, DIN
Read-Write(1,2)
L
L
L
H→L
L→H
ROW/COL
DOUT, DIN
L→H→L
L→H→L
L
L
L
L
H
L
L
X
ROW/COL
ROW/COL
D OUT
D OUT
L
H
H
X
X
ROW/NA
High-Z
H→L
L
L
X
X
X
High-Z
Hidden Refresh
RAS-Only Refresh
(4)
CBR Refresh
Read(2)
Write(1,3)
I/O
Notes:
1. These WRITE cycles may also be BYTE WRITE cycles (either LCAS or UCAS active).
2. These READ cycles may also be BYTE READ cycles (either LCAS or UCAS active).
3. EARLY WRITE only.
4. At least one of the two CAS signals must be active (LCAS or UCAS).
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
04/18/05
3
ISSI
IS41LV16105B
®
Functional Description
Write Cycle
The IS41LV16105B is a CMOS DRAM optimized for highspeed bandwidth, low power applications. During READ or
WRITE cycles, each bit is uniquely addressed through the
16 address bits. These are entered ten bits (A0-A9) at a
time. The row address is latched by the Row Address
Strobe (RAS). The column address is latched by the
Column Address Strobe (CAS). RAS is used to latch the
first nine bits and CAS is used the latter nine bits.
A write cycle is initiated by the falling edge of CAS and WE,
whichever occurs last. The input data must be valid at or
before the falling edge of CAS or WE, whichever occurs
last.
The IS41LV16105B has two CAS controls, LCAS and
UCAS. The LCAS and UCAS inputs internally generates a
CAS signal functioning in an identical manner to the single
CAS input on the other 1M x 16 DRAMs. The key difference
is that each CAS controls its corresponding I/O tristate
logic (in conjunction with OE and WE and RAS). LCAS
controls I/O0 through I/O7 and UCAS controls I/O8 through
I/O15.
1. By clocking each of the 1,024 row addresses (A0
through A9) with RAS at least once every 16 ms. Any
read, write, read-modify-write or RAS-only cycle refreshes the addressed row.
Refresh Cycle
To retain data, 1,024 refresh cycles are required in each
16 ms period. There are two ways to refresh the memory.
2. Using a CAS-before-RAS refresh cycle. CAS-beforeRAS refresh is activated by the falling edge of RAS,
while holding CAS LOW. In CAS-before-RAS refresh
cycle, an internal 9-bit counter provides the row addresses and the external address inputs are ignored.
The IS41LV16105B CAS function is determined by the first
CAS (LCAS or UCAS) transitioning LOW and the last
transitioning back HIGH. The two CAS controls give the
IS41LV16105B both BYTE READ and BYTE WRITE cycle
capabilities.
CAS-before-RAS is a refresh-only mode and no data
access or device selection is allowed. Thus, the output
remains in the High-Z state during the cycle.
Memory Cycle
Power-On
A memory cycle is initiated by bring RAS LOW and it is
terminated by returning both RAS and CAS HIGH. To
ensures proper device operation and data integrity any
memory cycle, once initiated, must not be ended or
aborted before the minimum tRAS time has expired. A new
cycle must not be initiated until the minimum precharge
time tRP, tCP has elapsed.
After application of the VDD supply, an initial pause of
200 µs is required followed by a minimum of eight
initialization cycles (any combination of cycles containing a RAS signal).
During power-on, it is recommended that RAS track with
VDD or be held at a valid VIH to avoid current surges.
Read Cycle
A read cycle is initiated by the falling edge of CAS or OE,
whichever occurs last, while holding WE HIGH. The
column address must be held for a minimum time specified by tAR. Data Out becomes valid only when tRAC, tAA,
tCAC and tOEA are all satisfied. As a result, the access time
is dependent on the timing relationships between these
parameters.
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
04/18/05
ISSI
IS41LV16105B
®
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Parameters
Rating
Unit
VT
Voltage on Any Pin Relative to GND
3.3V
–0.5 to +4.6
V
VDD
Supply Voltage
3.3V
–0.5 to +4.6
V
IOUT
Output Current
50
mA
PD
Power Dissipation
1
W
TA
Commercial Operation Temperature
Extended Temperature
Industrial Temperature
0 to +70
–30 to +85
–40 to +85
°C
°C
°C
TSTG
Storage Temperature
–55 to +125
°C
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect
reliability.
RECOMMENDED OPERATING CONDITIONS (Voltages are referenced to GND.)
Symbol
Parameter
Min.
Typ.
Max.
Unit
VDD
Supply Voltage
3.3V
3.0
3.3
3.6
V
VIH
Input High Voltage
3.3V
2.0
—
VDD + 0.3
V
VIL
Input Low Voltage
3.3V
–0.3
—
0.8
V
TA
Commercial Ambient Temperature
Extended Ambient Temperature
Industrial Ambient Temperature
0
–30
–40
—
—
—
+70
+85
+85
°C
°C
°C
CAPACITANCE(1,2)
Symbol
Parameter
Max.
Unit
CIN1
Input Capacitance: A0-A9
5
pF
CIN2
Input Capacitance: RAS, UCAS, LCAS, WE, OE
7
pF
CIO
Data Input/Output Capacitance: I/O0-I/O15
7
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz,
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
04/18/05
5
ISSI
IS41LV16105B
®
ELECTRICAL CHARACTERISTICS(1)
(Recommended Operating Conditions unless otherwise noted.)
Symbol Parameter
Test Condition
IIL
Input Leakage Current
IIO
Speed
Min.
Max.
Unit
Any input 0V ≤ VIN ≤ VDD
Other inputs not under test = 0V
–5
5
µA
Output Leakage Current
Output is disabled (Hi-Z)
0V ≤ VOUT ≤ VDD
–5
5
µA
VOH
Output High Voltage Level
IOH = –2.0 mA (3.3V)
2.4
—
V
VOL
Output Low Voltage Level
IOL = 2.0 mA (3.3V)
—
0.4
V
ICC1
Standby Current: TTL
RAS, LCAS, UCAS ≥ VIH
Commerical
Extended/Industrial
3.3V
3.3V
—
—
1
2
mA
mA
3.3V
—
0.5
mA
ICC2
Standby Current: CMOS
RAS, LCAS, UCAS ≥ VDD – 0.2V
ICC3
Operating Current:
Random Read/Write(2,3,4)
Average Power Supply Current
RAS, LCAS, UCAS,
Address Cycling, tRC = tRC (min.)
-50
-60
—
—
160
145
mA
ICC4
Operating Current:
Fast Page Mode(2,3,4)
Average Power Supply Current
RAS = VIL, LCAS, UCAS,
Cycling tPC = tPC (min.)
-50
-60
—
—
90
80
mA
ICC5
Refresh Current:
RAS-Only(2,3)
Average Power Supply Current
RAS Cycling, LCAS, UCAS ≥ VIH
tRC = tRC (min.)
-50
-60
—
—
160
145
mA
ICC6
Refresh Current:
CBR(2,3,5)
Average Power Supply Current
RAS, LCAS, UCAS Cycling
tRC = tRC (min.)
-50
-60
—
—
160
145
mA
Notes:
1. An initial pause of 200 µs is required after power-up followed by eight RAS refresh cycles (RAS-Only or CBR) before proper device
operation is assured. The eight RAS cycles wake-up should be repeated any time the tREF refresh requirement is exceeded.
2. Dependent on cycle rates.
3. Specified values are obtained with minimum cycle time and the output open.
4. Column-address is changed once each Fast page cycle.
5. Enables on-chip refresh and address counters.
6
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
04/18/05
ISSI
IS41LV16105B
®
AC CHARACTERISTICS(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.)
Symbol
-50
Min. Max.
Parameter
-60
Min. Max.
Units
t RC
Random READ or WRITE Cycle Time
84
—
104
—
ns
t RAC
Access Time from RAS
—
50
—
60
ns
t CAC
Access Time from CAS(6, 8, 15)
—
13
—
15
ns
tAA
Access Time from Column-Address(6)
—
25
—
30
ns
tRAS
RAS Pulse Width
50
10K
60
10K
ns
t RP
RAS Precharge Time
30
—
40
—
ns
tCAS
CAS Pulse Width(26)
8
10K
10
10K
ns
t CP
CAS Precharge Time(9, 25)
9
—
9
—
ns
t CSH
CAS Hold Time
38
—
40
—
ns
t RCD
RAS to CAS Delay Time
12
37
14
45
ns
tASR
Row-Address Setup Time
0
—
0
—
ns
t RAH
Row-Address Hold Time
8
—
10
—
ns
0
—
0
—
ns
tASC
(6, 7)
(21)
(10, 20)
Column-Address Setup Time
(20)
(20)
t CAH
Column-Address Hold Time
8
—
10
—
ns
t AR
Column-Address Hold Time
(referenced to RAS)
30
—
40
—
ns
t RAD
RAS to Column-Address Delay Time(11)
10
25
12
30
ns
t RAL
Column-Address to RAS Lead Time
25
—
30
—
ns
t RPC
RAS to CAS Precharge Time
5
—
5
—
ns
t RSH
RAS Hold Time(27)
8
—
10
—
ns
t RHCP
RAS Hold Time from CAS Precharge
37
—
37
—
ns
tCLZ
CAS to Output in Low-Z
0
—
0
—
ns
t CRP
CAS to RAS Precharge Time
5
—
5
—
ns
tOD
Output Disable Time(19, 28, 29)
3
15
3
15
ns
tOE
Output Enable Time(15, 16)
—
13
—
15
ns
tOED
Output Enable Data Delay (Write)
20
—
20
—
ns
tOEHC
OE HIGH Hold Time from CAS HIGH
5
—
5
—
ns
tOEP
OE HIGH Pulse Width
10
—
10
—
ns
tOES
OE LOW to CAS HIGH Setup Time
5
—
5
—
ns
(15, 29)
(21)
(17, 20)
t RCS
Read Command Setup Time
0
—
0
—
ns
t RRH
Read Command Hold Time
(referenced to RAS)(12)
0
—
0
—
ns
t RCH
Read Command Hold Time
(referenced to CAS)(12, 17, 21)
0
—
0
—
ns
t WCH
Write Command Hold Time(17, 27)
8
—
10
—
ns
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
04/18/05
7
ISSI
IS41LV16105B
®
AC CHARACTERISTICS (Continued)(1,2,3,4,5,6)
(Recommended Operating Conditions unless otherwise noted.)
Symbol
Min.
-50
Max.
Min.
-60
Max.
Units
t WCR
Write Command Hold Time
(referenced to RAS)(17)
40
—
50
—
ns
tWP
Write Command Pulse Width(17)
8
—
10
—
ns
tWPZ
WE Pulse Widths to Disable Outputs
10
—
10
—
ns
t RWL
Write Command to RAS Lead Time
13
—
15
—
ns
t CWL
Write Command to CAS Lead Time
8
—
10
—
ns
tWCS
Write Command Setup Time
(14, 17, 20)
0
—
0
—
ns
t DHR
Data-in Hold Time (referenced to RAS)
39
—
39
—
ns
t ACH
Column-Address Setup Time to CAS
Precharge during WRITE Cycle
15
—
15
—
ns
tOEH
OE Hold Time from WE during
READ-MODIFY-WRITE cycle(18)
8
—
10
—
ns
t DS
Data-In Setup Time(15, 22)
0
—
0
—
ns
t DH
Data-In Hold Time(15, 22)
8
—
10
—
ns
t RWC
READ-MODIFY-WRITE Cycle Time
108
—
133
—
ns
t RWD
RAS to WE Delay Time during
READ-MODIFY-WRITE Cycle(14)
64
—
77
—
ns
t CWD
CAS to WE Delay Time(14, 20)
26
—
32
—
ns
tAWD
Column-Address to WE Delay Time(14)
39
—
47
—
ns
t PC
Fast Page Mode READ or WRITE
Cycle Time(24)
20
—
25
—
ns
t RASP
RAS Pulse Width
50
100K
60
100K
ns
t CPA
Access Time from CAS Precharge
—
30
—
35
ns
t PRWC
READ-WRITE Cycle Time(24)
56
—
68
—
ns
t COH
Data Output Hold after CAS LOW
5
—
5
—
ns
tOFF
Output Buffer Turn-Off Delay from
CAS or RAS(13,15,19, 29)
1.6
12
1.6
15
ns
tWHZ
Output Disable Delay from WE
3
10
3
10
ns
t CLCH
Last CAS going LOW to First CAS
returning HIGH(23)
10
—
10
—
ns
t CSR
CAS Setup Time (CBR REFRESH)(30, 20)
5
—
5
—
ns
t CHR
CAS Hold Time (CBR REFRESH)
8
—
10
—
ns
t ORD
OE Setup Time prior to RAS during
HIDDEN REFRESH Cycle
0
—
0
—
ns
tREF
Auto Refresh Period (1,024 Cycles)
—
16
—
16
ms
1
50
1
50
ns
tT
8
Parameter
(17)
(17, 21)
(15)
Transition Time (Rise or Fall)
(2, 3)
(30, 21)
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
04/18/05
IS41LV16105B
ISSI
®
AC TEST CONDITIONS
Output load: One TTL Load and 50 pF (VDD = 3.3V ±10%)
Input timing reference levels: VIH = 2.0V, VIL = 0.8V (VDD = 3.3V ±10%)
Output timing reference levels: VOH = 2.0V, VOL = 0.8V (3.3V ±10%)
Notes:
1. An initial pause of 200 µs is required after power-up followed by eight RAS refresh cycle (RAS-Only or CBR) before proper device
operation is assured. The eight RAS cycles wake-up should be repeated any time the tREF refresh requirement is exceeded.
2. VIH (MIN) and VIL (MAX) are reference levels for measuring timing of input signals. Transition times, are measured between VIH and
VIL (or between VIL and VIH) and assume to be 1 ns for all inputs.
3. In addition to meeting the transition rate specification, all input signals must transit between VIH and VIL (or between VIL and VIH) in a
monotonic manner.
4. If CAS and RAS = VIH, data output is High-Z.
5. If CAS = VIL, data output may contain data from the last valid READ cycle.
6. Measured with a load equivalent to one TTL gate and 50 pF.
7. Assumes that tRCD ≤ tRCD (MAX). If tRCD is greater than the maximum recommended value shown in this table, tRAC will increase
by the amount that tRCD exceeds the value shown.
8. Assumes that tRCD ≥ tRCD (MAX).
9. If CAS is LOW at the falling edge of RAS, data out will be maintained from the previous cycle. To initiate a new cycle and clear the data
output buffer, CAS and RAS must be pulsed for tCP.
10. Operation with the tRCD (MAX) limit ensures that tRAC (MAX) can be met. tRCD (MAX) is specified as a reference point only; if tRCD is
greater than the specified tRCD (MAX) limit, access time is controlled exclusively by tCAC.
11. Operation within the tRAD (MAX) limit ensures that tRCD (MAX) can be met. tRAD (MAX) is specified as a reference point only; if tRAD is
greater than the specified tRAD (MAX) limit, access time is controlled exclusively by tAA.
12. Either tRCH or tRRH must be satisfied for a READ cycle.
13. tOFF (MAX) defines the time at which the output achieves the open circuit condition; it is not a reference to VOH or VOL.
14. tWCS, tRWD, tAWD and tCWD are restrictive operating parameters in LATE WRITE and READ-MODIFY-WRITE cycle only. If tWCS ≥ tWCS
(MIN), the cycle is an EARLY WRITE cycle and the data output will remain open circuit throughout the entire cycle. If tRWD ≥ tRWD
(MIN), tAWD ≥ tAWD (MIN) and tCWD ≥ tCWD (MIN), the cycle is a READ-WRITE cycle and the data output will contain data read from
the selected cell. If neither of the above conditions is met, the state of I/O (at access time and until CAS and RAS or OE go back
to VIH) is indeterminate. OE held HIGH and WE taken LOW after CAS goes LOW result in a LATE WRITE (OE-controlled) cycle.
15. Output parameter (I/O) is referenced to corresponding CAS input, I/O0-I/O7 by LCAS and I/O8-I/O15 by UCAS.
16. During a READ cycle, if OE is LOW then taken HIGH before CAS goes HIGH, I/O goes open. If OE is tied permanently LOW, a LATE
WRITE or READ-MODIFY-WRITE is not possible.
17. Write command is defined as WE going low.
18. LATE WRITE and READ-MODIFY-WRITE cycles must have both tOD and tOEH met (OE HIGH during WRITE cycle) in order to ensure
that the output buffers will be open during the WRITE cycle. The I/Os will provide the previously written data if CAS remains LOW and
OE is taken back to LOW after tOEH is met.
19. The I/Os are in open during READ cycles once tOD or tOFF occur.
20. The first χCAS edge to transition LOW.
21. The last χCAS edge to transition HIGH.
22. These parameters are referenced to CAS leading edge in EARLY WRITE cycles and WE leading edge in LATE WRITE or READMODIFY-WRITE cycles.
23. Last falling χCAS edge to first rising χCAS edge.
24. Last rising χCAS edge to next cycle’s last rising χCAS edge.
25. Last rising χCAS edge to first falling χCAS edge.
26. Each χCAS must meet minimum pulse width.
27. Last χCAS to go LOW.
28. I/Os controlled, regardless UCAS and LCAS.
29. The 3 ns minimum is a parameter guaranteed by design.
30. Enables on-chip refresh and address counters.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
04/18/05
9
ISSI
IS41LV16105B
®
FAST-PAGE-MODE READ CYCLE
tRC
tRAS
tRP
RAS
tCSH
tCRP
tRSH
tCAS tCLCH
tRCD
tRRH
UCAS/LCAS
tAR
tRAD
tASR
ADDRESS
tRAH
tRAL
tCAH
tASC
Row
Column
Row
tRCS
tRCH
WE
tAA
tRAC
tCAC
tCLC
I/O
tOFF(1)
Open
Open
Valid Data
tOE
tOD
OE
tOES
Don’t Care
Note:
1. tOFF is referenced from rising edge of RAS or CAS, whichever occurs last.
10
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
04/18/05
ISSI
IS41LV16105B
®
FAST PAGE MODE READ-MODIFY-WRITE CYCLE
tRASP
tRP
RAS
tPRWC
tCAS
tCSH
tCAS
tCRP
tRCD
tRSH
tCAS
tCP
tCRP
tCP
UCAS/LCAS
tAR
tRAH
tRAD
tASC
tASR
ADDRESS
tCPWD
tRAL
tCAH
tCPWD
Row
tCAH
tAR
Column
tASC
Column
tCWL
tRWD
tAWD
tCWD
tRCS
tCAH
tASC
Column
tCWL
tRWL
tCWL
tAWD
tCWD
tWP
tAWD
tCWD
tWP
tWP
WE
tAA
tAA
tCAC
tCAC
tOEA
OE
tCAC
tOEA
tOEZ
tOED
tRAC
tOEA
tOEZ
tOED
OUT
IN
tOEZ
tOED
tDH
tDH
tDS tCLZ
tCLZ
I/O0-I/O15
tAA
tDS
OUT
IN
tDH
tCLZ
OUT
tDS
IN
Don’t Care
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
04/18/05
11
ISSI
IS41LV16105B
®
FAST-PAGE-MODE EARLY WRITE CYCLE (OE = DON'T CARE)
tRC
tRAS
tRP
RAS
tCSH
tCRP
tRSH
tCAS tCLCH
tRCD
UCAS/LCAS
tAR
tRAD
tASR
ADDRESS
tRAH
tRAL
tCAH
tACH
tASC
Row
Column
Row
tCWL
tRWL
tWCR
tWCS
tWCH
tWP
WE
tDHR
tDS
I/O
tDH
Valid Data
Don’t Care
12
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
04/18/05
ISSI
IS41LV16105B
®
FAST-PAGE-MODE READ WRITE CYCLE (LATE WRITE and READ-MODIFY-WRITE Cycles)
tRWC
tRAS
tRP
RAS
tCSH
tCRP
tRSH
tCAS tCLCH
tRCD
UCAS/LCAS
tAR
tRAD
tASR
tRAH
tRAL
tCAH
tASC
tACH
ADDRESS
Row
Column
Row
tRWD
tCWL
tRWL
tCWD
tRCS
tAWD
tWP
WE
tAA
tRAC
tCAC
tCLZ
I/O
tDS
Open
Valid DOUT
tOE
tOD
tDH
Valid DIN
Open
tOEH
OE
Don’t Care
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
04/18/05
13
ISSI
IS41LV16105B
®
FAST PAGE MODE EARLY WRITE CYCLE
tRASP
tRP
RAS
tCAS
tCRP
tRHCP
tRSH
tCAS
tPC
tCAS
tCSH
tRCD
tCP
tCRP
tCP
UCAS/LCAS
tAR
tRAL
tRAH
tRAD
tASC
tASR
ADDRESS
Row
tCAH
tCAH
tAR
Column
tASC
Column
Column
tCWL
tWCS
tWCH
tCAH
tASC
tCWL
tWCH tWCS
tWCS
tWP
tCWL
tWP
tWCH
tWP
WE
tWCR
OE
tDHR
tDS
I/O0-I/O15
tDH
Valid DIN
tDS
tDH
Valid DIN
tDS
tDH
Valid DIN
Don’t Care
14
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
04/18/05
ISSI
IS41LV16105B
®
AC WAVEFORMS
READ CYCLE (With WE-Controlled Disable)
RAS
tCSH
tCRP
tRCD
tCP
tCAS
UCAS/LCAS
tAR
tRAD
tASR
ADDRESS
tRAH
tCAH
tASC
Row
tASC
Column
Column
tRCS
tRCH
tRCS
WE
tAA
tRAC
tCAC
tCLZ
Open
I/O
tWHZ
tCLZ
Valid Data
Open
tOE
tOD
OE
Don’t Care
RAS
RAS-ONLY REFRESH CYCLE (OE, WE = DON'T CARE)
tRC
tRAS
tRP
RAS
tCRP
tRPC
UCAS/LCAS
tASR
ADDRESS
tRAH
Row
I/O
Row
Open
Don’t Care
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
04/18/05
15
ISSI
IS41LV16105B
®
CBR REFRESH CYCLE (Addresses; WE, OE = DON'T CARE)
tRP
tRAS
tRP
tRAS
RAS
tCHR
tRPC
tCP
tCHR
tRPC
tCSR
tCSR
UCAS/LCAS
Open
I/O
HIDDEN REFRESH CYCLE(1) (WE = HIGH; OE = LOW)
tRAS
tRP
tRAS
RAS
tCRP
tRCD
tASR
tRAD
tRAH tASC
tRSH
tCHR
UCAS/LCAS
tAR
ADDRESS
Row
tRAL
tCAH
Column
tAA
tRAC
tOFF(2)
tCAC
tCLZ
I/O
Open
Valid Data
tOE
Open
tOD
tORD
OE
Don’t Care
Notes:
1. A Hidden Refresh may also be performed after a Write Cycle. In this case, WE = LOW and OE = HIGH.
2. tOFF is referenced from rising edge of RAS or CAS, whichever occurs last.
16
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
04/18/05
ISSI
IS41LV16105B
®
ORDERING INFORMATION : 3.3V
Commercial Range: 0oC to +70oC
Speed (ns)
Order Part No.
Package
50
IS41LV16105B-50K
IS41LV16105B-50KL
IS41LV16105B-50T
IS41LV16105B-50TL
400-mil SOJ
400-mil SOJ, Lead-free
400-mil TSOP (Type II)
400-mil TSOP (Type II), Lead-free
60
IS41LV16105B-60K
IS41LV16105B-60KL
IS41LV16105B-60T
IS41LV16105B-60TL
400-mil SOJ
400-mil SOJ, Lead-free
400-mil TSOP (Type II)
400-mil TSOP (Type II), Lead-free
Extended Range: -30oC to +85oC
Speed (ns)
Order Part No.
Package
50
IS41LV16105B-50KE
IS41LV16105B-50KLE
IS41LV16105B-50TE
IS41LV16105B-50TLE
400-mil SOJ
400-mil SOJ, Lead-free
400-mil TSOP (Type II)
400-mil TSOP (Type II), Lead-free
60
IS41LV16105B-60KE
IS41LV16105B-60KLE
IS41LV16105B-60TE
IS41LV16105B-60TLE
400-mil SOJ
400-mil SOJ, Lead-free
400-mil TSOP (Type II)
400-mil TSOP (Type II), Lead-free
Industrial Range: -40oC to +85oC
Speed (ns)
Order Part No.
Package
50
IS41LV16105B-50KI
IS41LV16105B-50KLI
IS41LV16105B-50TI
IS41LV16105B-50TLI
400-mil SOJ
400-mil SOJ, Lead-free
400-mil TSOP (Type II)
400-mil TSOP (Type II), Lead-free
60
IS41LV16105B-60KI
IS41LV16105B-60KLI
IS41LV16105B-60TI
IS41LV16105B-60TLI
400-mil SOJ
400-mil SOJ, Lead-free
400-mil TSOP (Type II)
400-mil TSOP (Type II), Lead-free
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
04/18/05
17
ISSI
PACKAGING INFORMATION
®
400-mil Plastic SOJ
Package Code: K
N
Notes:
1. Controlling dimension:
millimeters.
2. BSC = Basic lead spacing
between centers.
3. Dimensions D and E1 do not
include mold flash protrusions
and should be measured from
the bottom of the package.
4. Reference document: JEDEC
MS-027.
N/2+1
E1
1
E
N/2
SEATING PLANE
D
b
A
C
A2
e
Symbol
No. Leads
A
A1
A2
B
b
C
D
E
E1
E2
e
B
Millimeters
Inches
Min Max
Min
Max
(N)
28
3.25 3.75
0.128 0.148
0.64 —
0.025
—
2.08 —
0.082
—
0.38 0.51
0.015 0.020
0.66 0.81
0.026 0.032
0.18 0.33
0.007 0.013
18.29 18.54
0.720 0.730
11.05 11.30
0.435 0.445
10.03 10.29
0.395 0.405
9.40 BSC
0.370 BSC
1.27 BSC
0.050 BSC
A1
E2
Millimeters
Min Max
Inches
Min Max
Millimeters
Min Max
32
3.25 3.75
0.64 —
2.08 —
0.38 0.51
0.66 0.81
0.18 0.33
20.82 21.08
11.05 11.30
10.03 10.29
9.40 BSC
1.27 BSC
0.128 0.148
0.025
—
0.082
—
0.015 0.020
0.026 0.032
0.007 0.013
0.820 0.830
0.435 0.445
0.395 0.405
0.370 BSC
0.050 BSC
3.25 3.75
0.64 —
2.08 —
0.38 0.51
0.66 0.81
0.18 0.33
23.37 23.62
11.05 11.30
10.03 10.29
9.40 BSC
1.27 BSC
Inches
Min Max
36
0.128 0.148
0.025
—
0.082
—
0.015 0.020
0.026 0.032
0.007 0.013
0.920 0.930
0.435 0.445
0.395 0.405
0.370 BSC
0.050 BSC
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. F
10/29/03
ISSI
PACKAGING INFORMATION
Millimeters
Inches
Symbol Min Max
Min
Max
No. Leads (N)
40
A
3.25 3.75
0.128 0.148
A1
0.64 —
0.025
—
A2
2.08 —
0.082
—
B
0.38 0.51
0.015 0.020
b
0.66 0.81
0.026 0.032
C
0.18 0.33
0.007 0.013
D
25.91 26.16
1.020 1.030
E
11.05 11.30
0.435 0.445
E1
10.03 10.29
0.395 0.405
E2
9.40 BSC
0.370 BSC
e
1.27 BSC
0.050 BSC
Millimeters
Min Max
Inches
Min Max
Millimeters
Min
Max
42
3.25 3.75
0.64 —
2.08 —
0.38 0.51
0.66 0.81
0.18 0.33
27.18 27.43
11.05 11.30
10.03 10.29
9.40 BSC
1.27 BSC
0.128 0.148
0.025
—
0.082
—
0.015 0.020
0.026 0.032
0.007 0.013
1.070 1.080
0.435 0.445
0.395 0.405
0.370 BSC
0.050 BSC
3.25 3.75
0.64 —
2.08 —
0.38 0.51
0.66 0.81
0.18 0.33
28.45 28.70
11.05 11.30
10.03 10.29
9.40 BSC
1.27 BSC
®
Inches
Min
Max
44
0.128 0.148
0.025
—
0.082
—
0.015 0.020
0.026 0.032
0.007 0.013
1.120 1.130
0.435 0.445
0.395 0.405
0.370 BSC
0.050 BSC
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
2
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. F
10/29/03
ISSI
®
PACKAGING INFORMATION
Plastic TSOP
Package Code: T (Type II)
N
N/2+1
E1
1
Notes:
1. Controlling dimension: millimieters,
unless otherwise specified.
2. BSC = Basic lead spacing
between centers.
3. Dimensions D and E1 do not
include mold flash protrusions and
should be measured from the
bottom of the package.
4. Formed leads shall be planar with
respect to one another within
0.004 inches at the seating plane.
E
N/2
D
SEATING PLANE
A
ZD
.
b
e
Symbol
Ref. Std.
No. Leads
A
A1
b
C
D
E1
E
e
L
ZD
α
Millimeters
Min
Max
Inches
Min
Max
(N)
32
—
1.20
—
0.047
0.05 0.15
0.002 0.006
0.30 0.52
0.012 0.020
0.12 0.21
0.005 0.008
20.82 21.08
0.820 0.830
10.03 10.29
0.391 0.400
11.56 11.96
0.451 0.466
1.27 BSC
0.050 BSC
0.40 0.60
0.016 0.024
0.95 REF
0.037 REF
0°
5°
0°
5°
L
α
A1
Plastic TSOP (T - Type II)
Millimeters
Inches
Min
Max
Min Max
44
—
1.20
—
0.047
0.05 0.15
0.002 0.006
0.30 0.45
0.012 0.018
0.12 0.21
0.005 0.008
18.31 18.52
0.721 0.729
10.03 10.29
0.395 0.405
11.56 11.96
0.455 0.471
0.80 BSC
0.032 BSC
0.41 0.60
0.016 0.024
0.81 REF
0.032 REF
0°
5°
0°
5°
Millimeters
Min
Max
C
Inches
Min
Max
50
—
1.20
0.05 0.15
0.30 0.45
0.12 0.21
20.82 21.08
10.03 10.29
11.56 11.96
0.80 BSC
0.40 0.60
0.88 REF
0°
5°
—
0.047
0.002 0.006
0.012 0.018
0.005 0.008
0.820 0.830
0.395 0.405
0.455 0.471
0.031 BSC
0.016 0.024
0.035 REF
0°
5°
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. F
06/18/03