SavantIC Semiconductor Product Specification BDX66 Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·High current ·DARLINGTON APPLICATIONS ·Designed for power amplification and switching applications. PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -16 A ICM Collector current(peak) -20 A IB Base current -0.25 A PT Total power dissipation 150 W Tj Junction temperature -55~200 Tstg Storage temperature -55~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX UNIT 1.17 /W SavantIC Semiconductor Product Specification BDX66 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=-0.1A ; IB=0;L=25mH VCEsat Collector-emitter saturation voltage IC=-10A ;IB=-40mA -2 V ICBO Collector cut-off current VCB=-40V; IE=0 TC=150 -1 -5 mA ICEO Collector cut-off current VCE=-30V; IB=0 -3 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -5 mA -60 UNIT V Switching times ton Turn-on time toff Turn-off time IC=-10A ; IB1=-IB2=0.04A VCC=12V ; 2 1.0 µs 3.5 µs SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BDX66