ON NST3904DXV6T5G Dual general purpose transistor Datasheet

NST3904DXV6T1,
NST3904DXV6T5
Dual General Purpose
Transistor
The NST3904DXV6T1 device is a spin-off of our popular
SOT-23/SOT-323 three-leaded device. It is designed for general
purpose amplifier applications and is housed in the SOT-563
six-leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low-power surface mount
applications where board space is at a premium.
Features
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(3)
(2)
(1)
Q1
•hFE, 100-300
•Low VCE(sat), ≤ 0.4 V
•Simplifies Circuit Design
•Reduces Board Space
•Reduces Component Count
•These are Pb-Free Devices
Q2
(4)
(5)
(6)
NST3904DXV6T1
MAXIMUM RATINGS
1
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
VCEO
40
Vdc
Collector-Base Voltage
VCBO
60
Vdc
Emitter-Base Voltage
VEBO
6.0
Vdc
IC
200
mAdc
ESD
>16000
>2000
V
Collector Current - Continuous
Electrostatic Discharge
HBM
MM
SOT-563
CASE 463A
PLASTIC
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Total Device Dissipation TA = 25°C
Derate above 25°C (Note 1)
Thermal Resistance Junction‐to‐Ambient
(Note 1)
Characteristic
(Both Junctions Heated)
Total Device Dissipation TA = 25°C
Derate above 25°C (Note 1)
Symbol
Max
Unit
PD
357
2.9
mW
mW/°C
RqJA
350
°C/W
Symbol
Max
Unit
PD
500
4.0
mW
mW/°C
Thermal Resistance, Junction‐to‐Ambient
(Note 1)
RqJA
250
°C/W
Junction and Storage Temperature Range
TJ, Tstg
-55 to
+150
°C
August, 2007 - Rev. 4
MA = Device Code
M = Date Code
G
= Pb-Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NST3904DXV6T1
1
Package
Shipping†
SOT-563* 4000/Tape & Reel
NST3904DXV6T1G SOT-563* 4000/Tape & Reel
NST3904DXV6T5
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR-4 @ Minimum Pad
© Semiconductor Components Industries, LLC, 2007
1
MA MG
G
SOT-563* 8000/Tape & Reel
NST3904DXV6T5G SOT-563* 8000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*This package is inherently Pb-Free.
Publication Order Number:
NST3904DXV6T1/D
NST3904DXV6T1, NST3904DXV6T5
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage (Note 2) (IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
-
Vdc
Collector-Base Breakdown Voltage (IC = 10 mAdc, IE = 0)
V(BR)CBO
60
-
Vdc
Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
V(BR)EBO
6.0
-
Vdc
IBL
-
50
nAdc
ICEX
-
50
nAdc
40
70
100
60
30
300
-
-
0.2
0.3
0.65
-
0.85
0.95
OFF CHARACTERISTICS
Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)
Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)
ON CHARACTERISTICS (Note 2)
hFE
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
Collector-Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
Base-Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
-
Vdc
Vdc
SMALL-SIGNAL CHARACTERISTICS
Current-Gain - Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT
300
-
MHz
Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
-
4.0
pF
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
-
8.0
pF
Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
hie
1.0
2.0
10
12
kW
Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
hre
0.5
0.1
8.0
10
X 10-4
Small-Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
hfe
100
100
400
400
-
Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
hoe
1.0
3.0
40
60
mmhos
Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k W, f = 1.0 kHz)
NF
-
5.0
4.0
dB
SWITCHING CHARACTERISTICS
Delay Time
(VCC = 3.0 Vdc, VBE = -0.5 Vdc)
td
-
35
Rise Time
(IC = 10 mAdc, IB1 = 1.0 mAdc)
tr
-
35
Storage Time
(VCC = 3.0 Vdc, IC = 10 mAdc)
ts
-
200
Fall Time
(IB1 = IB2 = 1.0 mAdc)
tf
-
50
ns
ns
2. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle ≤2.0%.
DUTY CYCLE = 2%
300 ns
10 < t1 < 500 ms
+3 V
DUTY CYCLE = 2%
+10.9 V
< 1 ns
+3 V
+10.9 V
275
275
10 k
10 k
-0.5 V
t1
0
1N916
Cs < 4 pF*
-9.1 V′
Cs < 4 pF*
< 1 ns
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time Equivalent Test Circuit
Figure 2. Storage and Fall Time Equivalent Test Circuit
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2
NST3904DXV6T1, NST3904DXV6T5
TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C
TJ = 125°C
10
CAPACITANCE (pF)
7.0
5.0
Cibo
3.0
Cobo
2.0
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30 40
REVERSE BIAS VOLTAGE (VOLTS)
Figure 3. Capacitance
500
500
IC/IB = 10
100
70
tr @ VCC = 3.0 V
50
30
20
VCC = 40 V
IC/IB = 10
300
200
t r, RISE TIME (ns)
TIME (ns)
300
200
40 V
100
70
50
30
20
15 V
10
7
5
10
2.0 V
td @ VOB = 0 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 4. Turn-On Time
Figure 5. Rise Time
IC/IB = 10
200
500
t′s = ts - 1/8 tf
IB1 = IB2
VCC = 40 V
IB1 = IB2
300
200
IC/IB = 20
t f , FALL TIME (ns)
t s′ , STORAGE TIME (ns)
IC/IB = 20
200
IC, COLLECTOR CURRENT (mA)
500
300
200
7
5
100
70
IC/IB = 20
50
IC/IB = 10
30
20
100
70
50
10
10
7
5
7
5
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
200
IC/IB = 10
30
20
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 6. Storage Time
Figure 7. Fall Time
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3
200
NST3904DXV6T1, NST3904DXV6T5
TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
14
12
SOURCE RESISTANCE = 200 W
IC = 1.0 mA
f = 1.0 kHz
SOURCE RESISTANCE = 200 W
IC = 0.5 mA
8
6
SOURCE RESISTANCE = 1.0 k
IC = 50 mA
4
SOURCE RESISTANCE = 500 W
IC = 100 mA
2
0
0.1
0.2
0.4
1.0
2.0
IC = 1.0 mA
12
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
10
IC = 0.5 mA
10
IC = 50 mA
8
IC = 100 mA
6
4
2
4.0
10
20
40
0
100
0.1
0.2
0.4
1.0
2.0
4.0
10
20
f, FREQUENCY (kHz)
RS, SOURCE RESISTANCE (k OHMS)
Figure 8. Noise Figure
Figure 9. Noise Figure
40
100
5.0
10
5.0
10
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
100
hoe, OUTPUT ADMITTANCE ( m mhos)
h fe , CURRENT GAIN
300
200
100
70
50
30
0.1
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0
50
20
10
5
2
1
10
0.1
0.2
Figure 10. Current Gain
Figure 11. Output Admittance
hre , VOLTAGE FEEDBACK RATIO (x 10 -4)
h ie , INPUT IMPEDANCE (k OHMS)
20
10
5.0
2.0
1.0
0.5
0.2
0.1
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0
10
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.1
Figure 12. Input Impedance
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
Figure 13. Voltage Feedback Ratio
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4
NST3904DXV6T1, NST3904DXV6T5
h FE, DC CURRENT GAIN (NORMALIZED)
TYPICAL STATIC CHARACTERISTICS
2.0
TJ = +125°C
VCE = 1.0 V
+25°C
1.0
0.7
-55°C
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
70
50
100
200
IC, COLLECTOR CURRENT (mA)
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
Figure 14. DC Current Gain
1.0
TJ = 25°C
0.8
IC = 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
IB, BASE CURRENT (mA)
Figure 15. Collector Saturation Region
1.0
1.2
TJ = 25°C
VBE(sat) @ IC/IB =10
0.8
VBE @ VCE =1.0 V
0.6
0.4
VCE(sat) @ IC/IB =10
qVC FOR VCE(sat)
0
-55°C TO +25°C
-0.5
-55°C TO +25°C
-1.0
+25°C TO +125°C
0.2
0
+25°C TO +125°C
0.5
COEFFICIENT (mV/ °C)
V, VOLTAGE (VOLTS)
1.0
qVB FOR VBE(sat)
-1.5
1.0
2.0
5.0
10
20
50
100
-2.0
200
0
20
40
60
80
100
120
140
160
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 16. “ON” Voltages
Figure 17. Temperature Coefficients
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5
180 200
NST3904DXV6T1, NST3904DXV6T5
PACKAGE DIMENSIONS
SOT-563, 6 LEAD
CASE 463A-01
ISSUE F
D
-X-
6
5
1
2
A
L
4
E
-Y-
3
b
e
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE MATERIAL.
C
5 PL
6
0.08 (0.003)
DIM
A
b
C
D
E
e
L
HE
HE
M
X Y
MILLIMETERS
MIN
NOM MAX
0.50
0.55
0.60
0.17
0.22
0.27
0.08
0.12
0.18
1.50
1.60
1.70
1.10
1.20
1.30
0.5 BSC
0.10
0.20
0.30
1.50
1.60
1.70
INCHES
NOM MAX
0.021 0.023
0.009 0.011
0.005 0.007
0.062 0.066
0.047 0.051
0.02 BSC
0.004 0.008 0.012
0.059 0.062 0.066
MIN
0.020
0.007
0.003
0.059
0.043
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.35
0.0531
1.0
0.0394
0.5
0.5
0.0197 0.0197
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
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NST3904DXV6T1/D
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