Transistors SMD Type NPN Silicon AF Transistors KC818(BC818) SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 For general AF applications. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 High collector current. +0.05 0.1-0.01 +0.1 0.97-0.1 High current gain. 0-0.1 +0.1 0.38-0.1 Low collector-emitter saturation voltage. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 5 V Collector current (DC) IC 800 mA power dissipation PD 310 mW Junction temperature Tj 150 Storage temperature Tstg -65 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-to-base breakdown voltage VCBO IC = 10 30 V Collector-to-emitter breakdown voltage VCEO IC = 10 mA, IB = 0 25 V 5 A,VBE = 0 Emitter-to-base breakdown voltage VEBO IE = 10 Collector cutoff current ICES VCB =25 V, VBE= 0 100 nA Emitter cutoff current IEBO VEB =4 V, IC = 0 100 nA DC current gain * hFE A, IC = 0 IC =100 mA, VCE =1 V 100 IC =300 mA, VCE =1 V 60 V 630 Collector saturation voltage * VCE(sat) IC =500 mA, IB = 50 mA 0.7 Base emitter on voltage VBE(on) VCE=1V,IC=300mA 1.2 V 12 pF Output Capacitance Cob Transition frequency * Pulsed: PW fT 350 ìs, duty cycle VCB=10V,f=1MHz IC = 10 mA, VCE =5 V, f = 50 MHz 100 V MHz 2% Marking NO. KC818-16 KC818-25 KC818-40 Marking 8GA 8GB 8GC hFE 100 250 160 400 250 630 www.kexin.com.cn 1