Sirectifier MBR845 High tjm low irrm schottky barrier diode Datasheet

MBR830 thru MBR845
High Tjm Low IRRM Schottky Barrier Diodes
Dimensions TO-220AC
A
C
A
B
C
D
E
F
G
H
J
K
L
M
N
Q
A
C(TAB)
C
A=Anode, C=Cathode, TAB=Cathode
MBR830
MBR835
MBR840
MBR845
VRRM
V
30
35
40
45
VRMS
V
21
24.5
28
31.5
Symbol
VDC
V
30
35
40
45
Characteristics
8
A
150
A
10000
V/us
IF=8A @TJ=125oC
IF=8A @TJ=25oC
IF=16A @TJ=25oC
0.57
0.70
0.84
V
@TJ=25oC
@TJ=125oC
0.1
15
mA
@TC=125oC
IFSM
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
Voltage Rate Of Change (Rated VR)
VF
IR
Maximum DC Reverse Current
At Rated DC Blocking Voltage
Typical Thermal Resistance (Note 2)
3.0
CJ
Typical Junction Capacitance (Note 3)
250
TJ
Operating Temperature Range
ROJC
TSTG
Milimeter
Min.
Max.
12.70 14.73
14.23 16.51
9.66 10.66
3.54
4.08
5.85
6.85
2.54
3.42
1.15
1.77
6.35
0.64
0.89
4.83
5.33
3.56
4.82
0.38
0.56
2.04
2.49
0.64
1.39
Unit
Maximum Average Forward Rectified Current
Maximum Forward
Voltage (Note 1)
Inches
Min.
Max.
0.500 0.580
0.560 0.650
0.380 0.420
0.139 0.161
2.300 0.420
0.100 0.135
0.045 0.070
0.250
0.025 0.035
0.190 0.210
0.140 0.190
0.015 0.022
0.080 0.115
0.025 0.055
Maximum Ratings
I(AV)
dv/dt
Dim.
Storage Temperature Range
o
C/W
pF
-55 to +150
o
-55 to +175
o
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
FEATURES
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
* RoHS compliant
P1
MECHANICAL DATA
* Case: TO-220AC molded plastic
* Polarity: As marked on the body
* Weight: 2 grams
* Mounting position: Any
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected]
www.sirectifier.com
C
C
MBR830 thru MBR845
High Tjm Low IRRM Schottky Barrier Diodes
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD CURRENT
AMPERES
FIG.1 - FORWARD CURRENT DERATING CURVE
10
150
125
8
100
6
4
RESISTIVE OR
INDUCTIVE LOAD
2
0
25
75
50
100
125
150
175
75
50
25
0
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
1
2
5
CASE TEMPERATURE , C
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
50
100
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
100
100
INSTANTANEOUS FORWARD CURRENT ,(A)
INSTANTANEOUS REVERSE CURRENT ,(mA)
20
10
NUMBER OF CYCLES AT 60Hz
TJ = 125 C
10
1.0
0.1
0.01
TJ = 25 C
0.001
10
1.0
TJ = 25 C
PULSE WIDTH 300us
2% Duty cycle
0.1
0
20
40
60
80
100
140
120
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)
FIG.5 - TYPICAL JUNCTION CAPACITANCE
CAPACITANCE , (pF)
1000
100
TJ = 25 C, f= 1MHz
10
0.1
1
4
10
100
REVERSE VOLTAGE , VOLTS
P2
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected]
www.sirectifier.com
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