SMBT2907A/MMBT2907A PNP Silicon Switching Transistor 3 High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary type: SMBT2222A/ MMBT2222A (NPN) 2 1 Type Marking SMBT2907A/MMBT2907A s2F 1=B Pin Configuration 2=E 3=C VPS05161 Package SOT23 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 60 Collector-base voltage VCBO 60 Emitter-base voltage VEBO 5 DC collector current IC 600 mA Total power dissipation, TS = 77 °C Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg Value Unit V -65 ... 150 Thermal Resistance Junction - soldering point 1) RthJS 220 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jun-12-2002 SMBT2907A/MMBT2907A Electrical Characteristicsn at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. V(BR)CEO 60 - - V(BR)CBO 60 - - V(BR)EBO 5 - - ICBO - - 10 nA ICBO - - 10 µA IEBO - - 10 nA DC Characteristics Collector-emitter breakdown voltage V IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 50 V, IE = 0 Collector cutoff current VCB = 50 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 3 V, IC = 0 - hFE DC current gain 1) IC = 100 µA, VCE = 10 V 75 - - IC = 1 mA, VCE = 10 V 100 - - IC = 10 mA, VCE = 10 V 100 - - IC = 150 mA, VCE = 10 V 100 - 300 IC = 500 mA, VCE = 10 V 50 - V VCEsat Collector-emitter saturation voltage1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA - - 0.4 - - 1.6 - - 1.3 - - 2.6 VBEsat Base-emitter saturation voltage 1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 1) Pulse test: t ≤=300µs, D = 2% 2 Jun-12-2002 SMBT2907A/MMBT2907A Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter Unit min. typ. max. 200 - - MHz Ccb - - 8 pF Ceb - - 30 td - - 10 tr - - 40 tstg - - 80 tf - - 30 AC Characteristics fT Transition frequency IC = 20 mA, VCE = 20 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Delay time ns VCC = 30 V, IC = 150 mA, IB1 = 15 mA, VBE(off) = 0.5 V Rise time VCC = 30 V, IC = 150 mA, IB1 = 15 mA, VBE(off) = 0.5 V Storage time VCC = 30 V, IC = 150 mA, IB1 =IB2 = 15mA Fall time VCC = 30 V, IC = 150 mA, IB1 =IB2 = 15mA 3 Jun-12-2002 SMBT2907A/MMBT2907A Test circuits Delay and rise time -30 V Input Z 0 = 50 Ω t r < 2ns 0 -16 V 200 Ω Osc. t r < 5 ns 1 kΩ 50 Ω 200 ns EHN00053 Storage and fall time -6 V +15 V Input Z 0 = 50 Ω t r < 2 ns 0 -30 V 1 kΩ 1 kΩ 37 Ω Osc. t r < 5 ns 50 Ω 200 ns EHN00054 Oscillograph: R > 100Ω, C < 12pF, tr < 5ns 4 Jun-12-2002 SMBT2907A/MMBT2907A Total power dissipation Ptot = f(TS) Collector-base capacitance CCB = f (VCB) f = 1MHz 10 2 pF 360 mW 300 Ccb SMBT 2907/A EHP00747 5 P tot 270 240 210 10 1 180 150 5 120 90 60 30 0 0 15 30 45 60 75 90 105 120 10 0 10 -1 °C 150 TS 5 10 0 5 10 1 Transition frequency fT = f (IC) Ptotmax / PtotDC = f (tp ) VCE = 5V SMBT 2907/A EHP00748 Ptot max 5 Ptot DC 10 3 MHz tp tp D= T fT T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 10 2 VCB Permissible pulse load 10 3 5 V SMBT 2907/A EHP00749 5 10 2 5 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 1 10 0 0 5 10 1 5 10 2 mA 5 10 3 ΙC tp 5 Jun-12-2002 SMBT2907A/MMBT2907A Saturation voltage IC = f (VBEsat , VCEsat) Delay time t d = f (IC) hFE = 10 Rise time tr = f (IC) 10 3 SMBT 2907/A EHP00750 10 3 SMBT 2907/A ns mA ΙC V CE 10 2 t r, t d V BE EHP00751 VBE = 0 V, VCC = 10 V, VBE = 20 V, VCC = 30 V 5 tr 5 10 2 10 1 td 5 5 10 0 5 10 -2 10 -1 0 0.2 0.4 0.6 0.8 1.0 1.2 V 10 1 0 10 1.6 5 10 1 VBE sat , VCE sat Storage time tstg = f(IC) 10 3 t stg 5 10 2 mA 5 10 3 ΙC Fall time t f = f (IC) SMBT 2907/A EHP00752 10 3 ns tf 5 SMBT 2907/A EHP00753 ns VCC = 30 V 5 h FE = 20 h FE = 10 10 2 5 10 2 h FE = 10 5 h FE = 20 10 1 0 10 5 10 1 10 1 0 10 5 10 2 mA 5 10 3 5 10 1 5 10 2 mA 5 10 3 ΙC ΙC 6 Jun-12-2002 SMBT2907A/MMBT2907A DC current gain hFE = f (IC ) VCE = 5V 10 3 h FE SMBT 2907/A EHP00754 5 150 ˚C 25 ˚C 10 2 -50 ˚C 5 10 1 -1 10 10 0 10 1 10 2 mA 10 3 ΙC 7 Jun-12-2002