QFET ® FQD1N60C / FQU1N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. • • • • • • 1A, 600V, RDS(on) = 11.5Ω @VGS = 10 V Low gate charge ( typical 4.8nC) Low Crss ( typical 3.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability • RoHS Compliant D ! D ● ◀ G S FQD Series G! I-PAK D-PAK G D S ▲ ● ● FQU Series ! S Absolute Maximum Ratings Symbol VDSS ID TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQD1N60C / FQU1N60C 600 Units V 1 A - Continuous (TC = 100°C) 0.6 A 4 A IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 1 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C)* (Note 1) 2.8 4.5 2.5 mJ V/ns W 28 0.22 -55 to +150 W W/°C °C 300 °C dv/dt PD TJ, TSTG TL - Pulsed (Note 1) (Note 3) Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds ± 30 V 33 mJ Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case Typ -- Max 4.53 Units °C/W RθJA Thermal Resistance, Junction-to-Ambient* -- 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 110 °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2009 Fairchild Semiconductor Corporation Rev. A1, January 2009 FQD1N60C / FQU1N60C January 2009 Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 600 -- -- V -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.6 IDSS IGSSF IGSSR VDS = 600 V, VGS = 0 V -- -- 1 µA VDS = 480 V, TC = 125°C -- -- 10 µA Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V -- 9.3 11.5 Ω -- 0.75 -- S -- 130 170 pF -- 19 25 pF -- 3.5 4.5 pF -- 7 24 ns -- 21 52 ns -- 13 36 ns Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 0.5 A gFS Forward Transconductance VDS = 40 V, ID = 0.5 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 300 V, ID = 1.1 A, RG = 25 Ω (Note 4, 5) VDS = 480 V, ID = 1.1 A, VGS = 10 V (Note 4, 5) -- 27 64 ns -- 4.8 6.2 nC -- 0.7 -- nC -- 2.7 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 1 A ISM -- -- 4 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 0.5 A Drain-Source Diode Forward Voltage -- -- 1.4 V trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 1.1 A, dIF / dt = 100 A/µs (Note 4) -- 190 -- ns -- 0.53 -- µC Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 59 mH, IAS = 1.1 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 1.1 A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2009 Fairchild Semiconductor Corporation Rev. A1. January 2009 FQD1N60C / FQU1N60C Electrical Characteristics FQD1N60C / FQU1N60C Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : ID, Drain Current [A] 0 10 ID, Drain Current [A] 0 10 -1 10 o 150 C o -55 C o 25 C ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 40V 2. 250μ s Pulse Test -1 10 -2 10 -1 0 10 1 10 2 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS = 10V 20 15 VGS = 20V 10 5 ※ Note : TJ = 25℃ 0 0.0 0.5 1.0 1.5 2.0 2.5 0 10 150℃ ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test 25℃ -1 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 ID, Drain Current [A] VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 250 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 200 Ciss Capacitance [pF] 150 Coss 100 ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz Crss 50 12 VDS = 120V 10 VGS, Gate-Source Voltage [V] RDS(ON) [Ω ], Drain-Source On-Resistance 25 I DR , Reverse Drain Current [A] 30 VDS = 300V 8 VDS = 480V 6 4 2 ※ Note : ID = 1A 0 -1 10 0 10 1 10 VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics ©2009 Fairchild Semiconductor Corporation 0 0 1 2 3 4 5 6 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics Rev. A1, January 2009 FQD1N60C / FQU1N60C Typical Characteristics (Continued) 1.2 3.0 BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 RDS(ON) , (Normalized) Drain-Source On-Resistance 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μ A 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 0.5 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs Temperature Figure 8. On-Resistance Variation vs Temperature o 1.2 Operation in This Area is Limited by R DS(on) 1 10 1.0 100 µs ID, Drain Current [A] ID, Drain Current [A] 0.8 1 ms 0 10 10 ms 100 ms DC 0.6 0.4 -1 10 ※ Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0.2 -2 10 0 1 10 2 10 0.0 25 3 10 10 50 75 100 125 150 TC, Case Temperature [℃] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs Case Temperature Z θ JC ( t), T h e rm a l R e s p o n s e VDS, Drain-Source Voltage [V] D = 0 .5 10 0 ※ N o te s : 1 . Z θ J C ( t) = 4 .5 3 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 / t 2 3 . T J M - T C = P D M * Z θ J C ( t) 0 .2 0 .1 PDM 0 .0 5 t1 0 .0 2 10 t2 0 .0 1 -1 s in g le p u ls e 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u r a tio n [s e c ] Figure 11. Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation Rev. A1, January 2009 FQD1N60C / FQU1N60C Gate Charge Test Circuit & Waveform 50KΩ 200nF 12V VGS Same Type as DUT Qg 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT 10V 10% td(on) tr td(off) t on t off tf Unclamped Inductive Switching Test Circuit & Waveforms VDS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L BVDSS IAS ID RG VDD DUT 10V tp ©2009 Fairchild Semiconductor Corporation ID (t) VDS (t) VDD tp Time Rev. A1, January 2009 FQD1N60C / FQU1N60C Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2009 Fairchild Semiconductor Corporation Rev. A1, January 2009 FQD1N60C / FQU1N60C Mechanical Dimensions TO-252 (DPAK) (FS PKG Code 36) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: millimeters Part Weight per unit (gram): 0.33 ©2009 Fairchild Semiconductor Corporation Rev. A1, January 2009 FQD1N60C / FQU1N60C Mechanical Dimensions I - PAK Dimensions in Millimeters ©2009 Fairchild Semiconductor Corporation Rev. A1, January 2009 FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ F-PFS™ ® tm PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW /W /kW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ ® tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ μSerDes™ FQD1N60C / FQU1N60C TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ The Power Franchise® * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I37 ©2009 Fairchild Semiconductor Corporation Rev. A1. January 2009