Fairchild FDS6690AS 30v n-channel powertrench syncfet Datasheet

FDS6690AS
30V N-Channel PowerTrench® SyncFET™
General Description
Features
The FDS6690AS is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
and low gate charge.
The FDS6690AS
RDS(ON)
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDS6690AS as the low-side switch in a
synchronous rectifier is close to the performance of the
FDS6690A in parallel with a Schottky diode.
•
10 A, 30 V.
RDS(ON) max= 12 mΩ @ VGS = 10 V
RDS(ON) max= 15 mΩ @ VGS = 4.5 V
•
Includes SyncFET Schottky diode
•
Low gate charge (16nC typical)
•
High performance trench technology for extremely low
RDS(ON)
Applications
•
High power and current handling capability
• DC/DC converter
• Low side notebooks
D
D
D
D
SO-8
S
S
S
G
Absolute Maximum Ratings
Symbol
5
4
6
3
7
2
8
1
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
10
A
– Continuous
(Note 1a)
– Pulsed
PD
Power Dissipation for Single Operation
50
(Note 1a)
2.5
(Note 1b)
1.2
(Note 1c)
TJ, TSTG
W
1
–55 to +150
°C
(Note 1a)
50
°C/W
(Note 1)
25
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6690AS
FDS6690AS
13’’
12mm
2500 units
FDS6690AS
FDS6690AS_NL (Note 4)
13’’
12mm
2500 units
©2004 Fairchild Semiconductor Corporation
FDS6690AS Rev A(X)
FDS6690AS
December 2004
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
IGSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 1 mA
Zero Gate Voltage Drain Current
VDS = 24 V,
VGS = 0 V
500
µA
Gate–Body Leakage
VGS = ±20 V,
VDS = 0 V
±100
nA
3
V
On Characteristics
30
V
28
ID = 1 mA, Referenced to 25°C
mV/°C
(Note 2)
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
VDS = VGS, ID = 1 mA
1
1.6
ID(on)
On–State Drain Current
VGS = 10 V,
VDS = 5 V
gFS
Forward Transconductance
VDS = 15 V,
ID = 10 A
45
S
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
910
pF
270
pF
100
pF
Ω
ID = 1 mA, Referenced to 25°C
–3
VGS = 10 V,
ID = 10 A
ID = 8.5 A
VGS = 4.5 V,
VGS=10 V, ID =10A, TJ=125°C
10
12
15
mV/°C
12
15
19
50
mΩ
A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
VGS = 15 mV,
f = 1.0 MHz
2.0
8
16
ns
VDS = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
5
10
ns
(Note 2)
25
40
ns
6
12
ns
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
15
27
ns
tf
Turn–Off Fall Time
8
16
ns
Qg(TOT)
Total Gate Charge at Vgs=10V
16
23
nC
9
13
VDS = 15 V,
VGS = 4.5 V,
ID = 1 A,
RGEN = 6 Ω
11
20
ns
11
20
ns
Qg
Total Gate Charge at Vgs=5V
Qgs
Gate–Source Charge
2.3
nC
Qgd
Gate–Drain Charge
3.0
nC
VDD = 15 V,
ID = 10 A
nC
FDS6690AS Rev A (X)
FDS6690AS
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
3.5
A
0.7
V
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Trr
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
IF = 10A,
Qrr
Diode Reverse Recovery Charge
diF/dt = 300 A/µs
VGS = 0 V,
IS = 3.5 A
(Note 2)
(Note 3)
0.6
16
nS
9
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°/W when
mounted on a 1 in2
pad of 2 oz copper
b) 105°/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. See “SyncFET Schottky body diode characteristics” below.
4. FDS6690AS_NL is a lead free product. The FDS6690AS_NL marking will appear on the reel label.
FDS6690AS Rev A (X)
FDS6690AS
Electrical Characteristics
FDS6690AS
Typical Characteristics
50
2.2
VGS = 10V
VGS = 4.0V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
4.0V
ID, DRAIN CURRENT (A)
40
6.0V
4.5V
30
3.0V
20
10
2.5V
1.8
3.5V
1.4
4.5V
0
6.0V
10V
1
0.5
1
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
0
2
Figure 1. On-Region Characteristics.
10
20
30
ID, DRAIN CURRENT (A)
40
50
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.06
1.6
ID = 10A
VGS = 10V
1.45
ID = 5A
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
5.0V
0.6
0
1.3
1.15
1
0.85
0.7
0.05
0.04
0.03
o
TA = 125 C
0.02
0.01
TA = 25oC
0
-50
-25
0
25
50
75
100
o
TJ, JUNCTION TEMPERATURE ( C)
125
150
2
Figure 3. On-Resistance Variation with
Temperature.
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
50
10
VGS = 0V
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
ID, DRAIN CURRENT (A)
4.0V
40
30
20
o
TA = 125 C
o
-55 C
10
25oC
0
1
TA = 125oC
25oC
0.1
-55oC
0.01
0.001
1
1.5
2
2.5
3
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4
0
0.2
0.4
0.6
VSD, BODY DIODE FORWARD VOLTAGE (V)
0.8
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6690AS Rev A (X)
1400
f = 1MHz
VGS = 0 V
ID =10A
1200
8
VDS = 10V
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
10
20V
6
15V
4
2
1000
Ciss
800
600
Coss
400
200
Crss
0
0
0
3
6
9
12
15
Qg, GATE CHARGE (nC)
18
0
21
Figure 7. Gate Charge Characteristics.
10
15
20
25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics.
100
50
P(pk), PEAK TRANSIENT POWER (W)
RDS(ON) LIMIT
100µs
1ms
10
10ms
100ms
1s
10s
1
DC
VGS = 10V
SINGLE PULSE
o
RθJA = 125 C/W
0.1
TA = 25oC
0.01
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
SINGLE PULSE
RθJA = 125°C/W
TA = 25°C
40
30
20
10
0
0.001
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
ID, DRAIN CURRENT (A)
5
0.01
0.1
1
t1, TIME (sec)
10
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
RθJA = 125 °C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6690AS Rev A (X)
FDS6690AS
Typical Characteristics
FDS6690AS
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Schottky barrier diodes exhibit significant leakage
at high temperature and high reverse voltage.
This will increase the power in the device.
IDSS, REVERSE LEAKAGE CURRENT (A)
0.1
3A/DIV
Fairchild’s SyncFET process embeds a Schottky
diode in parallel with PowerTrench MOSFET.
This diode exhibits similar characteristics to a
discrete external Schottky diode in parallel with a
MOSFET. Figure 12 shows the reverse recovery
characteristic of the FDS6690AS.
0.01
TA = 125oC
0.001
TA = 100oC
0.0001
0.00001
TA = 25oC
0.000001
0
5
10
15
20
VDS, REVERSE VOLTAGE (V)
25
30
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
10nS/DIV
Figure 12. FDS6690AS SyncFET body
diode reverse recovery characteristic.
3A/DIV
For comparison purposes, Figure 13 shows the
reverse recovery characteristics of the body diode
of an equivalent size MOSFET produced without
SyncFET (FDS6690A).
0V
10nS/DIV
Figure 13. Non-SyncFET (FDS6690A)
body diode reverse recovery
characteristic.
FDS6690AS Rev A (X)
FDS6690AS
Typical Characteristics
L
VDS
BVDSS
tP
VGS
RGE
+
DUT
VGS
VDS
IAS
VDD
VDD
-
0V
tp
vary tP to obtain
required peak IAS
IAS
0.01Ω
tAV
Figure 15. Unclamped Inductive Load Test
Circuit
Figure 16. Unclamped Inductive
Waveforms
Drain Current
Same type as
+
50kΩ
10V
-
10µF
+
1µF
VDD
-
VGS
QG(TOT)
10V
DUT
QGD
QGS
VGS
Ig(REF
Charge, (nC)
Figure 17. Gate Charge Test Circuit
VDS
tON
td(ON)
RL
VDS
tOFF
td(OFF
tf
)
tr
90%
90%
+
VGS
RGEN
Figure 18. Gate Charge Waveform
VDD
DUT
VGSPulse Width ≤ 1µs
Duty Cycle ≤ 0.1%
Figure 19. Switching Time Test
Circuit
-
10%
0V
90%
VGS
0V
10%
50%
50%
10%
Pulse Width
Figure 20. Switching Time Waveforms
FDS6690AS Rev A (X)
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ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I15
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