WINNERJOIN BCW60C Sot-23 plastic-encapsulate transistor Datasheet

RoHS
BCW60C
SOT-23 Plastic-Encapsulate Transistors
BCW60C
1. BASE
2. EMITTER
FEATURES
3. COLLECTOR
1. 0
Power dissipation
W (Tamb=25℃)
TJ, Tstg: -55℃ to +150℃
Parameter
Symbol
V(BR)CBO
Collector-emitter breakdown voltage
V(BR)CEO
Collector cut-off current
Collector cut-off current
DC current gain
J
E
E
Collector-emitter saturation voltage
W
Base-emitter saturation voltage
Test
conditions
MIN
0. 4
UNIT
32
V
Ic= 1mA, IB=0
32
V
V(BR)EBO
IE=10µA, IC=0
5
V
ICBO
VCB=32V, IE=0
0.02
µA
IEBO
VEB=4V, IC=0
0.02
µA
hFE1
VCE=5V, IC= 10µA
40
hFE2
VCE=5V, IC= 2mA
250
hFE3
VCE=5V, IC= 50mA
100
460
IC=10mA, IB=0.25mA
0.35
V
IC=50mA, IB=1.25mA
0.55
V
IC=10mA, IB=0.25mA
0.85
V
IC=50mA, IB=1.25mA
1.05
V
0.75
V
VCE(sat)
VBE(sat)
Base-emitter voltage
VBE
VCE=5V, IC= 2mA
0.55
Transition frequency
fT
VCE= 5V, IC=10mA, f=100MHz
100
Cob
VCB= 10V, IE=0, f=1MHz
Output capacitance
MAX
Ic= 10µA, IE=0
C
E
L
Emitter-base breakdown voltage
O
N
Unit: mm
unless otherwise specified)
R
T
Collector-base breakdown voltage
IC
C
0. 95
2. 9
Collector current
ICM:
0.1 A
Collector-base voltage
V(BR)CBO:
32 V
Operating and storage junction temperature range
ELECTRICAL CHARACTERISTICS (Tamb=25℃
O
2. 4
1. 3
1. 9
0.25
0. 95
PCM:
Marking
D
T
,. L
SOT-23
TRANSISTOR (NPN)
MHz
5
pF
AC
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:[email protected]
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