RoHS BCW60C SOT-23 Plastic-Encapsulate Transistors BCW60C 1. BASE 2. EMITTER FEATURES 3. COLLECTOR 1. 0 Power dissipation W (Tamb=25℃) TJ, Tstg: -55℃ to +150℃ Parameter Symbol V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Collector cut-off current Collector cut-off current DC current gain J E E Collector-emitter saturation voltage W Base-emitter saturation voltage Test conditions MIN 0. 4 UNIT 32 V Ic= 1mA, IB=0 32 V V(BR)EBO IE=10µA, IC=0 5 V ICBO VCB=32V, IE=0 0.02 µA IEBO VEB=4V, IC=0 0.02 µA hFE1 VCE=5V, IC= 10µA 40 hFE2 VCE=5V, IC= 2mA 250 hFE3 VCE=5V, IC= 50mA 100 460 IC=10mA, IB=0.25mA 0.35 V IC=50mA, IB=1.25mA 0.55 V IC=10mA, IB=0.25mA 0.85 V IC=50mA, IB=1.25mA 1.05 V 0.75 V VCE(sat) VBE(sat) Base-emitter voltage VBE VCE=5V, IC= 2mA 0.55 Transition frequency fT VCE= 5V, IC=10mA, f=100MHz 100 Cob VCB= 10V, IE=0, f=1MHz Output capacitance MAX Ic= 10µA, IE=0 C E L Emitter-base breakdown voltage O N Unit: mm unless otherwise specified) R T Collector-base breakdown voltage IC C 0. 95 2. 9 Collector current ICM: 0.1 A Collector-base voltage V(BR)CBO: 32 V Operating and storage junction temperature range ELECTRICAL CHARACTERISTICS (Tamb=25℃ O 2. 4 1. 3 1. 9 0.25 0. 95 PCM: Marking D T ,. L SOT-23 TRANSISTOR (NPN) MHz 5 pF AC WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]