MOTOROLA MRF184R1 N-channel enhancement-mode lateral mosfet Datasheet

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SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for large–signal, common source amplifier applications in 28
volt base station equipment.
• Guaranteed Performance @ 945 MHz, 28 Volts
Output Power = 60 Watts
Power Gain = 11.5 dB
Efficiency = 53%
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal
Impedance Parameters
• S–Parameter Characterization at High Bias Levels
• 100% Tested for Load Mismatch Stress at all Phase
Angles with 5:1 VSWR @ 28 Vdc, 945 MHz, 60 Watts CW
1.0 GHz, 60 W, 28 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B–05, STYLE 1
NI–360
MRF184R1
• In Tape and Reel. 500 Units per 32 mm, 13 inch Reel.
ARCHIVED 2005
CASE 360C–05, STYLE 1
NI–360S
MRF184SR1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
65
Vdc
Gate–Source Voltage
VGS
±20
Vdc
Drain Current — Continuous
ID
7
Adc
Total Device Dissipation @ TC = 70°C
Derate above 70°C
PD
118
0.9
Watts
W/°C
Storage Temperature Range
Tstg
– 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Max
Unit
RθJC
1.1
°C/W
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
V(BR)DSS
65
–
–
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
–
–
1
µAdc
Gate–Source Leakage Current
(VGS = 20 Vd, VDS = 0 Vdc)
IGSS
–
–
1
µAdc
Characteristic
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 1 mAdc)
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 10
MOTOROLA
RF DEVICE DATA
 Motorola,
Inc. 2002
MRF184R1 MRF184SR1
1
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
ELECTRICAL CHARACTERISTICS – continued (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Gate Threshold Voltage
(VDS = 10 V, ID = 200 µA)
VGS(th)
2
3
4
Vdc
Gate Quiescent Voltage
(VDS = 28 V, ID = 100 mA)
VGS(Q)
3
4
5
Vdc
Drain–Source On–Voltage
(VGS = 10 V, ID = 3 A)
VDS(on)
–
0.65
0.8
Vdc
Forward Transconductance
(VDS = 10 V, ID = 3 A)
gfs
2.2
2.6
–
s
Input Capacitance
(VDS = 28 V, VGS = 0 V, f = 1 MHz)
Ciss
–
83
–
pF
Output Capacitance
(VDS = 28 V, VGS = 0 V, f = 1 MHz)
Coss
–
44
–
pF
Reverse Transfer Capacitance
(VDS = 28 V, VGS = 0 V, f = 1 MHz)
Crss
–
4.3
–
pF
Common Source Power Gain
(VDD = 28 V, Pout = 60 W, f = 945 MHz, IDQ = 100 mA)
Gps
11.5
13.5
–
dB
Drain Efficiency
(VDD = 28 V, Pout = 60 W, f = 945 MHz, IDQ = 100 mA)
η
53
60
–
%
Load Mismatch
(VDD = 28 V, Pout = 60 W, IDQ = 100 mA, f = 945 MHz,
Load VSWR 5:1 at all Phase Angles)
ψ
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
ARCHIVED 2005
FUNCTIONAL CHARACTERISTICS
No Degradation in Output Power
B1
C1
C2, C3, C6, C9
C4
C5, C12
C7, C10
C8, C11
C13
Short RF Bead Fair Rite–2743019447
18 pF Chip Capacitor
43 pF Chip Capacitor
100 pF Chip Capacitor
10 µF, 50 Vdc Electrolytic Capacitor
1000 pF Chip Capacitor
0.1 µF, 50 Vdc Chip Capacitor
250 µF, 50 Vdc Electrolytic Capacitor
L1
R1
R2
R3
R4
TL1–TL4
Ckt Board
5 Turns, 20 AWG, IDIA 0.126″
10 kΩ, 1/4 W Resistor
13 kΩ, 1/4 W Resistor
1.0 kΩ, 1/4 W Chip Resistor
4 x 39 Ω, 1/8 W Chip Resistor
Microstrip Line See Photomaster
1/32″ Glass Teflon, εr = 2.55
ARLON–GX–0300–55–22
Figure 1. MRF184 Test Circuit Schematic
MRF184R1 MRF184SR1
2
MOTOROLA RF DEVICE DATA
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
()
7& () +
() +
() , &'
- , %./
- , * %./
0 , 1"
( !"# (
()
0 , 1"
()
1"
1"
()
()
*
Figure 2. Intermodulation Distortion Products
versus Output Power
!"#
23 "!&#
0 , 1"
1"
1"
1"
, &'
- , %./
!"#
23
, &'
0 , 1"
- , %./
Figure 4. Power Gain versus Output Power
!"#
* * 6 " !#
Figure 6. Output Power versus Supply Voltage
MOTOROLA RF DEVICE DATA
*
6" .
, &'
45 , * - , %./
0 , 1"
- , %./
*
45 !"#
*
Figure 5. Output Power versus Input Power
45 , * !"#
!"# Figure 3. Intermodulation Distortion versus
Output Power
ARCHIVED 2005
, &'
- , %./
- , * %./
1"
23 "!&#
()
() % %"!&'#
% %"!&'#
TYPICAL CHARACTERISTICS
*
*
*
*
" ( " !#
*
Figure 7. Output Power versus Gate Voltage
MRF184R1 MRF184SR1
3
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
TYPICAL CHARACTERISTICS
*
45 , * " !"#
!"#
, &'
0 , 1"
* * *
6" .
*
, &'
*
- 0 6 !%./#
Figure 8. Output Power versus Frequency
" " !#
Figure 9. Drain Current versus Gate Voltage
*
" !"%#
733
"( " !#
*
*
*
9 , °
, °
Figure 10. Capacitance versus Voltage
Figure 11. DC Safe Operating Area
*
η
*
23 "!&#
*
*
*
*
*
*
" " !&'#
23
*
, &'
0 , 1"
, !#
*
9 , °
, °
" " !&'#
Figure 12. DC Safe Operating Area
MRF184R1 MRF184SR1
4
- 0 6 !%./#
* η 6!8#
, &'
- , * %./
*
*
*
33
*
*
""" !2#
433
" !"%#
ARCHIVED 2005
Figure 13. Performance in Broadband Circuit
MOTOROLA RF DEVICE DATA
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
!&1#
"% "
7& (
, &'
, * "
- , %./
- , * %./
()
()
() 45 !&1#
Figure 14. Class A Third Order Intercept Point
ARCHIVED 2005
MRF184
Figure 15. Component Parts Layout
MOTOROLA RF DEVICE DATA
MRF184R1 MRF184SR1
5
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
:45
- , %./
- , %./
: , Ω
ARCHIVED 2005
:;
, &' 0 , 1" , f
MHz
Zin
Ohms
* < =*
*
( =*
*
*
( =*
Zin
< =*
ZOL*
Ohms
* < =*
* ( =*
* < =*
* ( =* * < =*
*
( =* = Conjugate of source impedance.
Zout = Conjugate of the load impedance at a given output
power, voltage, frequency and efficiency.
Note: ZOL* was chosen based on tradeoffs between gain, drain efficiency and device stability.
Figure 16. Series Equivalent Input and Output Impedance
MRF184R1 MRF184SR1
6
MOTOROLA RF DEVICE DATA
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
Table 1. Common Source S–Parameters (VDS = 13.5 V)
ARCHIVED 2005
ID = 2.0 A
S11
S21
S12
S22
f
MHz
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
20
0.916
179
10.88
80
0.014
–22
0.843
175
30
0.917
178
9.26
79
0.014
–25
0.847
174
40
0.918
177
8.10
78
0.015
–29
0.852
174
50
0.919
176
7.16
77
0.015
–33
0.853
174
100
0.919
175
4.57
75
0.015
–35
0.855
173
150
0.920
174
3.34
67
0.015
–38
0.865
173
200
0.921
173
2.60
62
0.014
–41
0.867
173
250
0.922
173
2.11
59
0.014
–45
0.877
173
300
0.928
172
1.77
55
0.014
–49
0.881
173
350
0.938
172
1.50
50
0.013
–55
0.887
173
400
0.941
171
1.28
47
0.013
–59
0.895
173
450
0.942
171
1.12
44
0.012
–62
0.896
173
500
0.943
171
1.00
41
0.012
–68
0.898
172
550
0.945
171
0.91
38
0.010
–75
0.899
172
600
0.947
171
0.80
35
0.010
–79
0.903
172
650
0.948
171
0.71
33
0.009
–85
0.905
172
700
0.955
170
0.65
30
0.008
–88
0.909
172
750
0.959
170
0.60
28
0.008
–95
0.919
172
800
0.962
169
0.55
25
0.007
–102
0.922
172
850
0.963
169
0.50
23
0.007
–111
0.923
171
900
0.964
169
0.45
21
0.007
–118
0.926
171
950
0.968
169
0.43
19
0.006
–125
0.929
171
1000
0.970
169
0.39
18
0.006
–129
0.933
171
1050
0.971
168
0.36
17
0.005
–134
0.935
171
1100
0.972
168
0.34
14
0.005
–142
0.936
170
1150
0.973
168
0.32
13
0.005
–149
0.938
170
1200
0.974
167
0.29
12
0.006
–156
0.940
169
1250
0.976
167
0.28
10
0.007
–162
0.943
169
1300
0.975
167
0.26
9
0.008
–173
0.945
168
1350
0.972
166
0.25
8
0.009
–178
0.946
167
1400
0.969
166
0.24
7
0.011
175
0.947
167
1450
0.965
165
0.22
6
0.012
172
0.948
167
1500
0.959
164
0.21
5
0.013
169
0.950
167
MOTOROLA RF DEVICE DATA
MRF184R1 MRF184SR1
7
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
Table 2. Common Source S–Parameters (VDS = 28 V)
ID = 2.0 A
ARCHIVED 2005
f
MHz
S11
S21
S12
S22
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
20
0.912
–170
16.01
84
0.016
–12
0.746
178
30
0.917
–173
13.73
82
0.015
–15
0.755
177
40
0.918
–174
12.02
80
0.014
–17
0.759
177
50
0.919
–176
10.62
78
0.013
–20
0.766
176
100
0.922
–178
6.76
71
0.012
–22
0.775
176
150
0.930
177
4.92
65
0.011
–25
0.791
176
200
0.931
176
3.82
60
0.010
–27
0.791
176
250
0.933
175
3.07
55
0.009
–29
0.793
176
300
0.941
174
2.53
51
0.009
–31
0.826
176
350
0.943
173
2.14
45
0.008
–35
0.834
176
400
0.945
172
1.83
41
0.008
–45
0.853
176
450
0.948
172
1.58
38
0.007
–52
0.858
176
500
0.950
172
1.39
35
0.007
–57
0.865
176
550
0.955
172
1.24
32
0.007
–61
0.876
176
600
0.960
172
1.10
29
0.006
–64
0.882
176
650
0.965
171
0.96
26
0.006
–68
0.888
175
700
0.967
171
0.89
24
0.006
–71
0.894
175
750
0.970
171
0.80
20
0.005
–73
0.904
175
800
0.973
170
0.73
18
0.005
–78
0.906
175
850
0.974
169
0.66
17
0.004
–83
0.908
174
900
0.975
169
0.61
13
0.004
–91
0.909
173
950
0.976
169
0.57
12
0.004
–94
0.915
173
1000
0.978
168
0.52
11
0.004
–96
0.916
173
1050
0.979
168
0.47
9
0.005
–102
0.919
172
1100
0.980
168
0.43
7
0.005
–115
0.924
172
1150
0.980
167
0.41
6
0.006
–119
0.931
171
1200
0.979
167
0.38
5
0.006
–125
0.934
170
1250
0.978
167
0.36
2
0.006
–139
0.935
170
1300
0.974
167
0.34
1
0.007
–148
0.936
170
1350
0.971
166
0.32
0
0.007
–156
0.937
169
1400
0.970
165
0.31
–1
0.007
–165
0.938
169
1450
0.969
165
0.30
–2
0.008
–171
0.939
169
1500
0.965
164
0.27
–3
0.008
–178
0.946
169
MRF184R1 MRF184SR1
8
MOTOROLA RF DEVICE DATA
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
ARCHIVED 2005
NOTES
MOTOROLA RF DEVICE DATA
MRF184R1 MRF184SR1
9
Archived 2005
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ARCHIVED 2005
NOTES
MRF184R1 MRF184SR1
10
MOTOROLA RF DEVICE DATA
Archived 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
PACKAGE DIMENSIONS
2X
G
B
Q
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INCHES
MIN
MAX
* * *
*
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*
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*
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*
*
* *
*
*
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*
*
*
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* * * MILLIMETERS
MIN
MAX
*
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*
*
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*
*
*
*
*
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* "
* "
* CASE 360B–05
ISSUE F
NI–360
MRF184R1
A
A
(FLANGE)
B
ARCHIVED 2005
%
DIM
A
B
C
D
E
F
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(FLANGE)
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SEATING
PLANE
(INSULATOR)
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MOTOROLA RF DEVICE DATA
%
DIM
A
B
C
D
E
F
H
K
M
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R
S
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bbb
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INCHES
MIN
MAX
*
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*
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*
*
*
*
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*
*
*
*
* *
*
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* * * MILLIMETERS
MIN
MAX
* *
* *
*
*
*
* * *
*
*
*
* *
*
*
*
*
*
*
*
* *
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ISSUE D
NI–360S
MRF184SR1
MRF184R1 MRF184SR1
11
Archived 2005
ARCHIVED 2005
ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation, or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by
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respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
E Motorola, Inc. 2002.
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MRF184R1 MRF184SR1
12
◊
MOTOROLA RF DEVICE DATA
MRF184/D
Archived 2005