Hynix HY29F800ATR-12I 8 megabit (1mx8/512kx16), 5 volt-only, flash memory Datasheet

HY29F800A
8 Megabit (1Mx8/512Kx16), 5 Volt-only, Flash Memory
KEY FEATURES
n 5 Volt Read, Program, and Erase
– Minimizes system-level power requirements
n High Performance
– Access times as fast as 50 ns
n Low Power Consumption
– 20 mA typical active read current in byte
mode, 28 mA typical in word mode
– 35 mA typical program/erase current
– 5 µA maximum CMOS standby current
n Compatible with JEDEC Standards
– Package, pinout and command-set
compatible with the single-supply Flash
device standard
– Provides superior inadvertent write
protection
n Sector Erase Architecture
– Boot sector architecture with top and
bottom boot block options available
– One 16 Kbyte, two 8 Kbyte, one 32 Kbyte
and fifteen 64 Kbyte sectors in byte mode
– One 8 Kword, two 4 Kword, one 16 Kword
and fifteen 32 Kword sectors in word mode
– A command can erase any combination of
sectors
– Supports full chip erase
n Erase Suspend/Resume
– Temporarily suspends a sector erase
operation to allow data to be read from, or
programmed into, any sector not being
erased
n Sector Protection
– Any combination of sectors may be locked
to prevent program or erase operations
within those sectors
n Temporary Sector Unprotect
– Allows changes in locked sectors
(requires high voltage on RESET# pin)
n Internal Erase Algorithm
– Automatically erases a sector, any
combination of sectors, or the entire chip
n Internal Programming Algorithm
– Automatically programs and verifies data
at a specified address
n Fast Program and Erase Times
– Byte programming time: 7 µs typical
– Sector erase time: 1.0 sec typical
– Chip erase time: 19 sec typical
n Data# Polling and Toggle Status Bits
– Provide software confirmation of
completion of program or erase
operations
n Ready/Busy# Output (RY/BY#)
– Provides hardware confirmation of
completion of program and erase
operations
n Minimum 100,000 Program/Erase Cycles
n Space Efficient Packaging
– Available in industry-standard 44-pin
PSOP and 48-pin TSOP and reverse
TSOP packages
GENERAL DESCRIPTION
LOGIC DIAGRAM
The HY29F800A is an 8 Megabit, 5 volt only CMOS
Flash memory organized as 1,048,576 (1M) bytes
or 524,288 (512K) words. The device is offered in
industry-standard 44-pin PSOP and 48-pin TSOP
packages.
The HY29F800A can be programmed and erased
in-system with a single 5-volt VCC supply. Internally
generated and regulated voltages are provided for
program and erase operations, so that the device
does not require a high voltage power supply to
perform those functions. The device can also be
programmed in standard EPROM programmers.
Access times as fast as 55 ns over the full operating voltage range of 5.0 volts ± 10% are offered for
timing compatibility with the zero wait state requirements of high speed microprocessors. A 50 ns
Preliminary
Revision 1.1, February 2002
19
8
A[18:0]
DQ[7:0]
7
CE#
DQ[14:8]
OE#
DQ[15]/A-1
WE#
RESET#
BYTE#
RY/BY#
HY29F800A
version operating over 5.0 volts ± 5% is also available. To eliminate bus contention, the HY29F800A
has separate chip enable (CE#), write enable
(WE#) and output enable (OE#) controls.
The device is compatible with the JEDEC single
power-supply Flash command set standard. Commands are written to the command register using
standard microprocessor write timings, from where
they are routed to an internal state-machine that
controls the erase and programming circuits. Device programming is performed a byte at a time
by executing the four-cycle Program Command.
This initiates an internal algorithm that automatically times the program pulse widths and verifies
proper cell margin.
The HY29F800A’s sector erase architecture allows
any number of array sectors to be erased and reprogrammed without affecting the data contents
of other sectors. Device erasure is initiated by executing the Erase Command. This initiates an internal algorithm that automatically preprograms the
array (if it is not already programmed) before executing the erase operation. During erase cycles,
the device automatically times the erase pulse
widths and verifies proper cell margin.
To protect data in the device from accidental or
unauthorized attempts to program or erase the
device while it is in the system (e.g., by a virus),
BLOCK DIAGRAM
the device has a Sector Protect function which
hardware write protects selected sectors. The
sector protect and unprotect features can be enabled in a PROM programmer. Temporary Sector
Unprotect, which requires a high voltage, allows
in-system erasure and code changes in previously
protected sectors.
Erase Suspend enables the user to put erase on
hold for any period of time to read data from, or
program data to, any sector that is not selected
for erasure. True background erase can thus be
achieved. The device is fully erased when shipped
from the factory.
Addresses and data needed for the programming
and erase operations are internally latched during
write cycles, and the host system can detect
completion of a program or erase operation by
observing the RY/BY# pin, or by reading the DQ[7]
(Data# Polling) and DQ[6] (toggle) status bits.
Reading data from the device is similar to reading
from SRAM or EPROM devices. Hardware data
protection measures include a low VCC detector
that automatically inhibits write operations during
power transitions.
The host can place the device into the standby
mode. Power consumption is greatly reduced in
this mode.
DQ[15:0]
A[18:0], A-1
STATE
CONTROL
ERASE VOLTAGE
GENERATOR AND
SECTOR SWITCHES
DQ[15:0]
WE#
CE#
I/O BUFFERS
COMMAND
REGISTER
I/O CONTROL
DATA LATCH
OE#
PROGRAM
VOLTAGE
GENERATOR
BYTE#
RESET#
V C C DETECTOR
2
TIMER
A[18:0], A-1
ADDRESS LATCH
RY/BY#
Y-DECODER
Y-GATING
X-DECODER
8 Mb FLASH
MEMORY
ARRAY
Rev. 1.1/Feb 02
HY29F800A
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE#
V SS
OE#
DQ0
DQ8
DQ1
DQ9
DQ2
DQ10
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
DQ3
DQ11
21
22
PSOP44
PIN CONFIGURATIONS
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
RESET#
WE#
A8
A9
A10
A11
A12
A13
A14
A15
A16
BYTE#
V SS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
24
23
DQ4
V CC
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE#
RESET#
NC
NC
RY/BY#
A18
A17
A7
A6
A5
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
A16
BYTE#
V SS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
V CC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
A4
A3
A2
A1
21
22
23
24
28
27
26
25
OE#
V SS
CE#
A0
A16
BYTE#
V SS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
V CC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE#
RESET#
NC
NC
RY/BY#
A18
A17
A7
A6
A5
OE#
V SS
CE#
A0
21
22
23
24
28
27
26
25
A4
A3
A2
A1
CONVENTIONS
Unless otherwise noted, a positive logic (active
High) convention is assumed throughout this document, whereby the presence at a pin of a higher,
more positive voltage (nominally 5VDC) causes
assertion of the signal. A ‘#’ symbol following the
signal name, e.g., RESET#, indicates that the signal is asserted in a Low state (nominally 0 volts).
Rev. 1.1/Feb 02
Standard
TSOP48
Reverse
TSOP48
Whenever a signal is separated into numbered bits,
e.g., DQ[7], DQ[6], ..., DQ[0], the family of bits may
also be shown collectively, e.g., as DQ[7:0].
The designation 0xNNNN (N = 0, 1, 2, . . . , 9, A, .
. . , E, F) indicates a number expressed in hexadecimal notation. The designation 0bXXXX indicates a
number expressed in binary notation (X = 0, 1).
3
HY29F800A
SIGNAL DESCRIPTIONS
Name
A[18:0]
DQ[15]/A[-1],
DQ[14:0]
BYTE#
C E#
OE#
WE#
RESET#
RY/BY#
VCC
V SS
Type
Description
Address, active High. In word mode, these 19 inputs select one of 524,288
(512K) words within the array for read or write operations. In byte mode, these
Inputs
inputs are combined with the DQ[15]/A[-1] input (LSB) to select one of 1,048,576
(1M) bytes within the array for read or write operations.
Data Bus, active High. In word mode, these pins provide a 16-bit data path
Inputs/Outputs for read and write operations. In byte mode, DQ[7:0] provide an 8-bit data path
Tri-state
and DQ[15]/A[-1] is used as the LSB of the 20-bit byte address input. DQ[14:8]
are unused and remain tri-stated in byte mode.
Byte Mode, active Low. Controls the Byte/Word configuration of the device.
Input
Low selects byte mode, High selects word mode.
Chip Enable, active Low. This input must be asserted to read data from or
Input
write data to the HY29F800A. When High, the data bus is tri-stated and the
device is placed in the Standby mode.
Output Enable, active Low . This input must be asserted for read operations
and negated for write operations. BYTE# determines whether a byte or a word
Input
is read during the read operation. When High, data outputs from the device are
disabled and the data bus pins are placed in the high impedance state.
W r ite E n a b le , a c tiv e L o w. C o ntro ls wri ti ng o f c o mma nd s o r c o mma nd
sequences in order to program data or erase sectors of the memory array. A
Input
write operation takes place when WE# is asserted while CE# is Low and OE#
is High. BYTE# determines whether a byte or a word is written during the write
operation.
Hardw are Reset, active Low. Provides a hardware method of resetting the
HY29F800A to the read array state. When the device is reset, it immediately
Input
terminates any operation in progress. The data bus is tri-stated and all read/write
commands are ignored while the input is asserted. While RESET# is asserted,
the device will be in the Standby mode.
R e a d y /B u s y S ta tu s . Ind i c a te s whe the r a wri te o r e ra s e c o mma nd i s i n
progress or has been completed. RY/BY# is valid after the rising edge of the
Output
final WE# pulse of a command sequence. It remains Low while the device is
Open Drain
actively programming data or erasing, and goes High when it is ready to read
array data.
5-volt (nominal) pow er supply.
---
Pow er and signal ground.
MEMORY ARRAY ORGANIZATION
The 1 Mbyte Flash memory array is organized into
nineteen blocks called sectors (S0, S1, . . . , S18).
A sector is the smallest unit that can be erased
and which can be protected to prevent accidental
or unauthorized erasure. See the ‘Bus Operations’
and ‘Command Definitions’ sections of this document for additional information on these functions.
In the HY29F800A, four of the sectors, which comprise the boot block, vary in size from 8 to 32
4
Kbytes (4 to 16 Kwords), while the remaining fifteen sectors are uniformly sized at 64 Kbytes (32
Kwords). The boot block can be located at the
bottom of the address range (HY29F800AB) or at
the top of the address range (HY29F800AT).
Table 1 defines the sector addresses and corresponding address ranges for the top and bottom
boot block versions of the HY29F800A.
Rev. 1.1/Feb 02
HY29F800A
Table 1. HY29F800A Memory Array Organization
HY29F800AB - Bottom Boot Block
HY29F800AT - Top Boot Block
Device Sector
S0
S1
S2
S3
S4
S5
S6
S7
S8
S9
S10
S11
S12
S13
S14
S15
S16
S17
S18
S0
S1
S2
S3
S4
S5
S6
S7
S8
S9
S10
S11
S12
S13
S14
S15
S16
S17
S18
Sector Address 1
Size
Byte Mode
(KB/KW) A[18] A[17] A[16] A[15] A[14] A[13] A[12] Address Range 2
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
32/16
8/4
8/4
16/8
16/8
8/4
8/4
32/16
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
64/32
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
1
1
1
0
0
0
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
1
1
1
0
0
0
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
1
1
1
0
0
0
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
1
1
1
0
0
0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
0
1
1
1
0
0
0
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
0
0
1
0
1
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
0
1
X
X
0
1
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
0x00000 - 0x0FFFF
0x10000 - 0x1FFFF
0x20000 - 0x2FFFF
0x30000 - 0x3FFFF
0x40000 - 0x4FFFF
0x50000 - 0x5FFFF
0x60000 - 0x6FFFF
0x70000 - 0x7FFFF
0x80000 - 0x8FFFF
0x90000 - 0x9FFFF
0xA0000 - 0xAFFFF
0xB0000 - 0xBFFFF
0xC0000 - 0xCFFFF
0xD0000 - 0xDFFFF
0xE0000 - 0xEFFFF
0xF0000 - 0xF7FFF
0xF8000 - 0xF9FFF
0xFA000 - 0xFBFFF
0xFC000 - 0xFFFFF
0x00000 - 0x03FFF
0x04000 - 0x05FFF
0x06000 - 0x07FFF
0x08000 - 0x0FFFF
0x10000 - 0x1FFFF
0x20000 - 0x2FFFF
0x30000 - 0x3FFFF
0x40000 - 0x4FFFF
0x50000 - 0x5FFFF
0x60000 - 0x6FFFF
0x70000 - 0x7FFFF
0x80000 - 0x8FFFF
0x90000 - 0x9FFFF
0xA0000 - 0xAFFFF
0xB0000 - 0xBFFFF
0xC0000 - 0xCFFFF
0xD0000 - 0xDFFFF
0xE0000 - 0xEFFFF
0xF0000 - 0xFFFFF
Word Mode
Address Range 3
0x00000 - 0x07FFF
0x08000 - 0x0FFFF
0x10000 - 0x17FFF
0x18000 - 0x1FFFF
0x20000 - 0x27FFF
0x28000 - 0x2FFFF
0x30000 - 0x37FFF
0x38000 - 0x3FFFF
0x40000 - 0x47FFF
0x48000 - 0x4FFFF
0x50000 - 0x57FFF
0x58000 - 0x5FFFF
0x60000 - 0x67FFF
0x68000 - 0x6FFFF
0x70000 - 0x77FFF
0x78000 - 0x7BFFF
0x7C000 - 0x7CFFF
0x7D000 - 0x7DFFF
0x7E000 - 0x7FFFF
0x00000 - 0x01FFF
0x02000 - 0x02FFF
0x03000 - 0x03FFF
0x04000 - 0x07FFF
0x08000 - 0x0FFFF
0x10000 - 0x17FFF
0x18000 - 0x1FFFF
0x20000 - 0x27FFF
0x28000 - 0x2FFFF
0x30000 - 0x37FFF
0x38000 - 0x3FFFF
0x40000 - 0x47FFF
0x48000 - 0x4FFFF
0x50000 - 0x57FFF
0x58000 - 0x5FFFF
0x60000 - 0x67FFF
0x68000 - 0x6FFFF
0x70000 - 0x77FFF
0x78000 - 0x7FFFF
Notes:
1. X indicates Don’t Care.
2. Address in Byte Mode is A[18:-1].
3. Address in Word Mode is A[18:0].
Rev. 1.1/Feb 02
5
HY29F800A
Table 2. HY29F800A Normal Bus Operations 1
DQ[15:8]
CE#
OE#
WE#
RESET #
Address 2
DQ[7:0]
Read
L
L
H
H
AIN
DOUT
DOUT
High-Z
Write
L
H
L
H
AIN
DIN
DIN
High-Z
Output Disable
L
H
H
H
X
High-Z
High-Z
High-Z
CE# TTL Standby
H
X
X
H
X
High-Z
High-Z
High-Z
X
X
VCC ± 0.5V
X
High-Z
High-Z
High-Z
X
X
X
L
X
High-Z
High-Z
High-Z
X
X
X
VSS ± 0.5V
X
High-Z
High-Z
High-Z
Operation
CE# CMOS Standby VCC ± 0.5V
Hardware Reset
(TTL Standby)
Hardware Reset
(CMOS Standby)
BYTE# = H BYTE# = L
Notes:
1. L = VIL, H = VIH, X = Don’t Care, DOUT = Data Out, DIN = Data In. See DC Characteristics for voltage levels.
2. Address is A[18:-1] in Byte Mode and A[18:0] in Word Mode.
3. DQ[15] is the A[-1] input in Byte Mode (BYTE# = L).
BUS OPERATIONS
Device bus operations are initiated through the
internal command register, which consists of sets
of latches that store the commands, along with
the address and data information, if any, needed
to execute the specific command. The command
register itself does not occupy any addressable
memory location. The contents of the command
register serve as inputs to an internal state machine whose outputs control the operation of the
device. Table 2 lists the normal bus operations,
the inputs and control levels they require, and the
resulting outputs. Certain bus operations require
a high voltage on one or more device pins. Those
are described in Table 3.
Read Operation
Data is read from the HY29F800A by using standard microprocessor read cycles while placing the
address of the byte or word to be read on the
device’s address inputs, A[18:0] in Word mode
(BYTE# = H) or A[18:-1] in Byte mode (BYTE# =
L) . As shown in Table 2, the host system must
drive the CE# and OE# inputs Low and drive WE#
High for a valid read operation to take place. The
device outputs the specified array data on DQ[7:0]
in Byte mode and on DQ[15:0] in Word mode.
Note that DQ[15] serves as address input A[-1]
when the device is operating in Byte mode.
The HY29F800A is automatically set for reading
array data after device power-up and after a hardware reset to ensure that no spurious alteration of
6
the memory content occurs during the power transition. No command is necessary in this mode to
obtain array data, and the device remains enabled
for read accesses until the command register contents are altered.
This device features an Erase Suspend mode.
While in this mode, the host may read the array
data from any sector of memory that is not marked
for erasure. If the host attempts to read from an
address within an erase-suspended sector, or
while the device is performing an erase or byte/
word program operation, the device outputs status data instead of array data. After completing a
programming operation in the Erase Suspend
mode, the system may once again read array data
with the same exceptions noted above. After completing an internal program or internal erase algorithm, the HY29F800A automatically returns to the
read array data mode.
The host must issue a hardware reset or the software reset command (see Command Definitions)
to return a sector to the read array data mode if
DQ[5] goes high during a program or erase cycle,
or to return the device to the read array data mode
while it is in the Electronic ID mode.
Write Operation
Certain operations, including programming data
and erasing sectors of memory, require the host
to write a command or command sequence to the
HY29F800A. Writes to the device are performed
Rev. 1.1/Feb 02
HY29F800A
Table 3. HY29F800A Bus Operations Requiring High Voltage 1, 2
DQ[15: 8]
Operation
3
CE# OE# WE# RESET# A[18:12] A[9] A[6] A[1] A[0]
DQ[7: 0]
BYTE# BYTE#
=H
= L5
L
VID
X
H
SA 4
VID
X
X
X
X
X
High-Z
Sector Unprotect
VID
VID
X
H
X
VID
X
X
X
X
X
High-Z
Temporary Sector
Unprotect
X
X
X
VID
X
X
X
X
X
DIN
DIN
High-Z
Manufacturer Code
L
L
H
H
X
VID
L
L
L
0xAD
X
High-Z
D evi ce HY29F800AB
C ode HY29F800AT
L
L
H
H
X
VID
L
L
H
0x22
High-Z
X
High-Z
Sector Protect
Sector Group
Protection
Verification
L
L
H
H
SA 4
VID
L
H
L
0x58
0xD6
0x00 =
Unprotected
0x01 =
Protected
Notes:
1. L = VIL, H = VIH, X = Don’t Care. See DC Characteristics for voltage levels.
2. Address bits not specified are Don’t Care.
3. See text for additional information.
4. SA = sector address. See Table 1.
5. DQ[15] is the A[-1] input in Byte Mode (BYTE# = L).
by placing the byte or word address on the device’s
address inputs while the data to be written is input
on DQ[7:0] in Byte mode (BYTE# = L) and on
DQ[15:0] in Word mode (BYTE# = H). The host
system must drive the CE# and WE# pins Low
and drive OE# High for a valid write operation to
take place. All addresses are latched on the falling edge of WE# or CE#, whichever happens later.
All data is latched on the rising edge of WE# or
CE#, whichever happens first.
The ‘Device Commands’ section of this document
provides details on the specific device commands
implemented in the HY29F800A.
Output Disable Operation
When the OE# input is at VIH, output data from the
device is disabled and the data bus pins are placed
in the high impedance state.
Standby Operation
When the system is not reading from or writing to
the HY29F800A, it can place the device in the
Standby mode. In this mode, current consumption is greatly reduced, and the data bus outputs
are placed in the high impedance state, independent of the OE# input. The Standby mode can
invoked using two methods.
Rev. 1.1/Feb 02
The device enters the CE# CMOS Standby mode
if the CE# and RESET# pins are both held at VCC
± 0.5V. Note that this is a more restricted voltage
range than VIH. If both CE# and RESET# are held
High, but not within VCC ± 0.5V, the device will be
in the CE# TTL Standby mode, but the standby
current will be greater.
The device enters the RESET# CMOS Standby
mode when the RESET# pin is held at VSS ± 0.5V.
If RESET# is held Low but not within VSS ± 0.5V,
the HY29F800A will be in the RESET# TTL
Standby mode, but the standby current will be
greater. See Hardware Reset Operation section
for additional information on the reset operation.
The device requires standard access time (tCE) for
read access when the device is in either of the
standby modes, before it is ready to read data. If
the device is deselected during erasure or programming, it continues to draw active current until
the operation is completed.
Hardware Reset Operation
The RESET# pin provides a hardware method of
resetting the device to reading array data. When
the RESET# pin is driven Low for the minimum
specified period, the device immediately terminates any operation in progress, tri-states the data
bus pins, and ignores all read/write commands for
7
HY29F800A
device, enabling the system to read the boot-up
firmware from the Flash memory.
the duration of the RESET# pulse. The device also
resets the internal state machine to reading array
data. If an operation was interrupted by the assertion of RESET#, it should be reinitiated once
the device is ready to accept another command
sequence to ensure data integrity.
Sector Protect/Unprotect Operations
Hardware sector protection can be invoked to disable program and erase operations in any single
sector or combination of sectors. This function is
typically used to protect data in the device from
unauthorized or accidental attempts to program
or erase the device while it is in the system (e.g.,
by a virus) and is implemented using programming
equipment. Sector unprotection re-enables the
program and erase operations in previously protected sectors.
Current is reduced for the duration of the RESET#
pulse as described in the Standby Operation section above.
If RESET# is asserted during a program or erase
operation, the RY/BY# pin remains Low (busy) until
the internal reset operation is complete, which requires a time of tREADY (during Automatic Algorithms). The system can thus monitor RY/BY# to
determine when the reset operation completes,
and can perform a read or write operation tRB after
RY/BY# goes High. If RESET# is asserted when
a program or erase operation is not executing (RY/
BY# pin is High), the reset operation is completed
within a time of tRP. In this case, the host can perform a read or write operation tRH after the RESET# pin returns High .
Table 1 identifies the nineteen sectors and the
address range that each covers. The device is
shipped with all sectors unprotected.
The sector protect/unprotect operations require a
high voltage (VID) on address pin A[9] and the CE#
and/or OE# control pins, as detailed in Table 3.
When implementing these operations, note that
VCC must be applied to the device before applying
VID, and that VID should be removed before removing VCC from the device.
The RESET# pin may be tied to the system reset
signal. Thus, a system reset would also reset the
START
Wait t W P P 1
A P P L Y V CC
Set TRYCNT = 1
W E # = V IH
A9 = V ID
A[18:12] = Sector to Protect
OE# = CE# = A6 = A0 = V IL
A1 = V IH
Increment TRYCNT
Read Data
NO
Set A9 = OE# = V ID
Data = 0x01?
Set Address:
A[18:12] = Sector to Protect
CE# = V IL
R E S E T # = V IH
W E # = V IL
NO
TRYCNT = 25?
YES
YES
R e m o v e V ID from A9
Protect Another
Sector?
NO
DEVICE FAILURE
SECTOR PROTECT
COMPLETE
YES
Figure 1. Sector Protect Procedure
8
Rev. 1.1/Feb 02
HY29F800A
The flow chart in Figure 1 illustrates the procedure for protecting sectors, and timing specifications and waveforms are shown in the specifications section of this document. Verification of protection is accomplished as described in the Electronic ID Mode section and shown in the flow chart.
The procedure for sector unprotection is illustrated
in the flow chart in Figure 2, and timing specifications and waveforms are given at the end of this
document. Note that to unprotect any sector, all
unprotected sectors must first be protected prior
to the first unprotect write cycle.
Sectors can also be temporarily unprotected as
described in the next section.
Temporary Sector Unprotect Operation
This feature allows temporary unprotection of previously protected sectors to allow changing the
data in-system. Temporary Sector Unprotect mode
is activated by setting the RESET# pin to VID. While
in this mode, formerly protected sectors can be
programmed or erased by invoking the appropriate commands (see Device Commands section).
Once VID is removed from RESET#, all the previously protected sectors are protected again. Figure 3 illustrates the algorithm.
Electronic ID Mode Operation
The Electronic ID mode provides manufacturer and
device identification and sector protection verification through identifier codes output on DQ[7:0]
or DQ[15:0]. This mode is intended primarily for
programming equipment to automatically match a
device to be programmed with its corresponding
programming algorithm. The Electronic ID information can also be obtained by the host through a
command sequence, as described in the Device
Commands section.
Operation in the Electronic ID mode requires VID
on address pin A[9], with additional requirements
START
NOTE: All sectors must be
previously protected.
APPLY V
Increment TRYCNT
Set Sector Group Address:
A[18:12] = Sector NSEC
A0 = A6 = V IL
A1 = V IH
CC
Set: TRYCNT = 1
Read Data
NO
Set: NSEC = 0
Data = 0x00?
Set: A9 = CE# = OE# = V
Set: RESET# = V
IH
W E # = V IL
NO
YES
TRYCNT = 1000?
ID
YES
NSEC = 18?
YES
Remove V
Wait t W P P 2
NO
ID
from A9
NSEC = NSEC + 1
SECTOR UNPROTECT
COMPLETE
W E # = V IH
Set:
A9 = V ID
OE# = CE# = V
DEVICE FAILURE
IL
Figure 2. Sector Unprotect Procedure
Rev. 1.1/Feb 02
9
HY29F800A
START
R E S E T # = V ID
(All protected sector groups
become unprotected)
Perform Program or Erase
Operations
R E S E T # = V IH
(All previously protected
sector groups return to
protected state)
for obtaining specific data items as listed in Table
2:
n A read cycle at address 0xXXX00 retrieves the
manufacturer code (Hynix = 0xAD).
n A read cycle at address 0xXXX01 returns the
device code:
- HY29F800AT = 0xD6 in Byte mode, 0x22D6
in Word mode.
- HY29F800AB = 0x58 in Byte mode, 0x2258
in Word mode.
n A read cycle containing a sector address (Table
1) in A[18:12] and the address 0x02 in A[7:0]
returns 0x01 if that sector is protected, or 0x00
if it is unprotected.
TEMPORARY SECTOR
UNPROTECT COMPLETE
Figure 3. Temporary Sector Unprotect
DEVICE COMMANDS
Device operations are initiated by writing designated address and data command sequences into
the device. A command sequence is composed
of one, two or three of the following sub-segments:
an unlock cycle, a command cycle and a data
cycle. Table 4 summarizes the composition of the
valid command sequences implemented in the
HY29F800A, and these sequences are fully described in Table 5 and in the sections that follow.
Writing incorrect address and data values or writing them in the improper sequence resets the
HY29F800A to the Read mode.
Read/Reset 1, 2 Commands
The HY29F800A automatically enters the Read
mode after device power-up, after the RESET#
input is asserted and upon the completion of certain commands. Read/Reset commands are not
required to retrieve data in these cases.
A Read/Reset command must be issued in order
to read array data in the following cases:
n If the device is in the Electronic ID mode, a
Read/Reset command must be written to return to the Read mode. If the device was in the
Erase Suspend mode when the device entered
the Electronic ID mode, writing the Read/Reset command returns the device to the Erase
Suspend mode.
10
Table 4. Composition of Command Sequences
Co mman d
Seq u en c e
Nu mb er o f B u s Cy c les
Un lo c k Co mman d
Dat a
Read/Reset 1
0
1
Note 1
Read/Reset 2
2
1
Note 1
Byte Program
2
1
1
Chip Erase
4
1
1
Sector Erase
4
1
1 (Note 2)
Erase Suspend
0
1
0
Erase Resume
0
1
0
Electronic ID
2
1
Note 3
Notes:
1. Any number of Flash array read cycles are permitted.
2. Additional data cycles may follow. See text.
3. Any number of Electronic ID read cycles are permitted.
Note: When in the Electronic ID bus operation mode,
the device returns to the Read mode when VID is removed
from the A[9] pin. The Read/Reset command is not required in this case.
n If DQ[5] (Exceeded Time Limit) goes High during a program or erase operation, writing the
Read/Reset command returns the sectors to
the Read mode (or to the Erase Suspend mode
if the device was in Erase Suspend).
The Read/Reset command may also be used to
abort certain command sequences:
Rev. 1.1/Feb 02
Rev. 1.1/Feb 02
Table 5. HY29F800A Command Sequences
Wr i t e
Cy c les
1
Co mman d Seq u en c e
Read/Reset 1 6, 8
Reset/Reset 2
7, 8
Program
Chip Erase
Sector Erase
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Electronic ID 7
Erase Suspend 4
Erase Resume 5
Manufacturer Code
Device Code
Sector Protect Verify
3
4
6
6
1
1
Word
Byte
Word
Byte
Word
Byte
3
3
3
Fir s t
Ad d
Dat a
XXX
F0
555
AA
AAA
555
AA
AAA
555
AA
AAA
555
AA
AAA
XXX
B0
XXX
30
555
AA
AAA
555
AA
AAA
555
AA
AAA
Sec o n d
Ad d
Dat a
RA
RD
2AA
55
555
2AA
55
555
2AA
55
555
2AA
55
555
B u s Cy c les 1, 2, 3
T h ir d
Fo u r t h
Ad d
Dat a
Ad d
Dat a
Fif t h
Ad d
Dat a
Six t h
Ad d
Dat a
555
AAA
555
AAA
555
AAA
555
AAA
2AA
555
2AA
555
55
555
AAA
10
55
SA
30
2AA
555
2AA
555
2AA
555
555
AAA
555
AAA
555
AAA
55
55
55
F0
RA
RD
A0
PA
PD
80
80
555
AAA
555
AAA
AA
AA
90
X00
90
X01 22D6 (Top Boot), 2258 (Bottom Boot)
X02 D6 (Top Boot), 58 (Bottom Boot)
90
(SA)X02
(SA)X04
AD
STATUS
Legend:
X = Don’t Care
PA = Address of the data to be programmed
RA = Memory address of data to be read
PD = Data to be programmed at address PA
RD = Data read from location RA during the read operation
SA = Sector address of sector to be erased or verified (see Note 3 and Table 1).
STATUS = Sector protect status: 0x00 = unprotected, 0x01 = protected.
HY29F800A
11
Notes:
1. All values are in hexadecimal. DQ[15:8] are don’t care for unlock and command cycles.
2. All bus cycles are write operations unless otherwise noted.
3. Address is A[10:0] in Word mode and A[10:-1] in Byte mode. A[18:11] are don’t care except as follows:
• For RA and PA, A[18:11] are the upper address bits of the byte to be read or programmed.
• For the sixth cycle of Sector Erase, SA = A[18:12] are the sector address of the sector to be erased.
• For the fourth cycle of Sector Protect Verify, SA = A[18:12] are the sector address of the sector to be verified.
4. The Erase Suspend command is valid only during a sector erase operation. The system may read and program in non-erasing sectors, or enter the Electronic
ID mode, while in the Erase Suspend mode.
5. The Erase Resume command is valid only during the Erase Suspend mode.
6. The second bus cycle is a read cycle.
7. The fourth bus cycle is a read cycle.
8. Either command sequence is valid. The command is required only to return to the Read mode when the device is in the Electronic ID command mode or if
DQ[5] goes High during a program or erase operation. It is not required for normal read operations.
HY29F800A
n In a Sector Erase or Chip Erase command sequence, the Read/Reset command may be
written at any time before erasing actually begins, including, for the Sector Erase command,
between the cycles that specify the sectors to
be erased (see Sector Erase command description). This aborts the command and resets the device to the Read mode. Once erasure begins, however, the device ignores Read/
Reset commands until the operation is complete.
n In a Program command sequence, the Read/
Reset command may be written between the
sequence cycles before programming actually
begins. This aborts the command and resets
the device to the Read mode, or to the Erase
Suspend mode if the Program command sequence is written while the device is in the
Erase Suspend mode. Once programming
begins, however, the device ignores Read/Reset commands until the operation is complete.
n The Read/Reset command may be written between the cycles in an Electronic ID command
sequence to abort that command. As described
above, once in the Electronic ID mode, the
Read/Reset command must be written to return to the Read mode.
Byte/Word Program Command
The host processor programs the device a byte or
word at a time by issuing the Program command
sequence shown in Table 5. The sequence begins by writing two unlock cycles, followed by the
Program setup command and, lastly, a data cycle
specifying the program address and data. This
initiates the Automatic Programming algorithm,
which provides internally generated program
pulses and verifies the programmed cell margin.
The host is not required to provide further controls
or timings during this operation. When the Automatic Programming algorithm is complete, the
device returns to the Read mode. Several methods are provided to allow the host to determine
the status of the programming operation, as described in the Write Operation Status section.
Commands written to the device during execution
of the Automatic Programming algorithm are ignored. Note that a hardware reset immediately
terminates the programming operation. To ensure
data integrity, the aborted program command se12
quence should be reinitiated once the reset operation is complete.
Programming is allowed in any sequence. Only
erase operations can convert a stored “0” to a “1”.
Thus, a bit cannot be programmed from a “0” back
to a “1”. Attempting to do so will set DQ[5] to “1”,
and the Data# Polling algorithm will indicate that
the operation was not successful. A Read/Reset
command or a hardware reset is required to exit
this state, and a succeeding read will show that
the data is still “0”.
Figure 4 illustrates the procedure for the Byte/Word
Program operation.
Chip Erase Command
The Chip Erase command sequence consists of
two unlock cycles, followed by the erase command,
two additional unlock cycles and then the chip
erase data cycle. During chip erase, all sectors of
the device are erased except protected sectors.
The command sequence starts the Automatic
Erase algorithm, which preprograms and verifies
the entire memory, except for protected sectors,
for an all zero data pattern prior to electrical erase.
The device then provides the required number of
internally generated erase pulses and verifies cell
erasure within the proper cell margins. The host
system is not required to provide any controls or
timings during these operations.
START
Issue PROGRAM
Command Sequence:
Last cycle contains
program Address/Data
Check Programming Status
(See Write Operation Status
Section)
DQ[5] Error Exit
Normal Exit
NO
Last Word/Byte
Done?
YES
PROGRAMMING
COMPLETE
GO TO
ERROR RECOVERY
Figure 4. Programming Procedure
Rev. 1.1/Feb 02
HY29F800A
Commands written to the device during execution
of the Automatic Erase algorithm are ignored. Note
that a hardware reset immediately terminates the
erase operation. To ensure data integrity, the
aborted Chip Erase command sequence should
be reissued once the reset operation is complete.
When the Automatic Erase algorithm is finished,
the device returns to the Read mode. Several
methods are provided to allow the host to determine the status of the erase operation, as described in the Write Operation Status section.
Figure 5 illustrates the Chip Erase procedure.
Sector Erase Command
The Sector Erase command sequence consists
of two unlock cycles, followed by the erase command, two additional unlock cycles and then the
sector erase data cycle, which specifies which
sector is to be erased. As described later in this
section, multiple sectors can be specified for erasure with a single command sequence. During
sector erase, all specified sectors are erased sequentially. The data in sectors not specified for
erasure, as well as the data in any protected sectors, even if specified for erasure, is not affected
by the sector erase operation.
The Sector Erase command sequence starts the
Automatic Erase algorithm, which preprograms
and verifies the specified unprotected sectors for
an all zero data pattern prior to electrical erase.
The device then provides the required number of
internally generated erase pulses and verifies cell
erasure within the proper cell margins. The host
START
Issue CHIP ERASE
Command Sequence
Check Erase Status
(See Write Operation Status
Section)
DQ[5] Error Exit
Normal Exit
CHIP ERASE COMPLETE
GO TO
ERROR RECOVERY
system is not required to provide any controls or
timings during these operations.
After the sector erase data cycle (the sixth bus
cycle) of the command sequence is issued, a sector erase time-out of 50 µs, measured from the
rising edge of the final WE# pulse in that bus cycle,
begins. During this time, an additional sector erase
data cycle, specifying the sector address of another sector to be erased, may be written into an
internal sector erase buffer. This buffer may be
loaded in any sequence, and the number of sectors specified may be from one sector to all sectors. The only restriction is that the time between
these additional data cycles must be less than 50
µs, otherwise erasure may begin before the last
data cycle is accepted. To ensure that all data
cycles are accepted, it is recommended that host
processor interrupts be disabled during the time
that the additional cycles are being issued and then
be re-enabled afterwards.
Note: The device is capable of accepting three ways of
invoking Erase Commands for additional sectors during
the time-out window. The preferred method, described
above, is the sector erase data cycle after the initial six
bus cycle command sequence. However, the device also
accepts the following methods of specifying additional
sectors during the sector erase time-out:
n Repeat the entire six-cycle command sequence, specifying the additional sector in the sixth cycle.
n Repeat the last three cycles of the six-cycle command
sequence, specifying the additional sector in the third
cycle.
If all sectors scheduled for erasing are protected,
the device returns to reading array data after approximately 100 µs. If at least one scheduled sector is not protected, the erase operation erases
the unprotected sectors, and ignores the command
for the scheduled sectors that are protected.
The system can monitor DQ[3] to determine if the
50 µs sector erase time-out has expired, as described in the Write Operation Status section. If
the time between additional sector erase data
cycles can be insured to be less than the timeout, the system need not monitor DQ[3].
Any command other than Sector Erase or Erase
Suspend during the time-out period resets the
device to reading array data. The system must
then rewrite the command sequence, including any
additional sector erase data cycles. Once the sector erase operation itself has begun, only the Erase
Figure 5. Chip Erase Procedure
Rev. 1.1/Feb 02
13
HY29F800A
Suspend command is valid. All other commands
are ignored.
cycles, and is ignored if it is issued during chip
erase or programming operations.
As for the Chip Erase command, note that a hardware reset immediately terminates the erase operation. To ensure data integrity, the aborted Sector Erase command sequence should be reissued
once the reset operation is complete.
The HY29F800A requires a maximum of 20 µs to
suspend the erase operation if the Erase Suspend
command is issued during active sector erasure.
However, if the command is written during the timeout, the time-out is terminated and the erase operation is suspended immediately. Any subsequent attempts to specify additional sectors for
erasure by writing the sector erase data cycle (SA/
0x30) will be interpreted as the Erase Resume
command (XXX/0x30), which will cause the Automatic Erase algorithm to begin its operation. Note
that any other command during the time-out will
reset the device to the Read mode.
When the Automatic Erase algorithm terminates,
the device returns to the Read mode. Several
methods are provided to allow the host to determine the status of the erase operation, as described in the Write Operation Status section.
Figure 6 illustrates the Sector Erase procedure.
Erase Suspend/Erase Resume Commands
The Erase Suspend command allows the system
to interrupt a sector erase operation to read data
from, or program data to, any sector not being
erased. The command causes the erase operation to be suspended in all sectors selected for
erasure. This command is valid only during the
sector erase operation, including during the 50 µs
time-out period at the end of the initial command
sequence and any subsequent sector erase data
Once the erase operation has been suspended,
the system can read array data from or program
data to any sector not selected for erasure. Normal read and write timings and command definitions apply. Reading at any address within erasesuspended sectors produces status data on
DQ[7:0]. The host can use DQ[7], or DQ[6] and
DQ[2] together, to determine if a sector is actively
erasing or is erase-suspended. See “Write Operation Status” for information on these status bits.
After an erase-suspended program operation is
complete, the host can initiate another program-
START
Check Erase Status
(See Write Operation Status
Section)
DQ[5] Error Exit
Normal Exit
Write First Five Cycles of
SECTOR ERASE
Command Sequence
ERASE COMPLETE
GO TO
ERROR RECOVERY
Setup First (or Next) Sector
Address for Erase Operation
Write Last Cycle (SA/0x30)
of SECTOR ERASE
Command Sequence
Sectors which require erasure
but which were not specified in
this erase cycle must be erased
later using a new command
sequence
NO
Erase An
Additional Sector?
YES
Sector Erase
Time-out (DQ[3])
Expired?
YES
NO
Figure 6. Sector Erase Procedure
14
Rev. 1.1/Feb 02
HY29F800A
ming operation (or read operation) within non-suspended sectors. The host can determine the status of a program operation during the erase-suspended state just as in the standard programming
operation.
The system must write the Erase Resume command to exit the Erase Suspend mode and continue the sector erase operation. Further writes of
the Resume command are ignored. Another Erase
Suspend command can be written after the device has resumed erasing.
The host may also write the Electronic ID command sequence when the device is in the Erase
Suspend mode. The device allows reading Electronic ID codes even if the addresses used for the
ID read cycles are within erasing sectors, since
the codes are not stored in the memory array.
When the device exits the Electronic ID mode, the
device reverts to the Erase Suspend mode, and is
ready for another valid operation. See Electronic
ID section for more information.
Electronic ID Command
The Electronic ID operation intended for use in
programming equipment has been described previously. The host processor can also be obtain
the same data by using the Electronic ID command
sequence shown in Table 5. This method does
not require VID on any pin. The Electronic ID command sequence may be invoked while the device
is in the Read mode or the Erase Suspend mode,
but is invalid while the device is actively programming or erasing.
The Electronic ID command sequence is initiated
by writing two unlock cycles, followed by the Electronic ID command. The device then enters the
Electronic ID mode, and:
n A read cycle at address 0xXXX00 retrieves the
manufacturer code (Hynix = 0xAD).
n In Word mode, a read cycle at address
0xXXX01 returns the device code
(HY29F800AT = 0x22D6, HY29F800AB =
0x2258). In Byte mode, the same information
is retrieved from address 0xXXX02
(HY29F800AT = 0xD6, HY29F800AB = 0x58).
n In Word mode, a read cycle containing a sector address in A[18:12] and the address 0x02
in A[7:0] returns 0xXX01 if that sector is protected, or 0xXX00 if it is unprotected. In Byte
mode, the status information is retrieved using
0x04 in A[6:-1] (0x01 if the sector is protected,
0x00 if the sector is unprotected).
The host system may read at any address any
number of times, without initiating another command sequence. Thus, for example, the host may
determine the protection status for all sectors by
doing successive reads at the address specified
above while changing the A[18:12] for each cycle.
The system must write the Reset command to exit
the Electronic ID mode and return to the Read
mode, or to the Erase Suspend mode if the device was in that mode when the command sequence was issued.
WRITE OPERATION STATUS
The HY29F800A provides a number of facilities to
determine the status of a program or erase operation. These are the RY/BY# (Ready/Busy#) pin
and certain bits of a status word which can be read
from the device during the programming and erase
operations. Table 6 summarizes the status indications and further detail is provided in the subsections which follow.
RY/BY# - Ready/Busy#
RY/BY# is an open-drain output pin that indicates
whether a programming or erase Automatic Algorithm is in progress or has completed. A pull-up
resistor to VCC is required for proper operation. RY/
Rev. 1.1/Feb 02
BY# is valid after the rising edge of the final WE#
pulse in the corresponding command sequence.
If the output is Low (busy), the device is actively
erasing or programming, including programming
while in the Erase Suspend mode. If the output is
High (ready), the device has completed the operation and is ready to read array data in the normal or Erase Suspend modes, or it is in the standby
mode.
DQ[7] - Data# Polling
The Data# (“Data Bar”) Polling bit, DQ[7], indicates
to the host system whether an Automatic Algo15
HY29F800A
Table 6. Write and Erase Operation Status Summary
Mo d e
Op er at io n
DQ[ 7]
Programming in progress
Normal
1
DQ[7]#
DQ[ 6]
Toggle
DQ[ 5]
0/1
2
4
Data
0
Toggle
2
Erase completed
1
Data
4
Read within erase suspended
sector
1
Programming completed
Data
Erase in progress
Read within non-erase
Erase
Suspend suspended sector
Programming in progress 5
Programming completed
5
Data
0/1
DQ[ 3]
DQ[ 2]
1
RY/B Y#
N/A
N/A
0
Data
Data
1
Toggle
0
4
1
1
3
Data
Data
Data
No toggle
0
N/A
Toggle
1
Data
Data
Data
Data
Data
1
DQ[7]#
Toggle
0/1 2
N/A
N/A
0
4
Data
Data
Data
1
Data
Data
Notes:
1. A valid address is required when reading status information. See text for additional information.
2. DQ[5] status switches to a ‘1’ when a program or erase operation exceeds the maximum timing limit.
3. A ‘1’ during sector erase indicates that the 50 µs time-out has expired and active erasure is in progress. DQ[3] is not
applicable to the chip erase operation.
4. Equivalent to ‘No Toggle’ because data is obtained in this state.
5. Programming can be done only in a non-suspended sector (a sector not marked for erasure).
rithm is in progress or completed, or whether the
device is in Erase Suspend mode. Data# Polling
is valid after the rising edge of the final WE# pulse
in the Program or Erase command sequence.
The system must do a read at the program address to obtain valid programming status information on this bit. While a programming operation is
in progress, the device outputs the complement
of the value programmed to DQ[7]. When the programming operation is complete, the device outputs the value programmed to DQ[7]. If a program operation is attempted within a protected
sector, Data# Polling on DQ[7] is active for approximately 2 µs, then the device returns to reading array data.
The host must read at an address within any nonprotected sector scheduled for erasure to obtain
valid erase status information on DQ[7]. During
an erase operation, Data# Polling produces a “0”
on DQ[7]. When the erase operation is complete,
or if the device enters the Erase Suspend mode,
Data# Polling produces a “1” on DQ[7]. If all sectors selected for erasing are protected, Data# Polling on DQ[7] is active for approximately 100 µs,
then the device returns to reading array data. If at
least one selected sector is not protected, the
erase operation erases the unprotected sectors,
and ignores the command for the selected sectors that are protected.
16
When the system detects that DQ[7] has changed
from the complement to true data (or “0” to “1” for
erase), it should do an additional read cycle to read
valid data from DQ[7:0]. This is because DQ[7]
may change asynchronously with respect to the
other data bits while Output Enable (OE#) is asserted low.
Figure 7 illustrates the Data# Polling test algorithm.
DQ[6] - Toggle Bit I
Toggle Bit I on DQ[6] indicates whether an Automatic Program or Erase algorithm is in progress
or complete, or whether the device has entered
the Erase Suspend mode. Toggle Bit I may be read
at any address, and is valid after the rising edge
of the final WE# pulse in the program or erase
command sequence, including during the sector
erase time-out. The system may use either OE#
or CE# to control the read cycles.
Successive read cycles at any address during an
Automatic Program algorithm operation (including
programming while in Erase Suspend mode) cause
DQ[6] to toggle. DQ[6] stops toggling when the
operation is complete. If a program address falls
within a protected sector, DQ[6] toggles for approximately 2 µs after the program command sequence
is written, then returns to reading array data.
While the Automatic Erase algorithm is operating,
successive read cycles at any address cause
Rev. 1.1/Feb 02
HY29F800A
DQ[6] to toggle. DQ[6] stops toggling when the
erase operation is complete or when the device is
placed in the Erase Suspend mode. The host may
use DQ[2] to determine which sectors are erasing
or erase-suspended (see below). After an Erase
command sequence is written, if all sectors selected for erasing are protected, DQ[6] toggles for
approximately 100 µs, then returns to reading array data. If at least one selected sector is not protected, the Automatic Erase algorithm erases the
unprotected sectors, and ignores the selected sectors that are protected.
START
Read DQ[7:0]
at Valid Address (Note 1)
Test for DQ[7] = 1?
for Erase Operation
DQ[7] = Data?
NO
NO
DQ[2] - Toggle Bit II
Toggle Bit II, DQ[2], when used with DQ[6], indicates whether a particular sector is actively erasing or whether that sector is erase-suspended.
Toggle Bit II is valid after the rising edge of the
final WE# pulse in the command sequence. The
device toggles DQ[2] with each OE# or CE# read
cycle.
DQ[2] toggles when the host reads at addresses
within sectors that have been selected for erasure,
but cannot distinguish whether the sector is actively erasing or is erase-suspended. DQ[6], by
comparison, indicates whether the device is actively erasing or is in Erase Suspend, but cannot
distinguish which sectors are selected for erasure.
Thus, both status bits are required for sector and
mode information.
Figure 8 illustrates the operation of Toggle Bits I
and II.
YES
DQ[5] = 1?
YES
Read DQ[7:0]
at Valid Address (Note 1)
Test for DQ[7] = 1?
for Erase Operation
DQ[7] = Data?
(Note 2)
YES
NO
PROGRAM/ERASE
EXCEEDED TIME ERROR
PROGRAM/ERASE
COMPLETE
Notes:
1. During programming, the program address.
During sector erase, an address within any non-protected sector
scheduled for erasure.
During chip erase, an address within any non-protected sector.
2. Recheck DQ[7] since it may change asynchronously at the same time
as DQ[5].
Figure 7. Data# Polling Test Algorithm
DQ[5] - Exceeded Timing Limits
DQ[3] - Sector Erase Timer
DQ[5] is set to a ‘1’ when the program or erase
time has exceeded a specified internal pulse count
limit. This is a failure condition that indicates that
the program or erase cycle was not successfully
completed. DQ[5] status is valid only while DQ[7]
or DQ[6] indicate that the Automatic Algorithm is
in progress.
After writing a Sector Erase command sequence,
the host may read DQ[3] to determine whether or
not an erase operation has begun. When the
sector erase time-out expires and the sector erase
operation commences, DQ[3] switches from a ‘0’
to a ‘1’. Refer to the “Sector Erase Command”
section for additional information. Note that the
sector erase timer does not apply to the Chip Erase
command.
The DQ[5] failure condition will also be signaled if
the host tries to program a ‘1’ to a location that is
previously programmed to ‘0’, since only an erase
operation can change a ‘0’ to a ‘1’.
For both of these conditions, the host must issue
a Read/Reset command to return the device to
the Read mode.
Rev. 1.1/Feb 02
After the initial Sector Erase command sequence
is issued, the system should read the status on
DQ[7] (Data# Polling) or DQ[6] (Toggle Bit I) to
ensure that the device has accepted the command
sequence, and then read DQ[3]. If DQ[3] is a ‘1’,
the internally controlled erase cycle has begun and
17
HY29F800A
START
DQ[5] = 1?
Read DQ[7:0]
at Valid Address (Note 1)
NO
Read DQ[7:0]
YES
Read DQ[7:0]
at Valid Address (Note 1)
YES
NO
(Note 4)
DQ[6] Toggled?
NO
(Note 3)
PROGRAM/ERASE
COMPLETE
NO
Read DQ[7:0]
at Valid Address (Note 1)
Read DQ[7:0]
DQ[6] Toggled?
(Note 2)
DQ[2] Toggled?
NO
YES
YES
PROGRAM/ERASE
EXCEEDED TIME ERROR
SECTOR BEING READ
IS IN ERASE SUSPEND
SECTOR BEING READ
IS NOT IN ERASE SUSPEND
Notes:
1. During programming, the program address.
During sector erase, an address within any sector scheduled for erasure.
2. Recheck DQ[6] since toggling may stop at the same time as DQ[5] changes from 0 to 1.
3. Use this path if testing for Program/Erase status.
4. Use this path to test whether sector is in Erase Suspend mode.
Figure 8. Toggle Bit I and II Test Algorithm
all further sector erase data cycles or commands
(other than Erase Suspend) are ignored until the
erase operation is complete. If DQ[3] is a ‘0’, the
device will accept a sector erase data cycle to mark
an additional sector for erasure. To ensure that
18
the data cycles have been accepted, the system
software should check the status of DQ[3] prior to
and following each subsequent sector erase data
cycle. If DQ[3] is high on the second status check,
the last data cycle might not have been accepted.
Rev. 1.1/Feb 02
HY29F800A
HARDWARE DATA PROTECTION
The HY29F800A provides several methods of protection to prevent accidental erasure or programming which might otherwise be caused by spurious system level signals during VCC power-up and
power-down transitions, or from system noise.
These methods are described in the sections that
follow.
Command Sequences
Commands that may alter array data require a
sequence of cycles as described in Table 5. This
provides data protection against inadvertent writes.
Low VCC Write Inhibit
To protect data during VCC power-up and powerdown, the device does not accept write cycles
when VCC is less than VLKO (typically 3.7 volts). The
command register and all internal program/erase
circuits are disabled, and the device resets to the
Read mode. Writes are ignored until VCC is greater
than VLKO . The system must provide the proper
signals to the control pins to prevent unintentional
writes when VCC is greater than VLKO.
Rev. 1.1/Feb 02
Write Pulse “Glitch” Protection
Noise pulses of less than 5 ns (typical) on OE#,
CE# or WE# do not initiate a write cycle.
Logical Inhibit
Write cycles are inhibited by asserting any one of
the following conditions: OE# = VIL , CE# = VIH, or
WE# = VIH. To initiate a write cycle, CE# and WE#
must be a logical zero while OE# is a logical one.
Power-Up Write Inhibit
If WE# = CE# = VIL and OE# = VIH during power
up, the device does not accept commands on the
rising edge of WE#. The internal state machine is
automatically reset to the Read mode on powerup.
Sector Protection
Additional data protection is provided by the
HY29F800A’s sector protect feature, described
previously, which can be used to protect sensitive
areas of the Flash array from accidental or unauthorized attempts to alter the data.
19
HY29F800A
ABSOLUTE MAXIMUM RATINGS 4
Sy mb o l
Par amet er
Valu e
Un it
TSTG
Storage Temperature
-65 to +125
ºC
TBIAS
Ambient Temperature with Power Applied
-55 to +125
ºC
VIN2
Voltage on Pin with Respect to VSS :
VCC 1
A[9], OE#, RESET# 2
All Other Pins 1
-2.0 to +7.0
-2.0 to +12.5
-2.0 to +7.0
V
V
V
I OS
Output Short Circuit Current 3
200
mA
Notes:
1. Minimum DC voltage on input or I/O pins is –0.5 V. During voltage transitions, input or I/O pins may undershoot VSS to
-2.0V for periods of up to 20 ns. See Figure 9. Maximum DC voltage on input or I/O pins is VCC + 0.5 V. During voltage
transitions, input or I/O pins may overshoot to VCC +2.0 V for periods up to 20 ns. See Figure 10.
2. Minimum DC input voltage on pins A[9], OE#, and RESET# is -0.5 V. During voltage transitions, A[9], OE#, and RESET#
may undershoot VSS to –2.0 V for periods of up to 20 ns. See Figure 9. Maximum DC input voltage on these pins is +12.5
V which may overshoot to 14.0 V for periods up to 20 ns.
3. No more than one output at a time may be shorted to VSS. Duration of the short circuit should be less than one second.
4. Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for
extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS 1
Symbol
TA
V CC
Parameter
Ambient Operating Temperature:
Operating Supply Voltage:
-50 Versions
All Other Versions
Value
Unit
0 to +70
ºC
+4.75 to +5.25
+4.50 to +5.50
V
V
Notes:
1. Recommended Operating Conditions define those limits between which the functionality of the device is guaranteed.
20 ns
20 ns
20 ns
V C C + 2.0 V
0.8 V
- 0.5 V
V C C + 0.5 V
2.0 V
- 2.0 V
20 ns
Figure 9. Maximum Undershoot Waveform
20
20 ns
20 ns
Figure 10. Maximum Overshoot Waveform
Rev. 1.1/Feb 02
HY29F800A
DC CHARACTERISTICS
TTL/NMOS Compatible
Par amet er
Des c r ip t io n
ILI
Input Load Current
ILIT
Input Load Current
A[9], OE#, RESET#
ILO
Output Leakage Current
ICC1
VCC Active Read Current 1, 2
ICC2
ICC3
ICC4
VIL
VIH
VID
VOL
VOH
VLKO
Tes t Set u p
VIN = VSS to VCC,
VCC = VCC Max
VCC = VCC Max; A[9] =
OE# = RESET# = 12.5 V
VOUT = VSS to VCC,
VCC = VCC Max
CE# = VIL, OE# = VIH,
f = 5MHz, Byte Mode
CE# = VIL, OE# = VIH,
f = 5MHz, Word Mode
CE# = VIL, OE# = VIH
OE# = CE# = RESET#
= VIH
VCC Active Write Current 2, 3, 4
VCC CE# Controlled
TTL Standby Current 2
VCC RESET# Controlled
RESET# = VIL
TTL Standby Current 2
Input Low Voltage
Input High Voltage
Voltage for Electronic ID and
VCC = 5.0V
Temporary Sector Unprotect
VCC = VCC Min,
Output Low Voltage
IOL = 5.8 mA
VCC = VCC Min,
Output High Voltage
IOH = -2.5 mA
Low VCC Lockout Voltage4
Mi n
Ty p
Max
Un it
±1.0
µA
35
µA
±1.0
µA
19
40
mA
19
50
mA
36
60
mA
0.4
1.0
mA
0.4
1.0
mA
-0.5
2.0
0.8
VCC + 0.5
V
V
11.5
12.5
V
0.45
V
2.4
3.2
V
4.2
V
Notes:
1. The ICC current is listed is typically less than 2 mA/MHz with OE# at VIH.
2. Maximum ICC specifications are tested with VCC = VCC Max.
3. ICC active while the Automatic Erase or Automatic Program algorithm is in progress.
4. Not 100% tested.
Rev. 1.1/Feb 02
21
HY29F800A
DC CHARACTERISTICS
CMOS Compatible
Par amet er
Des c r ip t io n
Tes t Set u p
ILI
Input Load Current
VIN = VSS to VCC,
VCC = VCC Max
ILIT
Input Load Current
A[9], OE#, RESET#
VCC = VCC Max, A[9] =
OE# = RESET# =12.5 V
ILO
Output Leakage Current
VOUT = VSS to VCC,
VCC = VCC Max
ICC1
VCC Active Read Current 1, 2
Mi n
Ty p
Max
Un it
±1.0
µA
35
µA
±1.0
µA
CE# = VIL, OE# = VIH,
f = 5MHz, Byte Mode
20
40
mA
CE# = VIL, OE# = VIH,
f = 5MHz, Word Mode
28
50
mA
ICC2
VCC Active Write Current 2, 3, 4
CE# = VIL, OE# = VIH
30
50
mA
ICC3
VCC CE# Controlled
CMOS Standby Current 2, 5
VCC = VCC Max, CE# =
RESET# = VCC ± 0.5V
0.3
5
µA
ICC4
VCC RESET# Controlled
CMOS Standby Current 2, 5
VCC = VCC Max,
RESET# = VSS ± 0.5V
0.3
5
µA
VIL
Input Low Voltage
-0.5
0.8
V
VIH
Input High Voltage
0.7 x VCC
VCC + 0.3
V
VID
Voltage for Electronic ID and
Temporary Sector Unprotect
VCC = 5.0V
11.5
12.5
V
VOL
Output Low Voltage
VCC = VCC Min,
IOL = 5.8 mA
0.45
V
VOH
VLKO
Output High Voltage
Low VCC Lockout Voltage 3
VCC = VCC Min,
IOH = -2.5 mA
0.85 x VCC
V
VCC = VCC Min,
IOH = -100 µA
VCC - 0.4
V
3.2
4.2
V
Notes:
1. The ICC current is listed is typically less than 2 mA/MHz with OE# at VIH.
2. Maximum ICC specifications are tested with VCC = VCC Max.
3. ICC active while the Automatic Erase or Automatic Program algorithm is in progress.
4. Not 100% tested.
5. ICC3 = 20 µA maximum for industrial temperature version.
22
Rev. 1.1/Feb 02
HY29F800A
KEY TO SWITCHING WAVEFORMS
WAVEFORM
INPUT S
OUT PUT S
Steady
Changing from H to L
Changing from L to H
Don't Care, Any Change Permitted
Changing, State Unknown
Does Not Apply
Centerline is High Impedance State
(High Z)
TEST CONDITIONS
+ 5V
Table 7. Test Specifications
Test
- 50
Condition
- 55
2.7
KOhm
DEVICE
UNDER
TEST
CL
All diodes
are
1N3064
or
equivalen
6.2
KOhm
- 70
- 90
Unit
Output Load
1 TTL Gate
Output Load Capacitance (CL)
30
100
pF
Input Rise and Fall Times
5
20
ns
Input Signal Low Level
0.0
0.45
V
Input Signal High Level
3.0
2.4
V
1.5
0.8
V
1.5
2.0
V
Low Timing Measurement
Signal Level
High Timing Measurement
Signal Level
Figure 11. Test Setup
3.0 V
Input
1.5 V
1.5 V
Measurement Level
Output
0.0 V
HY29F800A-50, -55 Version
2.4 V
2.0 V
Input
0.45 V
Measurement
Levels
0.8 V
2.0 V
Output
0.8 V
HY29F800A-70, -90 Versions
Figure 12. Input Waveforms and Measurement Levels
Rev. 1.1/Feb 02
23
HY29F800A
AC CHARACTERISTICS
Read Operations
Parameter
Description
JE D E C
Std
tAVAV
tRC
Read Cycle Time 1
tAVQV
tACC
Address to Output Delay
tELQV
tEHQZ
tGLQV
tGHQZ
tCE
tDF
tOE
tDF
Chip Enable to Output Delay
Chip Enable to Output High Z 1
Output Enable to Output Delay
Output Enable to Output High Z 1
Read
Output Enable
Toggle and
Hold Time 1
Data# Polling
Output Hold Time from Addresses, CE#
or OE#, Whichever Occurs First 1
tOEH
tAXQX
tOH
Speed Option
Test Setup
CE# = VIL
OE# = VIL
OE# = VIL
CE# = VIL
- 50 - 55
- 70
- 90
Unit
Min
50
55
70
90
ns
Max
50
55
70
90
ns
Max
Max
Max
Max
Min
50
15
25
15
55
15
25
20
70
20
30
20
90
30
35
20
0
ns
ns
ns
ns
ns
Min
10
ns
Min
0
ns
Notes:
1. Not 100% tested.
tR C
Addresses Stable
Addresses
tA C C
CE#
tO E
OE#
tO E H
WE#
Outputs
tD F
tC E
tO H
Output Valid
RESET#
RY/BY#
0 V
Figure 13. Read Operation Timings
24
Rev. 1.1/Feb 02
HY29F800A
AC CHARACTERISTICS
Hardware Reset (RESET#)
Parameter
JE D E C
Description
Std
tREADY
tREADY
tRP
tRH
tRB
Speed Option
Test Setup
RESET# Pin Low (During Automatic
Algorithms) to Read or Write 1
RESET# Pin Low (NOT During
Automatic Algorithms) to Read or Write 1
RESET# Pulse Width
RESET# High Time Before Read 1
RY/BY# Recovery Time
- 50 - 55
- 70
- 90
Unit
Max
20
µs
Max
500
ns
Min
Min
Min
500
50
0
ns
ns
ns
Notes:
1. Not 100% tested.
RY/BY#
0V
CE#, OE#
tR H
RESET#
tR P
t Ready
Reset Timings NOT During Automatic Algorithms
t Ready
RY/BY#
tRB
CE#, OE#
RESET#
tR P
Reset Timings During Automatic Algorithms
Figure 14. RESET# Timings
Rev. 1.1/Feb 02
25
HY29F800A
AC CHARACTERISTICS
Word/Byte Configuration (BYTE#)
Parameter
JE D E C
Std
tELFL
tELFH
tFLQZ
tFHQV
Speed Option
Description
- 50 - 55
CE# to BYTE# Switching Low
CE# to BYTE# Switching High
BYTE# Switching Low to Output High-Z
BYTE# Switching High to Output Active
Max
Max
Max
Min
- 70
- 90
5
5
15
55
20
55
20
70
20
90
Unit
ns
ns
ns
ns
CE#
OE#
BYTE#
BYTE#
switching
from word to
byte mode
DQ[14:0]
tELFL
Data Output DQ[14:0]
DQ[15]/A-1
Output DQ[15]
Data Output DQ[7:0]
Address Input A-1
tF L Q Z
BYTE#
switching
from byte to
word mode
BYTE#
DQ[14:0]
Data Output DQ[7:0]
DQ[15]/A-1
Data Output DQ[14:0]
Address Input A-1
tE L F H
Data Output DQ[15]
tF H Q V
Figure 15. BYTE# Timings for Read Operations
CE#
Falling edge of the last WE# signal
WE#
t S E T (t A S )
BYTE#
t H O L D (t A H )
Note: Refer to the Program/Erase Operations table for tAS and tAH specifications.
Figure 16. BYTE# Timings for Write Operations
26
Rev. 1.1/Feb 02
HY29F800A
AC CHARACTERISTICS
Program and Erase Operations
Parameter
Speed Option
Description
JE D E C
Std
tAVAV
tAVWL
tWLAX
tDVWH
tWHDX
tGHWL
tELWL
tWHEH
tWLWH
tWHWL
tWC
tAS
tAH
tDS
tDH
tGHWL
tCS
tCH
tWP
tWPH
tWHWH1
tWHWH1 Programming Operation 1, 2, 3
- 50 - 55
Write Cycle Time 1
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Read Recovery Time Before Write
CE# Setup Time
CE# Hold Time
Write Pulse Width
Write Pulse Width High
Byte Mode
Word
Mode
Byte Mode
Chip Programming Operation
tWHWH2
tWHWH2 Sector Erase Operation 1, 2, 4
tWHWH3
tWHWH3 Chip Erase Operation 1, 2, 4
1, 2, 3, 5
Erase and Program Cycle Endurance
tVCS
tRB
tBUSY
VCC Setup Time
Recovery Time from RY/BY#
WE# to RY/BY# Delay
Word
Mode
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Typ
Max
Typ
Max
Typ
Max
Typ
Max
Typ
Max
Typ
Max
Typ
Min
Min
Min
Min
50
55
- 70
- 90
70
90
45
30
45
45
40
45
0
45
25
45
25
0
0
0
0
35
40
30
20
7
300
12
500
7.2
21.6
6.3
18.6
1
8
19
150
1,000,000
100,000
50
0
30
30
35
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
µs
se c
se c
se c
se c
se c
se c
se c
se c
cycles
cycles
µs
ns
ns
Notes:
1. Not 100% tested.
2. Typical program and erase times assume the following conditions: 25 °C, VCC = 5.0 volts, 100,000 cycles. In addition,
programming typicals assume a checkerboard pattern. Maximum program and erase times are under worst case conditions of 90 °C, VCC = 4.5 volts (4.75 volts for 50 ns version), 100,000 cycles.
3. Excludes system-level overhead, which is the time required to execute the four-bus-cycle sequence for the program
command. See Table 5 for further information on command sequences.
4. Excludes 0x00 programming prior to erasure. In the preprogramming step of the Automatic Erase algorithm, all bytes are
programmed to 0x00 before erasure.
5. The typical chip programming time is considerably less than the maximum chip programming time listed since most bytes
program faster than the maximum programming times specified. The device sets DQ[5] = 1 only If the maximum byte
program time specified is exceeded. See Write Operation Status section for additional information.
Rev. 1.1/Feb 02
27
HY29F800A
AC CHARACTERISTICS
Program Command Sequence (last two cycles)
tW C
Addresses
tA S
0x555
Read Status Data (last two cycles)
tA H
PA
PA
PA
CE#
tG H W L
OE#
tC H
tW P
WE#
tC S
tW P H
tD S
tW H W H 1
tD H
0xA0
Data
PD
Status
tB U S Y
D OUT
tR B
RY/BY#
V CC
tV C S
Notes:
1. PA = Program Address, PD = Program Data, DOUT is the true data at the program address.
2. Commands shown are for Word mode operation.
3. VCC shown only to illustrate tVCS measurement references. It cannot occur as shown during a valid command sequence.
Figure 17. Program Operation Timings
28
Rev. 1.1/Feb 02
HY29F800A
AC CHARACTERISTICS
Erase Command Sequence (last two cycles)
tW C
Addresses
tA S
0x2AA
Read Status Data (last two cycles)
tA H
SA
VA
VA
Address = 0x555
for chip erase
CE#
tG H W L
OE#
tC H
tW P
WE#
tC S
tW P H
tD S
Data = 0x10
for chip erase
tD H
Data
0x55
0x30
t W H W H 2 or
tW H W H 3
Status
tB U S Y
D OUT
tR B
RY/BY#
V CC
tV C S
Notes:
1. SA =Sector Address (for sector erase), VA = Valid Address for reading status data (see Write Operation Status section),
DOUT is the true data at the read address.(0xFF after an erase operation).
2. Commands shown are for Word mode operation.
3. VCC shown only to illustrate tVCS measurement references. It cannot occur as shown during a valid command sequence.
Figure 18. Sector/Chip Erase Operation Timings
Rev. 1.1/Feb 02
29
HY29F800A
AC CHARACTERISTICS
tR C
VA
Addresses
VA
VA
tA C C
tC H
CE#
tC E
OE#
tD F
tO E H
WE#
tO E
tO H
DQ[7]
Complement
DQ[6:0]
Status Data
Complement
Status Data
True
Valid Data
Data
Valid Data
tB U S Y
RY/BY#
Notes:
1. VA = Valid Address for reading Data# Polling status data (see Write Operation Status section).
2. Illustration shows first status cycle after command sequence, last status read cycle and array data read cycle.
Figure 19. Data# Polling Timings (During Automatic Algorithms)
tR C
VA
Addresses
VA
VA
VA
Valid Data
tA C C
tC H
CE#
tC E
OE#
tD F
tO E H
WE#
tO E
DQ[6], [2]
tB U S Y
tO H
Valid Status
Valid Status
Valid Status
(first read)
(second read)
(stops toggling)
RY/BY#
Notes:
1. VA = Valid Address for reading Toggle Bits (DQ2, DQ6) status data (see Write Operation Status section).
2. Illustration shows first two status read cycles after command sequence, last status read cycle and array data read cycle.
Figure 20. Toggle Polling Timings (During Automatic Algorithms)
30
Rev. 1.1/Feb 02
HY29F800A
AC CHARACTERISTICS
Enter Automatic
Erase
Erase
Suspend
WE#
Erase
Erase
Suspend
Read
Enter Erase
Suspend
Program
Erase
Resume
Erase
Suspend
Program
Erase
Suspend
Read
Erase
Complete
Erase
DQ[6]
DQ[2]
Notes:
1. The system may use CE# or OE# to toggle DQ[2] and DQ[6]. DQ[2] toggles only when read at an address within an
erase-suspended sector.
Figure 21. DQ[2] and DQ[6] Operation
Sector Protect and Unprotect, Temporary Sector Unprotect
Parameter
JE D E C
Std
tST
tRSP
tCE
tOE
tVIDR
tVLHT
tWPP1
tWPP2
tOESP
tCSP
Speed Option
Description
Voltage Setup Time
RESET# Setup Time for
Temporary Sector Unprotect
Chip Enable to Output Delay
Output Enable to Output Delay
VID Transition Time forTemporary Sector Unprotect 1
VID Transition Time for Sector Protect and Unprotect 1
Write Pulse Width for Sector Protect
Write Pulse Width for Sector Unprotect
OE# Setup Time to WE# Active 1
CE# Setup Time to WE# Active 1
- 50 - 55
- 70
- 90
Unit
Min
4
µs
Min
4
µs
Max
Max
Min
Min
Min
Min
Min
Min
50
25
55
25
70
30
500
500
100
100
4
4
90
35
ns
ns
ns
ns
µs
ms
µs
µs
Notes:
1. Not 100% tested.
V ID
RESET#
0 or 5V
0 or 5V
t VIDR
t VIDR
CE#
WE#
tR S P
RY/BY#
Figure 22. Temporary Sector Unprotect Timings
Rev. 1.1/Feb 02
31
HY29F800A
AC CHARACTERISTICS
Sector Protect Cycle
A[18:12]
Protect Verify Cycle
SA X
SA Y
A[0]
A[1]
A[6]
t
V ID V L H T
A[9]
tV L H T
tS T
tV L H T
V ID
OE#
tO E S P
tV L H T
tW P P 1
tS T
WE#
tO E
CE#
Data
0x01
RESET#
tS T
tS T
V CC
Figure 23. Sector Protect Timings
32
Rev. 1.1/Feb 02
HY29F800A
AC CHARACTERISTICS
Sector Unprotect Cycle
Unprotect Verify Cycle
SA 0
A[18:12]
SA 1
A[0]
A[1]
A[6]
V ID
A[9]
tV L H T
tS T
tV L H T
V ID
tS T
OE#
tO E
tO E S P
V ID
CE#
tC S P
tW P P 2
tC E
WE#
Data
0x00
RESET#
V CC
tS T
Figure 24. Sector Unprotect Timings
Rev. 1.1/Feb 02
33
HY29F800A
AC CHARACTERISTICS
Alternate CE# Controlled Erase/Program Operations
Parameter
Speed Option
Description
JE D E C
Std
tAVAV
tAVEL
tELAX
tDVEH
tEHDX
tGHEL
tWLEL
tEHWH
tELEH
tEHEL
tWC
tAS
tAH
tDS
tDH
tGHEL
tWS
tWH
tCP
tCPH
tWHWH1
tWHWH1 Programming Operation 1, 2, 3
- 50 - 55
Write Cycle Time 1
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Read Recovery Time Before Write
WE# Setup Time
WE# Hold Time
CE# Pulse Width
CE# Pulse Width High
Byte Mode
Word
Mode
Byte Mode
Chip Programming Operation 1, 2, 3, 5
tWHWH2
tWHWH2 Sector Erase Operation 1, 2, 4
tWHWH3
tWHWH3 Chip Erase Operation 1, 2, 4
Erase and Program Cycle Endurance
tBUSY
CE# to RY/BY# Delay
Word
Mode
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Typ
Max
Typ
Max
Typ
Max
Typ
Max
Typ
Max
Typ
Max
Typ
Min
Min
50
55
45
25
45
25
- 70
- 90
70
90
45
30
45
45
35
45
0
0
0
0
0
30
30
30
20
7
300
12
500
7.2
21.6
6.3
18.6
1
8
19
150
1,000,000
100,000
30
30
35
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
µs
se c
se c
se c
se c
se c
se c
se c
se c
cycles
cycles
ns
Notes:
1. Not 100% tested.
2. Typical program and erase times assume the following conditions: 25 °C, VCC = 5.0 volts, 100,000 cycles. In addition,
programming typicals assume a checkerboard pattern. Maximum program and erase times are under worst case conditions of 90 °C, VCC = 4.5 volts (4.75 volts for 50 ns version), 100,000 cycles.
3. Excludes system-level overhead, which is the time required to execute the four-bus-cycle sequence for the program
command. See Table 5 for further information on command sequences.
4. Excludes 0x00 programming prior to erasure. In the preprogramming step of the Automatic Erase algorithm, all bytes are
programmed to 0x00 before erasure.
5. The typical chip programming time is considerably less than the maximum chip programming time listed since most bytes
program faster than the maximum programming times specified. The device sets DQ[5] = 1 only If the maximum byte
program time specified is exceeded. See Write Operation Status section for additional information.
34
Rev. 1.1/Feb 02
HY29F800A
AC CHARACTERISTICS
0x555 for Program
0x2AA for Erase
PA for Program
SA for Sector Erase
0x555 for Chip Erase
Addresses
VA
tW C
tA S
tA H
WE#
tG H E L
tW H
OE#
tW S
tC P
tC P H
t W H W H 1 or t W H W H 2 or t W H W H 3
CE#
tD S
tD H
tB U S Y
Data
Status
0xA0 for Program
0x55 for Erase
D OUT
PD for Program
0x30 for Sector Erase
0x10 for Chip Erase
RY/BY#
tR H
RESET#
Notes:
1. PA = program address, PD = program data, VA = Valid Address for reading program or erase status (see Write Operation Status section), DOUT = array data read at VA.
2.
Illustration shows the last two cycles of the program or erase command sequence and the last status read cycle.
3.
Word mode addressing shown.
4.
RESET# shown only to illustrate tRH measurement references. It cannot occur as shown during a valid command
sequence.
Figure 25. Alternate CE# Controlled Write Operation Timings
Rev. 1.1/Feb 02
35
HY29F800A
Latchup Characteristics
Mi n i mu m
Max imu m
Un it
Input voltage with respect to VSS on all I/O pins
Des c r ip t io n
- 1.0
VCC + 1.0
V
VCC Current
- 100
100
mA
Notes:
1. Includes all pins except VCC. Test conditions: VCC = 5.0V, one pin at a time.
TSOP and PSOP Pin Capacitance
Sy mb o l
CIN
Par amet er
Input Capacitance
COUT
Output Capacitance
CIN2
Control Pin Capacitance
Tes t Set u p
Ty p
Max
Un it
VIN = 0
6
7.5
pF
VOUT = 0
8.5
12
pF
VIN = 0
7.5
9
pF
Tes t Co n d it io n s
Mi n i mu m
Un it
150 ºC
10
Years
125 ºC
20
Years
Notes:
1. Sampled, not 100% tested.
2. Test conditions: TA = 25 ºC, f = 1.0 MHz.
Data Retention
Par amet er
Minimum Pattern Data Retention Time
36
Rev. 1.1/Feb 02
HY29F800A
PACKAGE DRAWINGS
Physical Dimensions
TSOP48 - 48-pin Thin Small Outline Package (measurements in millimeters)
0.95
1.05
Pin 1 ID
1
48
0.50 BSC
11.90
12.10
24
25
18.30
18.50
0.05
0.15
19.80
20.20
0.08
0.20
1.20
MAX
0.10
0.21
o
0.25MM (0.0098") BSC
0
o
5
0.50
0.70
PSOP44 - 44-pin Plastic Small Outline Package (measurements in millimeters)
23
44
15.70
16.30
13.10
13.50
0.10
0.21
O
0
O
8
1
0.60
1.00
22
1.27 NOM.
28.00
28.40
2.17
2.45
2.80
MAX.
SEATING PLANE
0.35
0.50
Rev. 1.1/Feb 02
0.10
0.35
37
HY29F800A
ORDERING INFORMATION
Hynix products are available in several speeds, packages and operating temperature ranges. The
ordering part number is formed by combining a number of fields, as indicated below. Refer to the ‘Valid
Combinations’ table, which lists the configurations that are planned to be supported in volume. Please
contact your local Hynix representative or distributor to confirm current availability of specific configurations and to determine if additional configurations have been released.
HY29F800A X
X
-
X
X
X
SPECIAL INSTRUCTIONS
TEMPERATURE RANGE
Blank = Commercial ( 0 to +70 °C)
I = Industrial ( -40 to +85 °C)
SPEED OPTION
55
70
90
12
=
=
=
=
55 ns
70 ns
90 ns
120 ns
PACKAGE TYPE
G = 44-Pin Plastic Small Outline Package (PSOP)
T = 48-Pin Thin Small Outline Package (TSOP)
R = 48-Pin Thin Small Outline Package (TSOP) with
Reverse Pinout
BOOT BLOCK LOCATION
T= Top Boot Block Option
B= Bottom Boot Block Option
DEVICE NUMBER
HY29F800A = 8 Megabit (1M x 8/512K x 16) CMOS 5 Volt-Only
Sector Erase Flash Memory
VALID COMBINATIONS
P ackag e an d S p eed
PSOP
Temperature
Commercial
Industrial
TSOP
Reverse TSOP
50 n s 55 n s 70 n s 90 n s 50 n s 55 n s 70 n s 90 n s 50 n s 55 n s 70 n s 90 n s
G-50 G-55 G-70
G-50I G-55I G-70I
G-90
G-90I
T-50 T-55 T-70
T-50I T-55I T-70I
T-90
T-90I
R-50 R-55 R-70
R-50I R-55I R-70I
R-90
R-90I
Note:
1. The complete part number is formed by appending the Boot Block Location code and the suffix shown in the table to the
Device Number. For example, the part number for a 90 ns, Commercial temperature range device in the TSOP package
with the top boot block option is HY29F800ATT-90.
38
Rev. 1.1/Feb 02
HY29F800A
Important Notice
© 2001 by Hynix Semiconductor America. All rights reserved.
No part of this document may be copied or reproduced in any
form or by any means without the prior written consent of Hynix
Semiconductor Inc. or Hynix Semiconductor America (collectively “Hynix”).
tions of Sale only. Hynix makes no warranty, express, statutory, implied or by description, regarding the information set
forth herein or regarding the freedom of the described devices
from intellectual property infringement. Hynix makes no warranty of merchantability or fitness for any purpose.
The information in this document is subject to change without
notice. Hynix shall not be responsible for any errors that may
appear in this document and makes no commitment to update
or keep current the information contained in this document.
Hynix advises its customers to obtain the latest version of the
device specification to verify, before placing orders, that the
information being relied upon by the customer is current.
Hynix’s products are not authorized for use as critical components in life support devices or systems unless a specific written agreement pertaining to such intended use is executed
between the customer and Hynix prior to use. Life support
devices or systems are those which are intended for surgical
implantation into the body, or which sustain life whose failure to
perform, when properly used in accordance with instructions
for use provided in the labeling, can be reasonably expected to
result in significant injury to the user.
Devices sold by Hynix are covered by warranty and patent indemnification provisions appearing in Hynix Terms and Condi-
Rev. 1.1/Feb 02
39
HY29F800A
R evision R ecord
R ev.
D ate
1.0
1/02
Ini ti al release.
D etails
1.1
2/02
C hange A ccess speed from55ns, 70ns, 90ns, 120ns to 50ns, 55ns, 70ns, 90ns
The E rase and P rogram parameters were changed wi th the faster speed
Flash Memory Business Unit, Korea
Hynix Semiconductor Inc.
891, Daechi-dong
Kangnam-gu
Seoul, Korea
Telephone: +82-2-3459-5980
Fax: +82-2-3459-5988
http://www.hynix.com
40
Flash Memory Business Unit HQ
Hynix Semiconductor Inc.
3101 North First Street
San Jose, CA 95134
USA
Telephone: (408) 232-8800
Fax: (408) 232-8805
http://www.us.hynix.com
Rev. 1.1/Feb 02