IRLML5203PbF
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Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Low Gate Charge
Lead-Free
RoHS Compliant, Halogen-Free
HEXFET® Power MOSFET
Description
Package Type
IRLML5203TRPbF
Micro3™ (SOT-23)
RDS(on) max (mW)
ID
-30V
98@VGS = -10V
-3.0A
165@VGS = -4.5V
-2.6A
G 1
These P-channel MOSFETs from International Rectifier utilize
advanced processing techniques to achieve the extremely low
on-resistance per silicon area. This benefit provides the
designer with an extremely efficient device for use in battery
and load management applications.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to produce a
HEXFET Power MOSFET with the industry's smallest footprint.
This package, dubbed the Micro3TM, is ideal for applications
where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro3 allows it to fit easily into
extremely thin application environments such as portable
electronics and PCMCIA cards. The thermal resistance and
power dissipation are the best available.
Base Part Number
VDSS
3 D
S
2
Micro3TM
Standard Pack
Form
Quantity
Tape and Reel
3000
Orderable Part Number
IRLML5203TRPbF
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
-30
-3.0
-2.4
-24
1.25
0.80
10
± 20
-55 to + 150
V
mW/°C
V
°C
Max.
Units
100
°C/W
A
W
Thermal Resistance
Parameter
RθJA
1
Maximum Junction-to-Ambient
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IRLML5203PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
ΔV(BR)DSS/ΔTJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
I GSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-30
–––
–––
–––
-1.0
3.1
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.019
–––
–––
–––
–––
–––
–––
–––
–––
9.5
2.3
1.6
12
18
88
52
510
71
43
Max. Units
Conditions
–––
V
VGS = 0V, ID = -250μA
––– V/°C Reference to 25°C, I D = -1mA
98
VGS = -10V, ID = -3.0A
mΩ
165
VGS = -4.5V, ID = -2.6A
-2.5
V
VDS = VGS, ID = -250μA
–––
S
VDS = -10V, ID = -3.0A
-1.0
VDS = -24V, VGS = 0V
µA
-5.0
VDS = -24V, VGS = 0V, TJ = 70°C
-100
VGS = -20V
nA
100
VGS = 20V
14
ID = -3.0A
3.5
nC
VDS = -24V
2.4
VGS = -10V
–––
VDD = -15V
–––
ID = -1.0A
ns
–––
R G = 6.0Ω
–––
VGS = -10V
–––
VGS = 0V
–––
pF
VDS = -25V
–––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
-1.3
-24
–––
–––
–––
–––
17
12
-1.2
26
18
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = -1.3A, VGS = 0V
TJ = 25°C, IF = -1.3A
di/dt = -100A/μs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Surface mounted on FR-4 board, t ≤ 5sec.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
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IRLML5203PbF
100
100
VGS
-15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
BOTTOM -2.7V
10
1
-2.70V
0.1
20μs PULSE WIDTH
TJ = 25 °C
0.01
0.1
1
10
10
1
-2.70V
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
2.0
10
TJ = 150 ° C
1
TJ = 25 ° C
V DS = -15V
20μs PULSE WIDTH
5.0
6.0
7.0
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
3
10
100
Fig 2. Typical Output Characteristics
100
4.0
1
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
3.0
20μs PULSE WIDTH
TJ = 150 °C
0.1
0.1
100
-VDS , Drain-to-Source Voltage (V)
0.1
2.0
VGS
-15V
-10V
-7.0V
-5.5V
-4.5V
-4.0V
-3.5V
BOTTOM -2.7V
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
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ID = 3.0A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRLML5203PbF
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
600
Ciss
400
200
Coss
Crss
0
1
10
20
-VGS , Gate-to-Source Voltage (V)
800
12
8
4
0
4
8
12
16
QG , Total Gate Charge (nC)
-VDS , Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
-II D , Drain Current (A)
-ISD , Reverse Drain Current (A)
VDS =-24V
VDS =-15V
16
0
100
ID = -3.0A
TJ = 150 ° C
1
TJ = 25 ° C
0.1
0.4
V GS = 0 V
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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10us
10
100us
1ms
1
10ms
TA = 25 ° C
TJ = 150 ° C
Single Pulse
0.1
0.1
1
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRLML5203PbF
3.0
VDS
-ID , Drain Current (A)
VGS
D.U.T.
RG
2.0
RD
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
1.0
Fig 10a. Switching Time Test Circuit
td(on)
0.0
tr
t d(off)
tf
VGS
25
50
75
100
125
TC , Case Temperature ( ° C)
10%
150
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
1000
100
D = 0.50
0.20
0.10
10
0.05
PDM
0.02
0.01
1
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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0.14
0.13
0.12
0.11
0.10
ID = -3.0A
0.09
0.08
0.07
4.0
6.0
8.0
10.0
12.0
14.0
16.0
-V GS, Gate -to -Source Voltage (V)
RDS (on) , Drain-to-Source On Resistance (Ω)
RDS(on) , Drain-to -Source On Resistance ( Ω)
IRLML5203PbF
0.40
0.30
VGS = -4.5V
0.20
VGS = -10V
0.10
0.00
0
4
8
12
16
-I D , Drain Current (A)
Fig 11. Typical On-Resistance Vs. Gate
Voltage
Fig 12. Typical On-Resistance Vs. Drain
Current
Current Regulator
Same Type as D.U.T.
50KΩ
QG
QGS
.2μF
.3μF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
12V
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IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRLML5203PbF
30
-VGS(th) , Variace ( V )
2.5
20
Power (W)
ID = -250μA
2.0
10
0
1.5
-75
-50
-25
0
25
50
75
100
125
150
T J , Temperature ( °C )
Fig 14. Threshold Voltage Vs. Temperature
7
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0.001
0.010
0.100
1.000
10.000
100.000
Time (sec)
Fig 15. Typical Power Vs. Time
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IRLML5203PbF
Micro3 (SOT-23) (Lead-Free) Package Outline
Dimensions are shown in millimeters (inches)
S
Y
M
B
O
L
6
5
D
3
6
ccc
2
B
e
A
A1
A2
b
c
E
E1
1
DIME NSIONS
C B A
D
E
E1
e
5
e1
L
L1
0
aaa
e1
bbb
ccc
4
MILLIME T ERS
MAX
MIN
1.12
0.89
0.10
0.01
1.02
0.88
0.50
0.30
0.20
0.08
3.04
2.80
2.64
2.10
1.40
1.20
0.95 BSC
1.90 BSC
0.40
0.60
INCHES
MIN
MAX
.044
.036
.0004
.0039
.035
.040
.0196
.0119
.0078
.0032
.119
.111
.103
.083
.048
.055
.0375 BSC
.075 BSC
.0158
.0236
0.25 BS C
0°
8°
0.10
0.20
0.15
.0118 BSC
0°
8°
.004
.008
.006
H
A A2
L1
3X b
A1
bbb
aaa C
C A B
3 S URF
0
7
3X L
RECOMMENDED FOOT PRINT
NOT ES
1. DIMENS IONING AND T OLERANCING PER ASME Y14.5M-1994.
0.972
3X [.038]
2. DIMENS IONS ARE S HOWN IN MILLIMETERS AND INCHES .
2.742
[.1079]
3. CONT ROLLING DIMENS ION: MILLIMET ER.
4 DATUM PLANE H IS LOCATED AT T HE MOLD PART ING LINE.
5 DATUM A AND B T O B E DET ERMINED AT DAT UM PLANE H.
6 DIMENS IONS D AND E1 ARE MEAS URED AT DAT UM PLANE H.
7 DIMENS ION L IS T HE LEAD LENGTH FOR S OLDERING T O A S UBS T RATE.
8. OUT LINE CONFORMS TO JEDEC OUT LINE T O-236AB.
0.95
[.0375]
0.802
3X
[.031]
1.90
[.075]
Micro3 (SOT-23 / TO-236AB) Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
DATE CODE
PART NUMBER
Cu WIRE
HALOGEN FREE
LEAD-FREE
ASSEMBLY LOT CODE
X = PART NUMBER CODE REFERENCE :
A = IRLML2402
B = IRLML2803
C = IRLML6302
D = IRLML5103
E = IRLML6402
F = IRLML6401
G = IRLML2502
H = IRLML5203
I = IRLML0030
J = IRLML2030
K = IRLML0100
L = IRLML0060
M = IRLML0040
N = IRLML2060
P = IRLML9301
R = IRLML9303
S = IRLML6244
T = IRLML6246
U = IRLML6344
V = IRLML6346
W = IRFML8244
W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
WORK
YEAR
Y
W
WEEK
1
01
A
2011 2001
2012 2002
2
02
B
3
03
C
2013 2003
2014 2004
4
04
D
5
2015 2005
6
2016 2006
2017 2007
7
8
2018 2008
2019 2009
9
0
24
X
2020 2010
25
Y
26
Z
X = IRLML2244
Y = IRLML2246
W = (27-52) IF PRECEDED BY A LETTER
YEAR
Z = IRFML9244
DATE CODE EXAMPLE:
YWW = 432 = DF
YWW = 503 = 5C
2011
2012
2013
2014
2015
2016
2017
2018
2019
2020
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
Y
A
B
C
D
E
F
G
H
J
K
WORK
WEEK
W
27
28
29
30
A
B
C
D
50
51
52
X
Y
Z
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
8
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IRLML5203PbF
Micro3™ Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
1.6 ( .062 )
1.5 ( .060 )
4.1 ( .161 )
3.9 ( .154 )
TR
FEED DIRECTION
1.85 ( .072 )
1.65 ( .065 )
3.55 ( .139 )
3.45 ( .136 )
4.1 ( .161 )
3.9 ( .154 )
1.32 ( .051 )
1.12 ( .045 )
8.3 ( .326 )
7.9 ( .312 )
0.35 ( .013 )
0.25 ( .010 )
1.1 ( .043 )
0.9 ( .036 )
178.00
( 7.008 )
MAX.
9.90 ( .390 )
8.40 ( .331 )
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
9
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IRLML5203PbF
†
Qualification information
Consumer
Qualification level
(per JEDE C JE S D47F
Moisture Sensitivity Level
Micro3™ (SOT-23)
RoHS compliant
††
guidelines)
MS L1
††
(per JEDE C J-S T D-020D )
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
Revision History
Date
Comment
4/28/2014
• Updated data sheet with new IR corporate template.
• Updated package outline & part marking on page 8.
• Added Qualification table -Qual level "Consumer" on page 10.
• Added bullet point in the Benefits "RoHS Compliant, Halogen -Free" on page 1.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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