PHILIPS BUK7610-55AL N-channel trenchmos standard level fet Datasheet

BUK75/7610-55AL
N-channel TrenchMOS™ standard level FET
Rev. 01 — 31 March 2005
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips General-Purpose Automotive (GPA) TrenchMOS™ technology specifically
optimized for linear operation.
1.2 Features
■ TrenchMOS™ technology
■ 175 °C rated
■ Q101 compliant
■ Stable operation in linear mode.
1.3 Applications
■ Automotive systems
■ Repetitive clamped inductive
switching
■ 12 V and 24 V loads.
■ DC linear motor control
1.4 Quick reference data
■ EDS(AL)S ≤ 1.1 J
■ ID ≤ 75 A
■ RDSon = 8.5 mΩ (typ)
■ Ptot ≤ 300 W.
2. Pinning information
Table 1:
Pinning
Pin Description
1
gate (G)
2
drain (D)
3
source (S)
mb
mounting base;
connected to drain (D)
Simplified outline
Symbol
D
mb
mb
G
mbb076
2
1
3
SOT404 (D2PAK)
1 2 3
SOT78 (TO-220AB)
S
BUK75/7610-55AL
Philips Semiconductors
N-channel TrenchMOS™ standard level FET
3. Ordering information
Table 2:
Ordering information
Type number
Package
Name
Description
Version
BUK7510-55AL
TO-220AB
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
SOT78
BUK7610-55AL
D2PAK
Plastic single-ended surface mounted package (D2PAK); 3 leads (one lead SOT404
cropped)
4. Limiting values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
VDS
drain-source voltage (DC)
VDGR
drain-gate voltage (DC)
VGS
gate-source voltage (DC)
drain current (DC)
ID
Conditions
RGS = 20 kΩ
Min
Max
Unit
-
55
V
-
55
V
-
±20
V
Tmb = 25 °C; VGS = 10 V;
Figure 2 and 3
[1] [3]
-
122
A
[2]
-
75
A
Tmb = 100 °C; VGS = 10 V; Figure 2
[2]
-
75
A
IDM
peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
-
490
A
Ptot
total power dissipation
Tmb = 25 °C; Figure 1
-
300
W
Tstg
storage temperature
−55
+175
°C
Tj
junction temperature
−55
+175
°C
[1] [3]
-
122
A
[2]
Source-drain diode
reverse drain current (DC)
IDR
peak reverse drain current
IDRM
Tmb = 25 °C
-
75
A
Tmb = 25 °C; pulsed; tp ≤ 10 µs
-
490
A
unclamped inductive load; ID = 75 A;
VDS ≤ 55 V; RGS = 50 Ω; VGS = 10 V;
starting at Tj = 25 °C
-
1.1
J
-
[4]
-
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
EDS(AL)R repetitive drain-source avalanche
energy
[1]
Current is limited by power dissipation chip rating.
[2]
Continuous current is limited by package.
[3]
Refer to document 9397 750 12572 for further information.
[4]
a)
b)
c)
d)
Max value not quoted. Repetitive rating defined in Figure 16.
Single-shot avalanche rating limited by Tj(max) of 175 °C.
Repetitive avalanche rating limited by Tj(avg) of 170 °C.
Refer to application note AN10273 for further information.
9397 750 14362
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 31 March 2005
2 of 14
BUK75/7610-55AL
Philips Semiconductors
N-channel TrenchMOS™ standard level FET
03aa16
120
003aaa726
150
Pder
(%)
ID
(A)
80
100
(1)
40
50
0
0
0
50
100
150
Tmb (°C)
200
0
50
100
150
Tmb (°C)
200
VGS ≥ 5 V
P tot
P der = ----------------------- × 100 %
P
°
(1) Capped at 75 A due to package.
tot ( 25 C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
Fig 2. Continuous drain current as a function of
mounting base temperature.
003aaa737
103
Limit RDSon = VDS / ID
ID
(A)
tp = 10 µ s
100 µ s
102
(1)
1 ms
DC
10 ms
10
100 ms
1
1
10
VDS (V)
102
Tmb = 25 °C; IDM is single pulse.
(1) Capped at 75 A due to package.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 14362
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 31 March 2005
3 of 14
BUK75/7610-55AL
Philips Semiconductors
N-channel TrenchMOS™ standard level FET
5. Thermal characteristics
Table 4:
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-mb)
thermal resistance from junction to mounting base
Rth(j-a)
thermal resistance from junction to ambient
Min
Typ
Max
Unit
-
-
0.5
K/W
SOT78 (TO-220AB)
vertical in free air
-
60
-
K/W
SOT404 (D2-PAK)
mounted on a
printed-circuit board;
minimum footprint;
vertical in still air
-
50
-
K/W
5.1 Transient thermal impedance
003aaa734
1
Zth(j-mb)
(K/W) δ = 0.5
10-1
0.2
0.1
0.05
0.02
δ=
P
-2
10
single shot
tp
T
t
tp
T
10-3
10-6
10-5
10-4
10-3
10-2
10-1
tp (s)
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 14362
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 31 March 2005
4 of 14
BUK75/7610-55AL
Philips Semiconductors
N-channel TrenchMOS™ standard level FET
6. Characteristics
Table 5:
Characteristics
Tj = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Tj = 25 °C
55
-
-
V
Tj = −55 °C
50
-
-
V
Static characteristics
V(BR)DSS
VGS(th)
IDSS
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
ID = 250 µA; VGS = 0 V
ID = 1 mA; VDS = VGS; Figure 9 and 10
Tj = 25 °C
2
3
4
V
Tj = 175 °C
1
-
-
V
Tj = −55 °C
-
-
4.4
V
Tj = 25 °C
-
0.05
10
µA
Tj = 175 °C
-
-
500
µA
-
2
100
nA
Tj = 25 °C
-
8.5
10
mΩ
Tj = 175 °C
-
-
20
mΩ
-
124
-
nC
VDS = 55 V; VGS = 0 V
IGSS
gate-source leakage current
VGS = ±20 V; VDS = 0 V
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 25 A; Figure 6 and 8
Dynamic characteristics
Qg(tot)
total gate charge
Qgs
gate-source charge
-
22
-
nC
Qgd
gate-drain (Miller) charge
-
50
-
nC
Vplat
plateau voltage
-
5
-
V
Ciss
input capacitance
-
4710 6280 pF
Coss
output capacitance
-
980
1180
pF
Crss
reverse transfer capacitance
-
560
770
pF
td(on)
turn-on delay time
-
33
-
ns
tr
rise time
-
117
-
ns
td(off)
turn-off delay time
-
132
-
ns
tf
fall time
-
95
-
ns
Ld
internal drain inductance
from drain lead 6 mm from package to
center of die
-
4.5
-
nH
from contact screw on mounting base to
center of die
-
3.5
-
nH
from upper edge of drain mounting base
to center of die SOT404
-
2.5
-
nH
from source lead to source bond pad
-
7.5
-
nH
-
0.85
1.2
V
-
73
-
ns
-
430
-
nC
Ls
internal source inductance
ID = 25 A; VDD = 44 V; VGS = 10 V;
Figure 14
VGS = 0 V; VDS = 25 V; f = 1 MHz;
Figure 12
VDS = 30 V; RL = 1.2 Ω;
VGS = 10 V; RG = 10 Ω
Source-drain diode
VSD
source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 15
trr
reverse recovery time
Qr
recovered charge
IS = 20 A; dIS/dt = −100 A/µs;
VGS = 0 V; VR = 30 V
9397 750 14362
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 31 March 2005
5 of 14
BUK75/7610-55AL
Philips Semiconductors
N-channel TrenchMOS™ standard level FET
003aaa729
400
ID
(A)
RDSon
(mΩ)
20
18
300
16
14
12
14
VGS (V) = 10
9.5
9
8.5
8
7.5
7
6.5
6
5.5
5
4.5
200
100
0
0
2
4
6
10
6
8
VDS (V)
10
5
Tj = 25 °C
10
15
VGS (V)
20
Tj = 25 °C; ID = 25 A
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
003aaa731
20
7
RDSon
(mΩ)
003aaa730
18
8
9
03ne89
2
10
a
15
1.5
10
1
VGS (V) = 20
5
0.5
0
0
100
200
300
ID (A)
400
Tj = 25 °C
0
-60
60
120
Tj (°C)
180
R DSon
a = ----------------------------R DSon ( 25 °C )
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 14362
Product data sheet
0
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 31 March 2005
6 of 14
BUK75/7610-55AL
Philips Semiconductors
N-channel TrenchMOS™ standard level FET
03aa32
5
VGS(th)
(V)
03aa35
10-1
ID
(A)
4
max
10-2
3
typ
10-3
2
min
10-4
min
typ
max
10-5
1
0
-60
10-6
0
60
120
Tj (°C)
0
180
2
4
VGS (V)
6
Tj = 25 °C; VDS = VGS
ID = 1 mA; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
003aaa732
40
gfs
(S)
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
003aaa738
8000
C
(pF)
Ciss
35
6000
30
4000
25
2000
Coss
C
rss
20
0
20
40
60
ID (A)
80
Tj = 25 °C; VDS = 25 V
0
10-1
10
VDS (V)
102
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 14362
Product data sheet
1
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 31 March 2005
7 of 14
BUK75/7610-55AL
Philips Semiconductors
N-channel TrenchMOS™ standard level FET
003aaa733
150
003aaa735
10
VGS
(V)
ID
(A)
8
VDD = 14 V
100
VDD = 44 V
6
4
50
2
Tj = 175 °C
Tj = 25 °C
0
0
0
2
4
6
8
10
VGS (V)
0
50
100
QG (nC)
150
Tj = 25 °C; ID = 25 A
VDS = 25 V
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
003aaa736
150
IS
(A)
100
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
003aaa739
102
(1)
IAV
(A)
(2)
Tj = 25 ˚C
10
150 ˚C
(3)
Tj = 25 °C
50
1
Tj = 175 °C
0
0.0
0.3
0.6
0.9
VSD (V)
1.2
VGS = 0 V
10-1
10-2
10-1
1
tAV (ms)
10
See Table note 4 of Table 3 Limiting values.
(1) Single-shot.
(2) Single-shot.
(3) Repetitive.
Fig 15. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 16. Single-shot and repetitive avalanche rating;
avalanche current as a function of avalanche
period.
9397 750 14362
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 31 March 2005
8 of 14
BUK75/7610-55AL
Philips Semiconductors
N-channel TrenchMOS™ standard level FET
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
E
SOT78
A
A1
p
q
mounting
base
D1
D
L2
L1(1)
Q
b1
L
1
2
3
b
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
b1
c
D
D1
E
e
L
L1(1)
L2
max.
p
q
Q
mm
4.5
4.1
1.39
1.27
0.9
0.6
1.3
1.0
0.7
0.4
15.8
15.2
6.4
5.9
10.3
9.7
2.54
15.0
13.5
3.30
2.79
3.0
3.8
3.6
3.0
2.7
2.6
2.2
Note
1. Terminals in this zone are not tinned.
OUTLINE
VERSION
SOT78
REFERENCES
IEC
JEDEC
JEITA
3-lead TO-220AB
SC-46
EUROPEAN
PROJECTION
ISSUE DATE
01-02-16
03-01-22
Fig 17. Package outline SOT78 (TO-220AB).
9397 750 14362
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 31 March 2005
9 of 14
BUK75/7610-55AL
Philips Semiconductors
N-channel TrenchMOS™ standard level FET
SOT404
Plastic single-ended surface mounted package (D2PAK); 3 leads (one lead cropped)
A
A1
E
mounting
base
D1
D
HD
2
Lp
1
3
c
b
e
e
Q
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
c
D
max.
D1
E
e
Lp
HD
Q
mm
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
11
1.60
1.20
10.30
9.70
2.54
2.90
2.10
15.80
14.80
2.60
2.20
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
EUROPEAN
PROJECTION
ISSUE DATE
04-10-13
05-02-11
SOT404
Fig 18. Package outline SOT404 (D2-PAK).
9397 750 14362
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 31 March 2005
10 of 14
BUK75/7610-55AL
Philips Semiconductors
N-channel TrenchMOS™ standard level FET
8. Mounting
10.85
10.60
10.50
1.50
7.50
7.40
1.70
2.25 2.15
8.15
8.275
8.35
1.50
4.60
0.30
4.85
5.40
7.95
8.075
3.00
0.20
1.20
1.30
1.55
solder lands
solder resist
5.08
MSD057
occupied area
solder paste
Dimensions in mm.
Fig 19. Reflow soldering footprint for SOT404.
9397 750 14362
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 31 March 2005
11 of 14
BUK75/7610-55AL
Philips Semiconductors
N-channel TrenchMOS™ standard level FET
9. Revision history
Table 6:
Revision history
Document ID
Release
date
Data sheet Change
status
notice
BUK75_7610_55AL_1
20050331 Product
data sheet
-
Doc. number
Supersedes
9397 750 14362
-
9397 750 14362
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 31 March 2005
12 of 14
BUK75/7610-55AL
Philips Semiconductors
N-channel TrenchMOS™ standard level FET
10. Data sheet status
Level
Data sheet status [1]
Product status [2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
11. Definitions
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
13. Trademarks
TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V.
12. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
14. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
9397 750 14362
Product data sheet
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Rev. 01 — 31 March 2005
13 of 14
Philips Semiconductors
BUK75/7610-55AL
N-channel TrenchMOS™ standard level FET
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
5.1
6
7
8
9
10
11
12
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Contact information . . . . . . . . . . . . . . . . . . . . 13
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 31 March 2005
Document number: 9397 750 14362
Published in The Netherlands
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