MAC08BT1, MAC08MT1 Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and other light industrial or consumer applications. Supplied in surface mount package for use in automated manufacturing. http://onsemi.com Features • • • • • TRIAC 0.8 AMPERE RMS 200 thru 600 VOLTS Sensitive Gate Trigger Current in Four Trigger Modes Blocking Voltage to 600 Volts Glass Passivated Surface for Reliability and Uniformity Surface Mount Package Pb−Free Packages are Available MT2 MT1 G MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Unit MARKING DIAGRAM V 4 Rating Symbol Peak Repetitive Off−State Voltage (Note 1) (Sine Wave, 50 to 60 Hz, Gate Open, MAC08BT1 TJ = 25 to 110°C) MAC08MT1 VDRM, VRRM On−State Current RMS (TC = 80°C) (Full Sine Wave 50 to 60 Hz) IT(RMS) 0.8 A Peak Non−repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC = 25°C) ITSM 8.0 A Value 200 600 SOT−223 CASE 318E STYLE 11 AYW AC08x G G 1 A Y W AC08X 2 = = = = Assembly Location Year Work Week Device Code x= B or M G = Pb−Free Package (Note: Microdot may be in either location) I2t 0.4 A2s PGM 5.0 W PG(AV) 0.1 W Operating Junction Temperature Range TJ −40 to +110 °C 1 Main Terminal 1 Storage Temperature Range Tstg −40 to +150 °C 2 Main Terminal 2 3 Gate 4 Main Terminal 2 Circuit Fusing Considerations (Pulse Width = 8.3 ms) Peak Gate Power (TC = 80°C, Pulse Width v 1.0 ms) Average Gate Power (TC = 80°C, t = 8.3 ms) 3 PIN ASSIGNMENT Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient PCB Mounted per Figure 1 RqJA 156 °C/W Thermal Resistance, Junction−to−Tab Measured on MT2 Tab Adjacent to Epoxy RqJT 25 °C/W Maximum Device Temperature for Soldering Purposes for 10 Secs Maximum TL 260 °C ORDERING INFORMATION Shipping † Device Package MAC08BT1 SOT−223 1000 Tape & Reel MAC08BT1G SOT−223 (Pb−Free) 1000 Tape & Reel MAC08MT1 SOT−223 1000 Tape & Reel MAC08MT1G SOT−223 (Pb−Free) 1000 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2005 December, 2005 − Rev. 5 1 Publication Order Number: MAC08BT1/D MAC08BT1, MAC08MT1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions.) Characteristic Symbol Min Typ Max Unit − − − − 10 200 mA mA OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) IDRM, IRRM TJ = 25°C TJ = 110°C ON CHARACTERISTICS Peak On−State Voltage (Note 2) (IT = "1.1 A Peak) VTM − − 1.9 V Gate Trigger Current (Continuous dc) All Quadrants (VD = 12 Vdc, RL = 100 W) IGT − − 10 mA Holding Current (Continuous dc) (VD = 12 Vdc, Gate Open, Initiating Current = "20 mA) IH − − 5.0 mA VGT − − 2.0 V (dv/dt)c 1.5 − − V/ms dv/dt 10 − − V/ms Gate Trigger Voltage (Continuous dc) All Quadrants (VD = 12 Vdc, RL = 100 W) DYNAMIC CHARACTERISTICS Critical Rate of Rise of Commutation Voltage (f = 250 Hz, ITM = 1.0 A, Commutating di/dt = 1.5 A/mS On−State Current Duration = 2.0 mS, VDRM = 200 V, Gate Unenergized, TC = 110°C, Gate Source Resistance = 150 W, See Figure 10) Critical Rate−of−Rise of Off State Voltage (Vpk = Rated VDRM, TC= 110°C, Gate Open, Exponential Method) 2. Pulse Test: Pulse Width ≤ 300 msec, Duty Cycle ≤2%. Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol Parameter VTM VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH Holding Current Quadrant 1 MainTerminal 2 + on state IH IRRM at VRRM off state IH Quadrant 3 MainTerminal 2 − http://onsemi.com 2 VTM + Voltage IDRM at VDRM MAC08BT1, MAC08MT1 Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 Quadrant II (+) MT2 (−) IGT GATE Quadrant I (+) IGT GATE MT1 MT1 REF REF IGT − + IGT (−) MT2 Quadrant III (−) MT2 Quadrant IV (+) IGT GATE (−) IGT GATE MT1 MT1 REF REF − MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in−phase signals (using standard AC lines) quadrants I and III are used. 0.15 3.8 0.079 2.0 0.091 2.3 0.091 2.3 0.244 6.2 0.079 2.0 0.984 25.0 0.059 1.5 0.096 2.44 0.059 1.5 0.059 1.5 0.096 2.44 0.059 1.5 inches mm BOARD MOUNTED VERTICALLY IN CINCH 8840 EDGE CONNECTOR. BOARD THICKNESS = 65 MIL., FOIL THICKNESS = 2.5 MIL. MATERIAL: G10 FIBERGLASS BASE EPOXY 0.096 2.44 0.059 1.5 0.472 12.0 Figure 1. PCB for Thermal Impedance and Power Testing of SOT-223 http://onsemi.com 3 10 1.0 0.1 TYPICAL AT TJ = 110°C MAX AT TJ = 110°C MAX AT TJ = 25°C 0.01 0 1.0 2.0 3.0 4.0 vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) Rθ JA , JUNCTION TO AMBIENT THERMAL RESISTANCE, ° C/W IT, INSTANTANEOUS ON-STATE CURRENT (AMPS) MAC08BT1, MAC08MT1 5.0 160 150 140 130 120 110 100 90 80 70 60 50 40 30 DEVICE MOUNTED ON FIGURE 1 AREA = L2 AS SHOWN 1 2 3 MINIMUM FOOTPRINT = 0.076 cm2 0 2.0 T A , MAXIMUM ALLOWABLEAMBIENT TEMPERATURE (° C) 4.0 6.0 FOIL AREA (cm2) 8.0 10 Figure 3. Junction to Ambient Thermal Resistance versus Copper Tab Area 110 110 α 30° 90 90° 80 100 α 60° T A , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE (° C) 100 α = CONDUCTION ANGLE dc 70 α = 180° 60 120° 50 MINIMUM FOOTPRINT 50 OR 60 Hz 40 α = 180° 60 120° 1.0 cm2 50 FOIL AREA 50 OR 60 Hz 40 30 20 0.5 dc 70 20 0.4 0.1 0.2 0.3 IT(RMS), RMS ON-STATE CURRENT (AMPS) 60° 90° 80 30 0 30° 90 α α α = CONDUCTION ANGLE 0 0.1 Figure 4. Current Derating, Minimum Pad Size Reference: Ambient Temperature T A , MAXIMUM ALLOWABLEAMBIENT TEMPERATURE (° C) L 4 PCB WITH TAB AREA Figure 2. On-State Characteristics 0.2 0.3 0.4 0.5 0.6 IT(RMS), RMS ON-STATE CURRENT (AMPS) 0.7 Figure 5. Current Derating, 1.0 cm Square Pad Reference: Ambient Temperature 110 110 α 30° 60° 90 dc 30° α 105 α = CONDUCTION 90° 70 4.0 cm2 FOIL AREA 60 0 0.1 0.2 0.3 0.4 0.5 0.6 IT(RMS), RMS ON-STATE CURRENT (AMPS) 0.7 60° dc 100 ANGLE α = 180° 120° 80 T(tab) , MAXIMUM ALLOWABLE TAB TEMPERATURE (° C) 100 50 L TYPICAL MAXIMUM α = 180° 95 90 REFERENCE: FIGURE 1 85 80 0.8 90° 120° α α α = CONDUCTION ANGLE 0 Figure 6. Current Derating, 2.0 cm Square Pad Reference: Ambient Temperature 0.1 0.2 0.3 0.4 0.5 0.6 IT(RMS), ON-STATE CURRENT (AMPS) Figure 7. Current Derating Reference: MT2 Tab http://onsemi.com 4 0.7 0.8 MAC08BT1, MAC08MT1 1.0 α r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) P(AV), MAXIMUM AVERAGE POWER DISSIPATION (WATTS) 1.0 α 0.9 0.8 α = CONDUCTION 0.7 ANGLE 0.6 120° 0.5 0.4 30° α = 180° 0.3 60° dc 0.2 90° 0.1 0.1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 IT(RMS), RMS ON-STATE CURRENT (AMPS) 0.7 0.01 0.0001 0.8 0.001 Figure 8. Power Dissipation 0.01 0.1 1.0 t, TIME (SECONDS) LL 1N4007 TRIGGER CONTROL MEASURE I CHARGE 100 Figure 9. Thermal Response, Device Mounted on Figure 1 Printed Circuit Board 200 VRMS ADJUST FOR ITM, 60 Hz VAC TRIGGER 10 CHARGE CONTROL NON-POLAR CL RS − ADJUST FOR + dv/dt(c) CS MT2 1N914 51 W G 200 V MT1 Note: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information. Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage (dv/dt)c 10 10 60 Hz 60° 80° 180 Hz COMMUTATING dv/dt dv/dt c , (V/ μ S) COMMUTATING dv/dt dv/dt c , (V/ μ S) 400 Hz 110° ITM 100° tw f= 1.0 1.0 VDRM 1 2 tw 6fI TM (dińdt) c + 1000 1.0 60 10 di/dtc, RATE OF CHANGE OF COMMUTATING CURRENT (A/mS) 300 Hz VDRM = 200 V 70 80 90 100 TJ, JUNCTION TEMPERATURE (°C) Figure 11. Typical Commutating dv/dt versus Current Crossing Rate and Junction Temperature Figure 12. Typical Commutating dv/dt versus Junction Temperature at 0.8 Amps RMS http://onsemi.com 5 110 MAC08BT1, MAC08MT1 60 MAIN TERMINAL #2 POSITIVE 40 MAIN TERMINAL #1 POSITIVE 10 100 1000 RG, GATE − MAIN TERMINAL 1 RESISTANCE (OHMS) IGT4 IGT1 0.1 −40 10,000 Figure 13. Exponential Static dv/dt versus Gate − Main Terminal 1 Resistance 0 20 40 60 80 TJ, JUNCTION TEMPERATURE (°C) 100 VGT , GATE TRIGGER VOLTAGE (VOLTS) 1.1 5.0 4.0 MAIN TERMINAL #2 POSITIVE 3.0 2.0 MAIN TERMINAL #1 POSITIVE 1.0 0 −40 −20 Figure 14. Typical Gate Trigger Current Variation 6.0 IH , HOLDING CURRENT (mA) IGT2 1.0 30 20 IGT3 I GT , GATE TRIGGER CURRENT (mA) 50 STATIC dv/dt (V/ μ s) 10 600 Vpk TJ = 110°C −20 0 20 40 60 80 0.3 −40 100 TJ, JUNCTION TEMPERATURE (°C) VGT3 VGT4 VGT2 VGT1 −20 0 20 40 60 80 TJ, JUNCTION TEMPERATURE (°C) Figure 15. Typical Holding Current Variation Figure 16. Gate Trigger Voltage Variation http://onsemi.com 6 100 MAC08BT1, MAC08MT1 PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. D b1 DIM A A1 b b1 c D E e e1 L1 HE 4 HE 1 2 3 E b e1 e 0.08 (0003) q C q A A1 L1 MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 1.50 6.70 0° MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 1.75 2.00 7.00 7.30 10° − MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.060 0.264 0° INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 0.069 0.276 − MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 0.078 0.287 10° STYLE 11: PIN 1. MT 1 2. MT 2 3. GATE 4. MT 2 SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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