NOT RECOMMENDED FOR NEW DESIGN USE DMP3013SFV DMP3017SFV 30V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 (Type UX) Product Summary RDS(ON) Max ID Max TC = +25°C 10mΩ @ VGS = -10V -40A 18mΩ @ VGS = -4.5V -25A BVDSS -30V Features and Benefits Low RDS(ON) – ensures on-state losses are minimized Small form factor thermally efficient package enables higher density end products Occupies just 33% of the board area occupied by SO-8 enabling smaller end product ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications Mechanical Data ® Case: PowerDI 3333-8 (Type UX) Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) Backlighting Power Management Functions DC-DC Converters D Pin1 S S S G G ESD PROTECTED D Top View D D Gate Protection Diode D Bottom View S Equivalent Circuit Ordering Information (Note 4) Part Number DMP3017SFV-7 DMP3017SFV-13 Notes: Case PowerDI3333-8 (Type UX) PowerDI3333-8 (Type UX) Packaging 2,000/Tape & Reel 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. YYWW Marking Information V17 = Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 17 = 2017) WW = Week Code (01 to 53) V17 PowerDI is a registered trademark of Diodes Incorporated. DMP3017SFV Document number: DS37534 Rev. 3 - 3 1 of 7 www.diodes.com November 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMP3013SFV DMP3017SFV Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = -10V Steady State TA = +25°C TA = +70°C TC = +25°C TC = +70°C ID Steady State Maximum Continuous Body Diode Forward Current (Note 7) Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Pulsed Body Diode Forward Current (10µs Pulse, Duty Cycle = 1%) Avalanche Current (Note 8) L = 1mH Avalanche Energy (Note 8) L = 1mH Continuous Drain Current (Note 7) VGS = -10V Value -30 ±25 -11.5 -9.4 -40 -30 -30 -80 -80 -14 104 ID IS IDM ISM IAS EAS Unit V V A A A A A A mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range TA = +25°C Steady State TA = +25°C Steady State Symbol PD RθJA PD RθJA PD RθJC TJ, TSTG Value 0.94 134 1.94 65 31 4.0 -55 to +150 Unit W °C/W W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -30 — — — — — — -1 ±10 V μA μA VGS = 0V, ID = -250μA VDS = -24V, VGS = 0V VGS = ±25V, VDS = 0V VGS(TH) RDS(ON) — 8.5 15 -0.7 -3.0 10 18 -1.2 V Static Drain-Source On-Resistance -1.0 — — — mΩ VDS = VGS, ID = -250μA VGS = -10V, ID = -11.5A VGS = -4.5V, ID = -8.5A VGS = 0V, IS = -1A — — — — 2,246 352 294 — — — pF pF pF VDS = -15V, VGS = 0V, f = 1.0MHz 5.1 — Ω VDS = 0V, VGS = 0V, f = 1.0MHz — — — — — — — — — — 20.5 41 7.6 8.0 7.5 15.4 45.6 36.8 20 9.5 — — — — — — — — — — nC nC nC nC ns ns ns ns ns nC Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance VSD Ciss Coss Crss Gate Resistance Rg Total Gate Charge (VGS = -5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Qg Qg Qgs Qgd Notes: tD(ON) tR tD(OFF) tF tRR QRR V Test Condition VDS = -15V, ID = -11.5A VDD = -15V, VGS = -10V, RG = 6Ω, ID = -11.5A IS = -11.5A, dI/dt = 100A/μs 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. DMP3017SFV Document number: DS37534 Rev. 3 - 3 2 of 7 www.diodes.com November 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMP3013SFV 2 30.0 VGS = -3.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 1.6 VGS = -4.5V VGS = -5.0V 20.0 VGS = -6.0V VGS = -10V 15.0 VGS = -3.0V 10.0 5.0 VGS = -2.5V VDS = -5V 1.8 VGS = -4.0V 25.0 1.4 1.2 1 0.8 0.6 TJ= 85oC 0.4 VGS = -2.2V TJ= 150oC 0.2 TJ = 125oC 0 1 2 VDS, DRAIN-SOURCE VOLTAGE (V) 0 3 TJ= -55oC RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.02 0.018 0.016 VGS = -4.5V 0.014 0.012 0.01 0.008 VGS = -10V 0.006 0.004 0.002 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) 5 Figure 2. Typical Transfer Characteristic Figure 1. Typical Output Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE () TJ= 25oC 0 0.0 0.1 ID = -11.5A 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 ID = -8.5A 0.01 0 5 10 15 20 25 30 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 0 0.03 5 10 15 20 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 25 1.8 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () DMP3017SFV VGS = -4.5V 0.025 TJ = 0.02 125oC TJ = 150oC TJ = 85oC 0.015 TJ = 25oC 0.01 TJ = -55oC 0.005 1.6 VGS = -5V, ID = -5A 1.4 1.2 1 VGS = -10V, ID = -10A 0.8 0.6 0.4 0.2 0 0 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature DMP3017SFV Document number: DS37534 Rev. 3 - 3 3 of 7 www.diodes.com -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature November 2017 © Diodes Incorporated 0.03 DMP3017SFV 3 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () NOT RECOMMENDED FOR NEW DESIGN USE DMP3013SFV 0.025 0.02 VGS = -5V, ID = -5A 0.015 0.01 VGS = -10V, ID = -10A 0.005 2.5 2 ID = -1mA 1.5 ID = -250µA 1 0.5 0 0 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (℃) -50 150 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature Figure 7. On-Resistance Variation with Temperature 10000 30 f = 1MHz CT, JUNCTION CAPACITANCE (pF) VGS = 0V 25 IS, SOURCE CURRENT (A) 150 20 15 10 TJ = 150oC TJ = 85oC TJ = 125oC 5 TJ = 25oC Ciss 1000 Coss Crss TJ = -55oC 100 0 0 0.3 0.6 0.9 1.2 0 1.5 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current Figure 10. Typical Junction Capacitance 10 100 RDS(ON) Limited PW =100µs 6 4 VDS = -15V, ID = -11.5A 2 10 ID, DRAIN CURRENT (A) VGS (V) 8 PW = 10s 0.1 0.01 0 0 5 10 15 20 25 Qg (nC) 30 35 40 45 Document number: DS37534 Rev. 3 - 3 TJ(Max) = 150℃ TC = 25℃ PW = 1s Single Pulse DUT on 1*MRP PW = 100ms Board PW =10ms VGS = -10V PW = 1ms 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 Figure 12. SOA, Safe Operation Area Figure 11. Gate Charge DMP3017SFV DC 1 4 of 7 www.diodes.com November 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMP3013SFV DMP3017SFV 1 r(t), TRANSIENT THERMAL RESISTANCE D=0.9 D=0.5 D=0.7 D=0.3 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJA (t) = r(t) * RθJA RθJA = 137℃/W Duty Cycle, D = t1/t2 D=Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance DMP3017SFV Document number: DS37534 Rev. 3 - 3 5 of 7 www.diodes.com November 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMP3013SFV DMP3017SFV Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 (Type UX) D A D1 A1 0 E1 E c L E2 E2a k E2b D2 PowerDI3333-8 (Type UX) Dim Min Max Typ A 0.75 0.85 0.80 A1 0.00 0.05 -b 0.25 0.40 0.32 c 0.10 0.25 0.15 D 3.20 3.40 3.30 D1 2.95 3.15 3.05 D2 2.30 2.70 2.50 E 3.20 3.40 3.30 E1 2.95 3.15 3.05 E2 1.60 2.00 1.80 E2a 0.95 1.35 1.15 E2b 0.10 0.30 0.20 e 0.65 BSC k 0.50 0.90 0.70 L 0.30 0.50 0.40 θ 0° 12° 10° All Dimensions in mm L b e Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 (Type UX) X3 8 Y2 X2 Dimensions Value (in mm) C 0.650 X 0.420 X1 0.420 X2 0.230 X3 2.370 Y 0.700 Y1 1.850 Y2 2.250 Y3 3.700 Y4 0.540 Y4 X1 Y1 Y3 Y 1 X DMP3017SFV Document number: DS37534 Rev. 3 - 3 C 6 of 7 www.diodes.com November 2017 © Diodes Incorporated NOT RECOMMENDED FOR NEW DESIGN USE DMP3013SFV DMP3017SFV IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2017, Diodes Incorporated www.diodes.com DMP3017SFV Document number: DS37534 Rev. 3 - 3 7 of 7 www.diodes.com November 2017 © Diodes Incorporated