APT22M100JCU2 ISOTOP® Boost chopper MOSFET + SiC chopper diode Power module VDSS = 1000V RDSon = 400mΩ typ @ Tj = 25°C ID = 22A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch K D Features • G S G • SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF K S Power MOS 8™ MOSFET - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated • • • D ISOTOP® Package (SOT-227) Very low stray inductance High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant ISOTOP® Absolute maximum ratings IDM VGS RDSon PD IAR Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Tc = 25°C Max ratings 1000 22 17 120 ±30 480 463 16 Unit V September, 2009 ID Parameter Drain - Source Breakdown Voltage A V mΩ W A These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APT22M100JCU2 – Rev 0 Symbol VDSS APT22M100JCU2 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic IDSS RDS(on) VGS(th) IGSS Test Conditions Tj = 25°C VDS =1000V VGS = 0V Tj = 125°C VGS = 10V, ID = 16A VGS = VDS, ID = 2.5mA VGS = ±30 V Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Min 3 Typ 400 4 Max 100 500 480 5 ±100 Unit Max Unit µA mΩ V nA Dynamic Characteristics Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VGS = 0V VDS = 25V f = 1MHz Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge VGS = 10V VBus = 500V ID = 16A Td(on) Turn-on Delay Time Tr Td(off) Tf Min Turn-off Delay Time Fall Time pF 260 nC 46 125 39 Resistive switching @ 25°C VGS = 15V VBus = 667V ID = 16A RG = 2.2Ω Rise Time Typ 6800 700 92 35 ns 130 33 SiC chopper diode ratings and characteristics IRM Maximum Reverse Leakage Current Test Conditions VR=1200V Min 1200 Tj = 25°C Tj = 175°C Tc = 100°C Tj = 25°C Tj = 175°C Typ Max 32 56 10 1.6 2.3 200 1000 IF DC Forward Current VF Diode Forward Voltage IF = 10A QC Total Capacitive Charge IF = 10A, VR = 600V di/dt =500A/µs 80 C Total Capacitance f = 1MHz, VR = 200V 96 f = 1MHz, VR = 400V 69 Unit V µA A 1.8 3 V nC pF Symbol Characteristic RthJC RthJA VISOL TJ,TSTG TL Torque Wt Min Junction to Case Thermal Resistance Typ Mosfet SiC Diode Junction to Ambient (IGBT & Diode) RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Storage Temperature Range Max Lead Temp for Soldering:0.063” from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight www.microsemi.com 2500 -40 Max 0.27 1.65 20 September, 2009 Thermal and package characteristics Unit °C/W V 150 300 1.5 29.2 °C N.m g 2-5 APT22M100JCU2 – Rev 0 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage APT22M100JCU2 SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 1.95 (.077) 2.14 (.084) 3.3 (.129) 3.6 (.143) Drain Cathode 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) * Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. 38.0 (1.496) 38.2 (1.504) Source Gate Dimensions in Millimeters and (Inches) Typical Mosfet Performance Curve Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration 0.9 0.2 0.7 0.5 0.1 0.3 0.1 Single P ulse 0.05 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) September, 2009 0 0.00001 www.microsemi.com 3-5 APT22M100JCU2 – Rev 0 Thermal Impedance (°C/W) 0.3 APT22M100JCU2 Low Voltage Output Characteristics Low Voltage Output Characteristics 35 50 TJ=125°C 40 ID, Drain Current (A) TJ=25°C 30 TJ=125°C 20 10 0 30 VGS=6, 7, 8 & 9V 25 20 15 5V 10 4.5V 5 0 0 5 10 15 20 0 5 Normalized RDSon vs. Temperature 35 VGS=10V ID=16A 20 25 30 2 1.5 1 0.5 0 VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 30 25 TJ=125°C 20 15 TJ=25°C 10 5 0 25 50 75 100 125 150 0 1 TJ, Junction Temperature (°C) 2 3 4 5 6 7 VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage Gate Charge vs Gate to Source 100000 12 VGS=10V ID=16A 10 VDS=200V VDS=500V C, Capacitance (pF) 8 6 VDS=800V 4 2 0 Ciss 10000 1000 Coss 100 Crss 10 1 0 40 80 120 160 200 240 280 Gate Charge (nC) 0 50 100 150 200 September, 2009 VGS, Gate to Source Voltage 15 Transfert Characteristics 3 2.5 10 VDS, Drain to Source Voltage (V) ID, Drain Current (A) RDSon, Drain to Source ON resistance VDS, Drain to Source Voltage (V) VDS, Drain to Source Voltage (V) www.microsemi.com 4-5 APT22M100JCU2 – Rev 0 ID, Drain Current (A) VGS=10V APT22M100JCU2 Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 1.8 0.9 1.6 1.4 0.7 1.2 1 0.5 0.8 0.3 0.6 0.4 0.1 0.2 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (Seconds) Reverse Characteristics Forward Characteristics 20 100 IR Reverse Current (µA) IF Forward Current (A) TJ=25°C 16 TJ=75°C 12 TJ=125°C 8 4 TJ=175°C 75 50 TJ=75°C TJ=125°C 25 TJ=175°C TJ=25°C 0 0 0.5 1 1.5 2 2.5 3 3.5 0 400 600 800 1000 1200 1400 1600 VR Reverse Voltage (V) VF Forward Voltage (V) Capacitance vs.Reverse Voltage C, Capacitance (pF) 700 600 500 400 300 200 100 0 1000 September, 2009 10 100 VR Reverse Voltage ISOTOP® is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APT22M100JCU2 – Rev 0 1