Fairchild J111 N-channel switch Datasheet

G
S
G
S
TO-92
SOT-23
D
D
Mark: 6P / 6R / 6S
NOTE: Source & Drain
are interchangeable
N-Channel Switch
This device is designed for low level analog switching, sample
and hold circuits and chopper stabilized amplifiers. Sourced
from Process 51.
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Parameter
Value
Units
35
V
VDG
Drain-Gate Voltage
VGS
Gate-Source Voltage
- 35
V
IGF
Forward Gate Current
50
mA
TJ ,Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD
TA = 25°C unless otherwise noted
Characteristic
RθJC
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
Max
Units
J111-113
625
5.0
125
*MMBFJ111-113
350
2.8
357
556
mW
mW/°C
°C/W
°C/W
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
 2001 Fairchild Semiconductor Corporation
J111/112/113/MMBFJ111/112/113, Rev A
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113
MMBFJ111
MMBFJ112
MMBFJ113
J111
J112
J113
5
(continued)
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Max
Units
- 1.0
nA
- 10
- 5.0
- 3.0
1.0
V
V
V
nA
30
50
100
mA
mA
mA
Ω
Ω
Ω
VDS = 0, VGS = 0, f = 1.0 MHz
28
pF
OFF CHARACTERISTICS
V(BR)GSS
Gate-Source Breakdown Voltage
IGSS
Gate Reverse Current
IG = - 1.0 µA, VDS = 0
VGS = - 15 V, VDS = 0
VGS(off)
Gate-Source Cutoff Voltage
VDS = 5.0 V, ID = 1.0 µA
ID(off)
Drain Cutoff Leakage Current
VDS = 5.0 V, VGS = - 10 V
- 35
111
112
113
- 3.0
- 1.0
- 0.5
111
112
113
111
112
113
20
5.0
2.0
V
ON CHARACTERISTICS
IDSS
Zero-Gate Voltage Drain Current*
VDS = 15 V, IGS = 0
rDS(on)
Drain-Source On Resistance
VDS ≤ 0.1 V, VGS = 0
SMALL-SIGNAL CHARACTERISTICS
Cdg(on)
Csg(on)
Cdg(off)
Drain Gate & Source Gate On
Capacitance
Drain-Gate Off Capacitance
VDS = 0, VGS = - 10 V, f = 1.0 MHz
5.0
pF
Csg(off)
Source-Gate Off Capacitance
VDS = 0, VGS = - 10 V, f = 1.0 MHz
5.0
pF
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 3.0%
Typical Characteristics
Common Drain-Source
- TRANSCONDUCTANCE (mmhos)
- 0.4 V
6
- 0.6 V
4
- 0.8 V
- 1.0 V
2
- 1.2 V
fs
I
- 1.4 V
0
0
0.4
0.8
1.2
1.6
VDS - DRAIN-SOURCE VOLTAGE (V)
2
g
- DRAIN CURRENT (mA)
- 0.2 V
8
100
r DS
50
50
g
20
20
fs
I DSS , g fs @ V DS = 15V,
V GS = 0 PULSED
r DS @ 1.0 mA, V GS = 0
V GS(off) @ V DS = 15V,
I D = 1.0 nA
10
I DSS
_5
0.5
_
1
V GS (OFF)
_
_
2
5
- GATE CUTOFF VOLTAGE (V)
10
_
5
10
- DRAIN "ON" RESISTANCE (Ω)
T A = 25°C
TYP V GS(off) = - 2.0 V
V GS = 0 V
100
DS
D
Parameter Interactions
r
10
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113
N-Channel Switch
(continued)
Typical Characteristics
(continued)
Transfer Characteristics
Transfer Characteristics
16
- DRAIN CURRENT (mA)
VGS(off) = - 3.0 V
- 55°C
25°C
125°C
30
VGS(off) = - 2.0 V
125°C
25°C
- 55°C
20
V DS = 15 V
10
VGS(off) = - 1.6 V
25°C
125°C
12
8
VGS(off) = - 1.1 V
125°C
25°C
- 55°C
4
I
I
0
0
0
-1
-2
-3
VGS - GATE-SOURCE VOLTAGE (V)
0
VGS(off) = - 3.0 V
- 55°C
25°C
125°C
20
VGS(off) = - 2.0 V
- 55°C
25°C
125°C
10
fs
V DS = 15 V
0
0
-1
-2
VGS - GATE-SOURCE VOLTAGE (V)
-3
r DS - NORMALIZED RESISTANCE ( Ω )
On Resistance vs Drain Current
100
125°C
V GS(off)
TYP = - 2.0V
50
25°C
20
125°C
V GS(off)
- 55°C
TYP = - 7.0V
25°C
r DS @ V GS = 0
- 55°C
10
1
2
ID
5
10
20
- DRAIN CURRENT (mA)
50
-0.5
-1
-1.5
VGS - GATE-SOURCE VOLTAGE (V)
Transfer Characteristics
- TRANSCONDUCTANCE (mmhos)
30
g
g fs - TRANSCONDUCTANCE (mmhos)
Transfer Characteristics
r DS - DRAIN "ON" RESISTANCE (Ω)
V DS = 15 V
- 55°C
D
D
- DRAIN CURRENT (mA)
40
100
30
V GS(off) = - 1.6 V
- 55°C
25°C
125°C
20
VGS(off) = - 1.1 V
10
- 55°C
25°C
125°C
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113
N-Channel Switch
V DS = 15 V
0
0
-0.5
-1
-1.5
VGS - GATE-SOURCE VOLTAGE (V)
Normalized Drain Resistance
vs Bias Voltage
100
50
20
10
V GS(off) @ 5.0V, 10 µA
r DS
r DS =
V GS
1 -________
V GS(off)
5
2
1
0
0.2
0.4
0.6
0.8
1
VGS /VGS(off) - NORMALIZED GATE-SOURCE VOLTAGE (V)
5
(continued)
(continued)
TA = 25°C
V DG = 15V
f = 1.0 kHz
10
V GS(off) = - 1.4V
V GS(off) = - 3.0V
1
0.1
1
I D - DRAIN CURRENT (mA)
Output Conductance
vs Drain Current
100
os
100
- OUTPUT CONDUCTANCE ( µ mhos)
Transconductance
vs Drain Current
10
T A = 25°C
10
√
e n - NOISE VOLTAGE (nV / Hz)
C is (C rs ) - CAPACITANCE (pF)
C is (V DS = 20)
C rs (V DS = 0)
-4
-8
-12
-16
V GS - GATE-SOURCE VOLTAGE (V)
V GS(off) = - 2.0V
V GS(off) = - 0.85V
0.1
0.01
= 0.21 @ f ≥ 1.0 kHz
10
5
I D = 1.0 mA
I D = 10 mA
1
0.01
-20
P D - POWER DISSIPATION (mW)
e n - NOISE VOLTAGE (nV / √ Hz)
f = 10 Hz
f = 100 Hz
f = 1.0 kHz
10
f = 10 kHz
f = 100 kHz
0.1
1
- DRAIN CURRENT (mA)
1
10
f - FREQUENCY (kHz)
100
Power Dissipation vs
Ambient Temperature
V DG = 15V
D
10
V DG = 15V
Noise Voltage vs Current
I
0.1
I D - DRAIN CURRENT (mA)
50 BW = 6.0 Hz @ f = 10 Hz, 100 Hz
100
1
0.01
10V
15V
20V
Noise Voltage vs Frequency
C is (V DS = 0)
0
5.0V
10V
15V
20V
1
100
f = 0.1 - 1.0 MHz
1
5.0V
10V
15V
20V
V GS(off) = - 5.0V
Capacitance vs Voltage
100
10
V DG = 5.0V
f = 1.0 kHz
g
g fs - TRANSCONDUCTANCE (mmhos)
Typical Characteristics
10
700
600
TO-92
500
SOT-23
400
300
200
100
0
0
25
50
75
100
TEMPERATURE ( o C)
125
150
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113
N-Channel Switch
(continued)
Typical Characteristics
(continued)
25
V DD = 3.0V
t r (ON)
20
15
t r APPROX. I D INDEPENDENT
VGS(off) = 3.0V
T A = 25°C
I D = 6.6 mA
10
2.5 mA
- 6.0V
t d (ON)
V GS = -12V
5
0
0
V GS(off)
-2
-4
-6
-8
-10
- GATE-SOURCE CUTOFF VOLTAGE (V)
Switching Turn-Off Time
vs Drain Current
t d(OFF) ,t OFF - TURN-OFF TIME (ns)
t r(ON) ,t d(ON)- TURN-ON TIME (ns)
Switching Turn-On Time
vs Gate-Source Voltage
100
T A = 25°C
VGS(off)= -2.2V
80
V GS = -12V
- 4.0V
t (off)
60 - 7.5V
t d(off) DEVICE
V GS(off) INDEPENDENT
40
20
0
V DD = 3.0V
t d(off)
0
2
4
6
8
I D - DRAIN CURRENT (mA)
10
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113
N-Channel Switch
5
TO-92 Tape and Reel Data
TO-92 Packaging
Configuration: Figure 1.0
TAPE and REEL OPTION
FSCINT Label sample
See Fig 2.0 for various
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FAIRCHILD SEMICONDUCTOR CORPORATION
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TO-92 Tape and Reel Data, continued
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Machine Option “E” (J)
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FIRST WIRE OFF IS EMITTER
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ORDER STYLE
D75Z (P)
FIRST WIRE OFF IS COLLECTOR (ON PKG. 92)
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FLAT OF TRANSISTOR IS ON TOP
September 1999, Rev. B
TO-92 Tape and Reel Data, continued
TO-92 Tape and Reel Taping
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Hd
P
Pd
b
Ha
W1
d
L
H1 HO
L1
S
WO
t
W2
W
t1
P1 F1
DO
P2
PO
User Direction of Feed
TO-92 Reel
Configuration: Figure 5.0
ITEM DESCRIPTION
SYMBOL
DIMENSION
Base of Package to Lead Bend
b
0.098 (max)
Component Height
Ha
0.928 (+/- 0.025)
Lead Clinch Height
HO
0.630 (+/- 0.020)
Component Base Height
H1
0.748 (+/- 0.020)
Component Alignment ( side/side )
Pd
0.040 (max)
Component Alignment ( front/back )
Hd
0.031 (max)
Component Pitch
P
0.500 (+/- 0.020)
Feed Hole Pitch
PO
0.500 (+/- 0.008)
Hole Center to First Lead
P1
0.150 (+0.009, -0.010)
Hole Center to Component Center
P2
0.247 (+/- 0.007)
Lead Spread
F1/F2
0.104 (+/- 0 .010)
Lead Thickness
d
0.018 (+0.002, -0.003)
Cut Lead Length
L
0.429 (max)
Taped Lead Length
L1
0.209 (+0.051, -0.052)
Taped Lead Thickness
t
0.032 (+/- 0.006)
Carrier Tape Thickness
t1
0.021 (+/- 0.006)
Carrier Tape Width
W
0.708 (+0.020, -0.019)
Hold - down Tape Width
WO
0.236 (+/- 0.012)
Hold - down Tape position
W1
0.035 (max)
Feed Hole Position
W2
0.360 (+/- 0.025)
Sprocket Hole Diameter
DO
0.157 (+0.008, -0.007)
Lead Spring Out
S
0.004 (max)
Note : All dimensions are in inches.
ELECT ROSTATIC
SEN SITIVE D EVICES
D4
D1
D2
F63TNR Label
ITEM DESCRIPTION
SYSMBOL
MINIMUM
MAXIMUM
Reel Diameter
D1
13.975
14.025
Arbor Hole Diameter (Standard)
D2
1.160
1.200
D2
0.650
0.700
Customized Label
(Small Hole)
W1
Core Diameter
D3
3.100
3.300
Hub Recess Inner Diameter
D4
2.700
3.100
Hub Recess Depth
W1
0.370
0.570
Flange to Flange Inner Width
W2
1.630
Hub to Hub Center Width
W3
1.690
2.090
W3
W2
Note: All dimensions are inches
D3
July 1999, Rev. A
TO-92 Package Dimensions
TO-92 (FS PKG Code 92, 94, 96)
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Scale 1:1 on letter size paper
Dimensions shown below are in:
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SOT-23 Tape and Reel Data
SOT-23 Packaging
Configuration: Figure 1.0
Customized Label
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adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
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dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 10,000 units per 13"
or 330cm diameter reel. This and some other options are
described in the Packaging Information table.
Antistatic Cover Tape
Human Readable
Label
These full reels are individually labeled and placed inside
a standard intermediate made of recyclable corrugated
brown paper with a Fairchil d logo printing. One pizza box
contains eight reels maximum. And these intermediate
boxes are placed inside a labeled shipping box which
comes in different sizes depending on the number of parts
shipped.
Embossed
Carrier Tape
3P
3P
3P
3P
SOT-23 Packaging Information
Packaging Option
Packaging type
Qty per Reel/Tube/Bag
Standard
(no flow code)
TNR
3,000
D87Z
7" Dia
13"
187x107x183
343x343x64
Max qty per Box
24,000
30,000
Weight per unit (gm)
0.0082
0.0082
Weight per Reel (kg)
0.1175
0.4006
Reel Size
Box Dimension (mm)
SOT-23 Unit Orientation
TNR
10,000
343mm x 342mm x 64mm
Intermediate box for L87Z Option
Human Readable Label
Note/Comments
Human Readable Label sample
H uman readable
Label
187mm x 107mm x 183mm
Intermediate Box for Standard Option
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Cover Tape
Components
Trailer Tape
300mm minimum or
75 empt y poc kets
©2000 Fairchild Semiconductor International
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500mm minimum or
125 empty pockets
September 1999, Rev. C
SOT-23 Tape and Reel Data, continued
SOT-23 Embossed Carrier Tape
Configuration: Figure 3.0
P0
P2
D1
D0
T
E1
W
F
E2
Wc
B0
Tc
A0
P1
K0
User Direction of Feed
Dimensions are in millimeter
Pkg type
A0
B0
SOT-23
(8mm)
3.15
+/-0.10
2.77
+/-0.10
W
8.0
+/-0.3
D0
D1
E1
E2
1.55
+/-0.05
1.125
+/-0.125
1.75
+/-0.10
F
6.25
min
3.50
+/-0.05
P1
P0
4.0
+/-0.1
4.0
+/-0.1
K0
T
1.30
+/-0.10
0.228
+/-0.013
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
Wc
0.06
+/-0.02
0.5mm
maximum
20 deg maximum
Typical
component
cavity
center line
B0
5.2
+/-0.3
Tc
0.5mm
maximum
20 deg maximum component rotation
Typical
component
center line
Sketch A (Side or Front Sectional View)
A0
Component Rotation
Sketch C (Top View)
Component lateral movement
Sketch B (Top View)
SOT-23 Reel Configuration: Figure 4.0
Component Rotation
W1 Measured at Hub
Dim A
Max
Dim A
max
See detail AA
Dim N
7" Diameter Option
B Min
Dim C
See detail AA
W3
13" Diameter Option
Dim D
min
W2 max Measured at Hub
DETAIL AA
Dimensions are in inches and millimeters
Tape Size
Reel
Option
Dim A
Dim B
Dim C
Dim D
Dim N
Dim W1
Dim W2
Dim W3 (LSL-USL)
8mm
7" Dia
7.00
177.8
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
2.165
55
0.331 +0.059/-0.000
8.4 +1.5/0
0.567
14.4
0.311 – 0.429
7.9 – 10.9
8mm
13" Dia
13.00
330
0.059
1.5
512 +0.020/-0.008
13 +0.5/-0.2
0.795
20.2
4.00
100
0.331 +0.059/-0.000
8.4 +1.5/0
0.567
14.4
0.311 – 0.429
7.9 – 10.9
September 1999, Rev. C
SOT-23 Package Dimensions
SOT-23 (FS PKG Code 49)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.0082
©2000 Fairchild Semiconductor International
September 1998, Rev. A1
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This datasheet contains the design specifications for
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any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H1