IXYS IXFN100N50Q3 Hiperfet power mosfet q3-class Datasheet

Advance Technical Information
IXFN100N50Q3
HiperFETTM
Power MOSFET
Q3-Class
VDSS
ID25
RDS(on)
trr
=
=
≤
≤
500V
82A
Ω
49mΩ
250ns
N-Channel Enhancement Mode
Fast Intrinsic Rectifier
miniBLOC
E153432
S
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
500
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
500
V
VGSS
Continuous
±30
V
VGSM
Transient
±40
V
ID25
TC = 25°C
82
A
IDM
TC = 25°C, Pulse Width Limited by TJM
300
A
IA
TC = 25°C
100
A
EAS
TC = 25°C
5
J
dv/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
50
V/ns
PD
TC = 25°C
960
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
2500
3000
V~
V~
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
30
g
TJ
TJM
Tstg
VISOL
50/60 Hz, RMS, t = 1minute
IISOL ≤ 1mA,
t = 1s
Md
Mounting Torque for Base Plate
Terminal Connection Torque
Weight
G
S
D
G = Gate
S = Source
D = Drain
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
(Gate Return) Terminal.
Features
z
z
z
z
z
z
International Standard Package
Low Intrinsic Gate Resistance
miniBLOC with Aluminum Nitride
Isolation
Low Package Inductance
Fast Intrinsic Rectifier
Low RDS(on) and QG
Advantages
z
z
z
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = 3mA
500
VGS(th)
VDS = VGS, ID = 8mA
3.5
IGSS
VGS = ±30V, VDS = 0V
±200 nA
IDSS
VDS = VDSS, VGS = 0V
50 μA
2.5 mA
RDS(on)
VGS = 10V, ID = 50A, Note 1
TJ = 125°C
© 2011 IXYS CORPORATION, All Rights Reserved
Applications
V
6.5
High Power Density
Easy to Mount
Space Savings
V
z
z
z
z
z
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
Temperature and Lighting Controls
49 mΩ
DS100308(03/11)
IXFN100N50Q3
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
40
VDS = 20V, ID = 50A, Note 1
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
RGi
Gate Input Resistance
td(on)
Resistive Switching Times
tr
td(off)
tf
Qgs
65
S
13.8
nF
1690
pF
177
pF
0.12
Ω
40
ns
20
ns
50
ns
15
ns
255
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 50A
RG = 0.5Ω (External)
Qg(on)
VGS = 10V, VDS = 0.5 • VDSS, ID = 50A
Qgd
SOT-227B (IXFN) Outline
110
nC
115
nC
(M4 screws (4x) supplied)
0.13 °C/W
RthJC
RthCS
0.05
°C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
IS
VGS = 0V
100
A
ISM
Repetitive, Pulse Width Limited by TJM
400
A
VSD
IF = IS, VGS = 0V, Note 1
1.5
V
trr
QRM
IRM
Note
IF = 50A, -di/dt = 200A/μs
3.5
30.0
VR = 100V, VGS = 0V
250 ns
μC
A
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFN100N50Q3
Fig. 1. Output Characteristics @ T J = 25ºC
Fig. 2. Extended Output Characteristics @ T J = 25ºC
100
VGS = 10V
9V
90
VGS = 10V
200
80
160
9V
ID - Amperes
ID - Amperes
70
60
8V
50
40
120
8V
80
30
20
7V
40
7V
10
6V
6V
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
4.5
5
10
15
20
25
30
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 50A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ T J = 125ºC
100
3.2
VGS = 10V
90
VGS = 10V
2.8
80
R DS(on) - Normalized
8V
ID - Amperes
70
60
50
7V
40
30
2.4
I D = 100A
2.0
I D = 50A
1.6
1.2
20
6V
0.8
10
5V
0
0.4
0
1
2
3
4
5
6
7
8
9
10
11
-50
0
25
50
75
100
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 50A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
125
150
125
150
90
3.0
VGS = 10V
2.8
80
TJ = 125ºC
2.6
70
2.4
60
2.2
ID - Amperes
R DS(on) - Normalized
-25
VDS - Volts
2.0
1.8
1.6
50
40
30
1.4
20
1.2
TJ = 25ºC
10
1.0
0
0.8
0
20
40
60
80
100
120
140
ID - Amperes
© 2011 IXYS CORPORATION, All Rights Reserved
160
180
200
220
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
IXFN100N50Q3
Fig. 7. Input Admittance
Fig. 8. Transconductance
110
140
TJ = - 40ºC
100
120
90
g f s - Siemens
ID - Amperes
25ºC
80
100
80
TJ = 125ºC
25ºC
60
- 40ºC
40
70
125ºC
60
50
40
30
20
20
10
0
0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
0
9.0
20
40
VGS - Volts
60
80
100
120
140
ID - Amperes
Fig. 10. Gate Charge
Fig. 9. Forward Voltage Drop of Intrinsic Diode
16
300
VDS = 250V
14
I D = 50A
250
I G = 10mA
12
VGS - Volts
IS - Amperes
200
150
10
8
6
100
TJ = 125ºC
4
TJ = 25ºC
50
2
0
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
0
50
VSD - Volts
150
200
250
300
350
QG - NanoCoulombs
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
1000
100000
f = 1 MHz
RDS(on) Limit
250µs
Ciss
100
10000
ID - Amperes
Capacitance - PicoFarads
100
Coss
10
1000
1
1ms
TJ = 150ºC
TC = 25ºC
Single Pulse
Crss
100
0.1
0
5
10
15
20
25
30
35
40
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10
100
VDS - Volts
1,000
IXFN100N50Q3
Fig. 13. Maximum Transient Thermal Impedance
1
Z(th)JC - ºC / W
0.1
0.01
0.001
0.0001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2011 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_100N50Q3(Q9)02-24-11
Similar pages