AP4511GH-HF Halogen-Free Product Advanced Power Electronics Corp. N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement N-CH BVDSS D1/D2 RDS(ON) 30mΩ ID P-CH BVDSS RDS(ON) TO-252-4L ID 15A -35V 48mΩ -12A ▼ Good Thermal Performance ▼ Fast Switching Performance ▼ RoHS Compliant S1 G1 S2 G2 Description 35V Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. D1 D2 G2 G1 S1 S2 Absolute Maximum Ratings Symbol Parameter Rating N-channel Units P-channel VDS Drain-Source Voltage 35 -35 V VGS Gate-Source Voltage +20 +20 V ID@TC=25℃ Continuous Drain Current 15 -12 A ID@TC=100℃ Continuous Drain Current 9 -7 A 50 -50 A 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation 10.4 W Linear Derating Factor 0.083 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case 3 Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice Value Units 12 ℃/W 110 ℃/W 1 201105315 AP4511GH-HF o N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions VGS=0V, ID=250uA Min. Typ. Max. Units 35 - - V BVDSS Drain-Source Breakdown Voltage ∆BVDSS/∆Tj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.03 - V/℃ RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V, ID=8A - - 30 mΩ VGS=4.5V, ID=6A - - 40 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=8A - 13 - S IDSS Drain-Source Leakage Current VDS=35V, VGS=0V - - 1 uA Drain-Source Leakage Current (T j=125 C) VDS=28V, VGS=0V - - 250 uA Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA ID=8A - 11 18 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=28V - 3 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 6 - nC 2 td(on) Turn-on Delay Time VDS=18V - 12 - ns tr Rise Time ID=1A - 7 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 22 - ns tf Fall Time RD=18Ω - 6 - ns Ciss Input Capacitance VGS=0V - 830 1330 pF Coss Output Capacitance VDS=25V - 150 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 110 - pF Rg Gate Resistance f=1.0MHz - 1.1 1.7 Ω Min. Typ. IS=8A, VGS=0V - - 1.2 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=8A, VGS=0V - 18 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 12 - nC 2 AP4511GH-HF P-CH Electrical Characteristics@T j=25oC(unless otherwise specified) Symbol Parameter Test Conditions BVDSS Drain-Source Breakdown Voltage ∆BVDSS/∆Tj Breakdown Voltage Temperature Coefficient RDS(ON) Min. Typ. -35 - - V Reference to 25℃,ID=-1mA - -0.03 - V/℃ VGS=-10V, ID=-6A - - 48 mΩ VGS=-4.5V, ID=-4A - - 70 mΩ VGS=0V, ID=-250uA 2 Static Drain-Source On-Resistance Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V gfs Forward Transconductance VDS=-10V, ID=-6A - 10 - S IDSS Drain-Source Leakage Current VDS=-35V, VGS=0V - - -1 uA Drain-Source Leakage Current (Tj=125 C) VDS=-28V, VGS=0V - - -250 uA Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA ID=-6A - 10 19 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-28V - 2 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 6 - nC VDS=-18V - 10 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-1A - 6 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=-10V - 26 - ns tf Fall Time RD=18Ω - 7 - ns Ciss Input Capacitance VGS=0V - 690 1100 pF Coss Output Capacitance VDS=-25V - 165 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 130 - pF Rg Gate Resistance f=1.0MHz - 5 7.5 Ω Min. Typ. IS=-6A, VGS=0V - - -1.2 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=-6A, VGS=0V - 20 - ns Qrr Reverse Recovery Charge dI/dt=-100A/µs - 12 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.N-CH , P-CH are same . THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 3 AP4511GH-HF N-Channel 50 50 T C = 25 o C 40 ID , Drain Current (A) ID , Drain Current (A) 40 30 4.5V 20 V G =3.0V 10 30 5.0V 20 4.5V V G =3.0V 10 0 0 0 1 2 3 4 5 0 V DS , Drain-to-Source Voltage (V) 1 2 3 4 5 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.6 45 ID=8A V G =10V ID=6A 40 1.4 T C =25 o C Normalized RDS(ON) RDS(ON) (mΩ ) 10V 7.0V T C = 150 o C 10V 7.0V 5.0V 35 30 25 1.2 1.0 0.8 20 0.6 2 4 6 8 10 -50 0 50 100 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.4 Normalized VGS(th) (V) 6 IS(A) 4 o o T j =150 C T j =25 C 2 0 1.1 0.8 0.5 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 4 AP4511GH-HF N-Channel f=1.0MHz 1000 12 8 C (pF) VGS , Gate to Source Voltage (V) C iss ID=8A V DS = 28V 10 6 C oss C rss 100 4 2 10 0 0 5 10 15 20 1 25 5 9 Q G , Total Gate Charge (nC) 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 100us ID (A) 10 1ms 1 o T C =25 C Single Pulse 10ms 100ms DC Normalized Thermal Response (Rthjc) 1 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t T 0.01 Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 0.1 0.1 1 10 100 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 40 VG V DS =5V ID , Drain Current (A) 30 o T j =25 C QG T j =150 o C 4.5V 20 QGS QGD 10 Charge Q 0 0 2 4 6 8 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 5 AP4511GH-HF P-Channel 50 50 40 -ID , Drain Current (A) -ID , Drain Current (A) 40 -10V -7.0V o T C = 150 C -10V -7.0V o T C = 25 C -5.0V 30 -4.5V 20 -5.0V 30 -4.5V 20 V G = - 3.0V 10 V G = - 3.0V 10 0 0 0 1 2 3 4 5 0 Fig 1. Typical Output Characteristics 2 3 4 5 Fig 2. Typical Output Characteristics 1.6 90 I D = -6 A V G = - 10V ID=-4A 1.4 Normalized RDS(ON) T C =25 o C RDS(ON) (mΩ) 1 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) 70 50 1.2 1.0 0.8 30 0.6 2 4 6 8 10 -50 0 50 100 150 o -V GS ,Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.6 6 Normalized -VGS(th) (V) 5 -IS(A) 4 T j =150 o C T j =25 o C 3 2 1.2 0.8 1 0 0.4 0 0.2 0.4 0.6 0.8 1 -V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 6 AP4511GH-HF P-Channel f=1.0MHz 1000 I D = -6 A V DS = - 28V 10 C iss 8 C (pF) -VGS , Gate to Source Voltage (V) 12 6 4 C oss 2 C rss 0 100 0 5 10 15 20 25 1 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 Normalized Thermal Response (Rthjc) Duty factor=0.5 100us -ID (A) 10 1ms 1 10ms 100ms DC o T C =25 C Single Pulse 0.1 0.2 0.1 0.1 0.05 PDM 0.02 t T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 30 VG -ID , Drain Current (A) V DS =-5V T j =25 o C 20 QG T j =150 o C -4.5V QGS QGD 10 Charge Q 0 0 2 4 6 8 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 7