UNISONIC TECHNOLOGIES CO., LTD MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13003-E designed for use in high–volatge, high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching regulator’s,inverters, DC-DC converter, Motor control, Solenoid/Relay drivers and deflection circuits. FEATURES *Collector-Emitter Sustaining Voltage: VCEO (sus)=300V. *Collector-Emitter Saturation Voltage: VCE(sat)=1.0V(Max.) @IC=1.0A, IB =0.25A *Switch Time- tf =0.7μs(Max.) @Ic=1.0A. ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13003L-E-x-T6S-K MJE13003G-E-x-T6S-K MJE13003L-E-x-T92-B MJE13003G-E-x-T92-B MJE13003L-E-x-T92-K MJE13003G-E-x-T92-K MJE13003L-E-x-T92-A-B MJE13003G-E-x-T92-A-B MJE13003L-E-x-T92-A-K MJE13003G-E-x-T92-A-K Package TO-126S TO-92 TO-92 TO-92 TO-92 Pin Assignment 1 2 3 B C E B C E B C E E C B E C B Packing Bulk Tape Box Bulk Tape Box Bulk MARKING INFORMATION PACKAGE MARKING TO-126S TO-92 www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 8 QW-R223-009.D MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS PARAMETER Collector-Emitter Voltage Collector-Emitter Voltage Emitter Base Voltage Continuous Collector Current Peak (1) Continuous Base Current Peak (1) Continuous Emitter Current Peak (1) TO-92 TO-126S TO-92 Derate above 25°C TO-126S TO-92 TC=25°C TO-126S TO-92 Derate above 25°C TO-126S SYMBOL VCEO(SUS) VCEV VEBO IC ICM IB IBM IE IEM TA=25°C Total Power Dissipation Junction Temperature Storage Temperature PD TJ TSTG RATINGS 400 700 9 1.5 3 0.75 1.5 2.25 4.5 1.1 1.4 8 11.2 1.5 20 12 160 150 -65 to +150 UNIT V V V A A A W W/°C W W/°C °C °C THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT TO-92 113.6 Junction to Ambient θJA °C/W TO-126S 89 TO-92 80 Junction to Case θJC °C/W TO-126S 6.25 Maximum Load Temperature for Soldering Purposes: TL 275 °C 1/8” from Case for 5 Seconds Note: 1. Pulse Test : Pulse Width=5ms,Duty Cycle≤10% 2. Designer 's Data for “Worst Case” Conditions – The Designer 's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves – representing boundaries on device characteristics – are given to facilitate “Worst case” design. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 8 QW-R223-009.D MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS (1) Collector-Emitter Sustaining Voltage SYMBOL VCEO(SUS) Collector Cutoff Current ICEV TEST CONDITIONS MIN TYP MAX UNIT IC=10 mA , IB=0 VCEV=Rated Value, VBE(off)=1.5 V VCEV=Rated Value, VBE(off)=1.5V,Tc=100°C 400 1 V mA 5 mA SECOND BREAKDOWN hFE1 hFE2 hFE3 DC Current Gain Collector-Emitter Saturation Voltage VCE(SAT) Base-Emitter Saturation Voltage V BE(SAT) DYNAMIC CHARACTERISTICS Current-Gain-Bandwidth Product fT Output Capacitance Cob SWITCHING CHARACTERISTICS (TABLE 1) Delay Time td Rise Time tr Storage Time ts Fall Time tf INDUCTIVE LOAD, CLAMPED (TABLE 1, FIGURE 7) Storage Time tsv Crossover Time tc Fall Time tfi IC=0.5 A, VCE=2V IC=1 A, VCE=2V IC=200mA, VCE=10V IC=0.5A, IB=0.1A IC=1A, IB=0.25A IC=1.5A, IB=0.5A IC=0.5A, IB=0.1A IC=1A, IB=0.25 A 8 3 9 IC=100mA, VCE=10 V, f=1MHz VCB=10V, IE=0, f=0.1MHz 4 40 25 40 0.5 2.5 3 1 1.2 10 21 V V MHz pF VCC=125V, IC=1A, IB1=IB2=0.2A, tP=25μs, Duty Cycle≤1% 0.05 0.5 2 0.4 0.1 1 4 0.7 μs μs μs μs IC=1A,Vclamp=300V, IB1=0.2A,VBE(off)=5V,TC=100°C 1.7 4 0.29 0.75 0.15 μs μs μs CLASSIFICATION OF hFE1 RANK RANGE A 8 ~ 16 B 15 ~ 21 C 20 ~ 26 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw D 25 ~ 31 E 30 ~ 36 F 35 ~ 40 3 of 8 QW-R223-009.D MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR APPLICATION INFORMATION Table 1.Test Conditions for Dynamic Performance Reverse Bias Safe Operating Area and Inductive Switching +5V VCC 33 1N4933 MJE210 L 0.001µF 33 Test Circuits pw 5V DUTY CYCLE? 10% tr,tf? 10ns 68 0.02µF NOTE PW and Vcc Adjusted for Desired Ic RB Adjusted for Desired IB1 +125V TUT RB IB 5.1K D1 VCE 1K T.U.T. SCOPE *SELECTED FOR? 1KV 51 -4.0V 2N2905 270 47 1/2W 100 MJE200 -VBE(off) VCC=125V RC=125Ω D1=1N5820 or Equiv. RB=47Ω Coil Data : GAP for 30 mH/2 A VCC=20V Ferroxcube core #6656 Lcoil=50mH Vclamp=300V Full Bobbin ( ~ 200 Turns) #20 Output Waveforms Circuit Values Rc Vclamp IC RB 1K +5V 1N4933 MR826* 1N4933 2N2222 1K Resistive Switching Test Waveforms OUTPUT WAVEFORMS IC IC(pk) t1 VCE +10.3V tf CLAMPED t1 Adjusted to Obtain Ic t tf VCE or Vclamp TIME t t2 t1= Lcoil(Icpk) Vcc t2= Lcoil(Icpk) Vclamp 25μS 0 Test Equipment Scope-Tektronics 475 or Equivalent -8.5V tr,tf<10ns Duty Cycly=1.0% RB and Rc adjusted for desired IB and Ic Table 2. Typical Inductive Switching Performance IC (AMP) TC (°C) TSV (μs) TRV (μs) TFI (μs) TTI (μs) TC (μs) 0.5 25 100 1.3 1.6 0.23 0.26 0.30 0.30 0.35 0.40 0.30 0.36 1 25 100 1.5 1.7 0.10 0.13 0.14 0.26 0.05 0.06 0.16 0.29 1.5 25 100 1.8 3 0.07 0.08 0.10 0.22 0.05 0.08 0.16 0.28 Note: All Data Recorded in the inductive Switching Circuit Table 1 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Fig 1. Inductive Switching Measurements 4 of 8 QW-R223-009.D MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR SWITCHING TIMES NOTE In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage waveforms since they are in phase, However, for inductive loads which are common to SWITCHMODE power supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements must be made on each wave form to determine the total switching time, For this reason, the following new terms have been defined. tSV=Voltage Storage Time, 90% IB1 to 10% Vclamp tRV=Voltage Rise Time, 10-90% Vclamp tFI=Current Fall Time, 90-10% IC tTI=Current Tail, 10-2% IC tC=Crossover Time, 10% Vclamp to 10% IC An enlarged portion of the inductive switching waveforms is shown in Figure 1 to aid in the visual identity of these terms. For the designer, there is minimal switching loss during storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from AN-222: PSWT=1/2 VccIc (tc)f In general, trv + tfi≒tc. However, at lower test currents this relationship may not be valid. As is common with most switching transistor, resistive switching is specified at 25°C and has become a benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications which make this a “SWITCHMODE” transistor are the inductive switching speeds (tc and tsv) which are guaranteed at 100°C. RESISTIVE SWITCHING PERFORMANCE Collector Current, IC (A) Collector Current, IC (A) 10 7 2 1 0.7 0.5 Vcc=125V Ic/IB=5 TJ=25°C tR Vcc=125V Ic/IB=5 TJ=25°C tS 5 3 0.3 Time, t (°C) Time, t (°C) 2 0.2 td @ VBE(off)=5V 0.1 0.07 1 0.7 0.5 tR 0.3 0.05 0.2 0.03 0.02 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 0 20 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 2 Fig 3. Turn-Off Time r(t),EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Fig 2. Turn-On Time 0.1 0.02 0.03 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 8 QW-R223-009.D MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR SAFE OPERATING AREA INFORMATION FORWARD BIAS There are two limitations on the power handling ability of a transistor: average junction temperature and second break-down. Safe operating area curves indicate Ic – VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on Tc=25°C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when Tc≧25°C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 5 may be found at any case tem-perature by using the appropriate curve on Figure 7. TJ(pk) may be calculated from the data in Figure 5. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. REVERSE BIAS For inductive loads, high voltage and high current must be sustained simultaneously during turn–off, in most cases, with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe Operating Area and represents the voltage–current conditions during re-verse biased turn–off. This rating is verified under clamped conditions so that the device is never subjected to an ava-lanche mode. Figure 6 gives RBSOA characteristics. VCEV,COLLECTOR-EMITTER LAMP VOLTAGE(VOLTS) VCE,COLLECTOR-EMITTERVOLTAGE (VOLTS) 1.6 5 10µS 2 100µS 1 1.0ms dc 0.5 TC=25°C 0.2 THERMAL LIMIT (SINGLE PULSE) BONDING WIRE LIMIT SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO 0.1 0.05 0.02 0.01 1.2 5.0ms V,VOLTAGE (VOLTS) Ic,COLLECTOR CURRENT (AMP) 10 TJ =100°C IB1=1A 0.8 5V 0.4 3V 0 5 10 20 50 100 200 300 500 VBE(OFF)=9V 0 100 200 1.5V 300 400 500 600 800 700 Fig 6. Reverse Bias Safe Operating Area Fig 5. Active Region Safe Operating Area IC, CASE TEMPERATURE (°C) POWER DERATING FACTOR 1 SECOND BREAKDOWN DERATING 0.8 0.6 THERMAL DERATING 0.4 0.2 0 20 40 60 80 100 120 140 160 Fig 7. Forward Bias Power Derating UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 8 QW-R223-009.D MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS IB, BASE CURRENT (AMP) VCE,COLLECTOR -EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (AMP) 80 60 TJ=150°C hFE,DC CURRENT GAIN 40 25°C 30 20 -55°C 10 8 VCE=2V - - - - - -VCE=5V 6 4 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 2 TJ=25°C 1.6 0.8 0.4 0 0.02 2 1 DC Current Gain IC, COLLECTOR CURRENT (AMP) V,VOLTAGE (VOLTS) 0.35 VBE(sat)@IC/IB=3 - - - - - - VBE(on)@VCE=2V 1.2 25°C 0.8 25°C 0.6 150°C 0.4 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.25 4 25°C 0.1 150°C 0.2 0.3 0.5 0.7 1 VR,REVERSE VOLTAGE (VOLTS) 300 200 125°C 75°C 50°C Cib 100 70 50 30 20 0 10 -1 -0.4 REVERSE -0.2 Cob 10 25°C 10 2 500 V,VOLTAGE (VOLTS) IC,COLLECTOR CURRENT (? A) 10 2 TJ=-55°C 0.15 VBE,BASE-EMITTER VOLTAGE (VOLTS) 100°C 1 1 Collector-Emitter Saturation Region TJ=150°C 2 IC/IB=3 0 0.02 0.03 0.05 0.07 0.1 2 0.5 0.7 1 3 10 0.5 IC, COLLECTOR CURRENT (AMP) 0.05 VCE=250V 10 0.2 0.2 Base-Emitter Voltage 10 0.05 0.1 0.3 TJ=-55°C 1 0.05 0.01 0.02 Collector Saturation Region V,VOLTAGE (VOLTS) 1.4 1A 1.5A Ic=0.1A 0.3A 0.5A 1.2 FORWARD 0 +0.2 Collector Cutoff Region +0.4 +0. 6 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 5 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000 Capacitance 7 of 8 QW-R223-009.D MJE13003-E NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R223-009.D