AOT20S60/AOB20S60/AOTF20S60 600V 20A α MOS TM General Description Product Summary The AOT20S60& AOB20S60 & AOTF20S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max 700V IDM 80A RDS(ON),max 0.199Ω Qg,typ 20nC Eoss @ 400V 4.9µJ Power Transistor 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT20S60L & AOB20S60L & AOTF20S60L Top View TO-220 TO-263 2 D D PAK TO-220F(3kVAC; 1s) D S G G AOT20S60 D D G S S AOB20S60 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT20S60/AOB20S60 VDS Drain-Source Voltage AOTF20S60 600 Gate-Source Voltage ±30 Continuous Drain Current VGS TC=25°C TC=100°C ID S G AOTF20S60 20 14 AOTF20S60L Units V V 20* 20* 14* 14* A Pulsed Drain Current C IDM 80 Avalanche Current C IAR 3.4 A Repetitive avalanche energy C EAR 23 mJ Single pulsed avalanche energy G TC=25°C Power Dissipation B Derate above 25oC MOSFET dv/dt ruggedness H Peak diode recovery dv/dt Junction and Storage Temperature Range 50 37.8 W 2.1 0.4 0.3 W/ oC 100 20 -55 to 150 TJ, TSTG TL Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Symbol RθJA RθCS Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. mJ 266 dv/dt Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J Rev 5: Sep 2012 188 EAS PD V/ns °C 300 °C AOT20S60/AOB20S60 AOTF20S60 AOTF20S60L 65 65 65 °C/W 0.5 0.47 -2.5 -3.3 °C/W °C/W www.aosmd.com Units Page 1 of 7 AOT20S60/AOB20S60/AOTF20S60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units ID=250µA, VGS=0V, TJ=25°C 600 - - ID=250µA, VGS=0V, TJ=150°C 650 700 - V µA STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V - - 1 VDS=480V, TJ=150°C - 10 - IGSS Gate-Body leakage current VDS=0V, VGS=±30V - - ±100 VGS(th) Gate Threshold Voltage VDS=5V,ID=250µA 2.8 3.4 4.1 nΑ V RDS(ON) Static Drain-Source On-Resistance VSD Diode Forward Voltage IS ISM VGS=10V, ID=10A, TJ=25°C - 0.18 0.199 Ω VGS=10V, ID=10A, TJ=150°C - 0.48 0.53 Ω IS=10A,VGS=0V, TJ=25°C - 0.84 - V Maximum Body-Diode Continuous Current - - 20 A Maximum Body-Diode Pulsed CurrentC - - 80 A - 1038 - pF - 68 - pF - 56.6 - pF - 176.5 - pF VGS=0V, VDS=100V, f=1MHz - 2.1 - pF VGS=0V, VDS=0V, f=1MHz - 9.3 - Ω - 19.8 - nC - 4.6 - nC DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Co(er) Effective output capacitance, energy related H Crss Effective output capacitance, time related I Reverse Transfer Capacitance Rg Gate resistance Co(tr) VGS=0V, VDS=100V, f=1MHz VGS=0V, VDS=0 to 480V, f=1MHz SWITCHING PARAMETERS Total Gate Charge Qg VGS=10V, VDS=480V, ID=10A Qgs Gate Source Charge Qgd Gate Drain Charge - 7.6 - nC tD(on) Turn-On DelayTime - 27.5 - ns tr Turn-On Rise Time - 32 - ns tD(off) Turn-Off DelayTime - 87.5 - ns tf trr Turn-Off Fall Time - 30 - ns VGS=10V, VDS=400V, ID=10A, RG=25Ω Body Diode Reverse Recovery Time Peak Reverse Recovery Current IF=10A,dI/dt=100A/µs,VDS=400V - 350 - ns Irm IF=10A,dI/dt=100A/µs,VDS=400V - 27 - Qrr Body Diode Reverse Recovery Charge IF=10A,dI/dt=100A/µs,VDS=400V - 5.7 - A µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. L=60mH, IAS=2.5A, VDD=150V, Starting TJ=25°C H. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS. I. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS. J. Wavesoldering only allowed at leads. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 5: Sep 2012 www.aosmd.com Page 2 of 7 AOT20S60/AOB20S60/AOTF20S60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 40 10V 10V 35 25 7V 7V 30 20 6V 6V ID (A) ID (A) 25 20 5.5V 15 10 VGS=4.5V 15 5.5V 10 5V 5 5V 5 VGS=4.5V 0 0 0 5 10 15 0 20 5 10 15 20 VDS (Volts) Figure 2: On-Region Characteristics@125°C VDS (Volts) Figure 1: On-Region Characteristics@25°C 100 0.5 VDS=20V 0.4 10 -55°C RDS(ON) (Ω ) ID(A) 125°C 1 VGS=10V 0.3 0.2 25°C 0.1 0.1 0.0 0.01 2 4 6 8 0 10 VGS(Volts) Figure 3: Transfer Characteristics 20 30 40 50 ID (A) Figure 4: On-Resistance vs. Drain Current and Gate Voltage 1.2 3 2.5 VGS=10V ID=10A BVDSS (Normalized) Normalized On-Resistance 10 2 1.5 1 1.1 1 0.9 0.5 0 -100 0.8 -100 -50 0 50 100 150 200 Temperature (°C) Figure 5: On-Resistance vs. Junction Temperature Rev 5: Sep 2012 www.aosmd.com -50 0 50 100 150 200 o TJ ( C) Figure 6: Break Down vs. Junction Temperature Page 3 of 7 AOT20S60/AOB20S60/AOTF20S60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 1.0E+02 1.0E+01 125°C 12 VDS=480V ID=10A 25°C 1.0E-01 9 VGS (Volts) IS (A) 1.0E+00 1.0E-02 1.0E-03 6 1.0E-04 3 1.0E-05 0.0 0.2 0.4 0.6 0.8 0 1.0 0 VSD (Volts) Figure 7: Body-Diode Characteristics (Note E) 5 10 15 20 25 30 Qg (nC) Figure 8: Gate-Charge Characteristics 10000 10 8 1000 Eoss(uJ) Capacitance (pF) Ciss Coss 100 Eoss 6 4 Crss 10 2 0 1 0 100 200 300 400 500 VDS (Volts) Figure 9: Capacitance Characteristics 0 600 100 100 200 300 400 VDS (Volts) Figure 10: Coss stored Energy 500 100 10µs RDS(ON) limited 10µs 100µs 1ms 1 DC 10ms 10 ID (Amps) 10 ID (Amps) 600 RDS(ON) limited 100µs 1ms 1 10ms 0.1s 1s 10s DC 0.1 0.1 TJ(Max)=150°C TC=25°C TJ(Max)=150°C TC=25°C 0.01 0.01 1 10 100 1000 VDS (Volts) 1 10 100 1000 VDS (Volts) Figure 11: Maximum Forward Biased Safe Operating Area for AOT(B)20S60 (Note F) Rev 5: Sep 2012 0.1 www.aosmd.com Figure 12: Maximum Forward Biased Safe Operating Area for AOTF20S60(Note F) Page 4 of 7 AOT20S60/AOB20S60/AOTF20S60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 200 10µs 160 RDS(ON) limited 100µs 1ms 1 10ms 0.1s 1s DC 0.1 TJ(Max)=150°C TC=25°C 10s EAS(mJ) ID (Amps) 10 120 80 40 0 0.01 0.1 1 10 100 VDS (Volts) Figure 13: Maximum Forward Biased Safe Operating Area for AOTF20S60L(Note F) 1000 25 50 75 100 125 TCASE (°C) Figure 14: Avalanche energy 150 175 Current rating ID(A) 25 20 15 10 5 0 0 25 75 100 125 TCASE (°C) Figure 15: Current De-rating (Note B) Rev 5: Sep 2012 50 150 www.aosmd.com Page 5 of 7 AOT20S60/AOB20S60/AOTF20S60 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.47°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Ton 0.01 T Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance for AOT(B)20S60 (Note F) Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=2.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 17: Normalized Maximum Transient Thermal Impedance for AOTF20S60 (Note F) Zθ JC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=3.3°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 18: Normalized Maximum Transient Thermal Impedance for AOTF20S60L (Note F) Rev 5: Sep 2012 www.aosmd.com Page 6 of 7 AOT20S60/AOB20S60/AOTF20S60 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev 5: Sep 2012 L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com Page 7 of 7