DONGGUAN NANJING ELECTRONICS LTD., TO-92 Plastic-Encapsulate Transistors A92 TO-92 TRANSISTOR (PNP) FEATURES High voltage 1.EMITTER 2.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter 3.COLLECTOR Value Units VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -200 mA ICM Collector Current -Pulsed -500 mA PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ RӨJA Thermal Resistance, Junction to Ambient 200 ℃/mW RӨJC Thermal Resistance, Junction to Case 83.3 ℃/mW ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100uA, IE=0 -300 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -300 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA, IC=0 -5 V Collector cut-off current ICBO VCB= -200 V, IE=0 Emitter cut-off current IEBO VEB= -5 V, IC=0 hFE(1) VCE= -10 V, IC=- 1 mA 60 hFE(2) VCE= -10V, IC = -10 mA 80 hFE(3) VCE= -10 V, IC= -80 mA 60 Collector-emitter saturation voltage VCE(sat) IC= -20 mA, IB= -2 mA -0.2 V Base-emitter saturation voltage VBE(sat) IC= -20 mA, IB= -2 mA -0.9 V fT VCE= -20 V, IC= -10 mA f = 30MHz DC current gain Transition frequency -0.25 μA -0.1 μA 250 50 MHz CLASSIFICATION OF hFE(2) Rank Range A B1 B2 C 80-100 100-150 150-200 200-250