IKP10N60T p TrenchStop® Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5μs Designed for : - Variable Speed Drive for washing machines, air conditioners and induction cooking - Uninterrupted Power Supply TrenchStop® and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Very soft, fast recovery anti-parallel EmCon HE diode Qualified according to JEDEC1 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type IKP10N60T G E PG-TO-220-3-1 VCE IC VCE(sat),Tj=25°C Tj,max Marking Code Package 600V 10A 1.5V 175°C K10T60 PG-TO-220-3-1 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE DC collector current, limited by Tjmax TC = 25°C TC = 100°C IC Pulsed collector current, tp limited by Tjmax ICpuls 30 Turn off safe operating area VCE ≤ 600V, Tj ≤ 175°C - 30 Diode forward current, limited by Tjmax TC = 25°C TC = 100°C IF Diode pulsed current, tp limited by Tjmax IFpuls 30 Gate-emitter voltage VGE ±20 V tSC 5 μs Power dissipation TC = 25°C Ptot 110 W Operating junction temperature Tj -40...+175 °C Storage temperature Tstg -55...+175 Short circuit withstand time 2) Value 600 Unit V A 20 10 20 10 VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C Soldering temperature, wavesoldering, 1.6 mm (0.063 in.) from case for 10s 1 2) 260 J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 1 Rev. 2.3 Sep. 07 IKP10N60T p TrenchStop® Series Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC 1.35 K/W RthJCD 1.9 RthJA 62 Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Value min. typ. max. 600 - - T j = 25°C - 1.5 2.05 T j = 175 °C - 1.8 - T j = 25°C - 1.6 2.0 T j = 175 °C - 1.6 - 4.1 4.6 5.7 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0 V , I C =0.2mA Collector-emitter saturation voltage VCE(sat) Diode forward voltage Gate-emitter threshold voltage Zero gate voltage collector current VF V V G E = 15 V, I C =10A VGE=0V, IF=10A VGE(th) I C =0.3mA,V C E =V G E ICES V C E = 60 0 V , VGE=0V µA T j = 25°C - - 40 T j = 175 °C - - 1000 Gate-emitter leakage current IGES V C E = 0 V ,V G E =20V - - 100 nA Transconductance gfs V C E =20V, I C =10A - 6 - S Integrated gate resistor RGint none Ω Dynamic Characteristic Input capacitance Ciss V C E =25V, - 551 - Output capacitance Coss VGE=0V, - 40 - Reverse transfer capacitance Crss f=1MHz - 17 - Gate charge QGate V C C = 48 0 V, I C =10A - 62 - nC - 7 - nH - 100 - A pF V G E =15V Internal emitter inductance LE measured 5mm (0.197 in.) from case Short circuit collector current1) 1) IC(SC) V G E =15V,t S C ≤5 μs V C C = 400 V, T j = 2 5°C Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 2 Rev. 2.3 Sep. 07 IKP10N60T p TrenchStop® Series Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol Conditions Value min. typ. max. - 12 - - 8 - - 215 - - 38 - - 0.16 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy ns - 0.27 - Ets T j = 25°C , V C C = 40 0 V, I C =10A, V G E = 0 /1 5 V, R G = 2 3Ω , L σ 2 ) =6 0nH , C σ 2 ) =40pF Energy losses include “tail” and diode reverse recovery. - 0.43 - Diode reverse recovery time trr T j = 25°C , - 115 - ns Diode reverse recovery charge Qrr V R = 40 0 V , I F =10A, - 0.38 - µC Diode peak reverse recovery current Irrm d i F /d t= 880A/μs - 10 - A Diode peak rate of fall of reverse recovery current during t b dirr/dt - 680 - A/μs mJ Anti-Parallel Diode Characteristic Switching Characteristic, Inductive Load, at Tj=175 °C Parameter Symbol Conditions Value min. typ. max. - 10 - - 11 - - 233 - - 63 - - 0.26 - Unit IGBT Characteristic - 0.35 - Ets T j = 175 °C , V C C = 40 0 V, I C =10A, V G E = 0 /1 5 V, R G = 2 3Ω L σ 1 ) =6 0nH , C σ 1 ) =40pF Energy losses include “tail” and diode reverse recovery. - 0.61 - Diode reverse recovery time trr T j = 175 °C - 200 - ns Diode reverse recovery charge Qrr V R = 40 0 V , I F =10A, - 0.92 - µC Diode peak reverse recovery current Irrm d i F /d t= 880A/μs - 13 - A Diode peak rate of fall of reverse recovery current during t b dirr/dt - 390 - A/μs Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy ns mJ Anti-Parallel Diode Characteristic 2) 1) Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E. Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E. Power Semiconductors 3 Rev. 2.3 Sep. 07 IKP10N60T p TrenchStop® Series tp=1µs T C =80°C 20A 15A T C =110°C 10A Ic 5A 0A 10H z 5µs 10A 25A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 30A 20µs 100µs 1A 500µs 10ms Ic DC 100H z 1kH z 10kH z 0,1A 1V 100kH z f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 175°C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 23Ω) 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤175°C; VGE=15V) 120W 30A IC, COLLECTOR CURRENT 80W 60W 40W Ptot, POWER DISSIPATION 100W 20A 10A 20W 0W 25°C 50°C 75°C 0A 25°C 100°C 125°C 150°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 175°C) Power Semiconductors 4 75°C 125°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≥ 15V, Tj ≤ 175°C) Rev. 2.3 Sep. 07 IKP10N60T p TrenchStop® Series 30A 30A 25A V G E =20V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 25A 15V 20A 12V 10V 15A 8V 6V 10A 5A 12V 10V 15A 8V 6V 10A 0A 0V 1V 2V 3V 4V 0V 25A 20A 15A 10A T J = 1 7 5 °C 5A 2 5 °C 0V 2V 4V 6V 8V 10V 2V 3V 4V 5V 3,0V IC =20A 2,5V IC =10A 2,0V 1,5V IC =5A 1,0V 0,5V 0,0V -50°C 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) Power Semiconductors 1V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 175°C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) IC, COLLECTOR CURRENT 15V 20A 5A 0A 0A V G E =20V 5 Rev. 2.3 Sep. 07 IKP10N60T p TrenchStop® Series t d(off) t d(off) 100ns t, SWITCHING TIMES t, SWITCHING TIMES 100ns tf t d(on) 10ns tf t d(on) 10ns tr tr 1ns 1ns 0A 5A 10A 15A 20A 10Ω IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, RG = 23Ω, Dynamic test circuit in Figure E) 20Ω 30Ω 40Ω 50Ω RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175°C, VCE= 400V, VGE = 0/15V, IC = 10A, Dynamic test circuit in Figure E) t d(off) t, SWITCHING TIMES 100ns tf t d(on) 10ns tr VGE(th), GATE-EMITT TRSHOLD VOLTAGE 7V 6V 4V m ax. typ. 5V m in. 3V 2V 1V 1ns 25°C 50°C 75°C 0V -50°C 100°C 125°C 150°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 10A, RG=23Ω, Dynamic test circuit in Figure E) Power Semiconductors 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.3mA) 6 Rev. 2.3 Sep. 07 IKP10N60T p TrenchStop® Series *) E on and E ts include losses 1,0 m J 0,8 m J E off 0,6 m J 0,4 m J E on * 0,2 m J 0,0 m J 0A 5A 1 0A 0,8 mJ 0,6 mJ 0,4 mJ 10Ω 30Ω 40Ω 50Ω *) E on and E ts include losses due to diode recovery E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 20Ω RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, IC = 10A, Dynamic test circuit in Figure E) due to diode recovery E ts * 0,4mJ 0,3mJ E off 0,2mJ 0,1mJ E on* 0,2 mJ *) E on and E ts include losses 0,5mJ E off 0,0 mJ 1 5A IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, RG = 23Ω, Dynamic test circuit in Figure E) 0,6mJ E ts* due to diode recovery E ts * du e to dio de rec ov e ry E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES *) E on a n d E ts in c lu d e lo ss e s E on* 0,8m J 0,6m J E ts * 0,4m J E off 0,2m J E on * 0,0mJ 50°C 100°C 0,0m J 300V 150°C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 10A, RG = 23Ω, Dynamic test circuit in Figure E) Power Semiconductors 350V 400V 450V 500V 550V VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175°C, VGE = 0/15V, IC = 10A, RG = 23Ω, Dynamic test circuit in Figure E) 7 Rev. 2.3 Sep. 07 IKP10N60T p TrenchStop® Series 1nF VGE, GATE-EMITTER VOLTAGE C iss 120V 10V c, CAPACITANCE 15V 480V 100pF C oss 5V C rss 0V 0nC 20nC 40nC 10pF 60nC QGE, GATE CHARGE Figure 17. Typical gate charge (IC=10 A) 0V 10V 20V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) SHORT CIRCUIT WITHSTAND TIME 150A 125A 100A 75A 50A tSC, IC(sc), short circuit COLLECTOR CURRENT 12µs 25A 0A 12V 14V 16V 8µs 6µs 4µs 2µs 0µs 10V 18V VGE, GATE-EMITTETR VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (VCE ≤ 400V, Tj ≤ 150°C) Power Semiconductors 10µs 11V 12V 13V 14V VGE, GATE-EMITETR VOLTAGE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25°C, TJmax<150°C) 8 Rev. 2.3 Sep. 07 IKP10N60T p TrenchStop® Series ZthJC, TRANSIENT THERMAL RESISTANCE ZthJC, TRANSIENT THERMAL RESISTANCE 0 10 K/W D=0.5 0.1 R1 0.05 -1 10 K/W τ, (s) -2 6.53*10 -3 8.33*10 -4 7.37*10 -5 7.63*10 R,(K/W) 0.2911 0.4092 0.5008 0.1529 0.2 0.02 0.01 R2 C1=τ1/R1 C2=τ2/R2 single pulse -2 10 K/W 10µs 0.2 0.1 -1 10 K/W 0.05 R,(K/W) 0.3169 0.4734 0.6662 0.4398 R1 τ, (s) -2 4.629*10 -3 7.07*10 -3 1.068*10 -4 1.253*10 6 R2 0.02 0.01 C1=τ1/R1 C2=τ2/R2 single pulse -2 100µs 1ms 10ms 100ms 10µs 100µs 1ms 10ms 100ms tP, PULSE WIDTH Figure 22. Diode transient thermal impedance as a function of pulse width (D=tP/T) 0,8µC 250ns TJ=175°C 200ns 150ns 100ns TJ=25°C 50ns Qrr, REVERSE RECOVERY CHARGE 300ns trr, REVERSE RECOVERY TIME D=0.5 10 K/W 1µs tP, PULSE WIDTH Figure 21. IGBT transient thermal resistance (D = tp / T) 0ns 200A/µs 0 10 K/W T J=175°C 0,7µC 0,6µC 0,5µC 0,4µC T J=25°C 0,3µC 0,2µC 0,1µC 0,0µC 400A/µs 600A/µs 200A/µs 800A/µs diF/dt, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as a function of diode current slope (VR=400V, IF=10A, Dynamic test circuit in Figure E) Power Semiconductors 9 400A/µs 600A/µs 800A/µs diF/dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (VR = 400V, IF = 10A, Dynamic test circuit in Figure E) Rev. 2.3 Sep. 07 TrenchStop® Series T J =175°C 2A 10A T J =25°C 8A 6A 4A 0A 200A/µs 400A/µs 600A/µs -600A/µs -500A/µs -400A/µs T J=175°C -300A/µs -200A/µs -100A/µs 0A/µs 400A/µs 800A/µs diF/dt, DIODE CURRENT SLOPE Figure 25. Typical reverse recovery current as a function of diode current slope (VR = 400V, IF = 10A, Dynamic test circuit in Figure E) T J=25°C -700A/µs dirr/dt, DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT REVERSE RECOVERY CURRENT 12A Irr, 14A IKP10N60T p 600A/µs 800A/µs diF/dt, DIODE CURRENT SLOPE Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=400V, IF=10A, Dynamic test circuit in Figure E) 30A 2,0V T J =25°C I F =20A VF, FORWARD VOLTAGE IF, FORWARD CURRENT 175°C 20A 10A 0A 0V 1V VF, FORWARD VOLTAGE Figure 27. Typical diode forward current as a function of forward voltage Power Semiconductors 5A 1,0V 0,5V 0,0V -50°C 2V 10 10A 1,5V 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 28. Typical diode forward voltage as a function of junction temperature Rev. 2.3 Sep. 07 TrenchStop® Series IKP10N60T p PG-TO-220-3-1 Power Semiconductors 11 Rev. 2.3 Sep. 07 IKP10N60T p TrenchStop® Series i,v tr r =tS +tF diF /dt Qr r =QS +QF tr r IF tS QS Ir r m tF QF 10% Ir r m dir r /dt 90% Ir r m t VR Figure C. Definition of diodes switching characteristics τ1 τ2 r1 r2 τn rn Tj (t) p(t) r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Lσ =60nH a nd Stray capacity C σ =40pF. Figure B. Definition of switching losses Power Semiconductors 12 Rev. 2.3 Sep. 07 TrenchStop® Series IKP10N60T p Edition 2006-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 1/25/08. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 13 Rev. 2.3 Sep. 07