TriQuint AH3-G High dynamic range gain block Datasheet

AH3
High Dynamic Range Gain Block
Applications
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3G / 4G Mobile Infrastructure
CDMA, WCDMA, LTE
IF Applications
SOT-89 Package
Product Features
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Functional Block Diagram
50 – 870 MHz
+41 dBm OIP3
3 dB Noise Figure
13 dB Gain
+20 dBm P1dB
Internally matched
Single +5 V Supply
MTTF > 100 Years
Lead-free/Green/RoHS-compliant SOT-89 Package
GND
4
General Description
1
2
3
RF IN
GND
RF OUT
Pin Configuration
The AH3 is a high dynamic range amplifier in a low-cost
surface-mount package. The combination of low noise
figure and high output IP3 at the same bias point makes it
ideal for receiver and transmitter applications. The device
combines dependable performance with superb quality to
maintain MTTF values exceeding 100 years at mounting
temperatures of +85 °C. The AH3 is available in the
environmentally-friendly lead-free/green/RoHS-compliant
SOT-89 package.
Pin #
1
2
3
4
The broadband amplifier uses a high reliability GaAs
MESFET technology and is targeted for applications
where high linearity is required. In addition, the AH3 is
internally matched for 50 ohms.
Symbol
RF Input
GND
RF Output
GND Paddle
Not Recommended for
New Designs
Recommended Replacement
Part: TQP3M9028
Ordering Information
Part No.
AH3-G
Description
High Dynamic Range Amplifier
Standard T/R size = 1000 pieces on a 7” reel.
Data Sheet: Rev D 06/05/2012
© 2012 TriQuint Semiconductor, Inc.
- 1 of 7 -
Disclaimer: Subject to change without notic
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AH3
High Dynamic Range Gain Block
Specifications
Absolute Maximum Ratings
Parameter
Storage Temperature
RF Input Power, CW, 50Ω, T = 25ºC
Supply Voltage, Vdd
Thermal Resistance (jnc. to case) θjc
Recommended Operating Conditions
Rating
Parameter
-55 to +125 oC
+10 dBm
+6 V
59 oC/W
Vdd
TJ (for >106 hours MTTF)
Operating Temp. Range
Min
+3
Typ
+5
-40
Max Units
+5.25
160
+85
V
C
o
C
o
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Operation of this device outside the parameter ranges given
above may cause permanent damage.
Electrical Specifications
Test conditions unless otherwise noted: Vdd = +5 V, TLEAD = 25 °C, 800 MHz.
Parameter
Operational Frequency Range
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Conditions
Min
50
12
See Note 1.
Noise Figure
Supply Voltage, Vdd
Supply Current, Idd
+37
120
Typical
800
12.9
10
20
+20
+41
2.9
+5
150
Max
870
14
180
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dB
V
mA
Notes:
1. 3OIP measured with two tones at an output power of +5 dBm/tone separated by 10 MHz. The suppression on the largest IM3 product is
used to calculate the 3OIP using a 2:1 rule.
Data Sheet: Rev D 06/05/2012
© 2012 TriQuint Semiconductor, Inc.
- 2 of 7 -
Disclaimer: Subject to change without notic
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AH3
High Dynamic Range Gain Block
Device Characterization Data
S-Parameter Data
Test conditions unless otherwise noted: Vdd = +5 V, TLEAD = 25 °C, calibrated to device leads
Freq (MHz)
S11 (dB)
S11 (ang)
S21 (dB)
S21 (ang)
S12 (dB)
S12 (angle)
S22 (dB)
S22 (ang)
50
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
-11.93
-13.21
-13.51
-13.48
-13.55
-14.05
-14.12
-13.53
-13.60
-13.32
-13.11
-12.65
-12.43
-12.10
-11.79
-11.54
-11.28
-10.97
-10.69
-10.53
-33.34
-28.09
-28.85
-32.18
-36.10
-44.73
-48.60
-55.70
-61.16
-65.93
-70.97
-75.78
-80.45
-84.62
-88.75
-93.43
-96.17
-100.66
-104.85
-107.99
14.15
13.95
13.85
13.83
13.81
13.78
13.75
13.70
13.69
13.65
13.60
13.52
13.51
13.46
13.39
13.33
13.26
13.21
13.08
13.04
169.58
170.57
169.10
167.34
164.90
162.57
160.01
157.51
155.04
152.52
150.15
147.48
145.06
142.56
140.08
137.61
135.38
132.61
129.83
127.70
-19.95
-19.98
-19.86
-19.85
-19.87
-19.86
-19.91
-19.92
-19.95
-19.90
-19.85
-19.91
-19.89
-19.87
-19.82
-19.92
-19.84
-20.09
-20.09
-19.92
7.77
2.69
0.25
-1.46
-3.41
-4.62
-5.48
-7.31
-7.85
-10.12
-10.20
-11.07
-12.83
-12.67
-14.15
-14.94
-15.94
-16.96
-19.21
-19.33
-18.60
-20.54
-21.16
-21.23
-20.91
-19.26
-19.07
-19.12
-18.71
-18.67
-18.46
-18.43
-18.29
-18.31
-18.29
-18.18
-18.26
-18.20
-18.35
-17.83
-126.62
-149.57
-160.72
-167.36
-170.48
-177.22
-175.89
-178.33
-179.04
178.55
178.78
177.91
177.33
175.94
176.28
174.92
173.97
174.37
175.02
174.09
Gain vs. Frequency
14
-5
S11, S22 (dB)
12
Gain (dB)
Return Loss
0
16
10
8
6
4
S11
S22
-10
-15
-20
2
0
-25
0
200
400
600
800
1000
Frequency (MHz)
Data Sheet: Rev D 06/05/2012
© 2012 TriQuint Semiconductor, Inc.
0
200
400
600
800
1000
Frequency (MHz)
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AH3
High Dynamic Range Gain Block
Reference Design 50 - 870 MHz (AH3WB-PCB)
Bill of Material
Ref Des
Value
Description
Manufacturer
C1
1000 pF
Cap, Chip, 0603, 5%, 50V, X7R
various
C2
.01 uF
Cap, Chip, 0603, 5%, 50V, X7R
various
L1
12 nH
Ind, Chip, 0603, 5%
various
L2
390 nH
Coil Wire-wound, 1008, 5%
Coilcraft
Q1
High Dynamic Range Block
Part Number
TriQuint
AH3
1008CS-391XJLC
Typical Performance 50-800 MHz (AH3WB-PCB)
Test conditions unless otherwise noted: Vdd = +5 V, TLEAD = 25 °C
Frequency
MHz
Gain
Input Return Loss
Output Return Loss
Output P1dB
OIP3 @ +5 dBm/tone Δf = 10 MHz
Noise Figure
Idd
Vdd
50
dB
dB
dB
dBm
dBm
dB
mA
V
13.2
8.4
18.7
+20
+36
6
Gain vs. Frequency
800
13
16
16
+20
+40
3.5
150
+5
12.5
15
15
+20
+41
3.4
Return Loss vs. Frequency
15
0
-5
S11, S22 (dB)
12
Gain (dB)
450
9
6
S11
S22
-10
-15
-20
-25
3
-30
0
50
200
350
500
650
800
0
950
© 2012 TriQuint Semiconductor, Inc.
400
600
800
1000
Millions
Frequency (MHz)
Data Sheet: Rev D 06/05/2012
200
Frequency (MHz)
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AH3
High Dynamic Range Gain Block
Pin Description
GND
4
1
2
3
RF IN
GND
RF OUT
Pin
Symbol
Description
2, 4
GND
RF/DC Ground. Ensure good solder attach for optimal RF and thermal performance.
3
RF OUT
RF Output. DC supply input.
1
RF IN
RF Input. Internally DC grounded. No DC blocking capacitor required.
Applications Information
PC Board Layout
Circuit Board Material: .062” total thickness with
a .014” FR-4 top RF layer, 4 layers (other layers
added for rigidity), 1 oz copper, 50Ω Microstrip
line details: width = .025”.
The pad pattern shown has been developed and
tested for optimized assembly at TriQuint
Semiconductor. The PCB land pattern has been
developed to accommodate lead and package
tolerances. Since surface mount processes vary
from company to company, careful process
development is recommended.
For further technical information, Refer to http://www.triquint.com/prodserv/more_info/default.aspx?prod_id=AH3
Data Sheet: Rev D 06/05/2012
© 2012 TriQuint Semiconductor, Inc.
- 5 of 7 -
Disclaimer: Subject to change without notic
®
Connecting the Digital World to the Global Network
AH3
High Dynamic Range Gain Block
Mechanical Information
Package Information and Dimensions
Lead-free/Green/RoHS-compliant.
Package pin plating - NiPdAu.
Compatible with lead-free (Tmax=260°C)
and lead (Tmax=245 °C) soldering
processes.
AH3G
XXXX-X
The AH3-G will be marked with an
“AH3G” designator. An alphanumeric lot
code (“XXXX-X”) is also marked below
the part designator on the top surface of
the package
Mounting Configuration
All dimensions in millimeters(inches)
Angles are in degrees
Notes:
1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and
have a final plated thru diameter of .25 mm (.010”).
2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance.
3. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the
heatsink.
4. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink.
5. RF trace width depends upon the PC board material and construction.
6. Use 1 oz. Copper minimum.
Data Sheet: Rev D 06/05/2012
© 2012 TriQuint Semiconductor, Inc.
- 6 of 7 -
Disclaimer: Subject to change without notic
®
Connecting the Digital World to the Global Network
AH3
High Dynamic Range Gain Block
Product Compliance Information
ESD Information
Solderability
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
ESD Rating:
Value:
Test:
Standard:
Class1B
Passes ≥ 500 to < 1000 V.
Human Body Model (HBM)
JEDEC Standard JESD22-A114
ESD Rating:
Value:
Test:
Standard:
Class IV
Passes ≥ 1000 to < 2000 V.
Charged Device Model (CDM)
JEDEC Standard JESD22-C101
This product also has the following attributes:
• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
• SVHC Free
MSL Rating
The part is rated Moisture Sensitivity Level 1 at 260°C per
JEDEC standard J-STD-020.
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information about
TriQuint:
Web: www.triquint.com
Email: [email protected]
Tel:
Fax:
+1.503.615.9000
+1.503.615.8902
For technical questions and application information:
Email: [email protected]
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained
herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint
assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained
herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with
the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest
relevant information before placing orders for TriQuint products. The information contained herein or any use of such
information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property
rights, whether with regard to such information itself or anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining
applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.
Data Sheet: Rev D 06/05/2012
© 2012 TriQuint Semiconductor, Inc.
- 7 of 7 -
Disclaimer: Subject to change without notic
®
Connecting the Digital World to the Global Network
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