Fairchild MCT2M Phototransistor optocoupler Datasheet

MCT2M, MCT2EM, MCT210M, MCT271M
Phototransistor Optocouplers
Features
Description
■ UL recognized (File # E90700, Vol. 2)
The MCT2XXM series optoisolators consist of a gallium
arsenide infrared emitting diode driving a silicon
phototransistor in a 6-pin dual in-line package.
■ IEC60747-5-2 recognized (File # 102497)
– Add option V (e.g., MCT2VM)
Applications
■ Power supply regulators
■ Digital logic inputs
■ Microprocessor inputs
Schematic
Anode 1
Cathode 2
No Connection 3
©2005 Fairchild Semiconductor Corporation
MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3
Package Outlines
6 Base
5 Collector
4 Emitter
www.fairchildsemi.com
MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers
September 2009
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
Value
Units
TOTAL DEVICE
TSTG
Storage Temperature
-40 to +150
°C
TOPR
Operating Temperature
-40 to +100
°C
TSOL
PD
Lead Solder Temperature
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
260 for 10 sec
°C
250
mW
2.94
mW/°C
EMITTER
IF
DC/Average Forward Input Current
60
mA
VR
Reverse Input Voltage
3
V
Forward Current – Peak (300µs, 2% Duty Cycle)
3
A
120
mW
1.41
mW/°C
Collector Current
50
mA
Collector-Emitter Voltage
30
V
IF(pk)
PD
LED Power Dissipation @ TA = 25°C
Derate above 25°C
DETECTOR
IC
VCEO
PD
Detector Power Dissipation @ TA = 25°C
Derate above 25°C
©2005 Fairchild Semiconductor Corporation
MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3
150
mW
1.76
mW/°C
www.fairchildsemi.com
2
MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers
Absolute Maximum Ratings
Individual Component Characteristics
Symbol
Parameter
Test Conditions
Device
Min.
Typ.*
Max.
Units
1.50
V
10
µA
EMITTER
VF
IR
Input Forward Voltage
Reverse Leakage
Current
IF = 20mA
MCT2M
MCT2EM
MCT271M
1.25
TA = 0°C–70°C, IF = 40mA
MCT210M
1.33
VR = 3.0V
MCT2M
MCT2EM
MCT271M
0.001
TA = 0°C–70°C, VR = 6.0V
MCT210M
DETECTOR
BVCEO
Collector-Emitter
Breakdown Voltage
IC = 1.0mA, IF = 0
ALL
TA = 0°C–70°C
MCT210M
30
100
V
120
V
V
BVCBO
Collector-Base
Breakdown Voltage
IC = 10µA, IF = 0
MCT2M
MCT2EM
MCT271M
70
TA = 0°C–70°C
MCT210M
30
BVECO
Emitter-Collector
Breakdown Voltage
IE = 100µA, IF = 0
MCT2M
MCT2EM
MCT271M
7
10
TA = 0°C–70°C
MCT210M
6
10
ICEO
Collector-Emitter Dark
Current
VCE = 10V, IF = 0
ALL
ICBO
Collector-Base Dark
Current
VCB = 10V, IF = 0
ALL
CCE
Capacitance
VCE = 0V, f = 1MHz
ALL
1
50
VCE = 5V, TA = 0°C–70°C
nA
30
µA
20
nA
8
pF
*All typical TA = 25°C
Isolation Characteristics
Symbol
VISO
Parameter
Input-Output Isolation Voltage
RISO
Isolation Resistance
CISO
Isolation Capacitance
Test Conditions
Min
f = 60Hz, t = 1 sec.
7500
VI-O = 500 VDC
1011
Typ*
Max
Units
Vac(pk)
Ω
0.2
2
pF
*All typicals at TA = 25°C
©2005 Fairchild Semiconductor Corporation
MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3
www.fairchildsemi.com
3
MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers
Electrical Characteristics (TA = 25°C unless otherwise specified)
Transfer Characteristics
Symbol
Parameter
Test Conditions
Device
Min.
Typ.*
TA = 0°C–70°C
MCT210M
150
IF = 10mA, VCE = 10V
MCT2M
MCT2EM
20
MCT271M
45
IF = 3.2mA to 32mA,
VCE = 0.4V, TA = 0°C–70°C
MCT210M
50
IC = 2mA, IF = 16mA
MCT2M
MCT2EM
MCT271M
IC = 16mA, IF = 32mA,
TA = 0°C–70°C
MCT210M
IF = 15mA, VCC = 5V,
RL = 2kΩ, RB = Open (Fig. 11)
MCT2M
MCT2EM
1.1
IF = 20mA, VCC = 5 V,
RL = 2kΩ, RB = 100kΩ) (Fig. 11)
MCT2M
MCT2EM
1.3
IF = 15mA, VCC = 5V,
RL = 2kΩ, RB = Open (Fig. 11)
MCT2M
MCT2EM
50
IF = 20mA, VCC = 5V,
RL = 2kΩ, RB = 100kΩ (Fig. 11)
MCT2M
MCT2EM
20
Max.
Unit
DC CHARACTERISTICS
CTR
VCE(SAT)
Output Collector
Current
Collector-Emitter
Saturation Voltage
%
90
0.4
V
AC CHARACTERISTICS
ton
toff
AC Characteristic Saturated
Turn-on Time from 5V to 0.8V
Saturated Turn-off Time from
SAT to 2.0 V
µs
µs
ton
Turn-on Time
IF = 10mA, VCC = 10V,
RL = 100Ω
MCT2M
MCT2EM
2
µs
toff
Turn-off Time
IF = 10mA, VCC = 10V,
RL = 100Ω
MCT2M
MCT2EM
2
µs
tr
Rise Time
IF = 10mA, VCC = 10V,
RL = 100Ω
MCT2M
MCT2EM
2
µs
tf
Fall Time
IF = 10mA, VCC = 10V,
RL = 100Ω
MCT2M
MCT2EM
1.5
µs
ton
Saturated turn-on time
1.0
µs
Saturated turn-off time
(Approximates a typical
TTL interface)
IF = 16mA, RL = 1.9kΩ,
VCC = 5V (Fig. 11)
MCT271M
toff
48
µs
ton
Saturated turn-on time
MCT271M
1.0
µs
toff
Saturated turn-off time
(Approximates a typical
low power TTL interface)
IF = 16mA, RL = 4.7kΩ,
VCC = 5 V (Fig. 20)
98
µs
MCT210M
1.0
µs
11
µs
MCT210M
1.0
µs
50
µs
2
µs
2
µs
tr
Saturated rise time
tf
Saturated fall time
IF = 16mA, RL = 560Ω,
VCC = 5V) (Fig. 11, 12)
TPD (HL)
Saturated propagation
delay – HIGH to LOW
IF = 16mA, RL = 2.7kΩ
(Fig. 11, 12)
TPD (LH)
Saturated propagation
delay – LOW to HIGH
tr
Non-saturated rise time
tf
Non-saturated fall time
ton
Non-saturated turn-on time
toff
Non-saturated turn-off time
IC = 2mA, VCC = 5V,
RL = 100Ω (Fig. 11)
MCT210M
IC = 2mA, VCC = 5V,
RL = 100Ω (Fig. 20)
MCT271M
2
7
µs
2
7
µs
*All typicals at TA = 25°C
©2005 Fairchild Semiconductor Corporation
MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3
www.fairchildsemi.com
4
MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers
Electrical Characteristics (Continued) (TA = 25°C unless otherwise specified)
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol
Parameter
Min.
Typ.
Max.
Unit
Installation Classifications per DIN VDE 0110/1.89
Table 1
For Rated Main Voltage < 150Vrms
I-IV
For Rated Main voltage < 300Vrms
I-IV
Climatic Classification
55/100/21
Pollution Degree (DIN VDE 0110/1.89)
2
CTI
Comparative Tracking Index
175
VPR
Input to Output Test Voltage, Method b,
VIORM x 1.875 = VPR, 100% Production Test
with tm = 1 sec, Partial Discharge < 5pC
1594
Vpeak
Input to Output Test Voltage, Method a,
VIORM x 1.5 = VPR, Type and Sample Test
with tm = 60 sec, Partial Discharge < 5pC
1275
Vpeak
VIORM
Max. Working Insulation Voltage
850
Vpeak
VIOTM
Highest Allowable Over Voltage
6000
Vpeak
External Creepage
7
mm
External Clearance
7
mm
Insulation Thickness
0.5
mm
Insulation Resistance at Ts, VIO = 500V
109
Ω
RIO
©2005 Fairchild Semiconductor Corporation
MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3
www.fairchildsemi.com
5
MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers
Safety and Insulation Ratings
Fig. 2 Normalized CTR vs. Forward Current
1.8
1.6
1.7
1.4
1.6
1.2
NORMALIZED CTR
VF – FORWARD VOLTAGE (V)
Fig. 1 LED Forward Voltage vs. Forward Current
1.5
1.4
TA = 55°C
1.3
TA = 25°C
VCE = 5.0V
TA = 25°C
Normalized to
IF = 10mA
1.0
0.8
0.6
0.4
1.2
TA = 100°C
0.2
1.1
0.0
1.0
1
10
0
100
2
4
6
IF – LED FORWARD CURRENT (mA)
Fig. 3 Normalized CTR vs. Ambient Temperature
10
12
14
16
18
20
Fig. 4 CTR vs. RBE (Unsaturated)
1.4
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
1.0
1.2
IF = 5mA
NORMALIZED CTR
8
IF – FORWARD CURRENT (mA)
1.0
IF = 10mA
0.8
IF = 20mA
0.6
Normalized to
IF = 10mA
TA = 25°C
0.4
0.9
IF = 20mA
0.8
IF = 10mA
0.7
IF = 5mA
0.6
0.5
0.4
0.3
0.2
0.1
VCE = 5.0V
0.0
0.2
-60
-40
-20
0
20
40
60
80
100
10
100
TA – AMBIENT TEMPERATURE (°C)
Fig. 5 CTR vs. RBE (Saturated)
VCE (SAT) – COLLECTOR-EMITTER SATURATION VOLTAGE (V)
Fig. 6 Collector-Emitter Saturation Voltage vs Collector Current
NORMALIZED CTR ( CTRRBE / CTRRBE(OPEN))
1.0
0.9
VCE= 0.3V
0.8
IF = 20mA
0.7
0.6
IF = 10mA
0.5
0.4
IF = 5mA
0.3
0.2
0.1
0.0
10
100
1000
RBE – BASE RESISTANCE (kΩ)
1000
RBE – BASE RESISTANCE (kΩ)
100
TA = 25°C
10
1
IF = 2.5mA
0.1
IF = 20mA
0.01
IF = 5mA
0.001
0.01
IF = 10mA
0.1
1
10
IC – COLLECTOR CURRENT (mA)
©2005 Fairchild Semiconductor Corporation
MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3
www.fairchildsemi.com
6
MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers
Typical Performance Curves
Fig. 7 Switching Speed vs. Load Resistor
Fig. 8 Normalized ton vs. RBE
1000
5.0
NORMALIZED ton – (ton(RBE) / ton(open))
IF = 10mA
VCC = 10V
TA = 25°C
SWITCHING SPEED (µs)
100
Toff
10
Tf
Ton
1
Tr
0.1
4.5
VCC = 10V
IC = 2mA
RL = 100Ω
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.1
1
10
10
100
100
10000
ICEO - COLLECTOR -EMITTER DARK CURRENT (nA)
1.3
NORMALIZED toff – (toff(RBE) / toff(open))
100000
Fig. 10 Dark Current vs. Ambient Temperature
Fig. 9 Normalized toff vs. RBE
1.4
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VCC = 10V
IC = 2mA
RL = 100Ω
0.4
10000
RBE – BASE RESISTANCE (kΩ)
R – LOAD RESISTOR (kΩ)
0.5
1000
0.3
0.2
VCE = 10 V
TA = 25˚C
1000
100
10
1
0.1
0.01
0.1
10
100
1000
10000
0.001
100000
0
RBE – BASE RESISTANCE (kΩ)
©2005 Fairchild Semiconductor Corporation
MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3
20
40
60
80
100
TA – AMBIENT TEMPERATURE (˚C)
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7
MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers
Typical Performance Curves (Continued)
TEST CIRCUIT
WAVE FORMS
VCC = 10V
INPUT PULSE
IC
IF
RL
INPUT
10%
OUTPUT
OUTPUT PULSE
90%
RBE
tr
tf
ton
toff
Adjust IF to produce IC = 2mA
Figure 11. Switching Time Test Circuit and Waveforms
INPUT
TPDHL
TPDLH
5V
OUTPUT
(SATURATED)
1.5 V
1.5 V
SAT
Figure 12. Switching Time Waveforms (MCT210M)
©2005 Fairchild Semiconductor Corporation
MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3
www.fairchildsemi.com
8
MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers
Typical Electro-Optical Characteristics
Through Hole
0.4" Lead Spacing
8.13–8.89
6
4
8.13–8.89
6
4
1
3
6.10–6.60
6.10–6.60
Pin 1
1
3
Pin 1
5.08 (Max.)
0.25–0.36
7.62 (Typ.)
3.28–3.53
5.08 (Max.)
0.25–0.36
3.28–3.53
0.38 (Min.)
2.54–3.81
0.38 (Min.)
2.54–3.81
0.20–0.30
2.54 (Bsc)
(0.86)
15° (Typ.)
2.54 (Bsc)
(0.86)
0.41–0.51
1.02–1.78
0.20–0.30
0.41–0.51
0.76–1.14
10.16–10.80
1.02–1.78
0.76–1.14
Surface Mount
(1.78)
8.13–8.89
6
4
(1.52)
(2.54)
(7.49)
6.10–6.60
8.43–9.90
(10.54)
1
3
(0.76)
Pin 1
Rcommended Pad Layout
0.25–0.36
3.28–3.53
5.08
(Max.)
0.38 (Min.)
0.20–0.30
2.54 (Bsc)
(0.86)
0.16–0.88
(8.13)
0.41–0.51
1.02–1.78
0.76–1.14
Note:
All dimensions in mm.
©2005 Fairchild Semiconductor Corporation
MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3
www.fairchildsemi.com
9
MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers
Package Dimensions
Option
Order Entry Identifier
(Example)
No suffix
MCT2M
S
MCT2SM
SR2
MCT2SR2M
T
MCT2TM
0.4" Lead Spacing
V
MCT2VM
IEC60747-5-2
TV
MCT2TVM
IEC60747-5-2, 0.4" Lead Spacing
SV
MCT2SVM
IEC60747-5-2, Surface Mount
SR2V
MCT2SR2VM
Description
Standard Through Hole Device (50 units per tube)
Surface Mount Lead Bend
Surface Mount; Tape and Reel (1,000 units per reel)
IEC60747-5-2, Surface Mount, Tape and Reel (1,000 units per reel)
Marking Information
1
V
3
MCT2
2
X YY Q
6
5
4
Definitions
1
Fairchild logo
2
Device number
3
VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4
One digit year code, e.g., ‘7’
5
Two digit work week ranging from ‘01’ to ‘53’
6
Assembly package code
*Note – Parts that do not have the ‘V’ option (see definition 3 above) that are marked with
date code ‘325’ or earlier are marked in portrait format.
©2005 Fairchild Semiconductor Corporation
MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3
www.fairchildsemi.com
10
MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers
Ordering Information
12.0 ± 0.1
4.5 ± 0.20
2.0 ± 0.05
Ø1.5 MIN
4.0 ± 0.1
0.30 ± 0.05
1.75 ± 0.10
11.5 ± 1.0
21.0 ± 0.1
9.1 ± 0.20
Ø1.5 ± 0.1/-0
10.1 ± 0.20
0.1 MAX
24.0 ± 0.3
User Direction of Feed
Reflow Profile
300
260°C
280
260
>245°C = 42 Sec
240
220
200
180
°C
Time above
183°C = 90 Sec
160
140
120
1.822°C/Sec Ramp up rate
100
80
60
40
33 Sec
20
0
0
60
120
180
270
360
Time (s)
©2005 Fairchild Semiconductor Corporation
MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3
www.fairchildsemi.com
11
MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers
Carrier Tape Specification
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™*
™*
®
®
Fairchild
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FETBench™
FlashWriter®*
FPS™
F-PFS™
FRFET®
SM
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
®
OPTOPLANAR
®
PDP SPM™
Power-SPM™
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
™
Saving our world, 1mW/W/kW at a time™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®
*
The Power Franchise®
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
µSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I40
©2005 Fairchild Semiconductor Corporation
MCT2M, MCT2EM, MCT210M, MCT271M Rev. 1.0.3
www.fairchildsemi.com
12
MCT2M, MCT2EM, MCT210M, MCT271M — Phototransistor Optocouplers
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