SavantIC Semiconductor Product Specification BD744/A/B/C Silicon PNP Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type BD743/A/B/C ·High current capability ·High power dissipation APPLICATIONS ·For use in power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS BD744 VCBO VCEO VEBO Collector-base voltage Collector-emitter voltage Emitter-base voltage BD744A VALUE -50 Open emitter -70 BD744B -90 BD744C -110 BD744 -45 BD744A UNIT Open base -60 BD744B -80 BD744C -100 Open collector V V -5 V IC Collector current -15 A ICM Collector current-peak -20 A IB Base current -5 A PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 90 Ta=25 2 W SavantIC Semiconductor Product Specification BD744/A/B/C Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS BD744 V(BR)CEO Collector-emitter breakdown voltage MIN TYP. MAX UNIT -45 BD744A -60 IC=-30mA; IB=0 V BD744B -80 BD744C -100 VCEsat-1 Collector-emitter saturation voltage IC=-5 A;IB=-0.5 A -1.0 V VCEsat-2 Collector-emitter saturation voltage IC=-15 A;IB=-5 A -3.0 V VBE -1 Base-emitter on voltage IC=-5A ; VCE=-4V -1.0 V VBE -2 Base-emitter on voltage IC=-15A ; VCE=-4V -3.0 V ICEO Collector cut-off current -0.1 mA VCE=-50V; VBE=0 TC=125 VCE=-70V; VBE=0 TC=125 VCE=-90V; VBE=0 TC=125 VCE=-110V; VBE=0 TC=125 -0.1 -5.0 -0.1 -5.0 -0.1 -5.0 -0.1 -5.0 mA -0.5 mA BD744/A VCE=-30V; IB=0 BD744B/C VCE=-60V; IB=0 BD744 BD744A ICBO Collector cut-off current BD744B BD744C IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-1A ; VCE=-4V 40 hFE-2 DC current gain IC=-5A ; VCE=-4V 20 hFE-3 DC current gain IC=-15A ; VCE=-4V 5 150 Switching times resistive load td Delay time tr Rise time ts Storage time tf Fall time IC=-5 A;IB1=-IB2=-0.5 A VBE(off)=4.2V; RL=6@ tp=20µs 0.02 µs 0.12 µs 0.6 µs 0.3 µs THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case 2 MAX UNIT 1.40 /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 BD744/A/B/C