Micronas HAL526UA-K Hall-effect switch Datasheet

Hardware
Documentation
Data Sheet
®
HAL 525, HAL 526
Hall-Effect Switches
Edition Nov. 30, 2009
DSH000144_003EN
HAL 525, HAL 526
DATA SHEET
Copyright, Warranty, and Limitation of Liability
The information and data contained in this document
are believed to be accurate and reliable. The software
and proprietary information contained therein may be
protected by copyright, patent, trademark and/or other
intellectual property rights of Micronas. All rights not
expressly granted remain reserved by Micronas.
Micronas assumes no liability for errors and gives no
warranty representation or guarantee regarding the
suitability of its products for any particular purpose due
to these specifications.
By this publication, Micronas does not assume responsibility for patent infringements or other rights of third
parties which may result from its use. Commercial conditions, product availability and delivery are exclusively
subject to the respective order confirmation.
Micronas Trademarks
– HAL
Micronas Patents#
Choppered Offset Compensation protected by
Micronas patents no. US5260614, US5406202,
EP0525235 and EP0548391.
Third-Party Trademarks
All other brand and product names or company names
may be trademarks of their respective companies.
Any information and data which may be provided in the
document can and do vary in different applications,
and actual performance may vary over time.
All operating parameters must be validated for each
customer application by customers’ technical experts.
Any new issue of this document invalidates previous
issues. Micronas reserves the right to review this document and to make changes to the document’s content
at any time without obligation to notify any person or
entity of such revision or changes. For further advice
please contact us directly.
Do not use our products in life-supporting systems,
aviation and aerospace applications! Unless explicitly
agreed to otherwise in writing between the parties,
Micronas’ products are not designed, intended or
authorized for use as components in systems intended
for surgical implants into the body, or other applications intended to support or sustain life, or for any
other application in which the failure of the product
could create a situation where personal injury or death
could occur.
No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted
without the express written consent of Micronas.
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Micronas
HAL 525, HAL 526
DATA SHEET
Contents
Page
Section
Title
4
4
4
4
4
5
5
5
1.
1.1.
1.2.
1.3.
1.4.
1.5.
1.6.
1.7.
Introduction
Features
Switch Type
Marking Code
Operating Junction Temperature Range (TJ)
Hall Sensor Package Codes
Solderability and Welding
Pin Connections
6
2.
Functional Description
7
7
12
12
12
12
13
14
15
3.
3.1.
3.2.
3.3.
3.4.
3.4.1.
3.5.
3.6.
3.7.
Specifications
Outline Dimensions
Dimensions of Sensitive Area
Positions of Sensitive Areas
Absolute Maximum Ratings
Storage and Shelf Life
Recommended Operating Conditions
Characteristics
Magnetic Characteristics Overview
19
19
21
4.
4.1.
4.2.
Type Description
<
HAL 525
HAL 526
23
23
23
23
23
5.
5.1.
5.2.
5.3.
5.4.
Application Notes
Ambient Temperature
Extended Operating Conditions
Start-Up Behavior
EMC and ESD
24
6.
Data Sheet History
Micronas
Nov. 30, 2009; DSH000144_003EN
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HAL 525, HAL 526
DATA SHEET
Hall-Effect Switches
1.2. Switch Type
Release Note: Revision bars indicate significant
changes to the previous edition.
Type
1. Introduction
<
The Hall switches HAL 525 and HAL 526 are produced in CMOS technology. These sensors include a
temperature-compensated Hall plate with active offset
compensation, a comparator, and an open-drain output transistor. The comparator compares the actual
magnetic flux through the Hall plate (Hall voltage) with
the fixed reference values (switching points). Accordingly, the output transistor is switched on or off.
The active offset compensation leads to magnetic
parameters which are robust against mechanical
stress effects. In addition, the magnetic characteristics
are constant in the full supply voltage and temperature
range.
This sensor is designed for industrial and automotive
applications and operates with supply voltages from
3.8 V to 24 V in the ambient temperature range from
−40 °C up to 125 °C.
<
The HAL 525 and HAL 526 are available in the
SMD package SOT89B-1 and in the leaded versions
TO92UA-1 and TO92UA-2.
Switching
Behavior
Typical
Temperature
Coefficient
see
Page
<
525
latching
−2000 ppm/K
19
526
latching
−2000 ppm/K
21
Note:
<
: HAL 525 is not available for new designs.
Please use HAL 526 instead.
Latching Sensor:
Latching sensors require a magnetic north and south
pole for correct functioning. The output turns low with
the magnetic south pole on the branded side of the
package and turns high with the magnetic north pole
on the branded side. The output does not change if the
magnetic field is removed. For changing the output
state, the opposite magnetic field polarity must be
applied.
1.3. Marking Code
All Hall sensors have a marking on the package surface (branded side). This marking includes the name
of the sensor and the temperature range.
1.1. Features
– operates from 3.8 V to 24 V supply voltage
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
Type
– overvoltage protection at all pins
Temperature Range
K
E
– reverse-voltage protection at VDD-pin
<
HAL 525
525K
−
– magnetic characteristics are robust against
mechanical stress effects
HAL 526
526K
526E
– short-circuit protected open-drain output by thermal
shut down
– constant switching points over a wide supply voltage range
1.4. Operating Junction Temperature Range (TJ)
– the decrease of magnetic flux density caused by
rising temperature in the sensor system is compensated by a built-in negative temperature coefficient
of the magnetic characteristics
The Hall sensors from Micronas are specified to the
chip temperature (junction temperature TJ).
– ideal sensor for window lifter, ignition timing, and
revolution counting in extreme automotive and
industrial environments
E: TJ = −40 °C to +100 °C
– EMC corresponding to ISO 7637
4
K: TJ = −40 °C to +140 °C
The relationship between ambient temperature (TA)
and junction temperature is explained in Section 5.1.
on page 23.
Nov. 30, 2009; DSH000144_003EN
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HAL 525, HAL 526
DATA SHEET
1.5. Hall Sensor Package Codes
HALXXXPA-T
Temperature Range: K or E
Package: SF for SOT89B-1
UA for TO92UA
Type: 526
Example: HAL526UA-E
→ Type: 526
→ Package: TO92UA
→ Temperature Range: TJ = −40 °C to +100 °C
Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: “Hall Sensors:
Ordering Codes, Packaging, Handling”.
1.6. Solderability and Welding
During soldering reflow processing and manual
reworking, a component body temperature of 260 C
should not be exceeded.
Welding
Device terminals should be compatible with laser and
resistance welding. Please note that the success of
the welding process is subject to different welding
parameters which will vary according to the welding
technique used. A very close control of the welding
parameters is absolutely necessary in order to reach
satisfying results. Micronas, therefore, does not give
any implied or express warranty as to the ability to
weld the component.
1.7. Pin Connections
1 VDD
3
OUT
2 GND
Fig. 1–1: Pin configuration
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Nov. 30, 2009; DSH000144_003EN
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HAL 525, HAL 526
DATA SHEET
2. Functional Description
The Hall effect sensor is a monolithic integrated circuit
that switches in response to magnetic fields. If a magnetic field with flux lines perpendicular to the sensitive
area is applied to the sensor, the biased Hall plate
forces a Hall voltage proportional to this field. The Hall
voltage is compared with the actual threshold level in
the comparator. The temperature-dependent bias
increases the supply voltage of the Hall plates and
adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the magnetic
field exceeds the threshold levels, the open drain output switches to the appropriate state. The built-in hysteresis eliminates oscillation and provides switching
behavior of output without bouncing.
1
VDD
Reverse
Voltage &
Overvoltage
Protection
Temperature
Dependent
Bias
Hysteresis
Control
Short Circuit
and
Overvoltage
Protection
Hall Plate
Comparator
3
Switch
Output
OUT
Clock
2
GND
Magnetic offset caused by mechanical stress is compensated for by using the “switching offset compensation technique”. Therefore, an internal oscillator provides a two phase clock. The Hall voltage is sampled
at the end of the first phase. At the end of the second
phase, both sampled and actual Hall voltages are
averaged and compared with the actual switching
point. Subsequently, the open drain output switches to
the appropriate state. The time from crossing the magnetic switching level to switching of output can vary
between zero and 1/fosc.
Shunt protection devices clamp voltage peaks at the
Output-pin and VDD-pin together with external series
resistors. Reverse current is limited at the VDD-pin by
an internal series resistor up to −15 V. No external
reverse protection diode is needed at the VDD-pin for
reverse voltages ranging from 0 V to −15 V.
Fig. 2–1: HAL 525 and HAL 526 block diagram
fosc
t
B
BON
t
VOUT
VOH
VOL
t
IDD
1/fosc = 9 μs
tf
t
Fig. 2–2: Timing diagram of HAL 526
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HAL 525, HAL 526
DATA SHEET
3. Specifications
3.1. Outline Dimensions
Fig. 3–1:
SOT89B-1: Plastic Small Outline Transistor package, 4 leads
Ordering code: SF
Weight approximately 0.034 g
Micronas
Nov. 30, 2009; DSH000144_003EN
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HAL 525, HAL 526
DATA SHEET
Fig. 3–2:
TO92UA-2: Plastic Transistor Standard UA package, 3 leads, not spread
Weight approximately 0.106 g
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HAL 525, HAL 526
DATA SHEET
Fig. 3–3:
TO92UA-1: Plastic Transistor Standard UA package, 3 leads, spread
Weight approximately 0.106 g
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Nov. 30, 2009; DSH000144_003EN
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HAL 525, HAL 526
DATA SHEET
Fig. 3–4:
TO92-2: Dimensions ammopack inline, not spread
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HAL 525, HAL 526
DATA SHEET
Fig. 3–5:
TO92UA-1: Dimensions ammopack inline, spread
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Nov. 30, 2009; DSH000144_003EN
11
HAL 525, HAL 526
DATA SHEET
3.2. Dimensions of Sensitive Area
0.25 mm × 0.12 mm
3.3. Positions of Sensitive Areas
SOT89B-1
TO92UA-1/-2
y
0.95 mm nominal
1.0 mm nominal
A4
0.3 mm nominal
0.3 mm nominal
D1
see drawing
3.05 mm ± 0.05 mm
H1
Not applicable
min. 21 mm
max. 23.1 mm
3.4. Absolute Maximum Ratings
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute
maximum rating conditions for extended periods will affect device reliability.
This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric
fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this circuit.
All voltages listed are referenced to ground (GND).
Symbol
Parameter
Pin No.
Min.
Max.
Unit
VDD
Supply Voltage
1
−15
281)
V
VO
Output Voltage
3
−0.3
281)
V
IO
Continuous Output On Current
3
−
501)
mA
TJ
Junction Temperature Range
−40
−40
150
1702)
°C
1)
2)
as long as TJmax is not exceeded
t < 1000h
3.4.1. Storage and Shelf Life
The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of
30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required.
Solderability is guaranteed for one year from the date code on the package.
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HAL 525, HAL 526
DATA SHEET
3.5. Recommended Operating Conditions
Functional operation of the device beyond those indicated in the “Recommended Operating Conditions” of this specification is not implied, may result in unpredictable behavior of the device and may reduce reliability and lifetime.
All voltages listed are referenced to ground (GND).
Symbol
Parameter
Pin No.
Min.
Max.
Unit
VDD
Supply Voltage
1
3.8
24
V
IO
Continuous Output On Current
3
0
20
mA
VO
Output Voltage
(output switched off)
3
0
24
V
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Nov. 30, 2009; DSH000144_003EN
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HAL 525, HAL 526
DATA SHEET
3.6. Characteristics
at TJ = −40 °C to +140 °C, VDD = 3.8 V to 24 V,
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for TJ = 25 °C and VDD = 12 V.
Symbol
Parameter
Pin No.
Min.
Typ.
Max.
Unit
Test Conditions
IDD
Supply Current over
Temperature Range
1
1.6
3
5.2
mA
VDDZ
Overvoltage Protection
at Supply
1
−
28.5
32
V
IDD = 25 mA, TJ = 25 °C,
t = 20 ms
VOZ
Overvoltage Protection at Output
3
−
28
32
V
IOH = 25 mA, TJ = 25 °C,
t = 20 ms
VOL
Output Voltage
3
−
130
280
mV
IOL = 20 mA, TJ = 25 °C
VOL
Output Voltage over
Temperature Range
3
−
130
400
mV
IOL = 20 mA
IOH
Output Leakage Current
3
−
0.06
0.1
μA
Output switched off,
TJ = 25 °C, VOH = 3.8 to 24 V
IOH
Output Leakage Current over
Temperature Range
3
−
−
10
μA
Output switched off,
TJ ≤150 °C, VOH = 3.8 to 24V
fosc
Internal Oscillator Chopper
Frequency over Temperature
Range
−
73
100
115
150
−
−
kHz
kHz
HAL 525
HAL 526
ten(O)
Enable Time of Output after
Setting of VDD
1
−
30
70
μs
VDD = 12 V
B > BON + 2 mT or
B < BOFF − 2 mT
tr
Output Rise Time
3
−
75
400
ns
tf
Output Fall Time
3
−
50
400
ns
VDD = 12 V,
RL = 820 Ω,
CL = 20 pF
SOT89B Package
Thermal Resistance
Rthja
Junction to Ambient
−
−
−
2091)
K/W
Rthjc
Junction to Case
−
−
−
561)
K/W
Rthjs
Junction to Solder Point
−
−
−
822)
K/W
Junction to Ambient
−
−
−
2461)
K/W
Rthjc
Junction to Case
−
−
−
70
Rthjs
Junction to Solder Point
−
−
−
1272)
30 mm x 10 mm x 1.5 mm,
pad size (see Fig. 3–6)
TO92UA Package
Thermal Resistance
Rthja
1)
K/W
K/W
1)
Measured
2)
with a 1s0p board
Measured with a 1s1p board
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Micronas
HAL 525, HAL 526
DATA SHEET
1.80
1.05
1.45
2.90
1.05
0.50
1.50
Fig. 3–6: Recommended pad size SOT89B-1
Dimensions in mm
3.7. Magnetic Characteristics Overview
at TJ = −40 °C to +140 °C, VDD = 3.8 V to 24 V
Typical Characteristics for TJ = 25 °C and VDD = 12 V.
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Sensor
Switching Type
Parameter
On point BON
Off point BOFF
Hysteresis BHYS
Unit
TJ
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
HAL 525
−40 °C
11.8
15.8
19.2
−19.2
−15.8
−11.8
27.4
31.6
35.8
mT
latching
25 °C
11
14
17
−17
−14
−11
24
28
32
mT
140 °C
6.5
10
14
−14
−10
−6.5
16
20
26
mT
HAL 526
−40 °C
11.8
15.8
19.2
−19.2
−15.8
−11.8
27.4
31.6
35.8
mT
latching
25 °C
11
14
17
−17
−14
−11
24
28
32
mT
140 °C
6.5
10
14
−14
−10
−6.5
16
20
26
mT
Note: For detailed descriptions of the individual types, see pages 19 and following.
Micronas
Nov. 30, 2009; DSH000144_003EN
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HAL 525, HAL 526
DATA SHEET
mA
25
mA
5
HAL 52x
HAL 52x
20
IDD
IDD
TA = –40 °C
15
4
TA = 25 °C
TA = 170 °C
10
3
5
2
0
VDD = 3.8 V
VDD = 12 V
–5
VDD = 24 V
1
–10
–15
–15–10 –5 0
5 10 15 20 25 30 35 V
0
–50
0
50
100
VDD
Fig. 3–9: Typical supply current
versus ambient temperature
HAL 52x
4.5
IDD
200 °C
TA
Fig. 3–7: Typical supply current
versus supply voltage
mA
5.0
150
kHz
200
HAL 52x
180
4.0
VDD = 3.8 V
fosc 160
TA = –40 °C
3.5
140
TA = 25 °C
3.0
VDD = 4.5 V...24 V
120
TA = 100 °C
2.5
100
TA = 170 °C
2.0
80
1.5
60
1.0
40
0.5
20
0
1
2
3
4
5
6
7
8 V
0
–50
VDD
Fig. 3–8: Typical supply current
versus supply voltage
16
0
50
100
150
200 °C
TA
Fig. 3–10: Typ. internal chopper frequency
versus ambient temperature
Nov. 30, 2009; DSH000144_003EN
Micronas
HAL 525, HAL 526
DATA SHEET
mV
400
mV
400
HAL 52x
HAL 52x
IO = 20 mA
IO = 20 mA
350
VDD = 3.8 V
VOL
VOL
300
VDD = 4.5 V
300
VDD = 24 V
TA = 170 °C
250
TA = 100 °C
200
200
TA = 25 °C
150
TA = –40 °C
100
100
50
0
0
5
10
15
20
25
30 V
0
–50
0
50
100
200 °C
TA
VDD
Fig. 3–11: Typical output low voltage
versus supply voltage
mV
600
150
Fig. 3–13: Typical output low voltage
versus ambient temperature
HAL 52x
μA
104
HAL 52x
IO = 20 mA
103
VOL
500
IOH 102
101
400
TA = 170 °C
TA = 150 °C
100
300
10–1
TA = 170 °C
TA = 100 °C
10–2
TA =100 °C
200
10–3
TA = 25 °C
10–4
TA = –40 °C
100
TA = 25 °C
TA = –40 °C
10–5
0
3
4
5
6
7 V
10–6
15
25
30
35 V
VOH
VDD
Fig. 3–12: Typical output low voltage
versus supply voltage
Micronas
20
Fig. 3–14: Typ. output high current
versus output voltage
Nov. 30, 2009; DSH000144_003EN
17
HAL 525, HAL 526
DATA SHEET
μA
HAL 52x
102
dBμV
80
HAL 52x
VP = 12 V
TA = 25 °C
Quasi-PeakMeasurement
test circuit
70
101
VDD
IOH
60
100
50
max. spurious
signals
10–1
40
10–2
VOH = 24 V
30
VOH = 3.8 V
10–3
20
10–4
10–5
–50
10
0
50
100
150
200 °C
0
0.01
Fig. 3–15: Typical output leakage current
versus ambient temperature
IDD
1.00
1
10.00
100.00
10
100 1000.00
1000 MHz
f
TA
dBμA
30
0.10
Fig. 3–17: Typ. spectrum of supply voltage
HAL 52x
VDD = 12 V
TA = 25 °C
Quasi-PeakMeasurement
20
max. spurious
signals
10
0
–10
–20
–30
0.01
0.10
1.00
1
10.00
100.00
10
100 1000.00
1000 MHz
f
Fig. 3–16: Typ. spectrum of supply current
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HAL 525, HAL 526
DATA SHEET
4. Type Description
4.1. HAL 525
Applications
<
The HAL 525 is an optimal sensor for applications
with alternating magnetic signals such as:
<
<
The HAL 525 is a latching sensor (see Fig. 4–1).
– multipole magnet applications,
– rotating speed measurement,
The output turns low with the magnetic south pole on
the branded side of the package and turns high with
the magnetic north pole on the branded side. The output does not change if the magnetic field is removed.
For changing the output state, the opposite magnetic
field polarity must be applied.
– commutation of brushless DC motors, and
– window lifter.
Output Voltage
VO
For correct functioning in the application, the sensor
requires both magnetic polarities (north and south) on
the branded side of the package.
BHYS
VOL
Magnetic Features:
– switching type: latching
BOFF
– low sensitivity
0
B
BON
Fig. 4–1: Definition of magnetic switching points for
<
the HAL 525
– typical BON: 14 mT at room temperature
– typical BOFF: −14 mT at room temperature
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
Note:
– typical temperature coefficient of magnetic switching
points is −2000 ppm/K
<
:HAL 525 is not available for new designs.
Please use HAL 526 instead.
Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Magnetic Offset
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
11.8
15.8
19.2
−19.2
−15.8
−11.8
27.4
31.6
35.8
25 °C
11
14
17
−17
−14
−11
24
28
32
100 °C
8
11
15.5
−15.5
−11
−8
18.5
22
28.7
0
mT
140 °C
6.5
10
14
−14
−10
−6.5
16
20
26
0
mT
−40 °C
Min.
Typ.
Unit
Max.
0
−2
0
mT
2
mT
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
Micronas
Nov. 30, 2009; DSH000144_003EN
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HAL 525, HAL 526
DATA SHEET
mT
20
mT
20
HAL 525
BONmax
BON
BON
BOFF
15
BON
BOFF
15
10
10
5
5
TA = –40 °C
TA = 25 °C
0
BONtyp
BONmin
VDD = 3.8 V
0
TA = 100 °C
VDD = 4.5 V...24 V
TA = 170 °C
–5
HAL 525
–5
BOFFmax
BOFF
–10
–10
–15
–15
–20
–20
–50
BOFFtyp
BOFFmin
0
5
10
15
20
25
30 V
Fig. 4–2: Typ. magnetic switching points
versus supply voltage
HAL 525
BON
BON
BOFF
50
100
150
200 °C
TA, TJ
VDD
mT
20
0
15
Fig. 4–4: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus ambient temperature”, the curves for
B ONmin, BONmax, BOFFmin, and B OFFmax
refer to junction temperature, whereas typical
curves refer to ambient temperature.
10
5
TA = –40 °C
TA = 25 °C
0
TA = 100 °C
TA = 170 °C
–5
BOFF
–10
–15
–20
3
3.5
4.0
4.5
5.0
5.5
6.0 V
VDD
Fig. 4–3: Typ. magnetic switching points
versus supply voltage
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Micronas
HAL 525, HAL 526
DATA SHEET
4.2. HAL 526
Applications
The HAL 526 is a latching sensor (see Fig. 4–5).
The HAL 526 is an optimal sensor for applications with
alternating magnetic signals such as:
The output turns low with the magnetic south pole on
the branded side of the package and turns high with
the magnetic north pole on the branded side. The output does not change if the magnetic field is removed.
For changing the output state, the opposite magnetic
field polarity must be applied.
– multipole magnet applications,
– rotating speed measurement,
– commutation of brushless DC motors, and
– window lifter.
For correct functioning in the application, the sensor
requires both magnetic polarities (north and south) on
the branded side of the package.
Output Voltage
VO
BHYS
Magnetic Features:
– switching type: latching
VOL
– low sensitivity
– typical BON: 14 mT at room temperature
BOFF
– typical BOFF: −14 mT at room temperature
0
B
BON
Fig. 4–5: Definition of magnetic switching points for
the HAL 526
– operates with static magnetic fields and dynamic
magnetic fields up to 10 kHz
– typical temperature coefficient of magnetic switching
points is −2000 ppm/K
Magnetic Characteristics at TJ = −40 °C to +140 °C, VDD = 3.8 V to 24 V,
Typical Characteristics for VDD = 12 V
Magnetic flux density values of switching points.
Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter
TJ
On point BON
Off point BOFF
Hysteresis BHYS
Magnetic Offset
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
11.8
15.8
19.2
−19.2
−15.8
−11.8
27.4
31.6
35.8
25 °C
11
14
17
−17
−14
−11
24
28
32
100 °C
8
11
15.5
−15.5
−11
−8
18.5
22
28.7
0
mT
140 °C
6.5
10
14
−14
−10
−6.5
16
20
26
0
mT
−40 °C
Min.
Typ.
Unit
Max.
0
−2
0
mT
2
mT
The hysteresis is the difference between the switching points BHYS = BON − BOFF
The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
Micronas
Nov. 30, 2009; DSH000144_003EN
21
HAL 525, HAL 526
DATA SHEET
mT
20
mT
20
HAL 525
BONmax
BON
BON
BOFF
15
BON
BOFF
15
10
10
5
5
TA = –40 °C
TA = 25 °C
0
BONtyp
BONmin
VDD = 3.8 V
0
TA = 100 °C
VDD = 4.5 V...24 V
TA = 170 °C
–5
HAL 525
–5
BOFFmax
BOFF
–10
–10
–15
–15
–20
–20
–50
BOFFtyp
BOFFmin
0
5
10
15
20
25
30 V
Fig. 4–6: Typ. magnetic switching points
versus supply voltage
HAL 525
BON
BON
BOFF
50
100
150
200 °C
TA, TJ
VDD
mT
20
0
15
Fig. 4–8: Magnetic switching points
versus temperature
Note: In the diagram “Magnetic switching points versus ambient temperature”, the curves for
B ONmin, BONmax, BOFFmin, and B OFFmax
refer to junction temperature, whereas typical
curves refer to ambient temperature.
10
5
TA = –40 °C
TA = 25 °C
0
TA = 100 °C
TA = 170 °C
–5
BOFF
–10
–15
–20
3
3.5
4.0
4.5
5.0
5.5
6.0 V
VDD
Fig. 4–7: Typ. magnetic switching points
versus supply voltage
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Nov. 30, 2009; DSH000144_003EN
Micronas
HAL 525, HAL 526
DATA SHEET
5. Application Notes
5.3. Start-Up Behavior
5.1. Ambient Temperature
Due to the active offset compensation, the sensors
have an initialization time (enable time ten(O)) after
applying the supply voltage. The parameter ten(O) is
specified in the Characteristics (see page 14).
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature TJ) is higher
than the temperature outside the package (ambient
temperature TA).
T J = T A + ΔT
At static conditions and continuous operation, the following equation applies:
ΔT = IDD × VDD × R th
During the initialization time, the output state is not
defined and the output can toggle. After ten(O), the output will be low if the applied magnetic field B is above
BON. The output will be high if B is below BOFF.
For magnetic fields between BOFF and BON, the output
state of the HAL sensor after applying VDD will be
either low or high. In order to achieve a well-defined
output state, the applied magnetic field must be above
BONmax, respectively, below BOFFmin.
5.4. EMC and ESD
If IOUT > IDD, please contact Micronas application support for detailed instructions on calculating ambienttemperature.
For applications with disturbances on the supply line or
radiated disturbances, a series resistor and a capacitor
are recommended (see Fig. 5–1). The series resistor
and the capacitor should be placed as closely as possible to the HAL sensor.
For typical values, use the typical parameters. For
worst case calculation, use the max. parameters for
IDD and Rth, and the max. value for VDD from the application.
Applications with this arrangement passed the EMC
tests according to the product standards ISO 7637.
For all sensors, the junction temperature range TJ is
specified. The maximum ambient temperature TAmax
can be calculated as:
Please contact Micronas for the detailed investigation
reports with the EMC and ESD results.
RV
220 Ω
T Amax = T Jmax – ΔT
1
VEMC
VP
5.2. Extended Operating Conditions
1.2 kΩ
OUT
3
4.7 nF
All sensors fulfill the electrical and magnetic characteristics when operated within the Recommended Operating Conditions (see page 13).
RL
VDD
20 pF
2 GND
Supply Voltage Below 3.8 V
Fig. 5–1: Test circuit for EMC investigations
Typically, the sensors operate with supply voltages
above 3 V, however, below 3.8 V some characteristics
may be outside the specification.
Note: The functionality of the sensor below 3.8 V is
not tested. For special test conditions, please
contact Micronas.
Micronas
Nov. 30, 2009; DSH000144_003EN
23
HAL 525, HAL 526
DATA SHEET
6. Data Sheet History
1. Final data sheet: “HAL 525 Hall Effect Sensor IC”,
April 23, 1997, 6251-465-1DS. First release of the
final data sheet.
2. Final data sheet: “HAL 525 Hall Effect Sensor IC”,
March 10, 1999, 6251-465-2DS. Second release of
the final data sheet. Major changes:
– additional package SOT-89B
– outline dimensions for SOT-89A and TO-92UA
changed
7. Data Sheet: “HAL 526 Hall-Effect Switch”,
Nov. 8, 2007, DSH000144_001EN. Seventh release
of the data sheet. Major changes:
– specification for HAL 535 removed
– package diagrams for SOT89B-1, TO92UA-1, and
TO92UA-2 updated
– ammopack diagrams for TO92UA-1/-2 updated
8. Data Sheet: “HAL 526 Hall-Effect Switches”,
Feb. 6, 2009, DSH000144_002EN. Eighth release
of the data sheet. Major changes:
– Section 1.6. “Solderability and Welding” updated
– electrical characteristics changed
– section 4.2.: Extended Operating Conditions added
– section 4.3.: Start-up Behavior added
3. Final data sheet: “HAL 525, HAL 535 Hall Effect
Sensor Family”, Aug. 30, 2000, 6251-465-3DS.
Third release of the final data sheet. Major changes:
9. Data Sheet: “HAL 525, HAL 526 Hall-Effect
Switches”,
Nov. 30, 2009, DSH000144_003EN. Ninth release
of the data sheet. Major changes:
– HAL 525 added
– new sensor HAL 535 added
– outline dimensions for SOT-89B: reduced tolerances
– SMD package SOT-89A removed
– temperature range “C” removed
4. Data Sheet: “HAL 525, HAL 535 Hall Effect Sensor
Family”, Aug. 8, 2002, 6251-465-4DS. Fourth
release of the data sheet. Major changes:
– outline dimensions for TO-92UA changed
– temperature range “A” removed
5. Data Sheet: “HAL 525, HAL 526, HAL 535 Hall
Effect Sensor Family”, Oct. 22, 2002, 6251-4655DS. Fifth release of the data sheet. Major changes:
– new sensor HAL 526 added
6. Data Sheet: “HAL 526, HAL 535 Hall Effect Sensor
Family”, March 31, 2004, 6251-465-6DS. Sixth
release of the data sheet. Major changes:
– specification for HAL525 removed
– new package diagrams for SOT89B-1 and
TO92UA-1
– package diagram for TO92UA-2 added
– ammopack diagrams for TO92UA-1/-2 added
Micronas GmbH
Hans-Bunte-Strasse 19 ⋅ D-79108 Freiburg ⋅ P.O. Box 840 ⋅ D-79008 Freiburg, Germany
Tel. +49-761-517-0 ⋅ Fax +49-761-517-2174 ⋅ E-mail: [email protected] ⋅ Internet: www.micronas.com
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Nov. 30, 2009; DSH000144_003EN
Micronas
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