APT6011LVFR 600V POWER MOS V ® 49A 0.110W FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche Tested • Lower Leakage • Popular TO-264 Package TO-264 D G • Faster Switching S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25°C unless otherwise specified. Parameter APT6011LVFR UNIT 600 Volts L A C I N H C N E T O I D T E A C M N R A O V F D A IN Drain-Source Voltage 49 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 625 Watts Linear Derating Factor 5.0 W/°C VGSM PD TJ,TSTG 196 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 300 49 (Repetitive and Non-Repetitive) 1 EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 50 4 Volts °C Amps mJ 3000 STATIC ELECTRICAL CHARACTERISTICS ID(on) RDS(on) IDSS IGSS VGS(th) MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 600 Volts 49 Amps On State Drain Current 2 (VDS > I D(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.]) TYP MAX 0.110 Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) 250 UNIT Ohms µA Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) 1000 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 4 Volts Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 Rev- 12-99 BVDSS Characteristic / Test Conditions 050-8060 Symbol DYNAMIC CHARACTERISTICS Symbol APT6011LVFR Test Conditions Characteristic MIN TYP Ciss Input Capacitance VGS = 0V 8310 Coss Output Capacitance VDS = 25V 990 Crss Reverse Transfer Capacitance f = 1 MHz 390 VGS = 10V 370 VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C 51 156 VGS = 15V 17 VDD = 0.5 VDSS 16 ID = ID [Cont.] @ 25°C 63 RG = 0.6W 6 Qg Qgs Qgd t d(on) tr t d(off) tf Total Gate Charge 3 Gate-Source Charge MAX pF L A C I N H C N E T O I D T E A C M N R A O V F D A IN Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time UNIT nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS Characteristic / Test Conditions TYP Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 dv/ dt MIN Peak Diode Recovery dv/ 49 196 (Body Diode) dt MAX (VGS = 0V, IS = -ID [Cont.]) 5 UNIT Amps 1.3 Volts 5 V/ns t rr Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 300 Tj = 125°C 600 Q rr Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 2.0 Tj = 125°C 6.8 IRRM Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/µs) Tj = 25°C 15 Tj = 125°C 27 ns µC Amps THERMAL CHARACTERISTICS Symbol Characteristic RqJC Junction to Case RqJA Junction to Ambient MIN 40 temperature. 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 UNIT TO-264 Package Outline 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) Drain 5.79 (.228) 6.20 (.244) 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 19.81 (.780) 21.39 (.842) 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) °C/W 4 Starting T = +25°C, L = 2.49mH, R = 25W, Peak I = 49A j G L 5 I £ I [Cont.], di/ = 100A/µs, T £ 150°C, R = 2.0W, V = 200V. S D j G R dt APT Reserves the right to change, without notice, the specifications and information contained herein. Rev- 12-99 MAX 0.20 1 Repetitive Rating: Pulse width limited by maximum junction 050-8060 TYP 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) 2.29 (.090) 2.69 (.106) Gate Drain Source