MCH6655 Ordering number : ENA1043 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6655 General-Purpose Switching Device Applications Features • • 4V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Symbol Conditions Ratings Unit VDSS VGSS --60 ±20 V ID --120 mA --480 mA Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% Allowable Power Dissipation PD When mounted on ceramic substrate (900mm2✕0.8mm) 1unit Channel Temperature Storage Temperature V 0.6 W Tch 150 °C Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Symbol V(BR)DSS IDSS Conditions ID=--1mA, VGS=0V Ratings min typ Unit max --60 V VDS=--60V, VGS=0V --1 μA ±10 μA IGSS VGS(off) VGS=±16V, VDS=0V VDS=--10V, ID=--100μA --1.2 ⏐yfs⏐ RDS(on)1 VDS=--10V, ID=--60mA 100 ID=--60mA, VGS=--10V 5.1 6.6 RDS(on)2 Ciss ID=--30mA, VGS=--4V 6.8 9.6 VDS=--20V, f=1MHz 13.5 pF Output Capacitance Coss VDS=--20V, f=1MHz 3.4 pF Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 1.3 pF Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Marking : XG --2.6 180 V mS Ω Ω Continued on next page. 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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 20608PE TI IM TC-00001172 No. A1043-1/4 MCH6655 Continued from preceding page. Parameter Symbol Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Ratings Conditions min See specified Test Circuit. 36.5 ns See specified Test Circuit. 38 ns td(off) tf See specified Test Circuit. 455 ns See specified Test Circuit. 160 ns 1.6 nC 0.4 nC Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=--30V, VGS=--10V, ID=--120mA VDS=--30V, VGS=--10V, ID=--120mA VDS=--30V, VGS=--10V, ID=--120mA Diode Forward Voltage VSD IS=--120mA, VGS=0V Package Dimensions 0.25 5 0.16 --0.85 6 5 4 1 2 3 0.15 4 2.1 1.6 0 to 0.02 0.25 1 2 V 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 Top view 3 0.65 0.3 0.85 0.07 nC --1.2 Electrical Connection unit : mm (typ) 7022A-006 6 Unit max td(on) tr Total Gate Charge 2.0 typ 1 2 3 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 6 5 4 SANYO : MCPH6 Switching Time Test Circuit VDD= --30V VIN 0V --10V ID= --60mA RL=500Ω VOUT VIN D PW=10μs D.C.≤1% Rg G P.G MCH6655 50Ω S Rg=5kΩ No. A1043-2/4 MCH6655 ID -- VDS 0V . --3 --100 --40 --20 --0.8 --1.0 0 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 12 --60mA 10 8 ID= --30mA 4 2 0 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 Gate-to-Source Voltage, VGS -- V 5 5° = Ta 7 --2 C 25 °C 75 5 °C 3 2 10 --1.0 2 3 5 7 --10 2 3 5 7 --100 2 Drain Current, ID -- mA 3 5 7 td(off) 4 2 --40 --20 0 20 40 60 80 100 120 140 160 IT10868 IS -- VSD VGS=0V --100 7 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 IT10870 Ciss, Coss, Crss -- VDS f=1MHz Ciss 100 7 tr 10 7 5 Coss 3 2 Crss td(on) 3 2 --0.01 10 = -V GS 6 A 60m -I = V, D 2 tf 5 4 = -V GS 3 3 2 -I = V, D Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- pF 5 8 IT10869 VDD= --30V VGS= --10V --3.5 IT10866 A --0.1 --0.2 7 SW Time -- ID 1000 --3.0 Ambient Temperature, Ta -- °C Source Current, IS -- mA 2 --2.5 30m --1000 7 5 3 2 3 100 10 0 --60 --20 VDS= --10V --2.0 12 IT10867 ⏐yfs⏐ -- ID 7 --1.5 RDS(on) -- Ta 14 Ta=25°C 6 --1.0 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 14 --0.5 IT10865 --25°C --0.6 25°C --0.4 Ta=7 5°C --0.2 Drain-to-Source Voltage, VDS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Ta= 7 0 0 Forward Transfer Admittance, ⏐yfs⏐ -- mS --40 --20 0 Switching Time, SW Time -- ns --60 25°C --25°C V --2.5 V GS= --60 --80 5°C Drain Current, ID -- mA --80 VDS= --10V --5 .0 --1 5.0 V --1 0 Drain Current, ID -- mA --100 ID -- VGS --120 V -4 .0 V .0V --8 .0V --120 1.0 7 2 3 5 7 --0.1 2 Drain Current, ID -- A 3 5 7 IT10871 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 IT10872 No. A1043-3/4 MCH6655 VGS -- Qg --10 VDS= --30V ID= --120mA --9 2 --7 --6 --5 --4 PW≤10μs 1m 100μ s s 1 0m 10 0m s s IDP= --480mA --3 3 2 --2 3 2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Total Gate Charge, Qg -- nC 1.4 1.6 IT10873 PD -- Ta 0.7 ID= --120mA --0.1 7 5 --0.01 7 5 --1 Allowable Power Dissipation, PD -- W ASO 3 --8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --1.0 7 5 Operation in this area is limited by RDS(on). D (T C op a= er 25 ati °C on ) Ta=25°C Single pulse When mounted on ceramic substrate (900mm2✕0.8mm) 1unit --0.001 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 --100 IT13271 When mounted on ceramic substrate (900mm2✕0.8mm) 1unit 0.6 0.5 0.4 0.3 0.2 0.1 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT13269 Note on usage : Since the MCH6655 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of February, 2008. Specifications and information herein are subject to change without notice. PS No. A1043-4/4