CY7C1355B CY7C1357B 9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL™ Architecture Features • JTAG boundary scan for BGA and fBGA packages • No Bus Latency™ (NoBL™) architecture eliminates dead cycles between write and read cycles. • Can support up to 133-MHz bus operations with zero wait states — Data is transferred on every clock • Pin compatible and functionally equivalent to ZBT™ devices • Internally self-timed output buffer control to eliminate the need to use OE • Registered inputs for flow-through operation • Byte Write capability • 3.3V/2.5V I/O power supply • Fast clock-to-output times — 6.5 ns (for 133-MHz device) — 7.0 ns (for 117-MHz device) — 7.5 ns (for 100-MHz device) • Clock Enable (CEN) pin to enable clock and suspend operation • Synchronous self-timed writes • Asynchronous Output Enable • Offered in JEDEC-standard 100 TQFP, 119-Ball BGA and 165-Ball fBGA packages • Three chip enables for simple depth expansion. • Automatic Power-down feature available using ZZ mode or CE deselect. • Burst Capability—linear or interleaved burst order • Low standby power Functional Description[1] The CY7C1355B/CY7C1357B is a 3.3V, 256K x 36/ 512K x 18 Synchronous Flow-through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1355B/CY7C1357B is equipped with the advanced No Bus Latency (NoBL) logic required to enable consecutive Read/Write operations with data being transferred on every clock cycle. This feature dramatically improves the throughput of data through the SRAM, especially in systems that require frequent Write-Read transitions. All synchronous inputs pass through input registers controlled by the rising edge of the clock. The clock input is qualified by the Clock Enable (CEN) signal, which when deasserted suspends operation and extends the previous clock cycle. Maximum access delay from the clock rise is 6.5 ns (133-MHz device). Write operations are controlled by the two or four Byte Write Select (BWX) and a Write Enable (WE) input. All writes are conducted with on-chip synchronous self-timed write circuitry. Three synchronous Chip Enables (CE1, CE2, CE3) and an asynchronous Output Enable (OE) provide for easy bank selection and output three-state control. In order to avoid bus contention, the output drivers are synchronously three-stated during the data portion of a write sequence. Selection Guide 133 MHz 117 MHz 100 MHz Unit Maximum Access Time 6.5 7.0 7.5 ns Maximum Operating Current 250 220 180 mA Maximum CMOS Standby Current 30 30 30 mA Note: 1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com. Cypress Semiconductor Corporation Document #: 38-05117 Rev. *B • 3901 North First Street • San Jose, CA 95134 • 408-943-2600 Revised January 27, 2004 CY7C1355B CY7C1357B 1 Logic Block Diagram – CY7C1355B (256K x 36) ADDRESS REGISTER A0, A1, A A1 D1 A0 D0 MODE CLK CEN CE C ADV/LD C BURST LOGIC Q1 A1' A0' Q0 WRITE ADDRESS REGISTER BWA BWA1, B A0, A BWC A0 BWMODE D CLK CEN WRITE DRIVERS WRITE REGISTRY ADDRESS AND DATA COHERENCY CONTROL LOGIC A1 REGISTER CE WEC D1 D0 ADV/LD C BURST LOGIC Q1 A1' A0' Q0 INPUT E REGISTER SLEEP CONTROL ADV/LD BWA WRITE DRIVERS WRITE REGISTRY AND DATA COHERENCY CONTROL LOGIC BWB MEMORY ARRAY Logic Block Diagram – CY7C1357B (512K x 18) A0, A1, AWE ADDRESS REGISTER A1 D1 A0 D0 MODE CLK CEN CE C OE CE1 CE2 CE3 ZZ ADV/LD C BURST LOGIC Q1 A1' A0' Q0 BWB Document #: 38-05117 Rev. *B E WRITELOGIC ADDRESS READ REGISTER SLEEP CONTROL WRITE REGISTRY AND DATA COHERENCY CONTROL LOGIC WRITE DRIVERS MEMORY ARRAY S E N S E A M P S WE OE CE1 CE2 CE3 ZZ DQs DQPA DQPB INPUT E REGISTER ADV/LD BWA E B U F F E R S S T E E R I N G A M P S DQs DQPA DQPB DQPC DQPD O U T P U T D A T A S E N S E B U F F E R S S T E E R I N G READ LOGIC ZZ 2 MEMORY ARRAY A M P S WRITE ADDRESS REGISTER OE CE1 CE2 CE3 D A T A S E N S E ADV/LD O U T P U T D A T A S T E E R I N G O U T P U T B U F F E R S DQs DQPA DQPB E INPUT E REGISTER READ LOGIC SLEEP CONTROL Page 2 of 33 CY7C1355B CY7C1357B Pin Configurations Document #: 38-05117 Rev. *B A 81 A 82 A 83 84 NC / 18M ADV/LD 85 OE 86 CEN VSS 90 87 VDD 91 WE CE3 92 CLK BWA 93 89 BWC BWB BWD 96 94 CE2 97 95 CE1 A 98 88 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 A NC / 36M 49 43 NC / 72M A 42 48 41 VDD 47 40 VSS A 39 NC / 144M A 38 NC / 288M 46 37 A0 A 36 A1 45 35 A A 34 A A 33 A 44 32 A CY7C1355B 31 BYTE D 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 MODE BYTE C DQPC DQC DQC VDDQ VSS DQC DQC DQC DQC VSS VDDQ DQC DQC Vss/DNU VDD NC VSS DQD DQD VDDQ VSS DQD DQD DQD DQD VSS VDDQ DQD DQD DQPD 99 100 A 100-lead TQFP DQPB DQB DQB VDDQ VSS DQB DQB DQB DQB VSS VDDQ DQB DQB VSS NC VDD ZZ DQA DQA VDDQ VSS DQA DQA DQA DQA VSS VDDQ DQA DQA DQPA BYTE B BYTE A Page 3 of 33 CY7C1355B CY7C1357B Pin Configurations (continued) Document #: 38-05117 Rev. *B A 81 A 82 A 83 84 NC / 18M ADV/LD 85 OE 86 90 CEN VSS 91 87 VDD 92 WE CE3 93 CLK BWA 94 89 NC BWB 95 NC CE2 97 96 CE1 A 98 88 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 A NC / 36M 49 43 NC / 72M A 42 48 41 VDD 47 40 VSS A 39 NC / 144M A 38 NC / 288M 46 37 A0 A 36 A1 45 35 A A 34 A A 33 A 44 32 A CY7C1357B 31 BYTE B VDDQ VSS NC NC DQB DQB VSS VDDQ DQB DQB Vss/DNU VDD NC VSS DQB DQB VDDQ VSS DQB DQB DQPB NC VSS VDDQ NC NC NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 MODE NC NC NC 99 100 A 100-lead TQFP A NC NC VDDQ VSS NC DQPA DQA DQA VSS VDDQ DQA DQA VSS NC VDD ZZ BYTE A DQA DQA VDDQ VSS DQA DQA NC NC VSS VDDQ NC NC NC Page 4 of 33 CY7C1355B CY7C1357B Pin Configurations (continued) 119-ball BGA (3 Chip Enables with JTAG) 1 CY7C1355B (256K x 36) 3 4 5 A NC / 18M A A VDDQ 2 A B C NC NC CE2 A A A ADV/LD VDD A A CE3 A NC NC D E DQC DQC DQPC DQC VSS VSS NC CE1 VSS VSS DQPB DQB DQB DQB F VDDQ DQC VSS VSS DQB VDDQ G H J K DQC DQC VDDQ DQD DQC DQC VDD DQD BWC VSS NC VSS BWB VSS NC VSS DQB DQB VDD DQA DQB DQB VDDQ DQA BWA VSS DQA DQA DQA VDDQ VSS DQA DQA OE A WE VDD CLK NC 6 A 7 VDDQ L DQD DQD M VDDQ DQD BWD VSS N DQD DQD VSS CEN A1 P DQD DQPD VSS A0 VSS DQPA DQA R NC A MODE VDD NC A NC T U NC VDDQ NC / 72M TMS A TDI A TCK A TDO NC / 36M NC ZZ VDDQ 3 4 5 6 7 A NC / 18M A A VDDQ ADV/LD VDD A CE3 A NC A CY7C1357B (512K x 18) 1 2 A VDDQ A B NC CE2 A C NC A A D DQB NC VSS NC VSS DQPA NC E NC DQB VSS CE1 VSS NC DQA OE A VSS DQA VDDQ NC DQA VDD DQA NC VDDQ NC F VDDQ NC VSS G H J NC DQB VDDQ DQB NC VDD BWB VSS NC WE VDD VSS VSS NC K NC DQB VSS CLK VSS NC DQA L M DQB VDDQ NC DQB VSS VSS NC BWA VSS DQA NC NC VDDQ N DQB NC VSS CEN A1 VSS DQA NC P NC DQPB VSS A0 VSS NC DQA R T U NC NC / 72M VDDQ A A TMS MODE A TDI VDD NC / 36M TCK NC A TDO A A NC NC ZZ VDDQ Document #: 38-05117 Rev. *B Page 5 of 33 CY7C1355B CY7C1357B Pin Configurations (continued) 165-ball fBGA (3 Chip enable with JTAG) CY7C1355B (256K x 36) 1 2 3 4 5 6 7 8 9 10 11 A B C D E F G H J K L M N P NC / 288M A CE1 BWC BWB CE3 CEN ADV/LD A A NC R NC A CE2 BWD BWA CLK WE OE NC / 18M A NC / 144M DQPC DQC NC DQC VDDQ VSS VSS VSS VSS VSS VSS VSS VDD VDDQ VDDQ VSS VDD VDDQ NC DQB DQPB DQB DQC DQC VDDQ VDD VSS VSS VSS VDD VDDQ DQB DQB DQC DQC NC DQD DQC VDDQ VDD VSS VSS VSS VDD DQB DQB DQC VDD DQD VDDQ NC VDDQ VDD VDD VDD VSS VSS VSS VSS VSS VSS VSS VSS VSS VDD VDD VDD VDDQ VDDQ NC VDDQ DQB NC DQA DQB ZZ DQA DQD DQD VDDQ VDD VSS VSS VSS VDD VDDQ DQA DQA DQD DQD VDDQ VDD VSS VSS VSS VDD VDDQ DQA DQA DQD DQPD DQD NC VDDQ VDDQ VDD VSS VSS NC VSS VDD VSS VDDQ VDDQ DQA NC DQA DQPA NC NC / 72M A A TDI NC A1 VSS NC TDO A A A NC MODE NC / 36M A A TMS A0 TCK A A A A CY7C1357B (512K x 18) 2 3 4 5 6 7 8 9 10 11 A B C D E F G H J K L M N P NC / 288M 1 A CE1 BWB NC CE3 CEN ADV/LD A A A NC A CE2 NC BWA CLK WE OE NC / 18M A NC / 144M NC NC NC DQB VDDQ VSS VDD VSS VSS VSS VSS VSS VSS VSS VDD VDDQ VDDQ VDDQ NC NC DQPA DQA NC DQB VDDQ VDD VSS VSS VSS VDD VDDQ NC DQA NC DQB VDDQ VDD VSS VSS VSS VDD VDDQ NC DQA NC NC DQB DQB VDD NC VDDQ NC VDDQ VDD VDD VDD VSS VSS VSS VSS VSS VSS VSS VSS VSS VDD VDD VDD VDDQ NC VDDQ NC NC DQA DQA ZZ NC DQB NC VDDQ VDD VSS VSS VSS VDD VDDQ DQA NC DQB NC VDDQ VDD VSS VSS VSS VDD VDDQ DQA NC DQB DQPB NC NC VDDQ VDDQ VDD VSS VSS NC VSS NC NC / 72M A A R MODE NC / 36M A A Document #: 38-05117 Rev. *B VSS NC VDD VSS VDDQ VDDQ DQA NC NC NC TDI NC A1 TDO A A A NC TMS A0 TCK A A A A Page 6 of 33 CY7C1355B CY7C1357B CY7C1355B–Pin Definitions Name TQFP BGA fBGA I/O A0, A1, A 37,36,32,33, 34,35,44,45, 46,47,48,49, 50,81,82,83, 99,100 P4,N4,A2, C2,R2,A3, B3,C3,T3, G4,T4,A5, B5,C5,T5, A6,C6,R6 R6,P6,A2, A9,A10,B2, B10,P3,P4, P8,P9,P10, R3,R4,R8, R9,R10,R11 InputSynchronous Address Inputs used to select one of the 256K address locations. Sampled at the rising edge of the CLK. A[1:0] are fed to the two-bit burst counter. BWA, BWB 93,94,95,96 L5,G5,G3, L3 B5,A5,A4, B4 InputSynchronous Byte Write Inputs, active LOW. Qualified with WE to conduct Writes to the SRAM. Sampled on the rising edge of CLK. BWC, BWD Description WE 88 H4 B7 InputSynchronous Write Enable Input, active LOW. Sampled on the rising edge of CLK if CEN is active LOW. This signal must be asserted LOW to initiate a write sequence. ADV/LD 85 B4 A8 InputSynchronous Advance/Load Input. Used to advance the on-chip address counter or load a new address. When HIGH (and CEN is asserted LOW) the internal burst counter is advanced. When LOW, a new address can be loaded into the device for an access. After being deselected, ADV/LD should be driven LOW in order to load a new address. CLK 89 K4 B6 InputClock Clock Input. Used to capture all synchronous inputs to the device. CLK is qualified with CEN. CLK is only recognized if CEN is active LOW. 98 E4 A3 InputSynchronous Chip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE2, and CE3 to select/deselect the device. CE2 97 B2 B3 InputSynchronous Chip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction with CE1 and CE3 to select/deselect the device. CE3 92 B6 A6 InputSynchronous Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE1 and CE2 to select/deselect the device. OE 86 F4 B8 InputOutput Enable, asynchronous input, active LOW. Asynchronous Combined with the synchronous logic block inside the device to control the direction of the I/O pins. When LOW, the I/O pins are allowed to behave as outputs. When deasserted HIGH, I/O pins are three-stated, and act as input data pins. OE is masked during the data portion of a write sequence, during the first clock when emerging from a deselected state, when the device has been deselected. 87 M4 A7 InputSynchronous 64 T7 H11 InputZZ “Sleep” Input. This active HIGH input places the deAsynchronous vice in a non-time critical “sleep” condition with data integrity preserved. During normal operation, this pin can be connected to VSS or left floating. CE1 CEN ZZ Document #: 38-05117 Rev. *B Clock Enable Input, active LOW. When asserted LOW the Clock signal is recognized by the SRAM. When deasserted HIGH the Clock signal is masked. Since deasserting CEN does not deselect the device, CEN can be used to extend the previous cycle when required. Page 7 of 33 CY7C1355B CY7C1357B CY7C1355B–Pin Definitions (continued) Name DQs DQP[A:D] MODE TQFP 52,53,56,57, 58,59,62,63, 68,69,72,73, 74,75,78,79, 2,3,6,7,8,9, 12,13,18,19, 22,23,24,25, 28,29 BGA fBGA K6,L6,M6, M11,L11, K11,J11, N6,K7,L7, N7,P7,E6, J10,K10, F6,G6,H6, L10,M10, D7,E7,G7, D10,E10, H7,D1,E1, F10,G10, G1,H1,E2, D11,E11, F2,G2,H2, F11,G11, K1,L1,N1, D1,E1,F1, P1,K2,L2, G1,D2,E2, F2,G2,J1, M2,N2 K1,L1,M1, J2,K2,L2 M2, 51,80,1,30 P6,D6,D2, N11,C11,C1, P2 N1 31 R3 R1 VDD 15,41,65,91 J2,C4,J4, R4,J6 D4,D8,E4, E8,F4,F8, G4,G8,H2, H4,H8,J4, J8,K4,K8, L4,L8,M4, M8 VDDQ 4,11,20,27, A1,F1,J1, 54,61,70,77 M1,U1, A7,F7,J7, M7,U7 C3,C9,D3, D9,E3,E9, F3,F9,G3, G9,J3,J9, K3,K9,L3, L9,M3,M9, N3,N9 VSS 5,10,17,21, D3,E3,F3, C4,C5,C6, 26,40,55,60, H3,K3, C7,C8,D5, D6,D7,E5, 67,71,76,90 M3,N3, P3,D5,E5, E6,E7,F5, F5,H5,K5, F6,F7,G5, M5,N5,P5 G6,G7,H5, H6,H7,J5, J6,J7,K5,K6, K7,L5,L6,L7, M5,M6,M7, N4,N8 TDO - U5 P7 TDI - U3 P5 Document #: 38-05117 Rev. *B I/O Description I/OSynchronous Bidirectional Data I/O lines. As inputs, they feed into an on-chip data register that is triggered by the rising edge of CLK. As outputs, they deliver the data contained in the memory location specified by the addresses presented during the previous clock rise of the Read cycle. The direction of the pins is controlled by OE. When OE is asserted LOW, the pins behave as outputs. When HIGH, DQs and DQP[A:D] are placed in a three-state condition.The outputs are automatically three-stated during the data portion of a Write sequence, during the first clock when emerging from a deselected state, and when the device is deselected, regardless of the state of OE. I/OSynchronous Bidirectional Data Parity I/O Lines. Functionally, these signals are identical to DQs. During Write sequences, DQP[A:D] is controlled by BW[A:D] correspondingly. Input Strap Pin Mode Input. Selects the burst order of the device. When tied to Gnd selects linear burst sequence. When tied to VDD or left floating selects interleaved burst sequence. Power Supply Power supply inputs to the core of the device. I/O Power Supply Ground JTAG serial output Synchronous JTAG serial input Synchronous Power supply for the I/O circuitry. Ground for the device. Serial data-out to the JTAG circuit. Delivers data on the negative edge of TCK. If the JTAG feature is not being utilized, this pin should be left unconnected. This pin is not available on TQFP packages. Serial data-In to the JTAG circuit. Sampled on the rising edge of TCK. If the JTAG feature is not being utilized, this pin can be left floating or connected to VDD through a pull up resistor. This pin is not available on TQFP packages. Page 8 of 33 CY7C1355B CY7C1357B CY7C1355B–Pin Definitions (continued) Name TQFP BGA fBGA I/O Description TMS - U2 R5 JTAG serial input Synchronous Serial data-In to the JTAG circuit. Sampled on the rising edge of TCK. If the JTAG feature is not being utilized, this pin can be disconnected or connected to VDD. This pin is not available on TQFP packages. TCK - U4 R7 JTAG-Clock Clock input to the JTAG circuitry. If the JTAG feature is not being utilized, this pin must be connected to VSS. This pin is not available on TQFP packages. - No Connects. Not internally connected to the die. 18M,36M, 72M, 144M and 288M are address expansion pins and are not internally connected to the die. NC VSS/DNU 16,38,39,42, B1,C1,R1, A1,A11,B1, 43,66,84 T1,T2,J3, B9,B11,C2, A4,D4,L4, C10,H1,H3, J5,R5,T6, H9,H10,N2, U6,B7,C7, N5,N6,N7, R7 N10,P1,P2, P11,R2 14 - - Ground/DNU This pin can be connected to Ground or should be left floating. CY7C1357B–Pin Definitions Name TQFP BGA fBGA I/O Description A0, A1, A 37,36,32,33, 34,35,44,45, 46,47,48,49, 50,80,81,82, 83,99,100 P4,N4,A2, C2,R2,T2, A3,B3,C3, T3,A5,B5, C5,T5,A6, C6,R6,T6 R6,P6,A2, A9,A10,A11, B2,B10,P3, P4,P8,P9, P10,R3,R4, R8,R9,R10, R11 InputSynchronous Address Inputs used to select one of the 512K address locations. Sampled at the rising edge of the CLK. A[1:0] are fed to the two-bit burst counter. BWA,BWB 93,94 G3,L5 B5,A4 InputSynchronous Byte Write Select Inputs, active LOW. Qualified with WE to conduct Writes to the SRAM. Sampled on the rising edge of CLK. WE 88 H4 B7 InputSynchronous Write Enable Input, active LOW. Sampled on the rising edge of CLK if CEN is active LOW. This signal must be asserted LOW to initiate a Write sequence. ADV/LD 85 B4 A8 InputSynchronous Advance/Load Input. Used to advance the on-chip address counter or load a new address. When HIGH (and CEN is asserted LOW) the internal burst counter is advanced. When LOW, a new address can be loaded into the device for an access. After being deselected, ADV/LD should be driven LOW in order to load a new address. CLK 89 K4 B6 InputClock Clock Input. Used to capture all synchronous inputs to the device. CLK is qualified with CEN. CLK is only recognized if CEN is active LOW. 98 E4 A3 InputSynchronous Chip Enable 1 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE2, and CE3 to select/deselect the device. CE2 97 B2 B3 InputSynchronous Chip Enable 2 Input, active HIGH. Sampled on the rising edge of CLK. Used in conjunction with CE1 and CE3 to select/deselect the device. CE3 92 B6 A6 InputSynchronous Chip Enable 3 Input, active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE1 and CE2 to select/deselect the device. CE1 Document #: 38-05117 Rev. *B Page 9 of 33 CY7C1355B CY7C1357B CY7C1357B–Pin Definitions (continued) Name TQFP BGA fBGA OE 86 F4 B8 InputOutput Enable, asynchronous input, active LOW. Asynchronous Combined with the synchronous logic block inside the device to control the direction of the I/O pins. When LOW, the I/O pins are allowed to behave as outputs. When deasserted HIGH, I/O pins are three-stated, and act as input data pins. OE is masked during the data portion of a write sequence, during the first clock when emerging from a deselected state, when the device has been deselected. CEN 87 M4 A7 InputSynchronous ZZ 64 T7 H11 InputZZ “Sleep” Input, active HIGH. When asserted HIGH Asynchronous places the device in a non-time-critical “sleep” condition with data integrity preserved. For normal operation, this pin has to be LOW or left floating. ZZ pin has an internal pull-down. DQs DQP[A:B] MODE 58,59,62,63, 68,69,72,73, 8,9,12,13, 18,19,22,23 P7,K7,G7, J10,K10, E7,F6,H6, L10,M10, L6,N6,D1, D11,E11, H1,L1,N1, F11,G11,J1, E2,G2,K2, K1,L1,M1, M2 D2,E2,F2, G2 74,24 D6,P2 C11,N1 31 R3 R1 VDD 15,41,65,91 C4,J2,J4, J6,R4 D4,D8,E4, E8,F4,F8, G4,G8,H2, H4,H8,J4, J8,K4,K8, L4,L8,M4, M8 VDDQ 4,11,20,27, A1,A7,F1, 54,61,70,77 F7,J1,J7, M1,M7,U1 ,U7 C3,C9,D3, D9,E3,E9, F3,F9,G3, G9,J3,J9, K3,K9,L3, L9,M3,M9, N3,N9 Document #: 38-05117 Rev. *B I/O Description Clock Enable Input, active LOW. When asserted LOW the Clock signal is recognized by the SRAM. When deasserted HIGH the Clock signal is masked. Since deasserting CEN does not deselect the device, CEN can be used to extend the previous cycle when required. I/OSynchronous Bidirectional Data I/O lines. As inputs, they feed into an on-chip data register that is triggered by the rising edge of CLK. As outputs, they deliver the data contained in the memory location specified by the addresses presented during the previous clock rise of the Read cycle. The direction of the pins is controlled by OE. When OE is asserted LOW, the pins behave as outputs. When HIGH, DQs and DQP[A:B] are placed in a three-state condition.The outputs are automatically three-stated during the data portion of a Write sequence, during the first clock when emerging from a deselected state, and when the device is deselected, regardless of the state of OE. I/OSynchronous Bidirectional Data Parity I/O Lines. Functionally, these signals are identical to DQs. During Write sequences, DQP[A:B] is controlled by BW[A:B] correspondingly. Input Strap Pin Mode Input. Selects the burst order of the device. When tied to Gnd selects linear burst sequence. When tied to VDD or left floating selects interleaved burst sequence. Power Supply Power supply inputs to the core of the device. I/O Power Supply Power supply for the I/O circuitry. Page 10 of 33 CY7C1355B CY7C1357B CY7C1357B–Pin Definitions (continued) Name VSS TQFP BGA fBGA 5,10,17,21, D3,D5,E3, C4,C5,C6, 26,40,55,60, E5,F3,F5, C7,C8,D5, D6,D7,E5, 67,71,76,90 G5,H3, H5,K3,K5, E6,E7,F5, F6,F7,G5, L3,M3, G6,G7,H5, M5,N3, N5,P3,P5 H6,H7,J5, J6,J7,K5,K6, K7,L5,L6,L7, M5,M6,M7, N4,N8 I/O Ground Ground for the device. TDO - U5 P7 TDI - U3 P5 JTAG serial input Synchronous Serial data-In to the JTAG circuit. Sampled on the rising edge of TCK. If the JTAG feature is not being utilized, this pin can be left floating or connected to VDD through a pull up resistor. This pin is not available on TQFP packages. TMS - U2 R5 JTAG serial input Synchronous Serial data-In to the JTAG circuit. Sampled on the rising edge of TCK. If the JTAG feature is not being utilized, this pin can be disconnected or connected to VDD. This pin is not available on TQFP packages. TCK - U4 R7 JTAG-Clock Clock input to the JTAG circuitry. If the JTAG feature is not being utilized, this pin must be connected to VSS. This pin is not available on TQFP packages. NC 1,2,3,6,7,16, 25,28,29,30, 38,39,42,43, 51,52,53,56, 57,66,75,78, 79,84,95,96 A4,B1,B7, C1,C7,D2, D4,D7,E1, E6,H2,F2, G1,G6, H7,J3,J5, K1,K6,L4, L2,L7,M6, N2,N7,L7, P1,P6,R1, R5,R7,T1, T4,U6 A1,A5,B1, B4,B9,B11, C1,C2,C10, D1,D10,E1, E10,F1,F10, G1,G10,H1, H3,H9,H10, J2,J11,K2, K11,L2,L11, M2,M11,N2, N5,N6,N7, N10,N11,P1, P2,P11,R2 - No Connects. Not internally connected to the die. 18M,36M, 72M, 144M and 288M are address expansion pins and are not internally connected to the die. 14 - - Ground/DNU VSS/DNU Document #: 38-05117 Rev. *B JTAG serial output Synchronous Description Serial data-out to the JTAG circuit. Delivers data on the negative edge of TCK. If the JTAG feature is not being utilized, this pin should be left unconnected. This pin is not available on TQFP packages. This pin can be connected to Ground or should be left floating. Page 11 of 33 CY7C1355B CY7C1357B Functional Overview The CY7C1355B/CY7C1357B is a synchronous flow-through burst SRAM designed specifically to eliminate wait states during Write-Read transitions. All synchronous inputs pass through input registers controlled by the rising edge of the clock. The clock signal is qualified with the Clock Enable input signal (CEN). If CEN is HIGH, the clock signal is not recognized and all internal states are maintained. All synchronous operations are qualified with CEN. Maximum access delay from the clock rise (tCDV) is 6.5 ns (133-MHz device). Accesses can be initiated by asserting all three Chip Enables (CE1, CE2, CE3) active at the rising edge of the clock. If Clock Enable (CEN) is active LOW and ADV/LD is asserted LOW, the address presented to the device will be latched. The access can either be a Read or Write operation, depending on the status of the Write Enable (WE). BWX can be used to conduct Byte Write operations. Write operations are qualified by the Write Enable (WE). All writes are simplified with on-chip synchronous self-timed Write circuitry. Three synchronous Chip Enables (CE1, CE2, CE3) and an asynchronous Output Enable (OE) simplify depth expansion. All operations (Reads, Writes, and Deselects) are pipelined. ADV/LD should be driven LOW once the device has been deselected in order to load a new address for the next operation. Single Read Accesses A read access is initiated when the following conditions are satisfied at clock rise: (1) CEN is asserted LOW, (2) CE1, CE2, and CE3 are ALL asserted active, (3) the Write Enable input signal WE is deasserted HIGH, and 4) ADV/LD is asserted LOW. The address presented to the address inputs is latched into the address register and presented to the memory array and control logic. The control logic determines that a read access is in progress and allows the requested data to propagate to the output buffers. The data is available within 6.5 ns (133-MHz device) provided OE is active LOW. After the first clock of the read access, the output buffers are controlled by OE and the internal control logic. OE must be driven LOW in order for the device to drive out the requested data. On the subsequent clock, another operation (Read/Write/Deselect) can be initiated. When the SRAM is deselected at clock rise by one of the chip enable signals, its output will be three-stated immediately. Burst Read Accesses The CY7C1355B/CY7C1357B has an on-chip burst counter that allows the user the ability to supply a single address and conduct up to four Reads without reasserting the address inputs. ADV/LD must be driven LOW in order to load a new address into the SRAM, as described in the Single Read Access section above. The sequence of the burst counter is determined by the MODE input signal. A LOW input on MODE Document #: 38-05117 Rev. *B selects a linear burst mode, a HIGH selects an interleaved burst sequence. Both burst counters use A0 and A1 in the burst sequence, and will wrap around when incremented sufficiently. A HIGH input on ADV/LD will increment the internal burst counter regardless of the state of chip enable inputs or WE. WE is latched at the beginning of a burst cycle. Therefore, the type of access (Read or Write) is maintained throughout the burst sequence. Single Write Accesses Write access are initiated when the following conditions are satisfied at clock rise: (1) CEN is asserted LOW, (2) CE1, CE2, and CE3 are ALL asserted active, and (3) the Write signal WE is asserted LOW. The address presented to the address bus is loaded into the address register. The write signals are latched into the Control Logic block. The data lines are automatically three-stated regardless of the state of the OE input signal. This allows the external logic to present the data on DQs and DQPX. On the next clock rise the data presented to DQs and DQPX (or a subset for byte write operations, see Truth Table for details) inputs is latched into the device and the write is complete. Additional accesses (Read/Write/Deselect) can be initiated on this cycle. The data written during the Write operation is controlled by BWX signals. The CY7C1355B/CY7C1357B provides byte write capability that is described in the Truth Table. Asserting the Write Enable input (WE) with the selected Byte Write Select input will selectively write to only the desired bytes. Bytes not selected during a byte write operation will remain unaltered. A synchronous self-timed Write mechanism has been provided to simplify the Write operations. Byte Write capability has been included in order to greatly simplify Read/Modify/Write sequences, which can be reduced to simple Byte Write operations. Because the CY7C1355B/CY7C1357B is a common I/O device, data should not be driven into the device while the outputs are active. The Output Enable (OE) can be deasserted HIGH before presenting data to the DQs and DQPX inputs. Doing so will three-state the output drivers. As a safety precaution, DQs and DQPX are automatically three-stated during the data portion of a write cycle, regardless of the state of OE. Burst Write Accesses The CY7C1355B/CY7C1357B has an on-chip burst counter that allows the user the ability to supply a single address and conduct up to four Write operations without reasserting the address inputs. ADV/LD must be driven LOW in order to load the initial address, as described in the Single Write Access section above. When ADV/LD is driven HIGH on the subsequent clock rise, the Chip Enables (CE1, CE2, and CE3) and WE inputs are ignored and the burst counter is incremented. The correct BWX inputs must be driven in each cycle of the burst write, in order to write the correct bytes of data. Page 12 of 33 CY7C1355B CY7C1357B Interleaved Burst Address Table (MODE = Floating or VDD) . Linear Burst Address Table (MODE = GND) First Address A1: A0 Second Address A1: A0 Third Address A1: A0 Fourth Address A1: A0 00 01 10 01 00 10 11 11 10 01 11 First Address A1: A0 Second Address A1: A0 Third Address A1: A0 Fourth Address A1: A0 11 10 00 01 10 11 00 01 01 10 11 00 00 10 11 00 01 11 00 01 10 Sleep Mode The ZZ input pin is an asynchronous input. Asserting ZZ places the SRAM in a power conservation “sleep” mode. Two clock cycles are required to enter into or exit from this “sleep” mode. While in this mode, data integrity is guaranteed. Accesses pending when entering the “sleep” mode are not considered valid nor is the completion of the operation guaranteed. The device must be deselected prior to entering the “sleep” mode. CE1, CE2, and CE3, must remain inactive for the duration of tZZREC after the ZZ input returns LOW. ZZ Mode Electrical Characteristics . Parameter Description Test Conditions Min. Max. Unit IDDZZ Snooze mode standby current ZZ > VDD – 0.2V 35 mA tZZS Device operation to ZZ ZZ > VDD – 0.2V 2tCYC ns tZZREC ZZ recovery time ZZ < 0.2V tZZI ZZ active to snooze current This parameter is sampled tRZZI ZZ Inactive to exit snooze current This parameter is sampled Document #: 38-05117 Rev. *B 2tCYC ns 2tCYC 0 ns ns Page 13 of 33 CY7C1355B CY7C1357B Truth Table[2, 3, 4, 5, 6, 7, 8] Operation Deselect Cycle Address Used CE1 CE2 CE3 ZZ None H X X L ADV/LD L WE X BWX X OE X DQ CEN CLK L L->H Three-State Deselect Cycle None X X H L L X X X L L->H Three-State Deselect Cycle None X L X L L X X X L L->H Three-State Continue Deselect Cycle None X X X L H X X X L L->H Three-State External L H L L L H X L L L->H Data Out (Q) Next X X X L H X X L L L->H Data Out (Q) External L H L L L H X H L L->H Three-State Next X X X L H X X H L L->H Three-State External L H L L L L L X L L->H Data In (D) WRITE Cycle (Continue Burst) Next X X X L H X L X L L->H Data In (D) NOP/WRITE ABORT (Begin Burst) None L H L L L L H X L L->H Three-State WRITE ABORT (Continue Burst) Next X X X L H X H X L L->H Three-State IGNORE CLOCK EDGE (Stall) Current X X X L X X X X H L->H - SNOOZE MODE None X X X H X X X X X X Three-State READ Cycle (Begin Burst) READ Cycle (Continue Burst) NOP/DUMMY READ (Begin Burst) DUMMY READ (Continue Burst) WRITE Cycle (Begin Burst) Notes: 2. X = “Don't Care.” H = Logic HIGH, L = Logic LOW. BWx = 0 signifies at least one Byte Write Select is active, BWx = Valid signifies that the desired Byte Write Selects are asserted, see Truth Table for details. 3. Write is defined by BWX, and WE. See Truth Table for Read/Write. 4. When a Write cycle is detected, all I/Os are three-stated, even during Byte Writes. 5. The DQs and DQPX pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock. 6. CEN = H, inserts wait states. 7. Device will power-up deselected and the I/Os in a three-state condition, regardless of OE. 8. OE is asynchronous and is not sampled with the clock rise. It is masked internally during Write cycles. During a Read cycle DQs and DQPX = Three-state when OE is inactive or when the device is deselected, and DQs and DQPX = data when OE is active. 9. Table only lists a partial listing of the byte write combinations. Any combination of BW[A:D] is valid. Appropriate write will be done based on which byte write is active. Document #: 38-05117 Rev. *B Page 14 of 33 CY7C1355B CY7C1357B Partial Truth Table for Read/Write[2, 3, 9] Function (CY7C1355B) WE H BWA X BWB X BWC X BWD X Write No bytes written L H H H H Write Byte A – (DQA and DQPA) Write Byte B – (DQB and DQPB) L L H H H L H L H H Write Byte C – (DQC and DQPC) L H H L H Write Byte D – (DQD and DQPD) L H H H L Write All Bytes L L L L L Read Truth Table for Read/Write[2, 3] Function (CY7C1357B) Read WE H BWA X BWB X Write - No bytes written L H H Write Byte A – (DQA and DQPA) Write Byte B – (DQB and DQPB) L H H L H H Write All Bytes L L L Document #: 38-05117 Rev. *B Page 15 of 33 CY7C1355B CY7C1357B IEEE 1149.1 Serial Boundary Scan (JTAG) Test MODE SELECT (TMS) The CY7C1355B/CY7C1357B incorporates a serial boundary scan test access port (TAP). This port operates in accordance with IEEE Standard 1149.1-1990 but does not have the set of functions required for full 1149.1 compliance. These functions from the IEEE specification are excluded because their inclusion places an added delay in the critical speed path of the SRAM. Note that the TAP controller functions in a manner that does not conflict with the operation of other devices using 1149.1 fully compliant TAPs. The TAP operates using JEDEC-standard 3.3V or 2.5V I/O logic levels. The CY7C1355B/CY7C1357B contains a TAP controller, instruction register, boundary scan register, bypass register, and ID register. Disabling the JTAG Feature It is possible to operate the SRAM without using the JTAG feature. To disable the TAP controller, TCK must be tied LOW(VSS) to prevent clocking of the device. TDI and TMS are internally pulled up and may be unconnected. They may alternately be connected to VDD through a pull-up resistor. TDO should be left unconnected. Upon power-up, the device will come up in a reset state which will not interfere with the operation of the device. The TMS input is used to give commands to the TAP controller and is sampled on the rising edge of TCK. It is allowable to leave this ball unconnected if the TAP is not used. The ball is pulled up internally, resulting in a logic HIGH level. Test Data-In (TDI) The TDI ball is used to serially input information into the registers and can be connected to the input of any of the registers. The register between TDI and TDO is chosen by the instruction that is loaded into the TAP instruction register. For information on loading the instruction register, see Figure . TDI is internally pulled up and can be unconnected if the TAP is unused in an application. TDI is connected to the most significant bit (MSB) of any register. (See Tap Controller Block Diagram.) Test Data-Out (TDO) The TDO output ball is used to serially clock data-out from the registers. The output is active depending upon the current state of the TAP state machine. The output changes on the falling edge of TCK. TDO is connected to the least significant bit (LSB) of any register. (See Tap Controller State Diagram.) TAP Controller Block Diagram TAP Controller State Diagram 1 0 Bypass Register TEST-LOGIC RESET 2 1 0 0 0 RUN-TEST/ IDLE 1 SELECT DR-SCAN 1 SELECT IR-SCAN 0 1 1 CAPTURE-DR 0 TDO x . . . . . 2 1 0 SHIFT-IR 0 Boundary Scan Register 1 EXIT1-DR 1 EXIT1-IR 0 1 TCK 0 PAUSE-DR 0 PAUSE-IR 1 0 TMS TAP CONTROLLER 1 EXIT2-DR 0 EXIT2-IR 1 Performing a TAP Reset 1 UPDATE-DR 0 UPDATE-IR 1 0 The 0/1 next to each state represents the value of TMS at the rising edge of TCK. Test Access Port (TAP) Test Clock (TCK) The test clock is used only with the TAP controller. All inputs are captured on the rising edge of TCK. All outputs are driven from the falling edge of TCK. Document #: 38-05117 Rev. *B Selection Circuitry Identification Register CAPTURE-IR 1 Instruction Register 31 30 29 . . . 2 1 0 0 SHIFT-DR 1 TDI Selection Circuitry 0 0 0 1 A RESET is performed by forcing TMS HIGH (VDD) for five rising edges of TCK. This RESET does not affect the operation of the SRAM and may be performed while the SRAM is operating. At power-up, the TAP is reset internally to ensure that TDO comes up in a High-Z state. TAP Registers Registers are connected between the TDI and TDO balls and allow data to be scanned into and out of the SRAM test circuitry. Only one register can be selected at a time through the instruction register. Data is serially loaded into the TDI ball on the rising edge of TCK. Data is output on the TDO ball on the falling edge of TCK. Page 16 of 33 CY7C1355B CY7C1357B Instruction Register Three-bit instructions can be serially loaded into the instruction register. This register is loaded when it is placed between the TDI and TDO balls as shown in the Tap Controller Block Diagram. Upon power-up, the instruction register is loaded with the IDCODE instruction. It is also loaded with the IDCODE instruction if the controller is placed in a reset state as described in the previous section. When the TAP controller is in the Capture-IR state, the two least significant bits are loaded with a binary “01” pattern to allow for fault isolation of the board-level serial test data path. Bypass Register Instructions are loaded into the TAP controller during the Shift-IR state when the instruction register is placed between TDI and TDO. During this state, instructions are shifted through the instruction register through the TDI and TDO balls. To execute the instruction once it is shifted in, the TAP controller needs to be moved into the Update-IR state. EXTEST EXTEST is a mandatory 1149.1 instruction which is to be executed whenever the instruction register is loaded with all 0s. EXTEST is not implemented in this SRAM TAP controller, and therefore this device is not compliant to 1149.1. The TAP controller does recognize an all-0 instruction. To save time when serially shifting data through registers, it is sometimes advantageous to skip certain chips. The bypass register is a single-bit register that can be placed between the TDI and TDO balls. This allows data to be shifted through the SRAM with minimal delay. The bypass register is set LOW (VSS) when the BYPASS instruction is executed. When an EXTEST instruction is loaded into the instruction register, the SRAM responds as if a SAMPLE/PRELOAD instruction has been loaded. There is one difference between the two instructions. Unlike the SAMPLE/PRELOAD instruction, EXTEST places the SRAM outputs in a High-Z state. Boundary Scan Register IDCODE The boundary scan register is connected to all the input and bidirectional balls on the SRAM. The SRAM has a 71-bit-long register. The boundary scan register is loaded with the contents of the RAM I/O ring when the TAP controller is in the Capture-DR state and is then placed between the TDI and TDO balls when the controller is moved to the Shift-DR state. The EXTEST, SAMPLE/PRELOAD and SAMPLE Z instructions can be used to capture the contents of the I/O ring. The Boundary Scan Order tables show the order in which the bits are connected. Each bit corresponds to one of the bumps on the SRAM package. The MSB of the register is connected to TDI, and the LSB is connected to TDO. Identification (ID) Register The IDCODE instruction causes a vendor-specific, 32-bit code to be loaded into the instruction register. It also places the instruction register between the TDI and TDO balls and allows the IDCODE to be shifted out of the device when the TAP controller enters the Shift-DR state. The IDCODE instruction is loaded into the instruction register upon power-up or whenever the TAP controller is given a test logic reset state. SAMPLE Z The SAMPLE Z instruction causes the boundary scan register to be connected between the TDI and TDO balls when the TAP controller is in a Shift-DR state. It also places all SRAM outputs into a High-Z state. SAMPLE/PRELOAD The ID register is loaded with a vendor-specific, 32-bit code during the Capture-DR state when the IDCODE command is loaded in the instruction register. The IDCODE is hardwired into the SRAM and can be shifted out when the TAP controller is in the Shift-DR state. The ID register has a vendor code and other information described in the Identification Register Definitions table. SAMPLE/PRELOAD is a 1149.1 mandatory instruction. The PRELOAD portion of this instruction is not implemented, so the device TAP controller is not fully 1149.1 compliant. TAP Instruction Set The user must be aware that the TAP controller clock can only operate at a frequency up to 10 MHz, while the SRAM clock operates more than an order of magnitude faster. Because there is a large difference in the clock frequencies, it is possible that during the Capture-DR state, an input or output will undergo a transition. The TAP may then try to capture a signal while in transition (metastable state). This will not harm the device, but there is no guarantee as to the value that will be captured. Repeatable results may not be possible. Overview Eight different instructions are possible with the three-bit instruction register. All combinations are listed in the Instruction Codes table. Three of these instructions are listed as RESERVED and should not be used. The other five instructions are described in detail below. The TAP controller used in this SRAM is not fully compliant to the 1149.1 convention because some of the mandatory 1149.1 instructions are not fully implemented. The TAP controller cannot be used to load address data or control signals into the SRAM and cannot preload the I/O buffers. The SRAM does not implement the 1149.1 commands EXTEST or INTEST or the PRELOAD portion of SAMPLE/PRELOAD; rather, it performs a capture of the I/O ring when these instructions are executed. Document #: 38-05117 Rev. *B When the SAMPLE/PRELOAD instruction is loaded into the instruction register and the TAP controller is in the Capture-DR state, a snapshot of data on the inputs and bidirectional balls is captured in the boundary scan register. To guarantee that the boundary scan register will capture the correct value of a signal, the SRAM signal must be stabilized long enough to meet the TAP controller’s capture set-up plus hold time (tCSplus tCH). The SRAM clock input might not be captured correctly if there is no way in a design to stop (or slow) the clock during a SAMPLE/PRELOAD instruction. If this is an issue, it is still Page 17 of 33 CY7C1355B CY7C1357B BYPASS possible to capture all other signals and simply ignore the value of the CLK captured in the boundary scan register. When the BYPASS instruction is loaded in the instruction register and the TAP is placed in a Shift-DR state, the bypass register is placed between the TDI and TDO balls. The advantage of the BYPASS instruction is that it shortens the boundary scan path when multiple devices are connected together on a board. Once the data is captured, it is possible to shift out the data by putting the TAP into the Shift-DR state. This places the boundary scan register between the TDI and TDO balls. Note that since the PRELOAD part of the command is not implemented, putting the TAP to the Update-DR state while performing a SAMPLE/PRELOAD instruction will have the same effect as the Pause-DR command. Reserved These instructions are not implemented but are reserved for future use. Do not use these instructions. TAP Timing 1 2 Test Clock (TCK) 3 t TH t TMSS t TMSH t TDIS t TDIH t TL 4 5 6 t CYC Test Mode Select (TMS) Test Data-In (TDI) t TDOV t TDOX Test Data-Out (TDO) DON’T CARE UNDEFINED TAP AC Switching Characteristics Over the operating Range[10, 11] Parameter Description Clock TCK Clock Cycle Time tTCYC tTF TCK Clock Frequency TCK Clock HIGH time tTH TCK Clock LOW time tTL Output Times TCK Clock LOW to TDO Valid tTDOV TCK Clock LOW to TDO Invalid tTDOX Set-up Times TMS Set-Up to TCK Clock Rise tTMSS TDI Set-Up to TCK Clock Rise tTDIS tCS Capture Set-Up to TCK Rise Hold Times TMS hold after TCK Clock Rise tTMSH tTDIH TDI Hold after Clock Rise Capture Hold after Clock Rise tCH Min. Max. 50 20 25 25 5 0 Unit ns MHz ns ns ns ns 5 5 5 ns ns 5 5 5 ns ns ns Notes: 10. tCS and tCH refer to the set-up and hold time requirements of latching data from the boundary scan register. 11. Test conditions are specified using the load in TAP AC Test Conditions. tR/tF = 1 ns. Document #: 38-05117 Rev. *B Page 18 of 33 CY7C1355B CY7C1357B 3.3V TAP AC Test Conditions 2.5V TAP AC Test Conditions Input pulse levels ........ ........................................VSS to 3.3V Input pulse levels........ ........................................VSS to 2.5V Input rise and fall times ..................... ..............................1 ns Input rise and fall time .....................................................1 ns Input timing reference levels ...........................................1.5V Input timing reference levels................... ......................1.25V Output reference levels...................................................1.5V Output reference levels .................. ..............................1.25V Test load termination supply voltage...............................1.5V Test load termination supply voltage .................... ........1.25V 3.3V TAP AC Output Load Equivalent 2.5V TAP AC Output Load Equivalent 1.5V 1.25V 50Ω 50Ω TDO TDO Z O= 50Ω Z O= 50Ω 20pF 20pF TAP DC Electrical Characteristics And Operating Conditions (0°C < TA < +70°C; VDD = 3.3V ±0.165V unless otherwise noted)[12] Parameter Description Conditions Min. Max. Unit VOH1 Output HIGH Voltage IOH = –4.0 mA VDDQ = 3.3V 2.4 V IOH = –1.0 mA VDDQ = 2.5V 2.0 V VOH2 Output HIGH Voltage IOH = –100 µA VDDQ = 3.3V 2.9 V VDDQ = 2.5V 2.1 VOL1 Output LOW Voltage IOL = 8.0 mA VDDQ = 3.3V 0.4 V IOL = 8.0 mA VDDQ = 2.5V 0.4 V VOL2 Output LOW Voltage IOL = 100 µA VDDQ = 3.3V 0.2 V VIH Input HIGH Voltage VIL Input LOW Voltage IX Input Load Current VDDQ = 2.5V 0.2 V 2.0 VDD + 0.3 V VDDQ = 2.5V 1.7 VDD + 0.3 V VDDQ = 3.3V –0.5 0.7 V VDDQ = 2.5V –0.3 0.7 V –5 5 µA VDDQ = 3.3V GND < VIN < VDDQ V Note: 12. All voltages referenced to VSS (GND). Document #: 38-05117 Rev. *B Page 19 of 33 CY7C1355B CY7C1357B Identification Register Definitions CY7C1355B (256KX36) CY7C1357B (512KX18) 001 001 Device Depth (28:24) 01010 01010 Device Width (23:18) 000000 000000 Defines memory type and architecture Cypress Device ID (17:12) 100110 010110 Defines width and density 00000110100 00000110100 1 1 Instruction Field Revision Number (31:29) Cypress JEDEC ID Code (11:1) ID Register Presence Indicator (0) Description Describes the version number Reserved for Internal Use Allows unique identification of SRAM vendor Indicates the presence of an ID register Scan Register Sizes Bit Size (x36) Bit Size (x18) Instruction 3 3 Bypass 1 1 Register Name ID 32 32 Boundary Scan Order 71 71 Identification Codes Instruction Code Description EXTEST 000 Captures I/O ring contents. Places the boundary scan register between TDI and TDO. Forces all SRAM outputs to High-Z state. This instruction is not 1149.1 compliant. IDCODE 001 Loads the ID register with the vendor ID code and places the register between TDI and TDO. This operation does not affect SRAM operations. SAMPLE Z 010 Captures I/O ring contents. Places the boundary scan register between TDI and TDO. Forces all SRAM output drivers to a High-Z state. RESERVED 011 Do Not Use: This instruction is reserved for future use. SAMPLE/PRELOAD 100 Captures I/O ring contents. Places the boundary scan register between TDI and TDO. Does not affect SRAM operation. This instruction does not implement 1149.1 preload function and is therefore not 1149.1 compliant. RESERVED 101 Do Not Use: This instruction is reserved for future use. RESERVED 110 Do Not Use: This instruction is reserved for future use. BYPASS 111 Places the bypass register between TDI and TDO. This operation does not affect SRAM operations. Document #: 38-05117 Rev. *B Page 20 of 33 CY7C1355B CY7C1357B 119-Ball BGA Boundary Scan Order CY7C1355B (256K x 36) CY7C1357B (512K x 18) BIT # BALL ID Signal Name BIT # BALL ID Signal Name BIT# BALL ID Signal Name BIT# BALL ID Signal Name 1 K4 CLK 37 R6 A 1 K4 CLK 37 R6 A 2 H4 WE 38 T5 A 2 H4 WE 38 T5 A 3 M4 CEN 39 T3 A 3 M4 CEN 39 T3 A 4 F4 OE 40 R2 A 4 F4 OE 40 R2 A 5 B4 ADV/LD 41 R3 MODE 5 B4 41 R3 MODE 6 G4 A 42 P2 DQPD 6 G4 A 42 Internal Internal 7 C3 A 43 P1 DQD 7 C3 A 43 Internal Internal 8 B3 A 44 L2 DQD 8 B3 A 44 Internal Internal 9 D6 DQPB 45 K1 DQD 9 T2 A 45 Internal Internal 10 H7 DQB 46 N2 DQD 10 Internal Internal 46 P2 DQPB 11 G6 DQB 47 N1 DQD 11 Internal Internal 47 N1 DQB 12 E6 DQB 48 M2 DQD 12 Internal Internal 48 M2 DQB 13 D7 DQB 49 L1 DQD 13 D6 DQPA 49 L1 DQB 14 E7 DQB 50 K2 DQD 14 E7 DQA 50 K2 DQB ADV/LD 15 F6 DQB 51 Internal Internal 15 F6 DQA 51 Internal Internal 16 G7 DQB 52 H1 DQC 16 G7 DQA 52 H1 DQB 17 H6 DQB 53 G2 DQC 17 H6 DQA 53 G2 DQB 18 T7 ZZ 54 E2 DQC 18 T7 ZZ 54 E2 DQB 19 K7 DQA 55 D1 DQC 19 K7 DQA 55 D1 DQB 20 L6 DQA 56 H2 DQC 20 L6 DQA 56 Internal Internal 21 N6 DQA 57 G1 DQC 21 N6 DQA 57 Internal Internal 22 P7 DQA 58 F2 DQC 22 P7 DQA 58 Internal Internal 23 N7 DQA 59 E1 DQC 23 Internal Internal 59 Internal Internal 24 M6 DQA 60 D2 DQPC 24 Internal Internal 60 Internal Internal 25 L7 DQA 61 C2 A 25 Internal Internal 61 C2 A 26 K6 DQA 62 A2 A 26 Internal Internal 62 A2 A 27 P6 DQPA 63 E4 CE1 27 Internal Internal 63 E4 CE1 28 T4 A 64 B2 CE2 28 T6 A 64 B2 CE2 29 A3 A 65 L3 BWD 29 A3 A 65 Internal Internal 30 C5 A 66 G3 BWC 30 C5 A 66 G3 BWB 31 B5 A 67 G5 BWB 31 B5 A 67 Internal Internal 32 A5 A 68 L5 BWA 32 A5 A 68 L5 BWA 33 C6 A 69 B6 CE3 33 C6 A 69 B6 CE3 34 A6 A 34 A6 A 35 P4 A0 35 P4 A0 36 N4 A1 36 N4 A1 Document #: 38-05117 Rev. *B Page 21 of 33 CY7C1355B CY7C1357B 165-Ball fBGA Boundary Scan Order CY7C1355B (256K x 36) CY7C1357B (512K x 18) BIT# BALL ID Signal Name BIT# BALL ID Signal Name BIT# BALL ID Signal Name BIT# BALL ID Signal Name 1 B6 CLK 37 R4 A 1 B6 CLK 37 R4 A 2 B7 WE 38 P4 A 2 B7 WE 38 P4 A 3 A7 CEN 39 R3 A 3 A7 CEN 39 R3 A 4 B8 OE 40 P3 A 4 B8 OE 40 P3 A 5 A8 ADV/LD 41 R1 MODE 5 A8 41 R1 MODE 6 A9 A 42 N1 DQPD 6 A9 A 42 Internal Internal 7 B10 A 43 L2 DQD 7 B10 A 43 Internal Internal 8 A10 A 44 K2 DQD 8 A10 A 44 Internal Internal 9 C11 DQPB 45 J2 DQD 9 A11 A 45 Internal Internal 10 E10 DQB 46 M2 DQD 10 Internal Internal 46 N1 DQPB 11 F10 DQB 47 M1 DQD 11 Internal Internal 47 M1 DQB 12 G10 DQB 48 L1 DQD 12 Internal Internal 48 L1 DQB 13 D10 DQB 49 K1 DQD 13 C11 DQPA 49 K1 DQB 14 D11 DQB 50 J1 DQD 14 D11 DQA 50 J1 DQB 15 E11 DQB 51 Internal Internal 15 E11 DQA 51 Internal Internal 16 F11 DQB 52 G2 DQC 16 F11 DQA 52 G2 DQB 17 G11 DQB 53 F2 DQC 17 G11 DQA 53 F2 DQB 18 H11 ZZ 54 E2 DQC 18 H11 ZZ 54 E2 DQB 19 J10 DQA 55 D2 DQC 19 J10 DQA 55 D2 DQB 20 K10 DQA 56 G1 DQC 20 K10 DQA 56 Internal Internal 21 L10 DQA 57 F1 DQC 21 L10 DQA 57 Internal Internal 22 M10 DQA 58 E1 DQC 22 M10 DQA 58 Internal Internal 23 J11 DQA 59 D1 DQC 23 Internal Internal 59 Internal Internal 24 K11 DQA 60 C1 DQPC 24 Internal Internal 60 Internal Internal 25 L11 DQA 61 B2 A 25 Internal Internal 61 B2 A 26 M11 DQA 62 A2 A 26 Internal Internal 62 A2 A 27 N11 DQPA 63 A3 CE1 27 Internal Internal 63 A3 CE1 28 R11 A 64 B3 CE2 28 R11 A 64 B3 CE2 29 R10 A 65 B4 BWD 29 R10 A 65 Internal Internal 30 P10 A 66 A4 BWC 30 P10 A 66 Internal Internal 31 R9 A 67 A5 BWB 31 R9 A 67 A4 BWB 32 P9 A 68 B5 BWA 32 P9 A 68 B5 BWA 33 R8 A 69 A6 CE3 33 R8 A 69 A6 CE3 34 P8 A 34 P8 A 35 R6 A0 35 R6 A0 36 P6 A1 36 P6 A1 Document #: 38-05117 Rev. *B ADV/LD Page 22 of 33 CY7C1355B CY7C1357B Maximum Ratings Current into Outputs (LOW)......................................... 20 mA (Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ................................. –65°C to +150°C Ambient Temperature with Power Applied............................................. –55°C to +125°C Supply Voltage on VDD Relative to GND........ –0.5V to +4.6V DC Voltage Applied to Outputs in Three-State ..................................... –0.5V to VDDQ + 0.5V DC Input Voltage....................................–0.5V to VDD + 0.5V Static Discharge Voltage........................................... >2001V (per MIL-STD-883, Method 3015) Latch-up Current..................................................... >200 mA Operating Range Ambient Range Temperature VDD VDDQ Commercial 0°C to +70°C 3.3V – 5%/+10% 2.5V – 5% to VDD Industrial -40°C to +85°C Electrical Characteristics Over the Operating Range[13, 14] Parameter Description VDD VDDQ Power Supply Voltage I/O Supply Voltage VOH Output HIGH Voltage VOL Output LOW Voltage VIH Input HIGH Voltage[13] VIL Input LOW Voltage[13] IX Input Load Test Conditions VDDQ = 3.3V VDDQ = 2.5V VDDQ = 3.3V, VDD = Min., IOH = –4.0 mA VDDQ = 2.5V, VDD = Min., IOH = –1.0 mA VDDQ = 3.3V, VDD = Min., IOL = 8.0 mA VDDQ = 2.5V, VDD = Min., IOL = 1.0 mA VDDQ = 3.3V VDDQ = 2.5V VDDQ = 3.3V VDDQ = 2.5V GND ≤ VI ≤ VDDQ Input Current of MODE Input = VSS Min. Max. Unit 3.135 3.135 2.375 2.4 2.0 3.6 VDD 2.625 V V 2.0 1.7 –0.3 –0.3 –5 5 Input = VSS µA µA –5 30 µA 5 µA -300 µA 7.5-ns cycle, 133 MHz 250 mA 8.8-ns cycle, 117 MHz 220 mA 10-ns cycle, 100 MHz 180 All speeds 40 mA All speeds 30 mA VDD = Max, Device Deselected, or All speeds Automatic CE Power-down VIN ≤ 0.3V or VIN > VDDQ – 0.3V Current—CMOS Inputs f = fMAX, inputs switching Automatic CE VDD = Max, Device Deselected, All Speeds Power-down VIN ≥ VDD - 0.3V or VIN ≤ 0.3V, f = Current—TTL Inputs 0, inputs static 40 mA 40 mA Input = VDD IOZ Output Leakage Current GND ≤ VI ≤ VDD, Output Disabled IOS Output Short Circuit Current VDD = Max., VOUT = GND IDD VDD Operating Supply Current VDD = Max., IOUT = 0 mA, f = fMAX = 1/tCYC ISB1 Automatic CE Power-down Current—TTL Inputs VDD = Max, Device Deselected, VIN ≥ VIH or VIN ≤ VIL f = fMAX, inputs switching ISB2 Automatic CE VDD = Max, Device Deselected, Power-down VIN ≤ 0.3V or VIN > VDD – 0.3V, Current—CMOS Inputs f = 0, inputs static ISB3 ISB4 µA –30 Input = VDD Input Current of ZZ 0.4 0.4 VDD + 0.3V VDD + 0.3V 0.8 0.7 5 V V V V V V V V µA –5 Notes: 13. Overshoot: VIH(AC) < VDD +1.5V (Pulse width less than tCYC/2), undershoot: VIL(AC) > –2V (Pulse width less than tCYC/2). 14. TPower-up: Assumes a linear ramp from 0V to VDD(min.) within 200 ms. During this time VIH < VDD and VDDQ < VDD. Document #: 38-05117 Rev. *B Page 23 of 33 CY7C1355B CY7C1357B Thermal Resistance[15] Parameter Description ΘJA Thermal Resistance (Junction to Ambient) ΘJC Thermal Resistance (Junction to Case) Test Conditions TQFP Package BGA Package fBGA Package Unit 25 25 27 °C/W 9 6 6 °C/W Test conditions follow standard test methods and procedures for measuring thermal impedance, per EIA / JESD51. Capacitance[15] Parameter Description Test Conditions CIN Input Capacitance CCLK Clock Input Capacitance CI/O Input/Output Capacitance TQFP Package BGA Package fBGA Package Unit 5 5 5 pF 5 5 5 pF 5 7 7 pF TA = 25°C, f = 1 MHz, VDD = 3.3V. VDDQ = 2.5V AC Test Loads and Waveforms 3.3V I/O Test Load R = 317Ω 3.3V OUTPUT OUTPUT RL = 50Ω Z0 = 50Ω GND 5 pF R = 351Ω INCLUDING JIG AND SCOPE 10% 90% 10% 90% ≤ 1 ns ≤ 1 ns VL = 1.5V (a) ALL INPUT PULSES VDD (c) (b) 2.5V I/O Test Load R = 1667Ω 2.5V OUTPUT OUTPUT RL = 50Ω Z0 = 50Ω GND 5 pF R =1538Ω VL = 1.25V (a) ALL INPUT PULSES VDD INCLUDING JIG AND SCOPE (b) 10% 90% 10% 90% ≤ 1 ns ≤ 1 ns (c) Notes: 15. Tested initially and after any design or process change that may affect these parameters. Document #: 38-05117 Rev. *B Page 24 of 33 CY7C1355B CY7C1357B Switching Characteristics Over the Operating Range[16, 17] 133 MHz Parameter tPOWER Description VDD(Typical) to the First Access[18] Min. Max. 117 MHz Min. Max. 100 MHz Min. Max. Unit 1 1 1 ms Clock tCYC Clock Cycle Time 7.5 8.5 10 ns tCH Clock HIGH 3.0 3.2 4.0 ns tCL Clock LOW 3.0 3.2 4.0 ns Output Times tCDV Data Output Valid after CLK Rise tDOH Data Output Hold after CLK Rise tCLZ Clock to Low-Z[19, 20, 21] tCHZ High-Z[19, 20, 21] 3.5 3.5 3.5 ns OE LOW to Output Valid 3.5 3.5 3.5 ns tOEV tOELZ tOEHZ Clock to Low-Z[19, 20, 21] OE LOW to Output [19, 20, 21] OE HIGH to Output High-Z 6.5 7.0 7.5 ns 2.0 2.0 2.0 ns 0 0 0 ns 0 0 3.5 0 3.5 ns 3.5 ns Set-up Times tAS Address Set-up before CLK Rise 1.5 1.5 1.5 ns tALS ADV/LD Set-up before CLK Rise 1.5 1.5 1.5 ns 1.5 1.5 ns tCENS WE, BWX Set-up before CLK Rise CEN Set-up before CLK Rise 1.5 1.5 1.5 1.5 ns tDS Data Input Set-up before CLK Rise 1.5 1.5 1.5 ns tCES Chip Enable Set-Up before CLK Rise 1.5 1.5 1.5 ns tWES Hold Times tAH Address Hold after CLK Rise 0.5 0.5 0.5 ns tALH ADV/LD Hold after CLK Rise 0.5 0.5 0.5 ns tWEH WE, BWX Hold after CLK Rise 0.5 0.5 0.5 ns 0.5 0.5 ns tDH CEN Hold after CLK Rise Data Input Hold after CLK Rise 0.5 0.5 0.5 0.5 ns tCEH Chip Enable Hold after CLK Rise 0.5 0.5 0.5 ns tCENH Notes: 16. Timing reference level is 1.5V when VDDQ = 3.3V and is 1.25V when VDDQ = 2.5V. 17. Test conditions shown in (a) of AC Test Loads unless otherwise noted. 18. This part has a voltage regulator internally; tPOWER is the time that the power needs to be supplied above VDD(minimum) initially, before a Read or Write operation can be initiated. 19. tCHZ, tCLZ,tOELZ, and tOEHZ are specified with AC test conditions shown in part (b) of AC Test Loads. Transition is measured ± 200 mV from steady-state voltage. 20. At any given voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same data bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to achieve High-Z prior to Low-Z under the same system conditions 21. This parameter is sampled and not 100% tested. Document #: 38-05117 Rev. *B Page 25 of 33 CY7C1355B CY7C1357B Switching Waveforms Read/Write Waveforms[22, 23, 24] 1 2 3 tCYC 4 5 6 7 8 9 A5 A6 A7 10 CLK tCENS tCENH tCES tCEH tCH tCL CEN CE ADV/LD WE BWX A1 ADDRESS tAS A2 A4 A3 tCDV tAH tDOH tCLZ DQ D(A1) tDS D(A2) Q(A3) D(A2+1) tOEV Q(A4+1) Q(A4) tOELZ WRITE D(A1) WRITE D(A2) D(A5) Q(A6) D(A7) WRITE D(A7) DESELECT tOEHZ tDH OE COMMAND tCHZ BURST WRITE D(A2+1) READ Q(A3) READ Q(A4) DON’T CARE BURST READ Q(A4+1) tDOH WRITE D(A5) READ Q(A6) UNDEFINED Notes: 22. For this waveform ZZ is tied LOW. 23. When CE is LOW, CE1 is LOW, CE2 is HIGH and CE3 is LOW. When CE is HIGH, CE1 is HIGH or CE2 is LOW or CE3 is HIGH. 24. Order of the Burst sequence is determined by the status of the MODE (0 = Linear, 1 = Interleaved). Burst operations are optional. Document #: 38-05117 Rev. *B Page 26 of 33 CY7C1355B CY7C1357B Switching Waveforms (continued) NOP, STALL AND DESELECT Cycles[22, 23, 25] 1 2 3 tCYC 4 5 6 7 8 9 A5 A6 A7 10 CLK tCENS tCENH tCH tCL CEN tCES tCEH CE ADV/LD WE BWX A1 ADDRESS tAS A2 A4 A3 tCDV tAH tDOH tCLZ DQ D(A1) tDS D(A2) Q(A3) D(A2+1) tOEV Q(A4+1) Q(A4) tOELZ WRITE D(A1) WRITE D(A2) D(A5) Q(A6) D(A7) WRITE D(A7) DESELECT tOEHZ tDH OE COMMAND tCHZ BURST WRITE D(A2+1) READ Q(A3) READ Q(A4) DON’T CARE BURST READ Q(A4+1) tDOH WRITE D(A5) READ Q(A6) UNDEFINED Note: 25. The IGNORE CLOCK EDGE or STALL cycle (Clock 3) illustrates CEN being used to create a pause. A write is not performed during this cycle. Document #: 38-05117 Rev. *B Page 27 of 33 CY7C1355B CY7C1357B Switching Waveforms (continued) ZZ Mode Timing [26, 27] CLK t ZZ ZZ I t ZZREC t ZZI SUPPLY I DDZZ t RZZI ALL INPUTS (except ZZ) DESELECT or READ Only Outputs (Q) High-Z DON’T CARE Notes: 26. Device must be deselected when entering ZZ mode. See truth table for all possible signal conditions to deselect the device. 27. DQs are in high-Z when exiting ZZ sleep mode. Ordering Information 3 Speed (MHz) 133 Ordering Code Package Name Operating Range CY7C1355B-133AC CY7C1357B-133AC A101 100-lead Thin Quad Flat Pack (14 x 20 x 1.4mm) 3 Chip Enables Commercial CY7C1355B-133AI CY7C1357B-133AI A101 100-lead Thin Quad Flat Pack (14 x 20 x 1.4mm) 3 Chip Enables Industrial CY7C1355B-133BGC BG119 119-ball (14 x 22 x 2.4 mm) BGA 3 Chip Enables and JTAG Commercial BG119 119-ball (14 x 22 x 2.4 mm) BGA 3 Chip Enables and JTAG Industrial BB165A 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.2mm) 3 Chip Enables and JTAG Commercial BB165A 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.2mm) 3 Chip Enables and JTAG Industrial CY7C1357B-133BGC CY7C1355B-133BGI CY7C1357B-133BGI CY7C1355B-133BZC CY7C1357B-133BZC CY7C1355B-133BZI CY7C1357B-133BZI 117 Part and Package Type CY7C1355B-117AC CY7C1357B-117AC A101 100-lead Thin Quad Flat Pack (14 x 20 x 1.4mm) 3 Chip Enables Commercial CY7C1355B-117AI CY7C1357B-117AI A101 100-lead Thin Quad Flat Pack (14 x 20 x 1.4mm) 3 Chip Enables Industrial CY7C1355B-117BGC BG119 119-ball (14 x 22 x 2.4 mm) BGA 3 Chip Enables and JTAG Commercial BG119 119-ball (14 x 22 x 2.4 mm) BGA 3 Chip Enables and JTAG Industrial CY7C1357B-117BGC CY7C1355B-117BGI CY7C1357B-117BGI Shaded areas contain advance information. Please contact your local sales representative for availability of these parts. Document #: 38-05117 Rev. *B Page 28 of 33 CY7C1355B CY7C1357B Ordering Information (continued) Speed (MHz) Ordering Code CY7C1355B-117BZC Package Name 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.2mm) 3 Chip Enables and JTAG Commercial BB165A 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.2mm) 3 Chip Enables and JTAG Industrial CY7C1357B-117BZI 100 CY7C1355B-100AC A101 100-lead Thin Quad Flat Pack (14 x 20 x 1.4mm) 3 Chip Enables Commercial A101 100-lead Thin Quad Flat Pack (14 x 20 x 1.4mm) 3 Chip Enables Industrial CY7C1357B-100AC CY7C1355B-100AI CY7C1357B-100AI CY7C1355B-100BGC BG119 119-ball (14 x 22 x 2.4 mm) BGA 3 Chip Enables and JTAG Commercial BG119 119-ball (14 x 22 x 2.4 mm) BGA 3 Chip Enables and JTAG Industrial BB165A 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.2mm) 3 Chip Enables and JTAG Commercial BB165A 165-ball Fine-Pitch Ball Grid Array (13 x 15 x 1.2mm) 3 Chip Enables and JTAG Industrial CY7C1357B-100BGC CY7C1355B-100BG ICY7C1357B-100BGI CY7C1355B-100BZC CY7C1357B-100BGC CY7C1355B-100BZI CY7C1357B-100BGI Operating Range BB165A CY7C1357B-117BZC CY7C1355B-117BZI Part and Package Type Shaded areas contain advance information. Please contact your local sales representative for availability of these parts. Document #: 38-05117 Rev. *B Page 29 of 33 CY7C1355B CY7C1357B Package Diagrams 100-pin Thin Plastic Quad Flatpack (14 x 20 x 1.4 mm) A101 51-85050-*A Document #: 38-05117 Rev. *B Page 30 of 33 CY7C1355B CY7C1357B Package Diagrams (continued) 119-Lead PBGA (14 x 22 x 2.4 mm) BG119 51-85115-*B Document #: 38-05117 Rev. *B Page 31 of 33 CY7C1355B CY7C1357B Package Diagrams (continued) 165-Ball FBGA (13 x 15 x 1.2 mm) BB165A 51-85122-*C NoBL and No Bus Latency are trademarks of Cypress Semiconductor Corporation. ZBT is a trademark of Integrated Device Technology. All product and company names mentioned in this document are the trademarks of their respective holders. Document #: 38-05117 Rev. *B Page 32 of 33 © Cypress Semiconductor Corporation, 2004. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges. CY7C1355B CY7C1357B Document History Page Document Title: CY7C1355B/CY7C1357B 9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL™ Architecture Document Number: 38-05117 REV. ECN NO. Issue Date Orig. of Change Description of Change ** 117908 08/28/02 RCS New Data Sheet *A 123161 12/18/02 RCS Removed Preliminary Statue (all pages). Updated JTAG Revision number and Device depth. Added JTAG boundary scan orders. Added tPower specification and Note 15. These devices require 1 ms of VDD above VDD minimum (3.135V) before operating. *B 205060 See ECN NJY Final Data Sheet Document #: 38-05117 Rev. *B Page 33 of 33