MM4204 ® Pb MM4204 Pb Free Plating Product 20 Ampere,400 Volt Common Cathode Fast Recovery Epitaxial Diode TO-3PB/TO-3PN APPLICATION · · · · · · · Cathode(Bottom Side Metal Heatsink) Freewheeling, Snubber, Clamp Inversion Welder PFC Plating Power Supply Ultrasonic Cleaner and Welder Converter & Chopper UPS Anode PRODUCT FEATURE Cathode · Ultrafast Recovery Time Internal Configuration · Soft Recovery Characteristics Anode Base Backside · Low Recovery Loss · Low Forward Voltage — · High Surge Current Capability · Low Leakage Current GENERAL DESCRIPTION MM4204 using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic. ABSOLUTE MAXIMUM RATINGS Symbol T C =25°C unless otherwise specified Parameter Test Conditions Values Unit VR Maximum D.C. Reverse Voltage 400 V V RRM Maximum Repetitive Reverse Voltage 400 V I F(AV) Average Forward Current T C =110°C, Per Diode 10 A T C =110°C, Per Package 20 A I F(RMS) RMS Forward Current T C =110°C, Per Diode 14 A I FSM Non-Repetitive Surge Forward Current T J =45°C, t=10ms, 50Hz, Sine 100 A PD Power Dissipation 83 W TJ Junction Temperature -40 to +150 °C T STG Storage Temperature Range -40 to +150 °C Torque Module-to-Sink Recommended（M3） 1.1 N·m R θJC Thermal Resistance Junction-to-Case 1.5 °C /W 6 g Weight ELECTRICAL CHARACTERISTICS Symbol Parameter T C =25°C unless otherwise specified Test Conditions Min. Typ. Max. Unit V R =400V -- -- 15 µA V R =400V, T J =125°C -- -- 250 µA I F =10A -- 1.00 -- V I F =10A, T J =125°C -- 0.87 -- V I RM Reverse Leakage Current VF Forward Voltage t rr Reverse Recovery Time I F =1A, V R =30V, di F /dt=-200A/μs -- 20 -- ns t rr Reverse Recovery Time V R =200V, I F =10A -- 25 -- ns I RRM Max. Reverse Recovery Current di F /dt=-200A/μs, T J =25°C -- 2.2 -- A t rr Reverse Recovery Time V R =200V, I F =10A -- 46 -- ns I RRM Max. Reverse Recovery Current di F /dt=-200A/μs, T J =125°C -- 5.5 -- A Rev.05 © 2006 Thinki Semiconductor Co.,Ltd. Page 1/3 http://www.thinkisemi.com/ MM4204 ® 20 70 VR=200V TJ =125°C 60 16 IF=20A TJ =125°C 12 trr (ns) IF (A) 50 8 40 30 IF=10A 20 IF=5A TJ =25°C 4 10 0 0 0 0.75 1.00 1.25 1.50 VF（V） Fig1. Forward Voltage Drop vs Forward Current 0.25 0.50 25 0 200 400 600 800 1000 diF/dt（A/μs） Fig2. Reverse Recovery Time vs diF/dt 250 VR=200V TJ =125°C VR=200V TJ =125°C 20 IF=20A 200 15 IF=10A Qrr (nc) IRRM (A) IF=20A 10 150 IF=10A IF=5A 100 IF=5A 5 50 0 0 0 400 600 1000 800 diF/dt（A/μs） Fig3. Reverse Recovery Current vs diF/dt 200 1.2 0 200 400 600 800 1000 diF/dt（A/μs） Fig4. Reverse Recovery Charge vs diF/dt 10 1 1 ZthJC (K/W) Kf 0.8 0.6 trr 0.4 0.2 0 0 10 -1 10 -2 Duty 0.5 0.2 0.1 0.05 Single Pulse IRRM Qrr 25 50 100 125 150 75 TJ (°C) Fig5. Dynamic Parameters vs Junction Temperature Rev.05 © 2006 Thinki Semiconductor Co.,Ltd. 10 -3 10 -4 -3 -2 -1 10 10 10 1 Rectangular Pulse Duration (seconds) Fig6. Transient Thermal Impedance Page 2/3 http://www.thinkisemi.com/ MM4204 ® IF trr IRRM dIF/dt 0.25 IRRM Qrr 0.9 IRRM Fig7. Diode Reverse Recovery Test Circuit and Waveform Dimensions in Millimeters Fig8. Package Outline Rev.05 © 2006 Thinki Semiconductor Co.,Ltd. Page 3/3 http://www.thinkisemi.com/