NJG1107KB2 1.5/1.9GHz LNA GaAs MMIC nGENERAL DESCRIPTION NJG1107KB2 is a Low Noise Amplifier GaAs MMIC designed for 1.5GHz and 1.9GHz band digital cellular phone and Japanese PHS handsets. This amplifier provides low noise figure, high gain and high IP3 operated by single low positive power supply. This amplifier includes internal self-bias circuit and input DC blocking capacitor. An ultra small and thin package of FLP6 is adopted. nFEATURES lLow voltage operation lLow current consumption lHigh small signal gain nPACKAGE OUTLINE NJG1107KB2 +2.7V typ. 3.0mA typ. 17dB typ. @f=1.49GHz 15dB typ. @f=1.96GHz 1.2dB typ. @f=1.49GHz 1.2dB typ. @f=1.96GHz -4.0dBm typ. @f=1.4900+1.4901GHz -2.0dBm typ. @f=1.9600+1.9601GHz FLP6-B2 (Mount Size: 2.1x2.0x0.75mm) lLow noise figure lHigh Input IP3 lUltra small & ultra thin package l This amplifier can be tuned into various frequency range.(Best for 1.5GHz or 1.9GHz Band) nPIN CONFIGURATION KB2 Type (Top View) 4 5 6 3 AMP 2 PIN Connection 1.RFout 2.GND 3.EXTCAP 4.GND 5.GND 6.RFin 1 Orientation Mark Note: Specifications and description listed in this catalog are subject to change without prior notice. -1- NJG1107KB2 nABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Drain Voltage Input Power VDD Pin Power Dissipation Operating Temp. Storage Temp. (Ta=+25°C, Zs=Zl=50Ω) RATINGS UNIT CONDITIONS 6.0 +15 V dBm PD Topr 450 -40~+85 mW °C Tstg -55~+125 °C VDD=2.7V nELECTRICAL CHARACTERISTICS 1 (1.5GHz Band) (VDD=2.7V, f=1.49GHz, Ta=+25°C, Zs=Zl=50Ω, TEST CIRCUIT1) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT Operating Frequency Drain Voltage freq1 VDD Operating Current Small Signal Gain Gain Flatness Noise Figure Pout at 1dB Gain Compression point Input 3rd Order Intercept Point RF Input Port VSWR RF Output Port VSWR IDD Gain Gflat NF RF OFF f=1.47~1.51GHz P-1dB IIP3 f=1.49+1.4901GHz RFin=-35dBm VSWRi 1.47 2.5 1.49 2.7 1.51 5.5 GHz V 15.0 - 3.0 17.0 0.5 1.2 3.8 19.0 1.0 1.4 mA dB dB dB -6.0 -2.0 - dBm -6.0 -4.0 - dBm - 1.6 2.2 1.6 2.2 VSWRo nELECTRICAL CHARACTERISTICS 2 (1.9GHz Band) (VDD=2.7V, f=1.96GHz, Ta=+25°C, Zs=Zl=50Ω, TEST CIRCUIT1) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT Operating Frequency freq2 1.89 1.96 1.99 GHz Drain Voltage Operating Current Small Signal Gain Gain Flatness Noise Figure Pout at 1dB Gain Compression point Input 3rd order Intercept Point RF Input Port VSWR RF Output Port VSWR -2- VDD IDD Gain Gflat 2.5 13.0 - 2.7 3.0 15.0 0.5 5.5 3.8 17.0 1.0 V mA dB dB NF - 1.2 1.4 dB P-1dB -3.0 +1.0 - dBm -6.0 -2.0 - dBm VSWRi - 1.6 2.2 VSWRo - 1.6 2.2 IIP3 RF OFF f=1.89~1.99GHz f=1.96+1.9601GHz RFin=-30dBm NJG1107KB2 nELECTRICAL CHARACTERISTICS 3 (1.8GHz Band) (VDD=2.7V, f=1.76GHz, Ta=+25°C, Zs=Zl=50Ω, TEST CIRCUIT1) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT Operating Frequency Drain Voltage freq3 VDD 1.75 2.5 1.76 2.7 1.78 5.5 GHz V Operating Current Small Signal Gain IDD Gain RF OFF - 3.0 16.0 3.8 - mA dB Gain Flatness Noise Figure Pout at 1dB Compression point Input 3rd order Intercept Point RF Input Port VSWR RF Output Port VSWR Gflat NF f=1.75~1.78GHz - 0.5 1.2 - dB dB - 1.1 - dBm - -2.0 - dBm VSWRi - 1.6 - - VSWRo - 1.6 - - P-1dB IIP3 f=1.76+1.7601GHz RFin=-35dBm nELECTRICAL CHARACTERISTICS 4 (1.5GHz Band ,Low Gain Version) (VDD=2.7V, f=1.49GHz, Ta=+25°C, Zs=Zl=50Ω, TEST CIRCUIT2) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT Operating Frequency freq4 1.47 1.49 1.51 GHz Drain Voltage VDD 2.5 2.7 5.5 V Operating Current IDD RF OFF 3.0 3.8 mA Small Signal Gain Gain 14.0 dB Gain Flatness Gflat f=1.47~1.51GHz 0.5 dB Noise Figure NF 1.2 dB Pout at 1dB P-1dB 0.0 dBm Compression point f=1.49+1.4901GHz Input 3rd order IIP3 -3.0 dBm Intercept Point RFin=-35dBm RF Input Port VSWRi 1.6 VSWR RF Output Port VSWRo 1.6 VSWR -3- NJG1107KB2 nPIN CONFIGURATION Pin 1 Function RFout 2,4,5 GND 3 EXTCAP 6 RFin -4- Description RF output and voltage supply pin. External matching circuits and a bypass capacitor is required. L3 is a RF choke inductor and C1 is a DC blocking capacitor. These elements are used as output matching circuit. C2 is a bypass capacitor. (Please refer to “TEST CIRCUIT”) Ground pin. To keep good RF grounding performance, please use multiple via holes to connect with ground plane and this pin. An external bypass capacitor is required. (Please refer to “TEST CIRCUIT”) RF input pin. A DC blocking capacitor is not required. An external matching circuit is required. (Please refer to “TEST CIRCUIT”) NJG1107KB2 nTYPICAL CHARACTERISTICS (1.5GHz Band) NF,Gain vs. frequency S21,S11,S22,S12 vs. frequency DD 2.6 DD 20 25 20 8 1.4 S21,S11,S22 (dB) NF (dB) 12 1.8 Gain (dB) 16 2.2 =2.7V,I =3mA) DD 4 50 40 S21 15 30 10 20 10 5 S11 0 0 -10 -5 -10 1 DD -15 -20 S22 -30 S12 -40 -20 0 0.6 1.4 1.44 1.48 1.52 frequency (GHz) 1.56 -50 -25 0.5 1.6 1 (V (V =2.7V,f=1.49GHz) DD 10 10 5 0 -5 -10 -10 -15 -20 -30 -30 -20 Pin (dBm) Gain vs. V 2 2.5 -10 =2.7V,I =3mA,f=1.49+1.4901GHz) DD DD Pout -10 Pout,IM3 (dBm) Pout (dBm) 10 0 P-1dB +1.17dBm -40 1.5 frequency (GHz) Pout, IM3 vs. Pin Pout vs. Pin 0 S12 (dB) (V (V =2.7V,I =3mA) -20 -30 -40 IM3 -50 -20 -60 -25 -70 -30 -80 -40 0 IIP3 -3.15dBm -30 -20 -10 0 Pin (dBm) NF, I DD (f=1.49GHz) 19 18.5 DD vs. V DD (f=1.49GHz) 1.3 3.4 1.2 3.3 1.1 3.2 1 3.1 17.5 17 0.9 16.5 16 2.5 3 0.8 3 3.5 4 VDD (V) 4.5 5 5.5 2.9 2.5 3 3.5 4 VDD (V) 4.5 5 5.5 -5- IDD (mA) NF (dB) Gain (dB) 18 NJG1107KB2 nTYPICAL CHARACTERISTICS (1.5GHz Band) P-1dB vs. V IIP3, OIP3 vs. V DD (f=1.49GHz) DD (f=1.49+1.4901GHz, Pin=-35dBm) 8 5 20 4 19 3 18 2 17 1 16 IIP3 (dBm) 2 0 -2 -4 -6 15 14 -2 13 -3 12 -4 11 10 -5 3 3.5 4 V 4.5 DD Gain, I DD 5 5.5 3 3.5 4 V (V) DD 4.5 5 5.5 (V) NF, P-1dB vs. Temperature vs. Temperature (VDD=2.7V, f=1.49GHz) 20 3.25 (V DD=2.7V, f=1.49GHz) 2.4 NF (dB) 2.75 18 2 1 1.6 0 1.2 -1 0.8 -2 2.5 17 -20 0 20 40 60 80 2.25 100 0.4 -40 -20 0 20 40 60 80 -3 100 Temperature ( oC ) Temperature ( oC) IIP3, OIP3 vs. Temperature (V =2.7V, f=1.49+1.4901GHz, Pin=-35dBm) DD 21 -1 20 -2 19 -3 18 -4 17 -5 16 -6 15 -7 14 -20 0 20 40 Temperature ( oC) -6- 60 80 13 100 OIP3 (dBm) IIP3 (dBm) 0 -8 -40 2 3 19 16 -40 2.5 IDD (mA) 2.5 Gain (dB) 0 -1 Equations of OIP3 and IIP3 3 × Pout - IM3 OIP3 = 2 @ Pin=-35dBm IIP3 = OIP3 - Gain P-1dB (dBm) P-1dB (dBm) 4 OIP3 (dBm) 6 NJG1107KB2 nTYPICAL CHARACTERISTICS (1.5GHz Band) S11 vs. frequency ( to 20GHz) (V (V DD 25 20 20 15 15 10 10 S22 (dB) S11 (dB) 25 S22 vs. frequency ( to 20GHz) =2.7V,I =3mA) DD 5 0 0 -5 -5 -10 -15 -15 -20 -20 -25 0 2 4 6 8 10 12 14 frequency (GHz) 16 18 20 0 2 S21 vs. frequency ( to 20GHz) (V 25 4 6 8 10 12 14 frequency (GHz) 16 18 20 S12 vs. frequency ( to 20GHz) =2.7V,I =3mA) DD (V DD 25 20 20 15 15 10 10 S12 (dB) S21 (dB) DD 5 -10 -25 =2.7V,I =3mA) DD 5 0 DD 5 0 -5 -5 -10 -10 -15 -15 -20 -20 -25 =2.7V,I =3mA) DD -25 0 2 4 6 8 10 12 14 frequency (GHz) 16 18 20 0 2 4 6 8 10 12 14 frequency (GHz) 16 18 20 -7- NJG1107KB2 nTYPICAL CHARACTERISTICS (1.9GHz Band) NF,Gain vs. frequency S21,S11,S22,S12 vs. frequency 2.6 20 25 20 NF (dB) 8 1.4 S21,S11,S22 (dB) 12 1.8 Gain (dB) 16 2.2 =2.7V,I =3mA) DD DD 50 40 S21 15 30 10 20 10 5 S22 0 0 -10 -5 -20 -10 4 1 S11 -15 0 1.8 1.84 1.88 1.92 frequency (GHz) 1.96 -30 S12 -20 0.6 S12 (dB) (V (VDD=2.7V,IDD=3mA) -40 -50 -25 2 1 1.5 2 frequency (GHz) 2.5 3 Pout, IM3 vs. Pin Pout vs. Pin (V =2.7V,f=1.96GHz) (V DD 10 10 0 =2.7V,I =3mA,f=1.96+1.9601GHz) DD DD Pout -10 P-1dB +1.17dBm -20 Pout,IM3 (dBm) Pout (dBm) 0 -10 -30 -40 IM3 -50 -60 -20 IIP3 -70 -2.21dBm -80 -90 -40 -30 -40 -30 -20 Pin (dBm) Gain vs. V -10 0 -30 -20 -10 0 Pin (dBm) DD NF, I (f=1.96GHz) 17 16.5 DD vs. V DD (f=1.96GHz) 1.3 3.4 1.2 3.3 1.1 3.2 1 3.1 15 0.9 14.5 14 2.5 3.5 4 V DD -8- 3 0.8 3 4.5 (V) 5 5.5 (mA) DD 15.5 I NF (dB) Gain (dB) 16 2.9 2.5 3 3.5 4 V (V) DD 4.5 5 5.5 NJG1107KB2 nTYPICAL CHARACTERISTICS (1.9GHz Band) IIP3, OIP3 vs. V DD 8 6 IIP3 (dBm) 2 0 -2 -4 6 20 5 19 4 18 3 17 2 16 1 15 0 14 -1 13 -2 12 -3 11 10 -4 -6 2.5 3 3.5 4 V 4.5 DD Gain, I DD 5 3 3.5 4 4.5 VDD (V) (V) vs. Temperature (V 18 5 5.5 NF, P-1dB vs. Temperature (V =2.7V, f=1.96GHz) DD 3.25 =2.7V, f=1.96GHz) DD 2.4 2 2 1 1.6 0 1.2 -1 0.8 -2 NF (dB) 2.75 16 IDD (mA) 3 17 2.5 15 14 -40 2.5 5.5 -20 0 20 40 60 80 0.4 2.25 100 -40 Temperature ( oC) -20 0 20 40 60 80 -3 100 Temperature ( oC ) IIP3, OIP3 vs. Temperature (V =2.7V, f=1.96+1.9601GHz, Pin=-30dBm) DD 20 0 19 -1 18 -2 17 -3 16 -4 15 -5 14 -6 13 -7 -40 -20 0 20 40 60 80 12 100 OIP3 (dBm) IIP3 (dBm) 1 Equations of OIP3 and IIP3 3 × Pout - IM3 OIP3 = 2 @ Pin=-30dBm IIP3 = OIP3 - Gain Temperature ( oC) -9- P-1dB (dB) P-1dB (dBm) 4 Gain (dB) DD (f=1.96+1.9601GHz, Pin=-30dBm) (f=1.96GHz) OIP3 (dBm) P-1dB vs. V NJG1107KB2 nTYPICAL CHARACTERISTICS (1.9GHz Band) S11 vs. frequency ( to 20GHz) (V (V DD 25 20 20 15 15 10 10 S22 (dB) S11 (dB) 25 S22 vs. frequency ( to 20GHz) =2.7V,I =3mA) DD 5 0 0 -5 -5 -10 -15 -15 -20 -20 -25 0 2 4 6 8 10 12 14 frequency (GHz) 16 18 20 0 2 S21 vs. frequency ( to 20GHz) (V 4 6 8 10 12 14 frequency (GHz) 16 18 20 S12 vs. frequency ( to 20GHz) =2.7V,I =3mA) DD (V DD 25 20 20 15 15 10 10 S12 (dB) S21 (dB) 25 5 0 =2.7V,I =3mA) DD DD 5 0 -5 -5 -10 -10 -15 -15 -20 -20 -25 -25 0 - 10 - DD 5 -10 -25 =2.7V,I =3mA) DD 2 4 6 8 10 12 14 frequency (GHz) 16 18 20 0 2 4 6 8 10 12 14 frequency (GHz) 16 18 20 NJG1107KB2 nTYPICAL CHARACTERISTICS (1.8GHz Band) NF,Gain vs. frequency S21,S11,S22,S12 vs. frequency DD (V DD 20 2.6 25 20 NF (dB) 8 1.4 S21,S11,S22 (dB) 12 1.8 Gain (dB) 16 2.2 =2.7V,I =3mA) DD 4 1.7 1.75 frequency (GHz) 1.8 40 15 30 10 20 10 5 S22 0 0 -10 -5 -20 S11 -30 -15 -20 0.6 1.65 50 S21 -10 1 DD 0 1.85 -40 S12 -50 -25 1 1.5 2 frequency (GHz) 2.5 3 Pout, IM3 vs. Pin Pout vs. Pin (V =2.7V,f=1.76GHz) (V DD 10 10 0 =2.7V,I =3mA,f=1.76+1.7601GHz) DD DD Pout -10 P-1dB +1.14dBm -20 Pout,IM3 (dBm) Pout (dBm) 0 -10 -30 -40 IM3 -50 -60 -20 IIP3 -70 -2.01dBm -80 -30 -40 -30 -20 Pin (dBm) -10 0 -90 -40 -30 -20 -10 0 Pin (dBm) - 11 - S12 (dB) (V =2.7V,I =3mA) NJG1107KB2 nTYPICAL CHARACTERISTICS (1.8GHz Band) S11 vs. frequency ( to 20GHz) (V (V DD 25 50 40 15 15 30 10 10 20 5 10 0 0 5 0 -5 -5 -10 -10 -10 -20 -15 -15 -30 -20 -20 -40 -50 -25 0 2 4 6 8 10 12 14 frequency (GHz) 16 18 20 0 2 S21 vs. frequency ( to 20GHz) (V DD 20 15 30 15 10 20 10 5 10 0 0 S12 (dB) 40 -5 -10 -20 -10 -15 -30 -15 -20 -40 -20 -50 -25 -25 8 10 12 14 frequency (GHz) 16 18 20 18 20 =2.7V,I =3mA) DD DD 0 -10 6 16 5 -5 4 8 10 12 14 frequency (GHz) (V DD 20 2 6 S12 vs. frequency ( to 20GHz) 25 0 4 =2.7V,I =3mA) 50 25 S21 (dB) DD 20 -25 - 12 - =2.7V,I =3mA) DD 20 S22 (dB) S11 (dB) 25 S22 vs. frequency ( to 20GHz) =2.7V,I =3mA) DD 0 2 4 6 8 10 12 14 frequency (GHz) 16 18 20 NJG1107KB2 nTYPICAL CHARACTERISTICS (1.5GHz Band, Low Gain Version) NF,Gain vs. frequency S21,S11,S22,S12 vs. frequency DD 2.6 DD 20 25 16 1.8 12 8 1.4 S21,S11,S22 (dB) 2.2 Gain (dB) NF (dB) 20 4 DD 50 40 S21 15 30 10 20 5 10 S22 0 0 -10 -5 -10 1 =2.7V,I =3mA) DD -20 S11 -15 -30 S12 -40 -20 0 0.6 1.4 1.44 1.48 1.52 frequency (GHz) 1.56 -50 -25 0.5 1.6 1 1.5 frequency (GHz) 2 2.5 Pout, IM3 vs. Pin Pout vs. Pin (V (V =2.7V,f=1.49GHz) DD 10 10 0 5 =2.7V,I =3mA,f=1.49+1.4901GHz) DD DD Pout -10 0 P-1dB +0.00dBm -5 Pout,IM3 (dBm) Pout (dBm) S12 (dB) (V (V =2.7V,I =3mA) -10 -15 -20 -30 -40 IM3 -50 -20 -60 -25 -70 -30 -40 -35 -30 -25 -20 -15 Pin (dBm) -10 -5 0 -80 -40 IIP3 -2.89dBm -35 -30 -25 -20 -15 -10 -5 0 Pin (dBm) - 13 - NJG1107KB2 nTYPICAL CHARACTERISTICS (1.5GHz Band, Low Gain Version) S11 vs. frequency ( to 20GHz) (V (V DD 25 20 20 15 15 10 10 S22 (dB) S11 (dB) 25 S22 vs. frequency ( to 20GHz) =2.7V,I =3mA) DD 5 0 0 -5 -5 -10 -15 -15 -20 -20 -25 0 2 4 6 8 10 12 14 frequency (GHz) 16 18 20 0 2 S21 vs. frequency ( to 20GHz) (V 25 4 6 DD 8 10 12 14 frequency (GHz) 16 18 20 S12 vs. frequency ( to 20GHz) =2.7V,I =3mA) (V DD 25 20 20 15 15 10 10 S12 (dB) S21 (dB) DD 5 -10 -25 =2.7V,I =3mA) DD 5 0 DD 5 0 -5 -5 -10 -10 -15 -15 -20 -20 -25 =2.7V,I =3mA) DD -25 0 2 4 6 8 10 12 14 frequency (GHz) 16 18 20 0 2 4 6 8 10 12 14 frequency (GHz) 16 18 20 - 14 - NJG1107KB2 nTYPICAL CHARACTERISTICS Scattering Parameter Table VDD=2.7V, IDD=3mA, Zo=50Ω S11 S21 Freq mag ang mag ang (GHz) (units) (deg) (units) (deg) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 1.000 0.986 0.986 0.972 0.965 0.957 0.943 0.929 0.910 0.903 0.894 0.879 0.864 0.852 0.843 0.826 0.818 0.810 0.801 0.794 0.783 0.782 0.770 0.772 0.760 0.761 0.757 0.756 0.757 0.752 -3.130 -4.217 -6.161 -8.026 -10.209 -12.032 -13.490 -15.249 -16.014 -16.960 -18.131 -18.645 -19.500 -21.338 -22.810 -24.483 -24.447 -26.509 -27.539 -29.642 -30.807 -33.473 -34.972 -35.870 -37.091 -38.975 -40.916 -41.260 -42.651 -42.892 2.094 2.074 2.046 2.012 1.991 1.943 1.909 1.851 1.793 1.765 1.710 1.673 1.636 1.627 1.578 1.541 1.513 1.503 1.489 1.452 1.453 1.421 1.426 1.391 1.397 1.376 1.359 1.322 1.294 1.267 S12 mag (units) 176.987 171.002 165.318 159.545 153.712 147.933 143.180 138.232 133.807 129.856 125.443 121.935 118.442 114.415 110.659 107.013 104.077 100.734 97.286 93.725 90.359 86.597 83.223 79.970 76.578 73.069 68.921 65.450 62.030 58.521 4 0.012 0.002 0.007 0.003 0.005 0.004 0.005 0.008 0.006 0.009 0.009 0.010 0.011 0.012 0.014 0.014 0.015 0.016 0.018 0.019 0.020 0.022 0.022 0.026 0.027 0.030 0.031 0.034 0.035 0.036 S22 ang (deg) mag (units) -25.995 110.707 92.945 62.606 103.324 96.002 75.842 90.203 93.660 85.810 95.094 92.781 91.381 100.617 99.522 99.175 100.001 103.271 106.687 108.548 106.305 107.071 107.349 109.866 112.983 109.600 106.376 109.318 106.983 108.989 0.965 0.967 0.962 0.960 0.961 0.953 0.949 0.940 0.931 0.928 0.931 0.921 0.919 0.919 0.918 0.914 0.918 0.925 0.920 0.921 0.924 0.922 0.920 0.919 0.914 0.920 0.907 0.902 0.893 0.879 ang (deg) -1.855 -1.782 -3.088 -3.801 -5.113 -6.159 -7.623 -9.144 -9.943 -10.876 -12.170 -13.089 -14.156 -14.843 -16.259 -17.088 -18.228 -19.508 -20.507 -21.024 -22.491 -24.160 -25.779 -27.462 -29.724 -32.086 -35.211 -38.255 -41.787 -45.326 3 1000pF S11 5 2 6 1 Ref. S22 Ref. Scattering Parameter Measurement Circuit - 15 - NJG1107KB2 nTYPICAL CHARACTERISTICS (1.5GHz Band, Low Gain Version) Scattering Parameter Table VDD=2.7V, IDD=3mA, Zo=50Ω S11 S21 S12 Freq mag ang mag ang mag ang (GHz) (units) (deg) (units) (deg) (units) (deg) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 1.011 1.023 1.027 1.036 1.029 1.027 1.007 0.996 0.978 0.961 0.940 0.923 0.905 0.889 0.877 0.860 0.849 0.834 0.822 0.814 0.801 0.791 0.784 0.773 0.766 0.756 0.753 0.748 0.745 0.744 -1.815 -4.177 -6.876 -10.171 -13.604 -17.041 -20.090 -22.496 -25.098 -27.178 -28.800 -30.761 -32.462 -33.815 -34.976 -36.777 -37.774 -39.260 -40.858 -42.312 -43.887 -45.820 -47.584 -49.825 -51.948 -54.101 -56.479 -59.220 -61.715 -64.848 0.619 1.049 1.402 1.681 1.843 1.967 1.997 1.994 1.967 1.925 1.857 1.825 1.785 1.719 1.679 1.610 1.568 1.534 1.490 1.464 1.435 1.393 1.365 1.332 1.311 1.285 1.260 1.229 1.213 1.189 4 -137.421 -141.929 -152.156 -164.509 -176.486 172.550 162.037 153.204 144.936 137.106 131.070 124.735 118.431 113.194 107.647 102.741 98.621 94.075 89.890 85.613 81.588 77.520 73.663 69.756 66.211 62.518 58.997 55.237 51.930 48.547 0.006 0.005 0.004 0.008 0.006 0.006 0.010 0.009 0.009 0.008 0.010 0.012 0.011 0.010 0.014 0.014 0.014 0.015 0.015 0.017 0.017 0.021 0.019 0.021 0.024 0.025 0.028 0.029 0.031 0.031 150.071 111.664 72.732 71.899 80.582 96.630 79.136 78.039 80.635 73.136 71.678 76.438 77.174 78.254 83.456 73.747 80.053 85.009 83.753 88.727 92.695 98.708 95.532 93.049 93.358 97.398 99.809 93.593 100.273 97.032 3 10pF S11 5 2 6 1 Ref. S22 Ref. Scattering Parameter Measurement Circuit - 16 - S22 mag (units) 0.998 0.996 0.999 0.995 0.993 0.982 0.983 0.976 0.967 0.967 0.961 0.954 0.948 0.946 0.947 0.947 0.942 0.938 0.939 0.939 0.938 0.939 0.936 0.937 0.940 0.942 0.946 0.949 0.947 0.950 ang (deg) -1.269 -3.638 -4.808 -6.754 -8.514 -9.913 -12.453 -14.051 -15.603 -17.199 -17.813 -19.024 -21.016 -22.555 -24.779 -26.267 -27.354 -28.669 -29.677 -31.456 -32.776 -34.232 -35.915 -36.454 -38.089 -39.619 -40.798 -42.180 -43.117 -44.659 NJG1107KB2 nTEST CIRCUIT 1 (1.5/1.8/1.9GHz Band) (Top View) GND EXTCAP 4 3 C3 GND RF Input 5 AMP 2 GND L4 L2 6 C1 1 L3 RF Output VDD=2.7V L1 C2 nTEST CIRCUIT 2 (1.5GHz Band, Low Gain Version) (Top View) GND 3 4 EXTCAP C3 GND RF Input L1 5 AMP 2 GND R1 L2 6 C1 1 L3 RF Output VDD=2.7V C2 - 17 - NJG1107KB2 nRECOMMENDED PCB DESIGN (Top View) (Top View) C3 C3 NJG1107 L2 RF IN L4 L3 C1 L1 L2 RF OUT RF IN L1 NJG1107 L3 C1 R1 RF OUT C2 C2 1.5/1.8/1.9GHz Band 1.5GHz Band, Low Gain Version PCB: FR4 t=0.2mm MICROSTRIP LINE WIDTH=0.4mm(Zo=50Ω) PCB SIZE: 14.0 x 14.0mm Parts List Parts ID - 18 - Constant 1.9GHz 1.8GHz Band Band 5.6nH 6.8nH Comment 1.5GHzBand Low Gain 10nH TAIYO-YUDEN HK1005 Series L1 1.5GHz Band 10nH L2 12nH 5.6nH 8.2nH 12nH TAIYO-YUDEN HK1005 Series L3 5.6nH 3.9nH 6.8nH 6.8nH TAIYO-YUDEN HK1005 Series L4 15nH 10nH 12nH - C1 5pF 13pF 30pF 0.75pF TAIYO-YUDEN HK1005 Series MURATA GRM36 Series C2 1000pF 1000pF 1000pF 1000pF MURATA GRM36 Series C3 1000pF 1000pF 1000pF 10pF MURATA GRM36 Series R1 - - - 36Ω NJG1107KB2 nPACKAGE OUTLINE (FLP6-B2) 0.75±0.05 2.0±0.1 5 +0.1 0.15-0.05 4 2.1±0.1 0.2 1.7±0.1 0.2 6 1 2 3 0.65 0.1 0.1 0.65 Lead material : Copper Lead surface finish : Solder plating Molding material : Epoxy resin UNIT : mm Weight : 6.5mg +0.1 0.2-0.05 Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. • Do NOT eat or put into mouth. • Do NOT dispose in fire or break up this product. • Do NOT chemically make gas or powder with this product. • To waste this product, please obey the relating law of your country. [CAUTION] The specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle with care to avoid these damages. - 19 -