MITSUBISHI IGBT MODULES CM30MD3-12H MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE CM30MD3-12H ¡IC ..................................................................... 30A ¡VCES ............................................................ 600V ¡Insulated Type ¡CIB Module 3φ Inverter+1φ Converter ¡UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC & DC motor controls, General purpose inverters, Servo controls, NC, Robotics, UPS OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm P P1 R S GU GV EU EV GW EW GU GV GW E T B U V W CIRCUIT DIAGRAM GV N S T GE 10.16 10.16 GE GE GB G G G E U V W E N : NOT CONNECTED GB : NOT CONNECTED 29 ±0.25 P1 10.16 2.54 2.54 2.54 2.54 17.2 GW GU 2.54 GW 58 60 P 15 EW GV 2.54 15 EV GU 2.54 8 EU 29 ±0.25 2-φ4.5 MOUNTING HOLES R 13 12.5 12.5 5 B 15 15 12.5 12.5 9 2-R5.5 105 ±0.25 4 2 115 0.6 t = 0.6 12 6.3 t = 0.6 LABEL 45° MAIN CIRCUIT TERMINAL CONTROL CIRCUIT TERMINAL Feb.1999 MITSUBISHI IGBT MODULES CM30MD3-12H MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE MAXIMUM RATINGS INVERTER PART Symbol VCES VGES IC ICM IE (Note. 1) IEM (Note. 1) PC (Note. 3) (Tj = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Collector Current Emitter Current Maximum collector dissipation Condition G – E Short C – E Short TC = 25°C PULSE TC = 25°C PULSE Tf = 25°C (Note. 2) (Note. 2) Rating 600 ±20 30 60 30 60 66 Unit Rating Unit 800 220 25 550 1.2✕103 V V A A A 2s Rating Unit –40 ~ +150 –40 ~ +125 2500 0.98 ~1.47 100 °C °C V N.m g V V A A A A W CONVERTER PART Symbol VRRM Ea IO IFSM I2t Parameter Repetitive peak reverse voltage Recommended AC input voltage DC output current Surge (non-repetitive) forward current I2t for fusing Condition 1φ rectifying circuit Tf = 111°C 1 cycle at 60Hz, peak value Non-repetitive Value for one cycle of surge current COMMON RATING Symbol Tj Tstg Viso — — Parameter Junction temperature Storage temperature Isolation voltage Mounting torque Weight Condition AC 1 min. Mounting M4 screw Typical value Feb.1999 MITSUBISHI IGBT MODULES CM30MD3-12H MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE ELECTRICAL CHARACTERISTICS INVERTER PART Symbol (Tj = 25°C) VCE = VCES, VGE = 0V Min. — Limits Typ. — Max. 1 IC = 3mA, VCE = 10V 4.5 6 7.5 V VGE = VGES, VCE = 0V Tj = 25°C IC = 30A, VGE = 15V Tj = 150°C — — — — — — — — — — — — — — — — — 2.1 2.15 — — — 90 — — — — — — 0.08 — — 0.5 2.8 — 3.0 2.4 0.6 — 120 300 200 300 2.8 110 — 1.9 2.4 µA Min. — — — Limits Typ. — — — Max. 8 1.6 1.7 Parameter Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-emitter cutoff current IGES Collector-emitter VCE(sat) saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Total gate charge QG Turn-on delay time td (on) Turn-on rise time tr td (off) Turn-off delay time tf Turn-off fall time VEC (Note. 1) Emitter-collector voltage trr (Note. 1) Reverse recovery time Qrr (Note. 1) Reverse recovery charge Rth(j-f)Q (Note. 5) Thermal resistance Rth(j-f)R (Note. 5) ICES Test conditions VCE = 10V VGE = 0V VCC = 300V, IC = 30A, VGE = 15V VCC = 300V, IC = 30A VGE1 = VGE2 = 15V RG = 21Ω Resistive load IE = 30A, VGE = 0V IE = 30A, VGE = 0V die / dt = – 60A / µs IGBT part, Per 1/6 module FWDi part, Per 1/6 module (Note. 4) Unit mA V nF nF nF nC ns ns ns ns V ns µC °C/W °C/W CONVERTER PART Symbol Parameter Repetitive reverse current IRRM Forward voltage drop VFM Rth(j-f) (Note. 5) Thermal resistance Note 1. 2. 3. 4. 5. Condition VR = VRRM, Tj = 150°C IF = 40A Per 1/4 module Unit mA V °C/W IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. Junction temperature (Tj) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise. Thermal resistance is specified under following conditions. • The conductive greese applied, between module and fin. • Al plate is used as fin. Feb.1999 MITSUBISHI IGBT MODULES CM30MD3-12H MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) VGE=20 (V) 50 Tj=25°C 60 15 12 40 COLLECTOR CURRENT IC (A) COLLECTOR CURRENT IC (A) 60 TRANSFER CHARACTERISTICS (TYPICAL) 11 30 10 20 9 10 8 7 0 0 1 2 3 4 5 6 7 8 30 20 10 Tj = 25°C Tj = 125°C 0 2 4 6 8 10 12 14 16 18 20 GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 VGE = 15V Tj = 25°C Tj = 125°C 4 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 40 COLLECTOR-EMITTER VOLTAGE VCE (V) 5 3 2 1 0 0 10 20 30 40 50 8 7 6 IC = 60A 5 IC = 30A 4 3 2 IC = 12A 1 0 2 4 6 8 10 12 14 16 18 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISITICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 101 CAPACITANCE Cies, Coes, Cres (nF) Tj = 25°C 102 7 5 3 2 101 7 5 3 2 Tj = 25°C 9 0 60 2 EMITTER CURRENT IE (A) 50 0 9 10 VCE = 10V 0 0.8 1.6 2.4 3.2 4.0 EMITTER-COLLECTOR VOLTAGE VEC (V) 7 VGE = 0V 5 3 2 100 Cies Coes 7 5 3 2 10–1 7 5 3 2 10–2 Cres 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 COLLECTOR-EMITTER VOLTAGE VCE (V) Feb.1999 MITSUBISHI IGBT MODULES CM30MD3-12H HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY TIME trr (ns) 103 tf 3 td(off) 2 102 7 5 td(on) VCC = 300V VGE = ±15V RG = 21Ω Tj = 125°C 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j – f) 101 0 10 tr 2 3 5 7 101 2 2 5 3 3 Irr 2 102 2 100 trr 7 5 7 5 3 3 2 2 2 3 5 7 101 10–1 2 3 5 7 102 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 Tf = 25°C Rth(j – f) = 1.9°C/ W 100 5 101 0 10 5 7 102 3 7 5 3 2 3 2 10–1 10–1 10–2 10–2 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 TIME (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j – f) SWITCHING TIMES (ns) 7 5 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 101 – di/dt = 60A / µs 7 7 Tj = 25°C REVERSE RECOVERY CURRENT lrr (A) MEDIUM POWER SWITCHING USE FLAT-BASE TYPE, INSULATED TYPE 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 Tf = 25°C 2 100 Rth(j – f) = 2.4°C/ W 7 5 3 2 3 2 10–1 10–1 10–2 10–2 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 TIME (s) VGE – GATE CHARGE (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 30A 18 16 VCC = 200V 14 12 VCC = 300V 10 8 6 4 2 0 0 20 40 60 80 100 120 GATE CHARGE QG (nC) Feb.1999