DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2047L UHF power LDMOS transistor Product specification Supersedes data of 1999 Apr 01 1999 Dec 06 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2047L FEATURES PINNING • High power gain PIN DESCRIPTION • Easy power control 1 drain • Excellent ruggedness 2 gate • Source on underside eliminates DC isolators, reducing common mode inductance 3 source, connected to flange • Designed for broadband operation (1.8 to 2 GHz) • Internal input and output matching for high gain and efficiency. handbook, halfpage 1 APPLICATIONS • Common source class-AB operation for PCN and PCS applications in the 1800 to 2000 MHz frequency range. 3 2 Top view DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange. MBK394 Fig.1 Simplified outline SOT502A. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION Two-tone, class-AB f (MHz) VDS (V) PL (W) Gp (dB) ηD (%) dim (dBc) 26 65 (PEP) >10.5 >30 ≤−25 MIN. MAX. UNIT f1 = 2000; f2 = 2000.1 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER VDS drain-source voltage − 65 V VGS gate-source voltage − ±15 V ID DC drain current − 9 A Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 1999 Dec 06 2 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2047L THERMAL CHARACTERISTICS SYMBOL Rth j-h PARAMETER CONDITIONS VALUE UNIT thermal resistance from junction to heatsink Th = 25 °C, Ptot = 152 W, note 1 1.15 K/W Note 1. Determined under specified RF operating conditions. CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 1.4 mA 65 − − V VGSth gate-source threshold voltage VDS = 10 V; ID = 140 mA 1.5 − 3.5 V IDSS drain-source leakage current VGS = 0; VDS = 26 V − − 10 µA IDSX on-state drain current VGS = VGS th + 9 V; VDS = 10 V 18 − − A IGSS gate leakage current VGS = ±15 V; VDS = 0 − − 250 nA gfs forward transconductance VDS = 10 V; ID = 5 A − 4 − S RDSon drain-source on-state resistance VGS = VGS th + 9 V; ID = 5 A − 0.17 − Ω Crss feedback capacitance VGS = 0; VDS = 26 V; f = 1 MHz − 3.4 − pF APPLICATION INFORMATION RF performance in a common source class-AB circuit. Th = 25 °C; Rth j-h = 1.15 K/W, unless otherwise specified. MODE OF OPERATION Two-tone, class-AB f (MHz) VDS (V) IDQ (mA) PL (W) Gp (dB) ηD (%) dim (dBc) f1 = 2000; f2 = 2000.1 26 350 65 (PEP) >10.5 >30 ≤−25 Ruggedness in class-AB operation The BLF2047L is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 26 V; IDQ = 350 mA; PL = 65 W; f = 2000 MHz. 1999 Dec 06 3 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2047L MGS950 handbook, halfpage ηD Gp (dB) dim (dBc) −10 (%) 40 Gp MGS951 0 50 15 handbook, halfpage −20 30 ηD −30 10 d3 20 −40 10 5 20 0 40 60 d5 −50 d7 −60 0 80 100 PL (PEP) (W) 0 20 40 60 80 100 PL (PEP) (W) f1 = 2000 MHz; f2 = 2000.1 MHz; VDS = 26 V; IDQ = 350 mA; Th ≤ 25 °C. f1 = 2000 MHz; f2 = 2000.1 MHz; VDS = 26 V; IDQ = 350 mA; Th ≤ 25 °C. Fig.2 Fig.3 Power gain and drain efficiency as a function of load power; typical values. Intermodulation distortion as a function of load power; typical values. MGS952 MGS953 8 4 handbook, halfpage handbook, halfpage Zi (Ω) ZL (Ω) 6 RL 2 xi 4 0 ri 2 −2 0 −4 −2 1.6 1.8 2 2.2 f (GHz) −6 1.6 2.4 XL 1.8 2 2.2 VDS = 26 V; ID = 350 mA; PL = 65 W; Th ≤ 25 °C. VDS = 26 V; ID = 350 mA; PL = 65 W; Th ≤ 25 °C. Fig.4 Fig.5 Input impedance as a function of frequency (series components); typical values. 1999 Dec 06 4 f (GHz) 2.4 Load impedance as a function of frequency (series components); typical values. Philips Semiconductors Product specification UHF power LDMOS transistor BLF2047L F1 handbook, full pagewidth C13 C15 C6 R1 R2 Vgate Vdd C14 C11 C5 L4 C12 C16 C17 L13 C4 C10 L10 L6 L11 L2 L15 L17 L8 input 50 Ω C9 C3 L20 L1 L3 L5 C2 L7 L12 L9 L14 L16 C7 C1 L18 L19 output 50 Ω C8 MGS954 Fig.6 Class-AB test circuit at f = 2 GHz. 1999 Dec 06 5 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2047L List of components (see Figs. 6 and 7) COMPONENT DESCRIPTION VALUE C1, C2, C7 and C8 Tekelec variable capacitor; type 37271 DIMENSIONS CATALOGUE NO. 0.6 to 4.5 pF C3, C9 multilayer ceramic chip capacitor; note 1 12 pF C4, C10 multilayer ceramic chip capacitor; note 2 12 pF C5, C12 and C16 electrolytic capacitor C6, C11 and C15 multilayer ceramic chip capacitor; note 1 1 nF C13 and C17 electrolytic capacitor 100 µF; 63 V 2222 037 58101 C14 multilayer ceramic chip capacitor 100 nF 2222 581 16641 F1 Ferroxcube chip-bead 8DS3/3/8/9-4S2 4.5 µF; 50 V 4330 030 36301 50 Ω L1 2.9 × 2.4 mm L2 10.8 Ω 4 × 16.3 mm L3 50 Ω 3.7 × 2.4 mm L4 6Ω 2 × 30.8 mm L5 50 Ω 3.6 × 2.4 mm L6 9Ω 3 × 19.9 mm L7 50 Ω 7.8 × 2.4 mm L8 18.5 Ω 4 × 8.8 mm 24.4 Ω 5 × 6.3 mm 5.1 Ω 7 × 37 mm L12 25.4 Ω 10.1 × 6 mm L13 5.7 Ω 2.4 × 32.8 mm L14 25.4 Ω 6.4 × 6 mm L15 10 Ω 3.5 × 17.8 mm L9 L10 and L11 stripline; note 3 L16 50 Ω 10.8 × 2.4 mm L17 11.8 Ω 3 × 14.9 mm L18 50 Ω 2.3 × 2.4 mm L19 50 Ω 3 × 2.4 mm L20 50 Ω 5.5 × 2.4 mm R1 and R2 10 Ω, 0.6 W metal film resistor 2322 156 11009 Notes 1. American Technical Ceramics type 100B or capacitor of same quality. 2. American Technical Ceramics type 100A or capacitor of same quality. 3. The striplines are on a double copper-clad printed-circuit board with Teflon dielectric (εr = 2.2); thickness 0.79 mm. 1999 Dec 06 6 Philips Semiconductors Product specification UHF power LDMOS transistor handbook, full pagewidth BLF2047L 50 50 95 BLF2047L INPUT BLF2047L OUTPUT PH990118 PH990117 VDD VGS C6 R2 C17 C16 C5 R1 C11 F1 C13 C15 C14 C10 C4 C12 C9 C3 C2 C1 C7 C8 BLF2047L INPUT BLF2047L OUTPUT PH990118 PH990117 MGS955 Dimensions in mm. The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (εr = 2.2), thickness 0.79 mm. The other side is unetched and serves as a ground plane. Fig.7 Component layout for 2 GHz class-AB test circuit. 1999 Dec 06 7 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2047L PACKAGE OUTLINE Flanged LDMOST package; 2 mounting holes; 2 leads SOT502A D A F 3 D1 U1 B q c C 1 H L E1 p U2 E w1 M A M B M A 2 w2 M C M b 0 5 Q 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 4.72 3.99 12.83 12.57 0.15 0.08 inches 0.186 0.157 0.505 0.006 0.495 0.003 OUTLINE VERSION D E E1 F H L p Q q U1 U2 w1 w2 20.02 19.96 19.61 19.66 9.50 9.30 9.53 9.25 1.14 0.89 19.94 18.92 5.33 4.32 3.38 3.12 1.70 1.45 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.788 0.786 0.772 0.774 0.374 0.375 0.366 0.364 0.067 1.100 0.057 1.345 1.335 0.390 0.380 0.01 0.02 D1 0.045 0.785 0.035 0.745 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-06-07 99-10-13 SOT502A 1999 Dec 06 0.210 0.133 0.170 0.123 8 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2047L DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Dec 06 9 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2047L NOTES 1999 Dec 06 10 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2047L NOTES 1999 Dec 06 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 125002/02/pp12 Date of release: 1999 Dec 06 Document order number: 9397 750 06452