MSN6007F Thermal Characteristic (Note 2) Thermal Resistance,Junction-to-Case RθJC ℃/W 2.6 Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 600 Zero Gate Voltage Drain Current IDSS VDS=600V,VGS=0V - Gate-Body Leakage Current IGSS VGS=±30V,VDS=0V - Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 2 Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=5.0A - gFS VDS=40V,ID=3.5A Typ Max Unit - V - 1 μA - ±100 nA 4 V 1.1 1.3 Ω - 6.2 - S - 1120 - PF - 115 - PF Crss - 23 - PF Turn-on Delay Time td(on) - 30 - nS Turn-on Rise Time tr VDD=300V,ID=7A,RL=25Ω - 80 - nS td(off) VGS=10V,RG=2.5Ω - 125 - nS - 60 - nS - 25 nC - 6.0 nC - 10 nC Off Characteristics On Characteristics (Note 3) Forward Transconductance Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics VDS=25V,VGS=0V, F=1.0MHz (Note 4) Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS =480V,I D=7A, VGS=10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS Reverse Recovery Time VGS=0V,IS=7.0A trr Reverse Recovery Charge Qrr Forward Turn-On Time ton TJ = 25°C, IF = 7.0A di/dt = 100A/μs (Note3) - 1.4 V 7.0 A - - - 315 nS - 2.6 μC Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition: j=25℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω MORE Semiconductor Company Limited http://www.moresemi.com 2/5 MSN6007F Typical Electrical and Thermal Characteristics (Curves) 12 2.5 ID, Drain Current (A) VGS=10,9,8,7V 2.0 1.5 1.0 VGS=4V 0.5 0 0 1 3 2 4 5 6 25 C 2 TJ=125C 0 d Ciss li N 900 600 300 Coss Crss 0 5 10 15 20 25 3.0 2.5 2 4 6 8 10 ID=3.1A VGS=10V 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS IS, Source-drain current (A) ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 -55 C Figure 2. Transfer Characteristics R C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage 4 Figure 1. Output Characteristics 1200 1.2 6 VGS, Gate-to-Source Voltage (V) 1500 1.3 8 VDS, Drain-to-Source Voltage (V) 1800 0 10 0 DS(ON), orma ze RDS(ON), On-Resistance(Ohms) ID, Drain Current (A) 3.0 -25 0 25 50 75 100 125 150 VGS=0V 10 0 10 -1 10 -2 0.2 0.6 1.0 1.4 1.8 2.2 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current MORE Semiconductor Company Limited http://www.moresemi.com 3/5 10 VDS=480V ID=7A RDS(ON)Limit 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) MSN6007F 6 4 2 0 0 4 8 16 12 10 1ms 10ms 10 10 20 100ms 1 DC 0 TC=25 C TJ=175 C Single Pulse -1 10 0 10 1 10 2 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area 3 VDD t on RL V IN D tf 90% 90% VOUT VGS RGEN toff td(off) tr td(on) VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms r(t),Normalized Effective Transient Thermal Impedance Figure 9. Switching Test Circuit 10 0 D=0.5 0.2 10 0.1 -1 PDM 0.05 0.02 0.01 t1 Single Pulse 10 -2 10 -2 t2 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 10 -1 10 0 1 10 10 2 3 10 10 4 Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve MORE Semiconductor Company Limited http://www.moresemi.com 4/5 MSN6007F TO-220F-3L Package Information MORE Semiconductor Company Limited http://www.moresemi.com 5/5