Filtronic FMS2024 Dc-20 ghz mmic spdt reflective switch Datasheet

FMS2024
Production Datasheet v3.0
DC–20 GHZ MMIC SPDT REFLECTIVE SWITCH
FEATURES
•
•
•
•
•
FUNCTIONAL SCHEMATIC
V2
Low insertion loss: 1.4 dB at 20 GHz
High isolation: 37 dB at 20 GHz
All reflective design
Excellent low control voltage performance
Available in die form
V1
RFO1
V11
V22
RFIN
GENERAL DESCRIPTION
V33
V44
The FMS2024 is a low loss high isolation
broadband single-pole-double-throw Gallium
Arsenide switch, designed on the FL05 0.5µm
switch process from Filtronic.
This process technology offers leading-edge
performance optimised for switch applications.
The FMS2024 is developed for the broadband
communications,
instrumentation
and
electronic warfare markets.
V3
V4
RFO2
TYPICAL APPLICATIONS
•
•
•
•
Broadband communications
Test Instrumentation
Fiber Optics
Electronic warfare (ECM, ESM)
ELECTRICAL SPECIFICATIONS (small-signal unless otherwise stated)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Insertion Loss
DC
5 GHz
10 GHz
15 GHz
20 GHz
-1
-1.25
-1.6
-1.6
-1.8
-0.7
-0.85
-1.1
-1.2
-1.35
–
–
–
–
–
dB
dB
dB
dB
dB
Isolation
DC – 20 GHz
–
-37
-34
dB
Input Return Loss
DC – 20 GHz
–
-14
-11
dB
Output Return Loss
DC – 20 GHz
–
-15
-11
dB
P1dB
2 GHz
10 GHz
20 GHz
23
22
22
26
24
24
–
–
–
dBm
Switching speed
20% to 80% RF
80% to 20% RF
50% DC to 80% RF
50% DC to 20% RF
–
–
–
–
20
40
30
50
–
–
–
–
ns
Note 1: TAMBIENT = 25°C, Vctrl = 0V/-5V, ZIN = ZOUT = 50Ω.
Note 2: Sub-10ns 10% to 90% and 90% to 10% switching speeds can be achieved by changing the operating
voltage Vctrl from 0V / -5V to +1V / -5V.
1
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FMS2024
Production Datasheet v3.0
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
ABSOLUTE
MAXIMUM
Max Input Power
Pin
+38dBm
Control Voltage
Vctrl
+1/-10V
Operating Temp
Toper
-40°C to +100°C
Storage Temp
Tstor
-55°C to +150°C
PAD
NAME
DESCRIPTION
PIN
COORDINATES
(µm)
RFIN
RFIN
116,1055
RFO1
RFOUT1
1408,1929
RFO2
RFOUT2
1408,181
V1
V1
645, 1929
V2
V2
395, 1929
V3
V3
395, 181
V4
V4
645, 181
V11
V11
1753,1608
V22
V22
1753,1408
V33
V33
1753,702
V44
V44
1753,502
Note: Exceeding any one of these absolute
maximum ratings may cause permanent
damage to the device.
PAD LAYOUT
Note: Co-ordinates are referenced from the bottom
left hand corner of the die to the centre of bond pad
opening
DIE SIZE (µm)
DIE THICKNESS (µm)
MIN. BOND PAD PITCH
(µm)
MIN. BOND PAD OPENING
(µm x µm )
1910 x 2110
100
150
116 x 116
TRUTH TABLE
CONTROL LINES
RF PATH
V1 OR V11
V2 OR V22
V3 OR V33
V4 OR V44
RFIN-RFO1
RFIN-RFO2
-5V
0V
-5V
0V
On
Off
0V
-5V
0V
-5V
Off
On
0V
-5V
-5V
0V
Off
Off
Note 1: -5V ± 0.2V; 0V ± 0.2V
Note 2: V11, V22, V33 and V44 are alternative control lines to V1, V2, V3 and V4 respectively
2
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FMS2024
Production Datasheet v3.0
TYPICAL MEASURED PERFORMANCE ON WAFER:
Note: Measurement conditions VCTRL= -5V (low) & 0V (high), TAMBIENT = 25°C unless otherwise stated
Isolation
0.00
0.00
-0.20
-10.00
-0.40
-20.00
S21 (dB)
S21 (dB)
Insertion Loss
-0.60
-0.80
-30.00
-40.00
-50.00
-1.00
-60.00
-1.20
-70.00
-80.00
-1.40
0
2
4
6
8
10
12
14
16
18
0
20
2
4
6
Input Return Loss
10
12
14
16
18
20
14
16
18
20
Output Return Loss
0.00
0.00
-5.00
-5.00
-10.00
-10.00
S22 (dB)
S11 (dB)
8
Frequency (GHz)
Frequency (GHz)
-15.00
-15.00
-20.00
-25.00
-30.00
-20.00
-35.00
-25.00
-40.00
-45.00
-30.00
0
2
4
6
8
10
12
14
16
18
0
20
2
4
6
8
10
12
Frequency (GHz)
Frequency (GHz)
3
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FMS2024
Production Datasheet v3.0
TYPICAL MEASURED PERFORMANCE ON WAFER OVER TEMPERATURE:
Note: Measurement conditions VCTRL= -5V (low) & 0V (high)
TAMBIENT = 25°C
TCOLD = -40°C
THOT = +85°C
Isolation
0.10
0.00
-0.10
-10.00
-0.30
-20.00
-0.50
-30.00
S21 (dB)
S21 (dB)
Insertion Loss
-0.70
-0.90
-40.00
-50.00
-1.10
-60.00
-1.30
-70.00
-80.00
-1.50
0
2
4
6
8
10
12
14
16
18
0
20
2
4
6
10
12
14
16
18
20
14
16
18
20
Output Return Loss
Input Return Loss
0.00
0.00
-5.00
-5.00
-10.00
-10.00
S22 (dB)
S11 (dB)
8
Frequency (GHz)
Frequency (GHz)
-15.00
-20.00
-15.00
-20.00
-25.00
-30.00
-35.00
-25.00
-40.00
-30.00
-45.00
0
2
4
6
8
10
12
14
16
18
20
0
2
4
6
Frequency (GHz)
8
10
12
Frequency (GHz)
4
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
FMS2024
Production Datasheet v3.0
PREFERRED ASSEMBLY INSTRUCTIONS:
HANDLING
PRECAUTIONS:
GaAs devices are fragile and should be
handled with great care. Specially designed
collets should be used where possible.
To avoid damage to the devices care should
be exercised during handling.
Proper
Electrostatic Discharge (ESD) precautions
should be observed at all stages of storage,
handling, assembly, and testing.
These
devices should be treated as Class 1A (250500 V) as defined in JEDEC Standard No. 22A114. Further information on ESD control
measures can be found in MIL-STD-1686 and
MIL-HDBK-263.
The back of the die is metallised and the
recommended mounting method is by the use
of solder or conductive epoxy. If epoxy is
selected then it should be applied to the
attachment surface uniformly and sparingly to
avoid encroachment of epoxy on to the top
face of the die and ideally should not exceed
half the chip height. For automated dispense
Ablestick LMISR4 is recommended and for
manual dispense Ablestick 84-1 LMI or 84-1
LMIT are recommended. These should be
cured at a temperature of 150°C for 1 hour in
an oven especially set aside for epoxy curing
only. If possible the curing oven should be
flushed with dry nitrogen.
APPLICATION NOTES & DESIGN DATA:
Application Notes and design data including Sparameters are available on request.
DISCLAIMERS:
This part has gold (Au) bond pads requiring
the use of gold (99.99% pure) bondwire. It is
recommended that 25.4µm diameter gold wire
be used. Thermosonic ball bonding is
preferred. A nominal stage temperature of
150°C and a bonding force of 40g has been
shown to give effective results for 25µm wire.
Ultrasonic energy shall be kept to a minimum.
For this bonding technique, stage temperature
should not be raised above 200°C and bond
force should not be raised above 60g.
Thermosonic
wedge
bonding
and
thermocompression wedge bonding can also
be used to achieve good wire bonds.
This product is not designed for use in any
space based or life sustaining/supporting
equipment.
ORDERING INFORMATION:
PART NUMBER
FMS2024-000
DESCRIPTION
Die in Waffle-pack
(Gel-pak available on request)
Bonds should be made from the die first and
then to the mounting substrate or package.
The physical length of the bondwires should be
minimised especially when making RF or
ground connections.
5
Tel: +44 (0) 1325 301111
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
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