LM3303/LM3403 Quad Operational Amplifiers Y General Description The LM3303 and LM3403 are monolithic quad operational amplifiers consisting of four independent high gain, internally frequency compensated, operational amplifiers designed to operate from a single power supply or dual power supplies over a wide range of voltages. The common mode input range includes the negative supply, thereby eliminating the necessity for external biasing components in many applications. Features Y Y Y Y Y Y Y Applications Y Input common mode voltage range includes ground or negative supply Output voltage can swing to ground or negative supply Connection Diagram Four internally compensated operational amplifiers in a single package Wide power supply range single supply of 3.0V to 36V dual supply of g 1.5V to g 18V Class AB output stage for minimal crossover distortion Short circuit protected outputs High open loop gain 200k LM741 operational amplifier type performance Y Filters Voltage controlled oscillators Order Information 14-Lead DIP and SO-14 Package TL/H/10064 – 1 Device Code Package Code Package Description LM3303J LM3303N J14A N14A Ceramic DIP Molded DIP LM3303M LM3403J LM3403N LM3403M M14A J14A N14A M14A Molded Surface Mount Ceramic DIP Molded DIP Molded Surface Mount Top View Equivalent Circuit ((/4 of Circuit) TL/H/10064 – 2 C1995 National Semiconductor Corporation TL/H/10064 RRD-B30M115/Printed in U. S. A. LM3303/LM3403 Quad Operational Amplifiers February 1995 Absolute Maximum Ratings Internal Power Dissipation (Notes 1, 2) 14L-Ceramic DIP 14L-Molded DIP SO-14 Supply Voltage between V a and Vb If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications. Storage Temperature Range Ceramic DIP Molded DIP and SO-14 Operating Temperature Range Industrial (LM3303) Commercial (LM3403) Lead Temperature Ceramic DIP (Soldering, 60 sec.) Molded DIP and SO-14 (Soldering, 10 sec.) b 65§ C to a 175§ C b 65§ C to a 150§ C Differential Input Voltage (Note 3) Input Voltage ESD Tolerance b 40§ C to a 85§ C 0§ C to a 70§ C 1.36W 1.04W 0.93W 36V g 30V (Vb) b 0.3V to V a (To Be Determined) 300§ C 265§ C LM3303 and LM3403 Electrical Characteristics TA e 25§ C, VCC e g 15V, unless otherwise specified Symbol Parameter LM3303 Conditions Min LM3403 Typ Max Min Units Typ Max VIO Input Offset Voltage 2.0 8.0 2.0 8.0 mV IIO Input Offset Current 30 75 30 50 nA IIB Input Bias Current 200 500 200 500 ZI Input Impedance 0.3 ICC Supply Current VO e 0V, RL e % CMR Common Mode Rejection RS s 10 kX VIR Input Voltage Range PSRR Power Supply Rejection Ratio IOS Output Short Circuit Current (Per Amplifier) (Note 4) AVS Large Signal Voltage Gain VOP Output Voltage Swing TR Transient Response 1.0 2.8 0.3 7.0 1.0 2.8 nA MX 7.0 mA 70 90 70 90 dB a 12V to Vb a 12.5V to Vb a 13V to Vb a 13.5V to Vb V 30 150 30 150 mV/V g 10 g 30 g 45 g 10 g 30 g 45 mA VO e g 10V, RL t 2.0 kX 20 200 20 200 RL e 10 kX RL e 2.0 kX g 12 12.5 g 12 a 13.5 g 10 12 g 10 g 13 V/mV V Rise Time/ Fall Time VO e 50 mV, AV e 1.0, RL e 10 kX 0.3 0.3 ms Overshoot VO e 50 mV, AV e 1.0, RL e 10 kX 5.0 5.0 % BW Bandwidth VO e 50 mV, AV e 1.0, RL e 10 kX 1.0 1.0 MHz SR Slew Rate VI e b10V to a 10V, AV e 1.0 0.6 0.6 V/ms 2 LM3303 and LM3403 (Continued) Electrical Characteristics TA e 25§ C, VCC e g 15V, unless otherwise specified The following specifications apply for b40§ C s TA s a 85§ C for the LM3303, and 0§ C s TA s a 70§ C for the LM3403 Symbol Parameter LM3303 Conditions Min VIO Input Offset Voltage DVIO/DT Input Offset Voltage Temperature Sensitivity IIO Input Offset Current DIIO/DT Input Offset Current Temperature Sensitivity IIB Input Bias Current AVS Large Signal Voltage Gain Output Voltage Swing LM3403 Max Min Typ 10 10 250 50 1000 RL e 2.0 kX mV mV/§ C 200 50 VO e g 10V, Units Max 10 10 RL t 2.0 kX VOP Typ nA pA/§ C 800 nA 15 15 V/mV g 10 g 10 V LM3303 and LM3403 Electrical Characteristics TA e 25§ C, V a e 5.0V, Vb e GND, unless otherwise specified Symbol Parameter LM3303 Conditions Min Typ LM3403 Max Min Units Typ Max VIO Input Offset Voltage 8.0 2.0 8.0 mV IIO Input Offset Current 75 30 50 nA IIB Input Bias Current 500 200 500 nA ICC Supply Current 7.0 2.5 7.0 mA PSRR Power Supply Rejection Ratio 150 mV/V AVS Large Signal Voltage Gain RL t 2.0 kX 20 VOP Output Voltage Swing (Note 5) RL e 10 kX 3.3 3.3 (V a ) b 2.0 (V a ) b 2.0 CS Channel Separation 2.5 150 5.0V s V a s 30V, RL e 10 kX 1.0 Hz s f s 20 kHz (Input Referenced) 200 20 b 120 200 V/mV V b 120 dB Note 1: TJ Max e 150§ C for the Molded DIP and SO-14, and 175§ C for the Ceramic DIP. Note 2: Ratings apply to ambient temperature at 25§ C. Above this temperature, derate the 14L-Ceramic DIP at 9.1 mW/§ C, the 14L-Molded DIP at 8.3 mW/§ C, and the SO-14 at 7.5 mW/§ C. Note 3: For supply voltage less than 30V between V a and V b , the absolute maximum input voltage is equal to the supply voltage. Note 4: Not to exceed maximum package power dissipation. Note 5: Output will swing to ground. 3 Typical Performance Characteristics Open Loop Frequency Response Sine Wave Response Output Voltage vs Frequency Output Swing vs Supply Voltage Input Bias Current vs Temperature Input Bias Current vs Supply Voltage TL/H/10064 – 3 4 Typical Applications Multiple Feedback Bandpass Filter Comparator with Hysteresis TL/H/10064 – 6 VIL e TL/H/10064 – 4 fo e center frequency VIH e BW e Bandwidth R in kX C in mF He Qe R1 R1 a R2 (VOL b VREF) a VREF R1 (VOH b VREF) a VREF R1 a R2 R1 (VOH b VOL) R1 a R2 fo k 10 BW High Impedance Differential Amplifier Q C1 e C2 e 3 R1 e R2 e 1 R3 e 9Q2 b 1 ( Using scaling factors in these expressions. If source impedance is high or varies, filter may be preceded with voltage follower buffer to stabilize filter parameters. Design example: given: Q e 5, fo e 1 kHz Let R1 e R2 e 10 kX then R3 e 9(5)2 b 10 R3 e 215 kX Ce 5 e 1.6 nF 3 Wein Bridge Oscillator TL/H/10064 – 7 VOUT e C(1 a a a b)(V2 b V1) R2 R5 A R6 for best CMRR R7 R1 e R4 R2 e R5 Gain e R6 R5 #1 a 2R1 R3 J e C (1 a a a b) AC Coupled Non-Inverting Amplifier TL/H/10064 – 5 fo e 1 for fo e 1 kHz 2qRC R e 16 kX C e 0.01 mF TL/H/10064 – 9 AV e 1 a R2 R1 AV e 11 (as shown) 5 Typical Applications (Continued) AC Coupled Inverting Amplifier Voltage Reference TL/H/10064 – 10 VO e VO e R1 R1 a R2 # e Va as shown 2 J 1 Va 2 TL/H/10064–8 AV e Rf R1 AV e 10 (as shown) Ground Referencing a Differential Input Signal Pulse Generator TL/H/10064–11 TL/H/10064 – 14 Voltage Controlled Oscillator TL/H/10064 – 12 Note 1: Wide Control Voltage Range: 0V s VCO s 2 (V g 1.5V) 6 Typical Applications (Continued) Function Generator TL/H/10064 – 13 Note 2: f e R1 a R2 R2R1 if R3 e 4CRfR1 R2 a R1 Bi-Quad Filter TL/H/10064 – 15 Qe BW fo Example: fo e 1000 Hz BW e 100 Hz TBP e 1 TN e 1 R e 160 kX R1 e 1.6 MX R2 e 1.6 MX R3 e 1.6 MX C e 0.001 mF where: TBP e Center Frequency Gain TN e Bandpass Notch Gain fo e 1 1 , VREF e VCC 2qRC 2 R1 e QR R2 e R1 TBP R3 e TNR2 C1 e 10 C 7 8 Physical Dimensions inches (millimeters) 14-Lead Ceramic Dual-In-Line Package (J) Order Number LM3303J or LM3403J NS Package Number J14A 14-Lead Molded Surface Mount (M) Order Number LM3403M NS Package Number M14A 9 LM3303/LM3403 Quad Operational Amplifiers Physical Dimensions inches (millimeters) (Continued) 14-Lead Molded Dual-In-Line Package (N) Order Number LM3303N or LM3403N NS Package Number N14A LIFE SUPPORT POLICY NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION. 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