, {Jnc.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Picoampere diode
BAV45
FEATURES
DESCRIPTION
• Extremely low leakage current:
max. 5 pA
Silicon diode in a metal TO-18 can. It has an extremely low leakage current over
a wide temperature range combined with a low capacitance and is not sensitive
to light.
• Low diode capacitance
• Light insensitive.
APPLICATION
a
• Clamping
I
• Holding
H—
k
• Peak follower
MAM207
• Time delay circuits
• Logarithmic amplifiers
Fig.1
Simplified outline (SOT18/15; TO-1 8 except for the two leads)
and symbol.
• Protection of insulated gate
field-effect transistors.
CAUTION
Handle the device with care whilst soldering into the circuit. The extremely
low leakage current can only be guaranteed when the bottom is free from
solder flux or other contaminations.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
-
35
V
VR
continuous reverse voltage
-
20
V
IF
continuous forward current
-
50
mA
IFRM
repetitive peak forward current
-
100
mA
Plot
total power dissipation
-
200
mW
see Fig. 2
Tamb = 25 °C; note 1
Tstg
storage temperature
-65
Tj
junction temperature
-
+125
°C
125
°C
Note
1.
Device mounted on a FR4 printed-circuit board.
N.I .Semi-Conductors reserves I he right to change test conditions, parameter limit* :md packuge dimensions without notice
Information furnished by NJ Scmi-t unductors n believed to he holh accurate awl reliable .11 the time of going to press. However NI
Semi-Conductors .I-.MIIIICS no responsibility fiir ;iny emirs iir omissions Jiscuvured in its u>e N.I Seini-Coiiilui.li rs cntounaes
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BAV45
Picoampere diode
ELECTRICAL CHARACTERISTICS
TJ = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
MAX.
CONDITIONS
VF
forward voltage
IF = 10 mA; see Figs 3 and 4
IR
reverse current
see Fig. 5
VR = 5 V
VR = 5 V; TJ = 80 °C
VR = 20 V
cd
diode capacitance
f = 1 MHz; VR = 0; see Fig.6
trr
reverse recovery time
when switched from IF = 10 mA to IR = 10 mA;
RL = 100 ii; measured at IR = 1 mA; see Fig. 7
UNIT
1
V
5
PA
250
PA
10
PA
1.3
600
pF
ns
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
Rth j-a
thermal resistance from junction to ambient; note 1
VALUE
UNIT
500
K/W
Note
1.
Device mounted on a FR4 printed-circuit board.
Picoampere diode
BAV45
PACKAGE OUTLINE
_ 00.51
~r max
0*
48
max
5.3 max
-12.7 min-
5.8 max
Dimensions in mm.
Fig.8 SOT18/15; TO-18 (except for the two leads).