MMDTA42 Lead-free Green DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features · · · · Epitaxial Planar Die Construction A SOT-26 Ideal for Medium Power Amplification and Switching Lead Free/RoHS Compliant (Note 3) B C "Green" Device, Note 4 and 5 Mechanical Data · · · · · · · · · H Case: SOT-26 Case Material: Molded Plastic, "Green" Molding Compound, Note 5. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C K M J D F L Terminal Connections: See Diagram Terminals: Finish - Matte Tin Solderable per MIL-STD-202, Method 208 Q2 Lead Free Plating (Matte Tin Finish annealed over Copper leadframe). Q1 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D ¾ ¾ 0.95 F ¾ ¾ 0.55 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 a 0° 8° ¾ All Dimensions in mm Marking (See Page 2): K3M Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approximate) Maximum Ratings @ TA = 25°C unless otherwise specified Symbol Value Unit Collector-Base Voltage Characteristic VCBO 300 V Collector-Emitter Voltage VCEO 300 V Emitter-Base Voltage VEBO 6.0 V Collector Current (Note 1) (Note 2) IC 500 mA Power Dissipation (Note 1) Pd 300 mW RqJA 417 °C/W Tj, TSTG -55 to +150 °C Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: 1. 2. 3. 4. 5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. When operated under collector-emitter saturation conditions within the safe operating area defined by the thermal resistance rating (RqJA), power dissipation rating (Pd) and power derating curve (figure 1). No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com./products/lead_free/index.php. Product manufactured with Date Code 0609 (week 9, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date Code 0609 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. DS30438 Rev. 4 - 2 1 of 4 www.diodes.com MMDTA42 ã Diodes Incorporated Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Symbol Min Max Unit Test Condition Collector-Base Breakdown Voltage V(BR)CBO 300 ¾ V IC = 100mA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO 300 ¾ V IC = 1.0mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 6.0 ¾ V IE = 100mA, IC = 0 Collector Cutoff Current ICBO ¾ 100 nA VCB = 200V, IE = 0 Collector Cutoff Current IEBO ¾ 100 nA VCE = 6.0V, IC = 0 hFE 25 40 40 ¾ ¾ IC = 1.0mA, VCE = 10V IC = 10mA, VCE = 10V IC = 30mA, VCE = 10V Collector-Emitter Saturation Voltage VCE(SAT) ¾ 0.5 V IC = 20mA, IB = 2.0mA Base-Emitter Saturation Voltage VBE(SAT) ¾ 0.9 V IC = 20mA, IB = 2.0mA Ccb ¾ 3.0 pF VCB = 20V, f = 1.0MHz, IE = 0 fT 50 ¾ MHz OFF CHARACTERISTICS (Note 6) ON CHARACTERISTICS (Note 6) DC Current Gain SMALL SIGNAL CHARACTERISTICS Output Capacitance Current Gain-Bandwidth Product Notes: 6. Short duration test pulse used to minimize self-heating effect. Ordering Information Notes: VCE = 20V, IC = 10mA, f = 100MHz (Note 5 & 7) Device Packaging Shipping MMDTA42-7-F SOT-26 3000/Tape & Reel 5. Product manufactured with Date Code 0609 (week 9, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date Code 0609 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants. 7. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K3M K3M = Product Type Marking Code YM = Date Code Marking Y = Year ex: P = 2003 M = Month ex: 9 = September Year 2004 2005 2006 2007 2008 2009 2010 2011 2012 Code R S T U V W X Y Z K3M YM YM Date Code Key Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D DS30438 Rev. 4 - 2 2 of 4 www.diodes.com MMDTA42 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 2.0 PD, POWER DISSIPATION (mW) 350 300 250 200 150 100 50 IC IB = 10 1.8 1.6 TA = 150°C 1.4 1.2 1.0 TA = 25°C 0.8 0.6 0.4 TA = -50°C 0.2 0 0 0 25 50 75 100 125 150 175 10 1 200 IC, COLLECTOR CURRENT (mA) Fig. 2, Collector Emitter Saturation Voltage vs. Collector Current TA, AMBIENT TEMPERATURE (°C) Fig. 1, Max Power Dissipation vs Ambient Temperature 1.0 10000 VBE(ON), BASE EMITTER VOLTAGE (V) VCE = 5V hFE, DC CURRENT GAIN 1000 100 1000 TA = 150°C 100 TA = -50°C TA = 25°C 10 1 10 1 100 1000 VCE = 5V 0.9 0.8 TA = -50°C 0.7 0.6 TA = 25°C 0.5 0.4 0.3 TA = 150°C 0.2 0.1 IC, COLLECTOR CURRENT (mA) Fig. 3, DC Current Gain vs Collector Current 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4, Base Emitter Voltage vs Collector Current fT, GAIN BANDWIDTH PRODUCT (MHz) 100 VCE = 5V 10 1 10 1 IC, COLLECTOR CURRENT (mA) Fig. 5, Gain Bandwidth Product vs Collector Current DS30438 Rev. 4 - 2 3 of 4 www.diodes.com MMDTA42 IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated. DS30438 Rev. 4 - 2 4 of 4 www.diodes.com MMDTA42