IRF IRLH6224PBF Compatible with existing surface mount technique Datasheet

IRLH6224PbF
HEXFET® Power MOSFET
VDS
20
± 12
Vgs max
RDS(on) max
V
V
3.0
(@VGS = 4.5V)
(@VGS = 2.5V)
4.0
Qg typ
44
ID
80
(@Tc(Bottom) = 25°C)
mΩ
nC
PQFN 5X6 mm
i
A
Applications
• Battery Protection Switch
Features and Benefits
Features
Low Thermal Resistance to PCB (< 2.4°C/W)
100% Rg tested
Low Profile (<1.2mm)
Benefits
Enable better thermal dissipation
Increased Reliability
results in Increased Power Density
⇒
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Orderable part number
Package Type
IRLH6224TRPBF
IRLH6224TR2PBF
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Standard Pack
Form
Quantity
PQFN 5mm x 6mm
Tape and Reel
4000
PQFN 5mm x 6mm
Tape and Reel
400
Note
EOL notice # 259
Absolute Maximum Ratings
Max.
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
ID @ TC = 25°C
IDM
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
Power Dissipation
Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
g
g
c
g
20
± 12
28
22
105
67
80
hi
h
i
400
3.6
52
0.029
-55 to + 150
Units
V
A
W
W/°C
°C
Notes  through † are on page 9
1
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IRLH6224PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max. Units
gfs
Qg
Qg
Q gs1
Q gs2
Q gd
Q godr
Qsw
Qoss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Q gd)
Output Charge
20
–––
–––
–––
0.5
–––
–––
–––
–––
–––
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
5.0
2.3
3.2
0.8
-4.2
–––
–––
–––
–––
–––
86
44
3.8
4.7
8.5
27
13
30
–––
V
VGS = 0V, ID = 250μA
––– mV/°C Reference to 25°C, ID = 1.0mA
VGS = 4.5V, ID = 20A
3.0
mΩ
VGS = 2.5V, ID = 16A
4.0
1.1
V
VDS = VGS, ID = 50μA
––– mV/°C
VDS = 16V, VGS = 0V
1
μA
VDS = 16V, VGS = 0V, TJ = 125°C
150
VGS = 12V
100
nA
-100
VGS = -12V
VDS = 10V, ID = 20A
–––
S
–––
nC VGS = 10V, VDS = 15V, ID = 20A
–––
VDS = 10V
–––
–––
VGS = 4.5V
nC
–––
ID = 20A
–––
–––
–––
nC VDS = 16V, VGS = 0V
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
2.0
9.4
23
67
36
–––
–––
–––
–––
–––
–––
–––
–––
BVDSS
Δ ΒVDSS /Δ TJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
VGS(th)
Δ VGS(th)
IDSS
IGSS
3710
1050
770
Conditions
e
e
Ω
ns
pF
VDD = 15V, VGS = 4.5V
ID = 20A
RG=1.8Ω
VGS = 0V
VDS = 10V
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Avalanche Current
EAS
IAR
c
Max.
125
20
Typ.
–––
–––
d
Units
mJ
A
Diode Characteristics
Parameter
Min.
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
VSD
trr
Qrr
ton
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Typ. Max. Units
–––
–––
67
–––
–––
400
A
c
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
TJ = 25°C, IS = 20A, VGS = 0V
TJ = 25°C, IF = 20A, VDD = 15V
di/dt = 300A/μs
–––
–––
1.2
V
–––
38
57
ns
–––
82
125
nC
Time is dominated by parasitic Inductance
S
e
e
Thermal Resistance
RθJC (Bottom)
RθJC (Top)
RθJA
RθJA (<10s)
2
f
f
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
Parameter
g
g
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Typ.
–––
–––
–––
–––
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Max.
2.4
34
35
22
Units
°C/W
July 7, 2015
IRLH6224PbF
1000
1000
100
BOTTOM
10
1.50V
1
100
BOTTOM
1.50V
10
≤60μs PULSE WIDTH
≤60μs PULSE WIDTH
Tj = 25°C
Tj = 150°C
1
0.1
0.1
1
10
0.1
100
Fig 1. Typical Output Characteristics
10
100
Fig 2. Typical Output Characteristics
1.6
RDS(on) , Drain-to-Source On Resistance
(Normalized)
1000
ID, Drain-to-Source Current(A)
1
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
100
TJ = 150°C
10
TJ = 25°C
1
VDS = 10V
≤60μs PULSE WIDTH
ID = 20A
VGS = 10V
1.4
1.2
1.0
0.8
0.6
0.1
0
1
2
3
-60 -40 -20 0
4
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
14
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
10000
Ciss
Coss
Crss
1000
20 40 60 80 100 120 140 160
TJ , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
VGS
10V
7.00V
4.50V
2.50V
2.30V
2.00V
1.75V
1.50V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
10V
7.00V
4.50V
2.50V
2.30V
2.00V
1.75V
1.50V
ID= 20A
12
VDS= 16V
VDS= 10V
VDS= 4.0V
10
8
6
4
2
0
100
0
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
3
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20
40
60
80
100
120
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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IRLH6224PbF
10000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
TJ = 150°C
100
TJ = 25°C
10
OPERATION IN THIS AREA
LIMITED BY RDS(on)
1000
10msec
100
10
Limited by Package
i
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
VGS = 0V
DC
0.1
1.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1
1.8
1
10
100
VDS, Drain-to-Source Voltage (V)
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
1.6
120
i
VGS(th), Gate threshold Voltage (V)
Limited By Package
100
ID, Drain Current (A)
100μsec
80
60
40
20
0
25
50
75
100
125
150
1.4
1.2
1.0
0.8
ID = 50μA
0.6
ID = 1.0mA
ID = 250μA
ID = 1.0A
0.4
0.2
-75 -50 -25
TC, Case Temperature (°C)
0
25
50
75 100 125 150
TJ , Temperature ( °C )
Fig 9. Maximum Drain Current vs.
Case (Bottom) Temperature
Fig 10. Threshold Voltage vs. Temperature
Thermal Response ( ZthJC )
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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EAS , Single Pulse Avalanche Energy (mJ)
RDS(on), Drain-to -Source On Resistance (mΩ)
IRLH6224PbF
ID = 20A
6
4
TJ = 125°C
2
TJ = 25°C
0
500
ID
5.7A
9.3A
BOTTOM 20A
TOP
400
300
200
100
0
0
2
4
6
8
10
12
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy vs. Drain Current
V(BR)DSS
tp
15V
DRIVER
L
VDS
D.U.T
RG
+
V
- DD
IAS
20V
A
Fig 14a. Unclamped Inductive Test Circuit
VDS
VGS
RG
RD
Fig 14b. Unclamped Inductive Waveforms
VDS
90%
D.U.T.
+
-VDD
V10V
GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
Fig 15a. Switching Time Test Circuit
5
I AS
0.01Ω
tp
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10%
VGS
td(on)
tr
td(off)
tf
Fig 15b. Switching Time Waveforms
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IRLH6224PbF
D.U.T
Driver Gate Drive
ƒ
+
‚
-
-
„
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+

RG
•
•
•
•
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D=
Period
P.W.
+
V DD
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
-
Body Diode
VDD
Forward Drop
Inductor Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
L
DUT
0
1K
VCC
S
Vgs(th)
Qgs1 Qgs2
Fig 17. Gate Charge Test Circuit
6
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Qgd
Qgodr
Fig 18. Gate Charge Waveform
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IRLH6224PbF
PQFN 5x6 Outline "E" Package Details
PQFN 5x6 Outline "G" Package Details
For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136:
http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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IRLH6224PbF
PQFN 5x6 Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
XXXX
XYWWX
XXXXX
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
PIN 1
IDENTIFIER
PART NUMBER
(“4 or 5 digits”)
MARKING CODE
(Per Marking Spec)
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
PQFN 5x6 Tape and Reel
REEL DIMENSIONS
TAPE DIMENSIONS
DES CRIPTION
CODE
Ao
Dimension des ign to accommodate the component width
Bo
Dimension des ign to accommodate the component lenght
Ko
Dimension des ign to accommodate the component thickness
Overall width of the carrier tape
Pitch between s ucces s ive cavity centers
W
P1
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Note: All dimens ion are nominal
Package
T ype
Reel
Diameter
(Inch)
QT Y
Reel
Width
W1
(mm)
Ao
(mm)
Bo
(mm)
Ko
(mm)
P1
(mm)
W
(mm)
Pin 1
Quadrant
5 X 6 PQF N
13
4000
12.4
6.300
5.300
1.20
8.00
12
Q1
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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IRLH6224PbF
Qualification information†
Indus trial ††
Qualification level
(per JE DE C JE S D47F
Moisture Sensitivity Level
††
†††
guidelines )
MS L1
PQFN 5mm x 6mm
(per JE DE C J-S TD-020D††† )
RoHS compliant
†
†††
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 0.63mH, RG = 50Ω, IAS = 20A.
ƒ Pulse width ≤ 400μs; duty cycle ≤ 2%.
„ Rθ is measured at TJ of approximately 90°C.
When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
† Calculated continuous current based on maximum allowable junction temperature.
‡ Package is limited to 80A by die-source to lead-frame bonding technology
Revision History
Date
5/12/2014
6/2/2015
7/7/2015
Comment
• Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #259)
• Updated Tape and Reel on page 8.
• Updated data sheet based on corporate template.
• Updated package outline for “option E” and added package outline for “option G” on page 7.
• Updated "IFX" logo on page 1 & 9.
• Updated tape and reel on page 8.
• Corrected package outline for “option E” on page 7.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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