ON NCV8402STT1G Self-protected low side driver Datasheet

NCV8402, NCV8402A
Self-Protected Low Side
Driver with Temperature
and Current Limit
NCV8402/A is a three terminal protected Low−Side Smart Discrete
device. The protection features include overcurrent, overtemperature,
ESD and integrated Drain−to−Gate clamping for overvoltage
protection. This device offers protection and is suitable for harsh
automotive environments.
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V(BR)DSS
(Clamped)
RDS(ON) TYP
ID MAX
42 V
165 mW @ 10 V
2.0 A*
Features
•
•
•
•
•
•
•
•
•
•
Short−Circuit Protection
Thermal Shutdown with Automatic Restart
Overvoltage Protection
Integrated Clamp for Inductive Switching
ESD Protection
NCV8402AMNWT1G − Wettable Flanks Product
dV/dt Robustness
Analog Drive Capability (Logic Level Input)
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
*Max current limit value is dependent on input
condition.
MARKING DIAGRAMS
DRAIN
4
4
1
2
SOT−223
CASE 318E
STYLE 3
3
AYW
xxxxx G
G
1
2
3
SOURCE
GATE
DRAIN
1
xxxxx
AYWW
G
1
xxxxx
AYWW
G
DFN6
CASE 506AX
1
Typical Applications
• Switch a Variety of Resistive, Inductive and Capacitive Loads
• Can Replace Electromechanical Relays and Discrete Circuits
• Automotive / Industrial
DFN6 (WF)
CASE 506DK
1
A
= Assembly Location
Y
= Year
W or WW = Work Week
xxxxx = V8402 or 8402A
G
= Pb−Free Package
Drain
Gate
Input
Overvoltage
Protection
(Note: Microdot may be in either location)
ESD Protection
Temperature
Limit
DFN6 PACKAGE PIN DESCRIPTION
Current
Limit
G NC NC
1 2 3
Current
Sense
7
EPAD
Source
6
S
5
S
4
S
Pin #
Symbol
Description
1
2
3
4
5
6
7
G
NC
NC
S*
S*
S*
EPAD
Gate Input
No Connect
No Connect
Source
Source
Source
Drain
*Pins 4, 5, 6 are internally shorted together.
It is recommended to short these pins externally.
ORDERING INFORMATION
See detailed ordering and shipping information on page 11 of
this data sheet.
© Semiconductor Components Industries, LLC, 2016
November, 2016 − Rev. 21
1
Publication Order Number:
NCV8402/D
NCV8402, NCV8402A
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage Internally Clamped
Drain−to−Gate Voltage Internally Clamped
(RG = 1.0 MW)
Gate−to−Source Voltage
Continuous Drain Current
Symbol
Value
Unit
VDSS
42
V
VDGR
42
V
VGS
"14
V
ID
Internally Limited
Total Power Dissipation − SOT−223 Version
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
@ TS = 25°C)
PD
1.1
1.7
8.9
W
Total Power Dissipation − DFN Version
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
@ TS = 25°C)
PD
0.76
1.7
8.9
W
Maximum Continuous Drain Current − SOT−223 Version
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
@ TS = 25°C)
ID
2.37
2.98
6.75
A
Maximum Continuous Drain Current − DFN Version
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
@ TS = 25°C)
ID
1.98
3.02
6.75
A
SOT223 Junction−to−Ambient Steady State (Note 1)
SOT223 Junction−to−Ambient Steady State (Note 2)
SOT223 Junction−to−Soldering Point Steady State
RqJA
RqJA
RqJS
114
72
14
°C/W
DFN Junction−to−Ambient Steady State (Note 1)
DFN Junction−to−Ambient Steady State (Note 2)
DFN Junction−to−Soldering Point Steady State
RqJA
RqJA
RqJS
163
70
14
EAS
150
mJ
VLD
55
V
Operating Junction Temperature
TJ
−40 to 150
°C
Storage Temperature
Tstg
−55 to 150
°C
Thermal Resistance
Single Pulse Drain−to−Source Avalanche Energy
(VDD = 32 V, VG = 5.0 V, IPK = 1.0 A, L = 300 mH, RG(ext) = 25 W)
(VGS = 0 and 10 V, RI = 2.0 W, RL = 9.0 W, td = 400 ms)
Load Dump Voltage
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Surface−mounted onto min pad FR4 PCB, (2 oz. Cu, 0.06″ thick).
2. Surface−mounted onto 2″ sq. FR4 board (1″ sq., 1 oz. Cu, 0.06″ thick).
+
ID
DRAIN
IG
+
VDS
GATE
SOURCE
VGS
−
−
Figure 1. Voltage and Current Convention
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2
NCV8402, NCV8402A
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Test Condition
Symbol
Min
Typ
Max
Unit
VGS = 0 V, ID = 10 mA, TJ = 25°C
V(BR)DSS
42
46
55
V
40
45
55
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(Note 3)
VGS = 0 V, ID = 10 mA, TJ = 150°C
(Note 5)
Zero Gate Voltage Drain Current
VGS = 0 V, VDS = 32 V, TJ = 25°C
IDSS
0.25
4.0
mA
Zero Gate Voltage Drain Current
VGS = 0 V, VDS = 32 V, TJ = 150°C
(Note 5)
IDSS
1.1
20
mA
VDS = 0 V, VGS = 5.0 V
IGSSF
50
100
mA
VGS = VDS, ID = 150 mA
VGS(th)
1.8
2.2
V
Gate Input Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Gate Threshold Temperature Coefficient
VGS = 10 V, ID = 1.7 A, TJ = 25°C
Static Drain−to−Source On−Resistance
1.3
VGS(th)/TJ
4.0
RDS(on)
−mV/°C
165
200
VGS = 10 V, ID = 1.7 A, TJ = 150°C
(Note 5)
305
400
VGS = 5.0 V, ID = 1.7 A, TJ = 25°C
195
230
VGS = 5.0 V, ID = 1.7 A, TJ = 150°C
(Note 5)
360
460
VGS = 5.0 V, ID = 0.5 A, TJ = 25°C
190
230
VGS = 5.0 V, ID = 0.5 A, TJ = 150°C
(Note 5)
350
460
Source−Drain Forward On Voltage
VGS = 0 V, IS = 7.0 A
mW
VSD
1.0
V
Turn−On Delay Time (10% VIN to 90%
ID)
td(on)
25
30
ms
Turn−On Rise Time (10% ID to 90% ID)
trise
120
200
ms
td(off)
20
25
ms
SWITCHING CHARACTERISTICS (Note 5)
Turn−Off Delay Time (90% VIN to 10%
ID)
VGS = 10 V, VDD = 12 V,
ID = 2.5 A, RL = 4.7 W
tfall
50
70
ms
Slew−Rate ON (70% to 50% VDD)
−dVDS/dtON
0.8
1.2
V/ms
Slew−Rate OFF (50% to 70% VDD)
dVDS/dtOFF
0.3
0.5
V/ms
3.7
4.3
5.0
A
VDS = 10 V, VGS = 5.0 V, TJ = 150°C
(Note 5)
2.3
3.0
3.7
VDS = 10 V, VGS = 10 V, TJ = 25°C
4.2
4.8
5.4
VDS = 10 V, VGS = 10 V, TJ = 150°C
(Note 5)
2.7
3.6
4.5
150
175
200
Turn−Off Fall Time (90% ID to 10% ID)
SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 4)
Current Limit
VDS = 10 V, VGS = 5.0 V, TJ = 25°C
Temperature Limit (Turn−off)
Thermal Hysteresis
Temperature Limit (Turn−off)
Thermal Hysteresis
ILIM
VGS = 5.0 V (Note 5)
TLIM(off)
VGS = 5.0 V
DTLIM(on)
VGS = 10 V (Note 5)
TLIM(off)
VGS = 10 V
DTLIM(on)
VGS = 5 V ID = 1.0 A
IGON
°C
15
150
165
185
15
GATE INPUT CHARACTERISTICS (Note 5)
Device ON Gate Input Current
VGS = 10 V ID = 1.0 A
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Fault conditions are viewed as beyond the normal operating range of the part.
5. Not subject to production testing.
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3
50
400
mA
NCV8402, NCV8402A
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Test Condition
Symbol
VGS = 5 V, VDS = 10 V
IGCL
Min
Typ
Max
Unit
GATE INPUT CHARACTERISTICS (Note 5)
Current Limit Gate Input Current
0.05
VGS = 10 V, VDS = 10 V
Thermal Limit Fault Gate Input Current
VGS = 5 V, VDS = 10 V
mA
0.4
IGTL
0.15
VGS = 10 V, VDS = 10 V
mA
0.7
ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5)
Electro−Static Discharge Capability
Human Body Model (HBM)
Machine Model (MM)
ESD
4000
V
400
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Fault conditions are viewed as beyond the normal operating range of the part.
5. Not subject to production testing.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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4
NCV8402, NCV8402A
TYPICAL PERFORMANCE CURVES
10
Emax (mJ)
IL(max) (A)
1000
TJstart = 25°C
100
TJstart = 25°C
TJstart = 150°C
TJstart = 150°C
1
10
10
10
100
100
L (mH)
L (mH)
Figure 2. Single Pulse Maximum Switch−off
Current vs. Load Inductance
Figure 3. Single Pulse Maximum Switching
Energy vs. Load Inductance
1000
10
1
Emax (mJ)
IL(max) (A)
TJstart = 25°C
TJstart = 150°C
0.1
TJstart = 25°C
100
TJstart = 150°C
10
1
10
TIME IN CLAMP (ms)
1
Figure 4. Single Pulse Maximum Inductive
Switch−off Current vs. Time in Clamp
Figure 5. Single Pulse Maximum Inductive
Switching Energy vs. Time in Clamp
5
8
8V
TA = 25°C
7
10 V
VDS = 10 V
6V
−40°C
25°C
4
6
100°C
5V
4V
3
ID (A)
ID (A)
5
3.5 V
4
3
2
3V
1
VGS = 2.5 V
0
10
TIME IN CLAMP (ms)
150°C
2
1
0
0
1
2
3
4
5
VDS (V)
1
3
VGS (V)
Figure 6. On−state Output Characteristics
Figure 7. Transfer Characteristics
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5
2
4
5
NCV8402, NCV8402A
TYPICAL PERFORMANCE CURVES
350
400
150°C, VGS = 5 V
150°C, ID = 0.5 A
300
RDS(on) (mW)
200
RDS(on) (mW)
150°C, ID = 1.7 A
300
100°C, ID = 1.7 A
100°C, ID = 0.5 A
25°C, ID = 1.7 A
25°C, ID = 0.5 A
150°C, VGS = 10 V
250
100°C, VGS = 5 V
100°C, VGS = 10 V
200
25°C, VGS = 5 V
150
25°C, VGS = 10 V
100
−40°C, ID = 0.5 A
−40°C, ID = 1.7 A
0
4
5
−40°C, VGS = 5 V
100
−40°C, VGS = 10 V
6
7
8
9
50
0.2
10
VGS (V)
0.4
0.6
1
1.2
ID (A)
Figure 8. RDS(on) vs. Gate−Source Voltage
Figure 9. RDS(on) vs. Drain Current
1.4
1.6
1.8
2
8
2
ID = 1.7 A
−40°C
7
1.75
VGS = 5 V
1.5
6
ILIM (A)
RDS(on) (NORMIALZIZED)
0.8
1.25
1
25°C
5
100°C
4
VGS = 10 V
150°C
3
0.75
VDS = 10 V
0.5
−40
2
−20
0
20
40
60
T (°C)
80
100
120
140
5
6
7
8
9
10
VGS (V)
Figure 10. Normalized RDS(on) vs. Temperature
Figure 11. Current Limit vs. Gate−Source
Voltage
10
8
VGS = 0 V
7
VGS = 10 V
IDSS (mA)
6
ILIM (A)
150°C
1
5
0.1
100°C
0.01
4
25°C
VGS = 5 V
−40°C
0.001
3
VDS = 10 V
2
−40 −20 0
20
40
60
80
100
120
0.0001
10
140
15
20
25
30
35
TJ (°C)
VDS (V)
Figure 12. Current Limit vs. Junction
Temperature
Figure 13. Drain−to−Source Leakage Current
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6
40
NCV8402, NCV8402A
TYPICAL PERFORMANCE CURVES
1.1
ID = 150 mA
VGS = VDS
1.1
1
1
VSD (V)
NORMALIZED VGS(th) (V)
1.2
0.9
−40°C
0.9
25°C
0.8
100°C
0.7
0.8
150°C
0.7
0.6
0.6
−40
0.5
VGS = 0 V
−20
0
20
40
60
80
100
120
1
140
5
6
7
8
9
Figure 15. Source−Drain Diode Forward
Characteristics
10
1
ID = 2.5 A
VDD = 12 V
RG = 0 W
100
td(off)
tf
50
tr
td(on)
3
4
5
6
7
VGS (V)
8
9
10
DRAIN−SOURCE VOLTAGE SLOPE (V/ms)
TIME (ms)
4
Figure 14. Normalized Threshold Voltage vs.
Temperature
150
ID = 2.5 A
VDD = 12 V
RG = 0 W
0.8
0.6
−dVDS/dt(on)
0.4
dVDS/dt(off)
0.2
0
3
Figure 16. Resistive Load Switching Time vs.
Gate−Source Voltage
4
5
6
7
VGS (V)
8
9
10
Figure 17. Resistive Load Switching
Drain−Source Voltage Slope vs. Gate−Source
Voltage
100
td(off), (VGS = 10 V)
75
tr, (VGS = 5 V)
tf, (VGS = 10 V)
50
tf, (VGS = 5 V)
td(off), (VGS = 5 V)
25
tr, (VGS = 10 V)
0
0
400
td(on), (VGS = 5 V)
td(on), (VGS = 10 V)
800
1200
1600
2000
RG (W)
DRAIN−SOURCE VOLTAGE SLOPE (V/ms)
1
ID = 2.5 A
VDD = 12 V
TIME (ms)
3
IS (A)
200
0
2
T (°C)
−dVDS/dt(on), VGS = 10 V
0.8
0.6
0.4
dVDS/dt(off), VGS = 5 V
0.2
dVDS/dt(off), VGS = 10 V
−dVDS/dt(on), VGS = 5 V
ID = 2.5 A
VDD = 12 V
0
0
Figure 18. Resistive Load Switching Time vs.
Gate Resistance
500
1000
RG (W)
1500
2000
Figure 19. Drain−Source Voltage Slope during
Turn On and Turn Off vs. Gate Resistance
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7
NCV8402, NCV8402A
TYPICAL PERFORMANCE CURVES
100
RqJA 788 mm2 °C/W
50% Duty Cycle
10
20%
10%
5%
2%
1
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
100
1000
PULSE WIDTH (sec)
Figure 20. Transient Thermal Resistance − SOT−223 Package
100
RqJA 788 mm2 °C/W
50% Duty Cycle
10
20%
10%
5%
2%
1
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
PULSE WIDTH (sec)
Figure 21. Transient Thermal Resistance − DFN Package
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8
10
NCV8402, NCV8402A
TEST CIRCUITS AND WAVEFORMS
RL
VIN
+
D
RG
VDD
G DUT
−
S
IDS
Figure 22. Resistive Load Switching Test Circuit
90%
10%
VIN
VDS
tOFF
tON
90%
10%
90%
10%
IDS
Figure 23. Resistive Load Switching Waveforms
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9
NCV8402, NCV8402A
TEST CIRCUITS AND WAVEFORMS
L
VDS
VIN
D
RG
+
VDD
G DUT
−
S
tp
IDS
Figure 24. Inductive Load Switching Test Circuit
5V
VIN
0V
Tav
Tp
V(BR)DSS
Ipk
VDD
VDS
VDS(on)
IDS
0
Figure 25. Inductive Load Switching Waveforms
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10
NCV8402, NCV8402A
Table 1. ORDERING INFORMATION
Package
Shipping†
SOT−223
(Pb−Free)
1000 / Tape & Reel
SOT−223
(Pb−Free)
4000 / Tape & Reel
DFN6
(Pb−Free)
2000 / Tape & Reel
DFN6
(Pb−Free, Wettable Flank)
3000 / Tape & Reel
Device
NCV8402STT1G
NCV8402ASTT1G
NCV8402STT3G
NCV8402ASTT3G
NCV8402AMNT2G
NCV8402AMNWT1G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
D
b1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
4
HE
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
HE
E
1
2
3
b
e1
e
0.08 (0003)
A1
C
q
A
q
L
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
0°
SOLDERING FOOTPRINT
3.8
0.15
2.0
0.079
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
SCALE 6:1
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11
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0°
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
−−−
0.069
0.276
−
STYLE 3:
PIN 1.
2.
3.
4.
L1
2.3
0.091
MILLIMETERS
NOM
MAX
1.63
1.75
0.06
0.10
0.75
0.89
3.06
3.20
0.29
0.35
6.50
6.70
3.50
3.70
2.30
2.40
0.94
1.05
−−−
−−−
1.75
2.00
7.00
7.30
10°
−
mm Ǔ
ǒinches
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
0.078
0.287
10°
GATE
DRAIN
SOURCE
DRAIN
NCV8402, NCV8402A
PACKAGE DIMENSIONS
DFN6 3x3.3, 0.95 PITCH
CASE 506AX
ISSUE O
A
D
NOTES:
1. DIMENSIONS AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.25 AND 0.30 mm
FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED PAD
AS WELL AS THE TERMINALS.
B
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
PIN 1
REFERENCE
2X
E
DIM
A
A1
A3
b
D
D2
E
E2
e
K
L
L1
0.15 C
2X
0.15 C
TOP VIEW
0.10 C
A
6X
0.08 C
SEATING
PLANE
(A3)
SIDE VIEW
SOLDERING FOOTPRINT*
C
A1
3.60
D2
4X
6X
1.35
e
L
1
L1
6
6X
0.50
1
K
3
E2
6X
MILLIMETERS
MIN
NOM MAX
0.80
−−−
0.90
0.00
−−−
0.05
0.20 REF
0.30
−−−
0.40
3.00 BSC
1.90
−−−
2.10
3.30 BSC
1.10
−−−
1.30
0.95 BSC
0.20
−−−
−−−
0.40
−−−
0.60
0.00
−−−
0.15
2.15
0.95
PITCH
4
6X
BOTTOM VIEW
b
6X
(NOTE 3)
0.83
DIMENSIONS: MILLIMETERS
0.10 C A B
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
0.05 C
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12
NCV8402, NCV8402A
PACKAGE DIMENSIONS
DFN6 3x3, 0.95P
CASE 506DK
ISSUE O
A
D
B
PIN 1
REFERENCE
2X
0.10 C
2X
0.10 C
A4
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
0.10 C
NOTES:
1. DIMENSIONS AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMESNION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.20 MM FROM THE TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
A1
E
PLATED
SURFACE
DETAIL B
TOP VIEW
L3
DETAIL B
DIM
A
A1
A3
A4
b
D
D2
E
E2
e
L
L3
PLATED
SURFACE
A
A3
SECTION C−C
0.05 C
NOTE 4
C
SIDE VIEW
SEATING
PLANE
RECOMMENDED
SOLDERING FOOTPRINT*
D2
6X
L
1
6X
0.60
2.70
3
C
MILLIMETERS
MIN
MAX
0.75
0.95
0.00
0.05
0.20 REF
0.05
0.15
0.35
0.45
3.00 BSC
2.40
2.60
3.00 BSC
1.50
1.70
0.95 BSC
0.30
0.50
0.00
0.10
PACKAGE
OUTLINE
C
E2
3.30
1.80
6
4
e
6X b
0.10 C A B
BOTTOM VIEW
0.05 C
1
NOTE 3
0.95
PITCH
6X
0.50
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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