SEMICONDUCTOR MPSA92/93 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION. B C FEATURES A ·Complementary to MPSA42/43. N E K MAXIMUM RATING (Ta=25℃) MPSA92 Voltage MPSA93 Collector-Emitter MPSA92 Voltage MPSA93 J -300 VCBO V -200 H V -200 VEBO -5.0 V Collector Current IC -500 mA Emitter Current IE 500 mA Collector Power Dissipation PC 625 mW Junction Temperature Tj 150 ℃ Tstg -55～150 ℃ Emitter-Base Voltage Storage Temperature Range F F -300 VCEO UNIT 1 2 3 C Collector-Base RATING MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M SYMBOL L CHARACTERISTIC G D DIM A B C D E F G H J K L M N 1. EMITTER 2. BASE 3. COLLECTOR TO-92 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL Collector-Base MPSA92 Breakdown Voltage MPSA93 Collector-Emitter MPSA92 Breakdown Voltage MPSA93 Collector Cut-off MPSA92 Current MPSA93 TYP. MAX. -300 - - -200 - - -300 - - -200 - - VCB=-300V, IE=0 - - -0.25 VCB=-150V, IE=0 - - -0.25 VEB=-3V, IC=0 - - -0.1 IC=-1.0mA, VCE=-10V 25 - - IC=-10mA, VCE=-10V 40 - - IC=-30mA, VCE=-10V 25 - - IC=-100μA, IE=0 V(BR)CEO IC=-1.0mA, IB=0 ICBO * hFE DC Current Gain MIN. V(BR)CBO IEBO Emitter Cut-off Current TEST CONDITION UNIT V V μA μA Collector-Emitter Saturation Voltage * VCE(sat) IC=-20mA, IB=-2.0mA - - -0.5 V Base-Emitter Saturation Voltage * VBE(sat) IC=-20mA, IB=-2.0mA - - -0.9 V 50 - - MHz - - 6.0 - - 8.0 fT Transition Frequency Collector Output MPSA92 Capacitance MPSA93 Cob VCE=-20V, IC=-10mA, f=100MHz VCB=-20V, IE=0, f=1MHz pF *Pulse Test : Pulse Width≦300μS, Duty Cycle≦2% 1999. 11. 30 Revision No : 3 1/2 MPSA92/93 fT - IC h FE - I C TRANSITION FREQUENCY f T (MHz) 300 T j =125 C 100 T j =25 C T j =-55 C 50 30 10 -3 -5 -10 -30 -50 -100 100 50 30 T j =25 C VCE =20VDC 0 -1 -3 -30 -50 COLLECTOR CURRENT I C (mA) C ob - V R I C - V CE 50 5 3 C ob -3 -10 -30 -100 -300 -1k -500 -300 -100 -50 -30 1. DC LI 5 W M A IT TT AT T IO HE N RM Tc A 62 =2 L LI 5 m 5 M W C IT T AT H E IO RM N Ta AL =2 5 C 100µS mS 10 -1 -100 BONDING WIRE LIMITATION SECOND BREAK DOWN LIMITATION T j =150 C C ib 30 -0.3 -10 COLLECTOR CURRENT I C (mA) 100 1 -0.1 -5 1.0 COLLECTOR OUTPUT CAPACITANCE C ob (pF) -1 COLLECTOR CURRENT I C (mA) DC CURRENT GAIN h FE VCE =10VDC MPSA92 -10 REVERSE VOLTAGE V R (V) -5 -3 MPSA93 -5 -10 -30 -50 -100 -300 COLLECTOR-EMITTER VOLTAGE VCE (V) V BE(sat) , V CE(sat) - I C SATURATION VOLTAGE V BE(sat), V CE(sat) (V) -1.0 I C /I B =10 -0.8 V BE(sat) -0.6 -0.4 -0.2 0 -1 VCE(sat) -3 -5 -10 -30 -50 -100 COLLECTOR CURRENT I C (mA) 1999. 11. 30 Revision No : 3 2/2